JP6550470B2 - スポット走査型ウェハ検査システムのランタイムアライメントシステム及び方法 - Google Patents

スポット走査型ウェハ検査システムのランタイムアライメントシステム及び方法 Download PDF

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Publication number
JP6550470B2
JP6550470B2 JP2017554832A JP2017554832A JP6550470B2 JP 6550470 B2 JP6550470 B2 JP 6550470B2 JP 2017554832 A JP2017554832 A JP 2017554832A JP 2017554832 A JP2017554832 A JP 2017554832A JP 6550470 B2 JP6550470 B2 JP 6550470B2
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Japan
Prior art keywords
sampling
image
sampling grid
drive signal
sample
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Japanese (ja)
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JP2018516367A5 (enExample
JP2018516367A (ja
Inventor
ジェイミー サリヴァン
ジェイミー サリヴァン
ウェンジエン ツァイ
ウェンジエン ツァイ
カイ ツァオ
カイ ツァオ
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KLA Corp
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KLA Corp
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00—Optical objectives specially designed for the purposes specified below
    • G02B13/0095—Relay lenses or rod lenses
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/93—Detection standards; Calibrating baseline adjustment, drift correction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8896—Circuits specially adapted for system specific signal conditioning
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/106—Acousto-optical scan
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/12—Circuits of general importance; Signal processing
    • G01N2201/127—Calibration; base line adjustment; drift compensation

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Signal Processing (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Microscoopes, Condenser (AREA)
  • Nonlinear Science (AREA)
JP2017554832A 2015-04-21 2016-04-20 スポット走査型ウェハ検査システムのランタイムアライメントシステム及び方法 Active JP6550470B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562150295P 2015-04-21 2015-04-21
US62/150,295 2015-04-21
US15/004,331 2016-01-22
US15/004,331 US9864173B2 (en) 2015-04-21 2016-01-22 Systems and methods for run-time alignment of a spot scanning wafer inspection system
PCT/US2016/028400 WO2016172184A1 (en) 2015-04-21 2016-04-20 Systems and methods for run-time alignment of a spot scanning wafer inspection system

Publications (3)

Publication Number Publication Date
JP2018516367A JP2018516367A (ja) 2018-06-21
JP2018516367A5 JP2018516367A5 (enExample) 2019-05-30
JP6550470B2 true JP6550470B2 (ja) 2019-07-24

Family

ID=57144276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017554832A Active JP6550470B2 (ja) 2015-04-21 2016-04-20 スポット走査型ウェハ検査システムのランタイムアライメントシステム及び方法

Country Status (8)

Country Link
US (1) US9864173B2 (enExample)
EP (1) EP3286780B1 (enExample)
JP (1) JP6550470B2 (enExample)
KR (1) KR102317067B1 (enExample)
CN (1) CN107466366B (enExample)
IL (1) IL254832B (enExample)
TW (1) TWI676022B (enExample)
WO (1) WO2016172184A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10794840B2 (en) 2017-03-17 2020-10-06 Intel Corporation Apparatus for semiconductor package inspection
WO2019238553A1 (en) 2018-06-12 2019-12-19 Asml Netherlands B.V. System and method for scanning a sample using multi-beam inspection apparatus
FR3084768B1 (fr) 2018-07-31 2020-10-16 Commissariat Energie Atomique Procede d'analyse d'au moins un type de defauts parmi une pluralite de types de defauts entre au moins deux echantillons et dispositif associe
US10957571B2 (en) * 2018-08-30 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and methods for determining wafer characters
US10923317B2 (en) * 2018-09-19 2021-02-16 KLA Corp. Detecting defects in a logic region on a wafer
US11933717B2 (en) * 2019-09-27 2024-03-19 Kla Corporation Sensitive optical metrology in scanning and static modes
US11127136B2 (en) * 2019-12-05 2021-09-21 Kla Corporation System and method for defining flexible regions on a sample during inspection
US11187679B1 (en) * 2020-05-20 2021-11-30 The Boeing Company Beam steering for laser ultrasonic inspection systems
EP3933499A1 (en) * 2020-07-03 2022-01-05 Mycronic Ab Device and method for controlling focus of a laser beam
US11748872B2 (en) * 2020-08-31 2023-09-05 KLA Corp. Setting up inspection of a specimen
CN112820682B (zh) * 2021-01-08 2024-06-21 杭州长川科技股份有限公司 晶圆输送机构及晶圆测试设备
CN117012683B (zh) * 2023-10-07 2023-12-22 深圳黑晶光电技术有限公司 一种太阳能电池偏移纠正方法
CN117388274B (zh) * 2023-10-24 2024-05-24 上海感图网络科技有限公司 多自由度相机检测载台
CN119804244B (zh) * 2024-11-20 2025-11-21 苏州镁伽科技有限公司 晶圆测量方法、装置、电子设备和存储介质

