KR102215496B1 - 비도전성 기판들 상의 플로팅 금속 구조물들을 이미징하기 위한 전하 제어를 위한 방법 및 시스템 - Google Patents
비도전성 기판들 상의 플로팅 금속 구조물들을 이미징하기 위한 전하 제어를 위한 방법 및 시스템 Download PDFInfo
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- KR102215496B1 KR102215496B1 KR1020187031823A KR20187031823A KR102215496B1 KR 102215496 B1 KR102215496 B1 KR 102215496B1 KR 1020187031823 A KR1020187031823 A KR 1020187031823A KR 20187031823 A KR20187031823 A KR 20187031823A KR 102215496 B1 KR102215496 B1 KR 102215496B1
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- metal structures
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- 238000003384 imaging method Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 96
- 239000002184 metal Substances 0.000 title claims description 38
- 229910052751 metal Inorganic materials 0.000 title claims description 38
- 238000007667 floating Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 title abstract description 14
- 238000010894 electron beam technology Methods 0.000 claims abstract description 79
- 230000003287 optical effect Effects 0.000 claims abstract description 43
- 238000000605 extraction Methods 0.000 claims description 39
- 239000011810 insulating material Substances 0.000 claims description 24
- 238000004626 scanning electron microscopy Methods 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 5
- 230000005591 charge neutralization Effects 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 claims description 2
- 238000007689 inspection Methods 0.000 description 12
- 238000012552 review Methods 0.000 description 12
- 238000012545 processing Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 201000009310 astigmatism Diseases 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000012356 Product development Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical group 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/10—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0041—Neutralising arrangements
- H01J2237/0044—Neutralising arrangements of objects being observed or treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/004—Charge control of objects or beams
- H01J2237/0048—Charging arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/103—Lenses characterised by lens type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20278—Motorised movement
- H01J2237/20285—Motorised movement computer-controlled
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24592—Inspection and quality control of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2802—Transmission microscopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2809—Scanning microscopes characterised by the imaging problems involved
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201662318078P | 2016-04-04 | 2016-04-04 | |
| US62/318,078 | 2016-04-04 | ||
| US15/387,388 | 2016-12-21 | ||
| US15/387,388 US10460903B2 (en) | 2016-04-04 | 2016-12-21 | Method and system for charge control for imaging floating metal structures on non-conducting substrates |
| PCT/US2017/025595 WO2017176595A1 (en) | 2016-04-04 | 2017-03-31 | Method and system for charge control for imaging floating metal structures on non-conducting substrates |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20180123171A KR20180123171A (ko) | 2018-11-14 |
| KR102215496B1 true KR102215496B1 (ko) | 2021-02-10 |
