KR102295014B1 - 발광소자 - Google Patents
발광소자 Download PDFInfo
- Publication number
- KR102295014B1 KR102295014B1 KR1020160150606A KR20160150606A KR102295014B1 KR 102295014 B1 KR102295014 B1 KR 102295014B1 KR 1020160150606 A KR1020160150606 A KR 1020160150606A KR 20160150606 A KR20160150606 A KR 20160150606A KR 102295014 B1 KR102295014 B1 KR 102295014B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- bonding pad
- light emitting
- emitting device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 439
- 230000004888 barrier function Effects 0.000 claims description 73
- 239000007769 metal material Substances 0.000 claims description 55
- 239000010931 gold Substances 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 49
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 26
- 229910052737 gold Inorganic materials 0.000 claims description 26
- 239000010410 layer Substances 0.000 description 1141
- 239000000463 material Substances 0.000 description 92
- 239000010936 titanium Substances 0.000 description 84
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 80
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 75
- 239000000758 substrate Substances 0.000 description 73
- 238000004519 manufacturing process Methods 0.000 description 48
- 229910052751 metal Inorganic materials 0.000 description 45
- 239000002184 metal Substances 0.000 description 45
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 42
- 229910052719 titanium Inorganic materials 0.000 description 42
- 239000002356 single layer Substances 0.000 description 41
- 229910052782 aluminium Inorganic materials 0.000 description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 39
- 239000010949 copper Substances 0.000 description 38
- 239000011651 chromium Substances 0.000 description 35
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 30
- 229910052697 platinum Inorganic materials 0.000 description 27
- 239000010948 rhodium Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 25
- 229910052759 nickel Inorganic materials 0.000 description 25
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 25
- 239000004925 Acrylic resin Substances 0.000 description 22
- 229920000178 Acrylic resin Polymers 0.000 description 22
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 22
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 22
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 22
- 229920000139 polyethylene terephthalate Polymers 0.000 description 22
- 239000005020 polyethylene terephthalate Substances 0.000 description 22
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 22
- 238000001704 evaporation Methods 0.000 description 21
- 230000008020 evaporation Effects 0.000 description 21
- 229910045601 alloy Inorganic materials 0.000 description 20
- 239000000956 alloy Substances 0.000 description 20
- 238000001459 lithography Methods 0.000 description 20
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 18
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 17
- 229910015363 Au—Sn Inorganic materials 0.000 description 16
- 229910052804 chromium Inorganic materials 0.000 description 16
- -1 polyethylene terephthalate Polymers 0.000 description 16
- 229910000679 solder Inorganic materials 0.000 description 15
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 239000004332 silver Substances 0.000 description 14
- 150000002739 metals Chemical class 0.000 description 13
- 238000005240 physical vapour deposition Methods 0.000 description 13
- 229910052703 rhodium Inorganic materials 0.000 description 13
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- 239000004593 Epoxy Substances 0.000 description 11
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 11
- 239000004697 Polyetherimide Substances 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 11
- 239000003822 epoxy resin Substances 0.000 description 11
- 229920002313 fluoropolymer Polymers 0.000 description 11
- 229910010272 inorganic material Inorganic materials 0.000 description 11
- 239000011147 inorganic material Substances 0.000 description 11
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 11
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 11
- 239000012811 non-conductive material Substances 0.000 description 11
- 239000011368 organic material Substances 0.000 description 11
- 239000004417 polycarbonate Substances 0.000 description 11
- 229920000515 polycarbonate Polymers 0.000 description 11
- 229920000647 polyepoxide Polymers 0.000 description 11
- 229920001601 polyetherimide Polymers 0.000 description 11
- 229920001296 polysiloxane Polymers 0.000 description 11
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 10
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 10
- 229910017052 cobalt Inorganic materials 0.000 description 10
- 239000010941 cobalt Substances 0.000 description 10
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 229910052741 iridium Inorganic materials 0.000 description 10
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 10
- 229910052750 molybdenum Inorganic materials 0.000 description 10
- 239000011733 molybdenum Substances 0.000 description 10
- 229910052762 osmium Inorganic materials 0.000 description 10
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 10
- 229910052763 palladium Inorganic materials 0.000 description 10
- 229910052707 ruthenium Inorganic materials 0.000 description 10
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 229910052738 indium Inorganic materials 0.000 description 9