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US3851951A (en) * 1974-01-16 1974-12-03 Isomet Corp High resolution laser beam recorder with self-focusing acousto-optic scanner
US4926489A (en) * 1983-03-11 1990-05-15 Kla Instruments Corporation Reticle inspection system
US4805123B1 (en) * 1986-07-14 1998-10-13 Kla Instr Corp Automatic photomask and reticle inspection method and apparatus including improved defect detector and alignment sub-systems
US5864394A (en) * 1994-06-20 1999-01-26 Kla-Tencor Corporation Surface inspection system
US5825482A (en) * 1995-09-29 1998-10-20 Kla-Tencor Corporation Surface inspection system with misregistration error correction and adaptive illumination
WO1997013370A1 (en) 1995-10-02 1997-04-10 Kla Instruments Corporation Alignment correction prior to image sampling in inspection systems
US6236454B1 (en) * 1997-12-15 2001-05-22 Applied Materials, Inc. Multiple beam scanner for an inspection system
ATE535834T1 (de) 2001-05-03 2011-12-15 Kla Tencor Tech Corp Systeme und verfahren zum scannen einer probe mit einem lichtstrahl
US6755051B2 (en) 2002-10-07 2004-06-29 Delta Galil Industries, Ltd. Knitted garments and methods of fabrication thereof
US7208328B2 (en) 2004-03-16 2007-04-24 Macronix International Co., Ltd. Method and system for analyzing defects of an integrated circuit wafer
JP4812484B2 (ja) 2006-03-24 2011-11-09 株式会社日立ハイテクノロジーズ ボルテージコントラストを伴った欠陥をレビューする方法およびその装置
JP2009071136A (ja) 2007-09-14 2009-04-02 Hitachi High-Technologies Corp データ管理装置、検査システムおよび欠陥レビュー装置
CN101840025B (zh) * 2010-05-05 2011-11-09 北京大学 一种线性光子晶体器件
US10354405B2 (en) 2010-05-17 2019-07-16 Kla-Tencor Corporation Run-time correction of defect locations during defect review
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US9255891B2 (en) * 2012-11-20 2016-02-09 Kla-Tencor Corporation Inspection beam shaping for improved detection sensitivity
US9182358B2 (en) * 2013-03-15 2015-11-10 Kla-Tencor Corporation Multi-spot defect inspection system
US8995746B2 (en) * 2013-03-15 2015-03-31 KLA—Tencor Corporation Image synchronization of scanning wafer inspection system
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CN104501738B (zh) * 2014-12-31 2017-08-11 华中科技大学 纳米尺度下大面积散射场的快速测量方法及装置

Also Published As

Publication number Publication date
EP3286780A4 (en) 2018-09-26
EP3286780B1 (en) 2024-07-31
US20160313256A1 (en) 2016-10-27
TW201704736A (zh) 2017-02-01
KR20170137181A (ko) 2017-12-12
JP2018516367A (ja) 2018-06-21
US9864173B2 (en) 2018-01-09
CN107466366B (zh) 2019-09-10
TWI676022B (zh) 2019-11-01
KR102317067B1 (ko) 2021-10-22
CN107466366A (zh) 2017-12-12
IL254832A0 (en) 2017-12-31
WO2016172184A1 (en) 2016-10-27
IL254832B (en) 2021-04-29
EP3286780A1 (en) 2018-02-28

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