Family
ID=59959718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020187031823A Active KR102215496B1 (ko) | 2016-04-04 | 2017-03-31 | 비도전성 기판들 상의 플로팅 금속 구조물들을 이미징하기 위한 전하 제어를 위한 방법 및 시스템 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10460903B2 (enExample) |
| EP (1) | EP3443577A4 (enExample) |
| JP (1) | JP7041666B2 (enExample) |
| KR (1) | KR102215496B1 (enExample) |
| CN (1) | CN109075001B (enExample) |
| IL (1) | IL261616B (enExample) |
| SG (1) | SG11201807248UA (enExample) |
| TW (1) | TWI716575B (enExample) |
| WO (1) | WO2017176595A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10338013B1 (en) * | 2018-01-25 | 2019-07-02 | Kla-Tencor Corporation | Position feedback for multi-beam particle detector |
| US12165838B2 (en) * | 2018-12-14 | 2024-12-10 | Kla Corporation | Joint electron-optical columns for flood-charging and image-forming in voltage contrast wafer inspections |
| DE102019218315B3 (de) | 2019-11-27 | 2020-10-01 | Carl Zeiss Microscopy Gmbh | Verfahren zur Spannungskontrastbildgebung mit einem Korpuskularvielstrahlmikroskop, Korpuskularvielstrahlmikroskop für Spannungskontrastbildgebung und Halbleiterstrukturen zur Spannungskontrastbildgebung mit einem Korpuskularvielstrahlmikroskop |
| US11239048B2 (en) * | 2020-03-09 | 2022-02-01 | Kla Corporation | Arrayed column detector |
| KR20250154503A (ko) * | 2023-03-03 | 2025-10-28 | 칼 짜이스 에스엠테 게엠베하 | 주사 전자 현미경에서 집적 회로 패턴을 포함하는 물체의 표면 상의 전하를 균형화하기 위한 방법 및 시스템 |
| WO2025098639A1 (en) * | 2023-11-07 | 2025-05-15 | Carl Zeiss Multisem Gmbh | Multi-beam charged particle microscope for inspection with reduced charging effects |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001508592A (ja) | 1997-01-16 | 2001-06-26 | クラ−テンコール コーポレイション | 走査電子顕微鏡法および臨界寸法測定機器のための電子ビーム線量制御 |
| JP2002524827A (ja) | 1998-09-03 | 2002-08-06 | ケーエルエー−テンカー コーポレイション | 走査型電子ビーム顕微鏡 |
| KR100653499B1 (ko) | 1999-01-08 | 2006-12-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 저전압 입자빔을 이용한 반도체 조사용 전압 콘트라스트방법 및 장치 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000516708A (ja) * | 1996-08-08 | 2000-12-12 | ウィリアム・マーシュ・ライス・ユニバーシティ | ナノチューブ組立体から作製された巨視的操作可能なナノ規模の装置 |
| US6232787B1 (en) * | 1999-01-08 | 2001-05-15 | Schlumberger Technologies, Inc. | Microstructure defect detection |
| US6586733B1 (en) * | 1999-05-25 | 2003-07-01 | Kla-Tencor | Apparatus and methods for secondary electron emission microscope with dual beam |
| JP4066078B2 (ja) | 1999-05-27 | 2008-03-26 | 株式会社ニコン | 写像型電子顕微鏡 |
| US6445199B1 (en) * | 1999-12-14 | 2002-09-03 | Kla-Tencor Corporation | Methods and apparatus for generating spatially resolved voltage contrast maps of semiconductor test structures |
| US6627884B2 (en) | 2001-03-19 | 2003-09-30 | Kla-Tencor Technologies Corporation | Simultaneous flooding and inspection for charge control in an electron beam inspection machine |
| ATE484840T1 (de) * | 2001-10-10 | 2010-10-15 | Applied Materials Israel Ltd | Verfahren und vorrichtung zur ausrichtung einer säule für strahlen geladener teilchen |
| GB2411763B (en) | 2004-03-05 | 2009-02-18 | Thermo Electron Corp | Flood gun for charge neutralization |
| US7230240B2 (en) | 2004-08-31 | 2007-06-12 | Credence Systems Corporation | Enhanced scanning control of charged particle beam systems |
