KR102308510B1 - 투명 도전막용 스퍼터링 타깃 - Google Patents

투명 도전막용 스퍼터링 타깃 Download PDF

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Publication number
KR102308510B1
KR102308510B1 KR1020197030023A KR20197030023A KR102308510B1 KR 102308510 B1 KR102308510 B1 KR 102308510B1 KR 1020197030023 A KR1020197030023 A KR 1020197030023A KR 20197030023 A KR20197030023 A KR 20197030023A KR 102308510 B1 KR102308510 B1 KR 102308510B1
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KR
South Korea
Prior art keywords
transparent conductive
mass
conductive film
less
content
Prior art date
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KR1020197030023A
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English (en)
Korean (ko)
Other versions
KR20190127826A (ko
Inventor
도모야스 야노
도시히로 고히라
신이치 다테야마
신이치로 나카무라
Original Assignee
미쓰이금속광업주식회사
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Publication of KR20190127826A publication Critical patent/KR20190127826A/ko
Application granted granted Critical
Publication of KR102308510B1 publication Critical patent/KR102308510B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
KR1020197030023A 2017-05-15 2018-03-08 투명 도전막용 스퍼터링 타깃 KR102308510B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017096385 2017-05-15
JPJP-P-2017-096385 2017-05-15
PCT/JP2018/008974 WO2018211792A1 (ja) 2017-05-15 2018-03-08 透明導電膜用スパッタリングターゲット

Publications (2)

Publication Number Publication Date
KR20190127826A KR20190127826A (ko) 2019-11-13
KR102308510B1 true KR102308510B1 (ko) 2021-10-06

Family

ID=64274167

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197030023A KR102308510B1 (ko) 2017-05-15 2018-03-08 투명 도전막용 스퍼터링 타깃

Country Status (5)

Country Link
JP (1) JP6453528B1 (zh)
KR (1) KR102308510B1 (zh)
CN (1) CN110546300B (zh)
TW (1) TWI707967B (zh)
WO (1) WO2018211792A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117043122A (zh) * 2021-12-28 2023-11-10 三井金属矿业株式会社 氧化物烧结体及其制造方法以及溅射靶材
WO2023127195A1 (ja) * 2021-12-28 2023-07-06 三井金属鉱業株式会社 酸化物焼結体及びその製造方法、並びにスパッタリングターゲット材

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003105532A (ja) * 2001-06-26 2003-04-09 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
JP2004123479A (ja) 2002-10-04 2004-04-22 Sumitomo Metal Mining Co Ltd 酸化物焼結体およびスパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
JP2007138266A (ja) * 2005-11-21 2007-06-07 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜並びにその製造方法
JP2010198934A (ja) 2009-02-25 2010-09-09 Nitto Denko Corp 透明導電積層体の製造方法、透明導電積層体およびタッチパネル

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2416157A1 (fr) 1978-02-06 1979-08-31 Huret Roger Derailleur pour cycle
JPS6410507A (en) * 1987-07-02 1989-01-13 Optrex Kk Transparent conductive film and its manufacture
JP3501614B2 (ja) * 1997-02-26 2004-03-02 株式会社オプトロン Ｉｔｏ焼結体およびその製造方法ならびに前記ｉｔｏ焼結体を用いたｉｔｏ膜の成膜方法
TW570909B (en) * 2001-06-26 2004-01-11 Mitsui Mining & Smelting Co Sputtering target for forming transparent conductive film of high electric resistance and method for producing transparent conductive film of high electric resistance
JP4028269B2 (ja) * 2002-03-19 2007-12-26 日鉱金属株式会社 高抵抗透明導電性膜用スパッタリングターゲット
JP2007176706A (ja) * 2005-12-26 2007-07-12 Mitsui Mining & Smelting Co Ltd 酸化物焼結体及びその製造方法並びにスパッタリングターゲット及び透明導電膜
JP5855948B2 (ja) * 2012-01-12 2016-02-09 ジオマテック株式会社 透明導電膜，透明導電膜付き基板，ｉｐｓ液晶セル，静電容量型タッチパネル及び透明導電膜付き基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003105532A (ja) * 2001-06-26 2003-04-09 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
JP2004123479A (ja) 2002-10-04 2004-04-22 Sumitomo Metal Mining Co Ltd 酸化物焼結体およびスパッタリングターゲット
JP2005135649A (ja) * 2003-10-28 2005-05-26 Mitsui Mining & Smelting Co Ltd 酸化インジウム系透明導電膜及びその製造方法
JP2007138266A (ja) * 2005-11-21 2007-06-07 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜並びにその製造方法
JP2010198934A (ja) 2009-02-25 2010-09-09 Nitto Denko Corp 透明導電積層体の製造方法、透明導電積層体およびタッチパネル

Also Published As

Publication number Publication date
TW201900911A (zh) 2019-01-01
CN110546300B (zh) 2022-09-30
JP6453528B1 (ja) 2019-01-16
CN110546300A (zh) 2019-12-06
TWI707967B (zh) 2020-10-21
KR20190127826A (ko) 2019-11-13
WO2018211792A1 (ja) 2018-11-22
JPWO2018211792A1 (ja) 2019-06-27

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