KR102302306B1 - 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 - Google Patents

보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 Download PDF

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KR102302306B1
KR102302306B1 KR1020150015443A KR20150015443A KR102302306B1 KR 102302306 B1 KR102302306 B1 KR 102302306B1 KR 1020150015443 A KR1020150015443 A KR 1020150015443A KR 20150015443 A KR20150015443 A KR 20150015443A KR 102302306 B1 KR102302306 B1 KR 102302306B1
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thin film
film transistor
protective film
polysiloxane
transistor substrate
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KR20150091265A (ko
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야스아키 이시카와
유키하루 우라오카
도시아키 노나카
Original Assignee
고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠
에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
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Application filed by 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠, 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. filed Critical 고쿠리츠다이가쿠호징 나라 센탄카가쿠기쥬츠 다이가쿠인 다이가쿠
Publication of KR20150091265A publication Critical patent/KR20150091265A/ko
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Assigned to 에이제트 일렉트로닉 머터리얼스 게엠베하 reassignment 에이제트 일렉트로닉 머터리얼스 게엠베하 권리지분의 전부이전등록 Assignors: 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘.
Assigned to 메르크 파텐트 게엠베하 reassignment 메르크 파텐트 게엠베하 권리지분의 전부이전등록 Assignors: 에이제트 일렉트로닉 머터리얼스 게엠베하
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    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L21/02107—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H01L2924/0715—

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  • Thin Film Transistor (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020150015443A 2014-01-31 2015-01-30 보호막을 구비한 박막 트랜지스터 기판 및 이의 제조 방법 Active KR102302306B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2014-017619 2014-01-31
JP2014017619A JP6237279B2 (ja) 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法

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KR20150091265A KR20150091265A (ko) 2015-08-10
KR102302306B1 true KR102302306B1 (ko) 2021-09-17

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JP (1) JP6237279B2 (https=)
KR (1) KR102302306B1 (https=)
CN (1) CN104821337B (https=)
TW (1) TWI626511B (https=)

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KR101862710B1 (ko) * 2015-10-30 2018-05-30 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
TW201723096A (zh) * 2015-12-31 2017-07-01 奇美實業股份有限公司 感光性樹脂組成物及其應用
KR102310794B1 (ko) * 2016-05-19 2021-10-12 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
WO2017200201A1 (en) * 2016-05-19 2017-11-23 Rohm And Haas Electronic Materials Korea Ltd. Photosensitive resin composition and cured film prepared therefrom
JP6852296B2 (ja) * 2016-07-19 2021-03-31 株式会社リコー 電界効果型トランジスタの製造方法
KR102465013B1 (ko) 2016-11-28 2022-11-09 메르크 파텐트 게엠베하 보호막을 구비하는 박막 트랜지스터 기판 및 이의 제조방법
KR102028642B1 (ko) * 2016-12-19 2019-10-04 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 전자 장치
KR102898764B1 (ko) * 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
US20240160105A1 (en) * 2021-01-21 2024-05-16 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition, photosensitive resin film, photosensitive dry film, and pattern formation method

Citations (3)

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WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
WO2013108301A1 (ja) 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
WO2013151167A1 (ja) * 2012-04-06 2013-10-10 Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 ネガ型感光性シロキサン組成物

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KR101800015B1 (ko) * 2007-12-10 2017-11-21 카네카 코포레이션 알칼리 현상성을 갖는 경화성 조성물 및 그것을 사용한 절연성 박막 및 박막 트랜지스터
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
US9236496B2 (en) * 2011-03-11 2016-01-12 Sharp Kabushiki Kaisha Thin film transistor and display device
JP5977569B2 (ja) 2011-04-22 2016-08-24 株式会社神戸製鋼所 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
JP6043716B2 (ja) * 2011-05-20 2016-12-14 メルク パテント ゲーエムベーハー ポジ型感光性シロキサン組成物
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
JP5965696B2 (ja) 2012-03-29 2016-08-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP6175740B2 (ja) 2012-03-30 2017-08-09 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよびその製造方法並びに表示装置および電子機器
JP6306278B2 (ja) * 2012-04-09 2018-04-04 Jsr株式会社 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子

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WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
WO2013108301A1 (ja) 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
WO2013151167A1 (ja) * 2012-04-06 2013-10-10 Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 ネガ型感光性シロキサン組成物

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Publication number Publication date
KR20150091265A (ko) 2015-08-10
TWI626511B (zh) 2018-06-11
CN104821337B (zh) 2019-04-19
JP2015146332A (ja) 2015-08-13
JP6237279B2 (ja) 2017-11-29
TW201535055A (zh) 2015-09-16
CN104821337A (zh) 2015-08-05

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