TWI626511B - 具備保護膜之薄膜電晶體基板的製造方法 - Google Patents

具備保護膜之薄膜電晶體基板的製造方法 Download PDF

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Publication number
TWI626511B
TWI626511B TW104102947A TW104102947A TWI626511B TW I626511 B TWI626511 B TW I626511B TW 104102947 A TW104102947 A TW 104102947A TW 104102947 A TW104102947 A TW 104102947A TW I626511 B TWI626511 B TW I626511B
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TW
Taiwan
Prior art keywords
protective film
film transistor
thin
film
polysiloxane
Prior art date
Application number
TW104102947A
Other languages
English (en)
Chinese (zh)
Other versions
TW201535055A (zh
Inventor
Yasuaki Ishikawa
石河泰明
Yukiharu Uraoka
浦岡行治
Toshiaki Nonaka
野中敏章
Original Assignee
National University Corporation NARA Institute of Science and Technology
國立大學法人奈良先端科學技術大學院大學
AZ ELECTRONIC MATERIALS (LUXEMBOURG) S. a. r. l.
Ａｚ電子材料盧森堡有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by National University Corporation NARA Institute of Science and Technology, 國立大學法人奈良先端科學技術大學院大學, AZ ELECTRONIC MATERIALS (LUXEMBOURG) S. a. r. l., Ａｚ電子材料盧森堡有限公司 filed Critical National University Corporation NARA Institute of Science and Technology
Publication of TW201535055A publication Critical patent/TW201535055A/zh
Application granted granted Critical
Publication of TWI626511B publication Critical patent/TWI626511B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device

Landscapes

  • Thin Film Transistor (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
  • Formation Of Insulating Films (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
TW104102947A 2014-01-31 2015-01-29 具備保護膜之薄膜電晶體基板的製造方法 TWI626511B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014017619A JP6237279B2 (ja) 2014-01-31 2014-01-31 保護膜を具備する薄膜トランジスタ基板およびその製造方法
JP2014-17619 2014-01-31

Publications (2)

Publication Number Publication Date
TW201535055A TW201535055A (zh) 2015-09-16
TWI626511B true TWI626511B (zh) 2018-06-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW104102947A TWI626511B (zh) 2014-01-31 2015-01-29 具備保護膜之薄膜電晶體基板的製造方法

Country Status (4)

Country Link
JP (1) JP6237279B2 (https=)
KR (1) KR102302306B1 (https=)
CN (1) CN104821337B (https=)
TW (1) TWI626511B (https=)

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JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
KR101862710B1 (ko) * 2015-10-30 2018-05-30 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 소자
TW201723096A (zh) * 2015-12-31 2017-07-01 奇美實業股份有限公司 感光性樹脂組成物及其應用
KR102310794B1 (ko) * 2016-05-19 2021-10-12 롬엔드하스전자재료코리아유한회사 감광성 수지 조성물 및 이로부터 제조된 경화막
WO2017200201A1 (en) * 2016-05-19 2017-11-23 Rohm And Haas Electronic Materials Korea Ltd. Photosensitive resin composition and cured film prepared therefrom
JP6852296B2 (ja) * 2016-07-19 2021-03-31 株式会社リコー 電界効果型トランジスタの製造方法
KR102465013B1 (ko) 2016-11-28 2022-11-09 메르크 파텐트 게엠베하 보호막을 구비하는 박막 트랜지스터 기판 및 이의 제조방법
KR102028642B1 (ko) * 2016-12-19 2019-10-04 삼성에스디아이 주식회사 감광성 수지 조성물, 그로부터 형성된 경화막, 및 경화막을 갖는 전자 장치
KR102898764B1 (ko) * 2019-08-16 2025-12-10 도쿄엘렉트론가부시키가이샤 확률 중심 결함 교정을 위한 방법 및 공정
US20240160105A1 (en) * 2021-01-21 2024-05-16 Shin-Etsu Chemical Co., Ltd. Photosensitive resin composition, photosensitive resin film, photosensitive dry film, and pattern formation method

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WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
TW201244112A (en) * 2011-03-11 2012-11-01 Sharp Kk Thin-film transistor, manufacturing method therefor, and display device
WO2013108301A1 (ja) * 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
WO2013151167A1 (ja) * 2012-04-06 2013-10-10 Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 ネガ型感光性シロキサン組成物

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JP2006236839A (ja) * 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
KR101800015B1 (ko) * 2007-12-10 2017-11-21 카네카 코포레이션 알칼리 현상성을 갖는 경화성 조성물 및 그것을 사용한 절연성 박막 및 박막 트랜지스터
WO2011077978A1 (en) * 2009-12-25 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
JP5977569B2 (ja) 2011-04-22 2016-08-24 株式会社神戸製鋼所 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置
JP6043716B2 (ja) * 2011-05-20 2016-12-14 メルク パテント ゲーエムベーハー ポジ型感光性シロキサン組成物
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
JP5965696B2 (ja) 2012-03-29 2016-08-10 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP6175740B2 (ja) 2012-03-30 2017-08-09 株式会社Ｊｏｌｅｄ 薄膜トランジスタおよびその製造方法並びに表示装置および電子機器
JP6306278B2 (ja) * 2012-04-09 2018-04-04 Jsr株式会社 半導体素子、半導体基板、感放射線性樹脂組成物、保護膜および表示素子

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WO2012026400A1 (ja) * 2010-08-24 2012-03-01 Ａｚエレクトロニックマテリアルズ株式会社 ポジ型感光性シロキサン組成物
TW201244112A (en) * 2011-03-11 2012-11-01 Sharp Kk Thin-film transistor, manufacturing method therefor, and display device
WO2013108301A1 (ja) * 2012-01-20 2013-07-25 パナソニック株式会社 薄膜トランジスタ
WO2013151167A1 (ja) * 2012-04-06 2013-10-10 Ａｚエレクトロニックマテリアルズマニュファクチャリング株式会社 ネガ型感光性シロキサン組成物

Also Published As

Publication number Publication date
KR20150091265A (ko) 2015-08-10
CN104821337B (zh) 2019-04-19
JP2015146332A (ja) 2015-08-13
JP6237279B2 (ja) 2017-11-29
TW201535055A (zh) 2015-09-16
CN104821337A (zh) 2015-08-05
KR102302306B1 (ko) 2021-09-17

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