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000005496 eutectics Effects 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 238000007733 ion plating Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H01L33/02—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H01L33/22—
-
- H01L33/62—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210111119A KR102389242B1 (ko) | 2015-11-13 | 2021-08-23 | 발광소자 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104137443A TWI772253B (zh) | 2015-11-13 | 2015-11-13 | 發光元件 |
TW104137443 | 2015-11-13 | ||
TW105120263 | 2016-06-28 | ||
TW105120263A TWI692115B (zh) | 2016-06-28 | 2016-06-28 | 發光元件 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210111119A Division KR102389242B1 (ko) | 2015-11-13 | 2021-08-23 | 발광소자 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170056465A KR20170056465A (ko) | 2017-05-23 |
KR102295014B1 true KR102295014B1 (ko) | 2021-08-27 |
Family
ID=58768402
Family Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020160150606A Active KR102295014B1 (ko) | 2015-11-13 | 2016-11-11 | 발광소자 |
KR1020210111119A Active KR102389242B1 (ko) | 2015-11-13 | 2021-08-23 | 발광소자 |
KR1020220047483A Active KR102541486B1 (ko) | 2015-11-13 | 2022-04-18 | 발광소자 |
KR1020230071520A Active KR102676772B1 (ko) | 2015-11-13 | 2023-06-02 | 발광소자 |
KR1020240077771A Pending KR20240100327A (ko) | 2015-11-13 | 2024-06-14 | 발광소자 |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210111119A Active KR102389242B1 (ko) | 2015-11-13 | 2021-08-23 | 발광소자 |
KR1020220047483A Active KR102541486B1 (ko) | 2015-11-13 | 2022-04-18 | 발광소자 |
KR1020230071520A Active KR102676772B1 (ko) | 2015-11-13 | 2023-06-02 | 발광소자 |
KR1020240077771A Pending KR20240100327A (ko) | 2015-11-13 | 2024-06-14 | 발광소자 |
Country Status (2)
Country | Link |
---|---|
JP (3) | JP6890952B2 (enrdf_load_stackoverflow) |
KR (5) | KR102295014B1 (enrdf_load_stackoverflow) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6638748B2 (ja) * | 2017-09-25 | 2020-01-29 | 日亜化学工業株式会社 | 発光素子及び発光装置 |
US11024770B2 (en) * | 2017-09-25 | 2021-06-01 | Nichia Corporation | Light emitting element and light emitting device |
EP3528296B1 (en) | 2018-02-16 | 2020-06-03 | Nichia Corporation | Light emitting element and light emitting device |
JP6635206B1 (ja) * | 2018-02-16 | 2020-01-22 | 日亜化学工業株式会社 | 発光素子および発光装置 |
JP6773104B2 (ja) * | 2018-02-28 | 2020-10-21 | 日亜化学工業株式会社 | 発光素子及び発光装置 |
JP7054430B2 (ja) * | 2018-04-26 | 2022-04-14 | 日亜化学工業株式会社 | 発光素子 |
JP6844606B2 (ja) * | 2018-12-28 | 2021-03-17 | 日亜化学工業株式会社 | 発光素子及びその製造方法ならびに発光装置 |
JP7312056B2 (ja) * | 2019-01-07 | 2023-07-20 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
CN118281133A (zh) | 2020-03-06 | 2024-07-02 | 隆达电子股份有限公司 | 发光元件 |
JP2023130977A (ja) | 2022-03-08 | 2023-09-21 | スタンレー電気株式会社 | 半導体発光素子、半導体発光装置及び半導体発光装置モジュール |
JP7513924B2 (ja) * | 2022-04-28 | 2024-07-10 | 日亜化学工業株式会社 | 半導体発光素子 |
CN115000270B (zh) * | 2022-06-16 | 2023-12-01 | 惠州华星光电显示有限公司 | 光源模组及显示装置 |
JP7684488B1 (ja) * | 2024-07-17 | 2025-05-27 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014093480A (ja) * | 2012-11-06 | 2014-05-19 | Nichia Chem Ind Ltd | 半導体発光素子 |
JP2014207267A (ja) * | 2013-04-11 | 2014-10-30 | 日亜化学工業株式会社 | 発光素子及びそれを用いた発光装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007173465A (ja) * | 2005-12-21 | 2007-07-05 | Rohm Co Ltd | 窒化物半導体発光素子の製造方法 |
JP2009238931A (ja) * | 2008-03-26 | 2009-10-15 | Panasonic Electric Works Co Ltd | 半導体発光素子およびそれを用いる照明装置ならびに半導体発光素子の製造方法 |
JP2009259904A (ja) * | 2008-04-14 | 2009-11-05 | Sharp Corp | 窒化物系化合物半導体発光素子 |
JP2011119491A (ja) * | 2009-12-04 | 2011-06-16 | Showa Denko Kk | 半導体発光素子、電子機器および発光装置 |
JP5869961B2 (ja) * | 2012-05-28 | 2016-02-24 | 株式会社東芝 | 半導体発光装置 |
JP6041341B2 (ja) * | 2012-07-19 | 2016-12-07 | ローム株式会社 | 発光素子、発光素子ユニットおよび発光素子パッケージ |
KR101967837B1 (ko) * | 2013-03-11 | 2019-04-10 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102086365B1 (ko) * | 2013-04-19 | 2020-03-09 | 삼성전자주식회사 | 반도체 발광소자 |
JP6221926B2 (ja) * | 2013-05-17 | 2017-11-01 | 日亜化学工業株式会社 | 半導体発光素子およびその製造方法 |
KR102100936B1 (ko) * | 2013-07-10 | 2020-04-16 | 서울바이오시스 주식회사 | 정전방전 보호 기능을 갖는 발광 다이오드 칩 |
KR102223038B1 (ko) * | 2013-12-17 | 2021-03-08 | 삼성전자주식회사 | 반도체 발광소자 및 이를 구비한 반도체 발광장치 |
US9196812B2 (en) * | 2013-12-17 | 2015-11-24 | Samsung Electronics Co., Ltd. | Semiconductor light emitting device and semiconductor light emitting apparatus having the same |
KR20150014353A (ko) * | 2014-03-31 | 2015-02-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
CN204315621U (zh) * | 2014-12-30 | 2015-05-06 | 广州市鸿利光电股份有限公司 | 一种led倒装晶片 |
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2016
- 2016-11-11 JP JP2016220737A patent/JP6890952B2/ja active Active
- 2016-11-11 KR KR1020160150606A patent/KR102295014B1/ko active Active
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2021
- 2021-05-26 JP JP2021088068A patent/JP7482081B2/ja active Active
- 2021-08-23 KR KR1020210111119A patent/KR102389242B1/ko active Active
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2022
- 2022-04-18 KR KR1020220047483A patent/KR102541486B1/ko active Active
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2023
- 2023-05-09 JP JP2023077053A patent/JP7581416B2/ja active Active
- 2023-06-02 KR KR1020230071520A patent/KR102676772B1/ko active Active
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KR102676772B1 (ko) | 2024-06-18 |
JP2021121039A (ja) | 2021-08-19 |
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