KR102251256B1 - 기판 액처리 장치 및 기판 액처리 방법 - Google Patents

기판 액처리 장치 및 기판 액처리 방법 Download PDF

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Publication number
KR102251256B1
KR102251256B1 KR1020140074886A KR20140074886A KR102251256B1 KR 102251256 B1 KR102251256 B1 KR 102251256B1 KR 1020140074886 A KR1020140074886 A KR 1020140074886A KR 20140074886 A KR20140074886 A KR 20140074886A KR 102251256 B1 KR102251256 B1 KR 102251256B1
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South Korea
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substrate
liquid
treatment
processing
discharging
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Korean (ko)
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KR20140148330A (ko
Inventor
시게히사 이노우에
다이스케 나가야마
가츠후미 마츠키
다쿠로 마스즈미
유키 요시다
메이토쿠 아이바라
히로미 기요세
다카시 우노
히로타카 마루야마
가즈야 고야마
다카시 나가자와
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도쿄엘렉트론가부시키가이샤
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Publication of KR20140148330A publication Critical patent/KR20140148330A/ko
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0411—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H10P72/0414—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

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  • Cleaning Or Drying Semiconductors (AREA)
KR1020140074886A 2013-06-21 2014-06-19 기판 액처리 장치 및 기판 액처리 방법 Active KR102251256B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013130883 2013-06-21
JPJP-P-2013-130883 2013-06-21
JPJP-P-2014-086639 2014-04-18
JP2014086639A JP6225067B2 (ja) 2013-06-21 2014-04-18 基板液処理装置及び基板液処理方法

Publications (2)

Publication Number Publication Date
KR20140148330A KR20140148330A (ko) 2014-12-31
KR102251256B1 true KR102251256B1 (ko) 2021-05-11

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KR1020140074886A Active KR102251256B1 (ko) 2013-06-21 2014-06-19 기판 액처리 장치 및 기판 액처리 방법

Country Status (4)

Country Link
US (1) US20140373877A1 (https=)
JP (1) JP6225067B2 (https=)
KR (1) KR102251256B1 (https=)
TW (1) TWI584364B (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170207079A1 (en) * 2016-01-15 2017-07-20 United Microelectronics Corp. Substrate cleaning method
US10388537B2 (en) 2016-04-15 2019-08-20 Samsung Electronics Co., Ltd. Cleaning apparatus, chemical mechanical polishing system including the same, cleaning method after chemical mechanical polishing, and method of manufacturing semiconductor device including the same
KR20170128801A (ko) 2016-05-16 2017-11-24 삼성전자주식회사 기판 세정 방법 및 이를 수행하기 위한 장치
JP6980457B2 (ja) * 2017-08-23 2021-12-15 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
KR102862397B1 (ko) 2020-09-18 2025-09-22 삼성전자주식회사 기판 세정 방법 및 그를 포함하는 기판 제조 방법
TW202331909A (zh) * 2021-12-21 2023-08-01 日商東京威力科創股份有限公司 基板處理裝置及基板處理方法

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KR100202761B1 (ko) 1995-06-09 1999-06-15 니시무로 타이죠 반도체 기판의 세정 방법 및 세정 장치
US20030188766A1 (en) 2002-04-05 2003-10-09 Souvik Banerjee Liquid-assisted cryogenic cleaning
US20100124823A1 (en) * 2008-11-20 2010-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Novel method for removing dummy poly in a gate last process

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US6348289B1 (en) * 1999-08-03 2002-02-19 Advanced Micro Devices, Inc. System and method for controlling polysilicon feature critical dimension during processing
US7364625B2 (en) * 2000-05-30 2008-04-29 Fsi International, Inc. Rinsing processes and equipment
JP4046486B2 (ja) * 2001-06-13 2008-02-13 Ｎｅｃエレクトロニクス株式会社 洗浄水及びウエハの洗浄方法
JP4053800B2 (ja) * 2002-03-25 2008-02-27 東京エレクトロン株式会社 基板処理装置
JP4702920B2 (ja) * 2002-11-12 2011-06-15 大日本スクリーン製造株式会社 基板処理方法および基板処理装置
JP4312542B2 (ja) * 2003-07-29 2009-08-12 東京エレクトロン株式会社 ２流体ノズル装置、洗浄処理装置、およびミスト発生方法
JP4661784B2 (ja) * 2004-09-30 2011-03-30 信越半導体株式会社 Ｓｏｉウエーハの洗浄方法
US7767026B2 (en) * 2005-03-29 2010-08-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
JP2006286665A (ja) * 2005-03-31 2006-10-19 Toshiba Corp 電子デバイス洗浄方法及び電子デバイス洗浄装置
KR100682538B1 (ko) * 2006-02-07 2007-02-15 삼성전자주식회사 반도체 웨이퍼 세정설비 및 세정방법
TW200739710A (en) * 2006-04-11 2007-10-16 Dainippon Screen Mfg Substrate processing method and substrate processing apparatus
JP2007311559A (ja) * 2006-05-18 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP2008226900A (ja) * 2007-03-08 2008-09-25 Hitachi Kokusai Electric Inc 基板洗浄方法、半導体装置の製造方法及び基板洗浄装置。
US20100294306A1 (en) * 2007-12-04 2010-11-25 Mitsubishi Chemical Corporation Method and solution for cleaning semiconductor device substrate
US20100258142A1 (en) * 2009-04-14 2010-10-14 Mark Naoshi Kawaguchi Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
KR101044409B1 (ko) * 2009-05-27 2011-06-27 세메스 주식회사 기판 세정 방법
JP2011192779A (ja) * 2010-03-15 2011-09-29 Kurita Water Ind Ltd 電子材料の洗浄方法および洗浄システム
WO2012078580A1 (en) * 2010-12-10 2012-06-14 Fsi International, Inc. Process for selectively removing nitride from substrates
KR101907510B1 (ko) * 2011-11-07 2018-10-16 삼성전자주식회사 기판 세척 방법 및 기판 세척 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100202761B1 (ko) 1995-06-09 1999-06-15 니시무로 타이죠 반도체 기판의 세정 방법 및 세정 장치
US20030188766A1 (en) 2002-04-05 2003-10-09 Souvik Banerjee Liquid-assisted cryogenic cleaning
US20100124823A1 (en) * 2008-11-20 2010-05-20 Taiwan Semiconductor Manufacturing Company, Ltd. Novel method for removing dummy poly in a gate last process

Also Published As

Publication number Publication date
JP6225067B2 (ja) 2017-11-01
KR20140148330A (ko) 2014-12-31
JP2015026814A (ja) 2015-02-05
TW201515081A (zh) 2015-04-16
US20140373877A1 (en) 2014-12-25
TWI584364B (zh) 2017-05-21

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