| US7183546B2 (en) * | 2004-09-16 | 2007-02-27 | Applied Materials, Israel, Ltd. | System and method for voltage contrast analysis of a wafer |
| US7205542B1 (en) * | 2005-11-14 | 2007-04-17 | Kla-Tencor Technologies Corporation | Scanning electron microscope with curved axes |
| US7947951B2 (en) | 2006-07-21 | 2011-05-24 | National University Of Singapore | Multi-beam ion/electron spectra-microscope |
| US7488938B1 (en) * | 2006-08-23 | 2009-02-10 | Kla-Tencor Technologies Corporation | Charge-control method and apparatus for electron beam imaging |
| JP2010027743A (ja) * | 2008-07-16 | 2010-02-04 | Ebara Corp | インプリント用ガラス基板、レジストパターン形成方法、インプリント用ガラス基板の検査方法及び検査装置 |
| JP5292412B2 (ja) * | 2009-01-15 | 2013-09-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子線応用装置 |
| JP5695917B2 (ja) | 2011-01-26 | 2015-04-08 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP6121651B2 (ja) | 2012-04-04 | 2017-04-26 | 株式会社日立ハイテクノロジーズ | 電子顕微鏡、電子顕微鏡の観察条件の設定方法、および電子顕微鏡による観察方法 |
| JP6014688B2 (ja) * | 2013-01-31 | 2016-10-25 | 株式会社日立ハイテクノロジーズ | 複合荷電粒子線装置 |
| US9257260B2 (en) * | 2013-04-27 | 2016-02-09 | Kla-Tencor Corporation | Method and system for adaptively scanning a sample during electron beam inspection |
| JP6316578B2 (ja) * | 2013-12-02 | 2018-04-25 | 株式会社日立ハイテクノロジーズ | 走査電子顕微鏡システム及びそれを用いたパターン計測方法並びに走査電子顕微鏡 |
| US9767986B2 (en) * | 2014-08-29 | 2017-09-19 | Kla-Tencor Corporation | Scanning electron microscope and methods of inspecting and reviewing samples |
| US9165742B1 (en) * | 2014-10-10 | 2015-10-20 | Kla-Tencor Corporation | Inspection site preparation |
| CN107533943B (zh) | 2015-05-08 | 2019-12-10 | 科磊股份有限公司 | 用于电子束系统中像差校正的方法及系统 |
-
2016
- 2016-12-21 US US15/387,388 patent/US10460903B2/en active Active
-
2017
- 2017-03-31 JP JP2019502537A patent/JP7041666B2/ja active Active
- 2017-03-31 WO PCT/US2017/025595 patent/WO2017176595A1/en not_active Ceased
- 2017-03-31 CN CN201780021327.9A patent/CN109075001B/zh active Active
- 2017-03-31 KR KR1020187031823A patent/KR102215496B1/ko active Active
- 2017-03-31 SG SG11201807248UA patent/SG11201807248UA/en unknown
- 2017-03-31 TW TW106111261A patent/TWI716575B/zh active
- 2017-03-31 EP EP17779577.0A patent/EP3443577A4/en active Pending
-
2018
- 2018-09-05 IL IL261616A patent/IL261616B/en unknown
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001508592A (ja) | 1997-01-16 | 2001-06-26 | クラ−テンコール コーポレイション | 走査電子顕微鏡法および臨界寸法測定機器のための電子ビーム線量制御 |
| JP2007207737A (ja) | 1997-01-16 | 2007-08-16 | Kla-Tencor Corp | 走査電子顕微鏡法および臨界寸法測定機器のための電子ビーム線量制御 |
| JP2002524827A (ja) | 1998-09-03 | 2002-08-06 | ケーエルエー−テンカー コーポレイション | 走査型電子ビーム顕微鏡 |
| KR100653499B1 (ko) | 1999-01-08 | 2006-12-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 저전압 입자빔을 이용한 반도체 조사용 전압 콘트라스트방법 및 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| US10460903B2 (en) | 2019-10-29 |
| EP3443577A4 (en) | 2019-12-18 |
| CN109075001A (zh) | 2018-12-21 |
| JP7041666B2 (ja) | 2022-03-24 |
| IL261616B (en) | 2022-04-01 |
| JP2019511107A (ja) | 2019-04-18 |
| TW201801123A (zh) | 2018-01-01 |
| WO2017176595A1 (en) | 2017-10-12 |
| CN109075001B (zh) | 2021-12-21 |
| US20170287675A1 (en) | 2017-10-05 |
| IL261616A (en) | 2019-03-31 |
| KR20180123171A (ko) | 2018-11-14 |
| TWI716575B (zh) | 2021-01-21 |
| EP3443577A1 (en) | 2019-02-20 |
| SG11201807248UA (en) | 2018-10-30 |
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