SG11201807248UA - Method and system for charge control for imaging floating metal structures on non-conducting substrates - Google Patents

Method and system for charge control for imaging floating metal structures on non-conducting substrates

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Publication number
SG11201807248UA
SG11201807248UA SG11201807248UA SG11201807248UA SG11201807248UA SG 11201807248U A SG11201807248U A SG 11201807248UA SG 11201807248U A SG11201807248U A SG 11201807248UA SG 11201807248U A SG11201807248U A SG 11201807248UA SG 11201807248U A SG11201807248U A SG 11201807248UA
Authority
SG
Singapore
Prior art keywords
international
sample
scans
electron
imaging
Prior art date
Application number
SG11201807248UA
Inventor
Arjun Hegde
Luca Grella
Christopher Sears
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG11201807248UA publication Critical patent/SG11201807248UA/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0048—Charging arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization 1111111101111011101010111110101111101110101111110111101111111101111101111011111 International Bureau ... .... ..Yjd ..... ...,/ (10) International Publication Number (43) International Publication Date WO 2017/176595 Al 12 October 2017(12.10.2017) WIPO I PCT (51) International Patent Classification: (74) Agents: MCANDREWS, Kevin et al.; KLA-TENCOR HOLI 37/147 (2006.01) HOLI 37/28 (2006.01) CORPORATION, Legal Department, One Technology Drive, Milpitas, California 95035 (US). (21) International Application Number: PCT/US2017/025595 (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, (22) International Filing Date: AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, 31 March 2017 (31.03.2017) BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, (25) Filing Language: English DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, (26) Publication Language: English KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, (30) Priority Data: MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, 62/318,078 4 April 2016 (04.04.2016) US NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, 15/387,388 21 December 2016 (21.12.2016) US RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, (71) Applicant: KLA-TENCOR CORPORATION [US/US]; ZA, ZM, ZW. Legal Department One Technology Drive, Milpitas, Cali- fornia 95035 (US). (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, (72) Inventors: HEGDE, Arjun; 440 Dixon Landing Road GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, #G303, Milpitas, California 95035 (US). GRELLA, Luca; TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, 1170 Olympic Court, Gilroy, California 95020 (US). TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, SEARS, Christopher; 1958 Wave Place, San Jose, Cali- DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, = fornia 95133 (US). LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, = SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, — GW, KM, ML, MR, NE, SN, TD, TG). — [Continued on next page] = (54) Title: METHOD NON-CONDUCTING SUBSTRATES _— = t00 _ = - = = iii--.1 = = = 02 101 AND SYSTEM FOR CHARGE CONTROL FOR IMAGING FLOATING METAL STRUCTURES ON (57) : A scanning electron microscopy system is disclosed. The system includes a sample stage configured to secure a sample having con- ducting structures disposed on an insulating substrate. The system includes an electron-optical column including an electron source configured to gen- crate a primary electron beam and a set of electron-optical elements con- figured to direct at least a portion of the primary electron beam onto a por- Boa tion of the sample. The system includes a detector assembly configured to detect electrons emanating from the surface of the sample. The system in- dudes a controller communicatively coupled to the detector assembly. The controller is configured to direct the electron-optical column and stage to 106 perform, with the primary electron beam, an alternating series of image flood the the the =104 — = 105 108 nc , scans and scans of portion of sample, wherein each of flood scans are performed sequential to one or more of the imaging scans. — 110.,, ---- OA , ' z: — ..&Z.ZZCZA 112 11 .4 kin tz. kin ,tD IN 1-1 IN FIG.1 1-1 0 ei O WO 2017/176595 Al MIDEDIM011111 111111110101301011111111111111111111111111111111111111111 Published: — with international search report (Art. 21(3))
SG11201807248UA 2016-04-04 2017-03-31 Method and system for charge control for imaging floating metal structures on non-conducting substrates SG11201807248UA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662318078P 2016-04-04 2016-04-04
US15/387,388 US10460903B2 (en) 2016-04-04 2016-12-21 Method and system for charge control for imaging floating metal structures on non-conducting substrates
PCT/US2017/025595 WO2017176595A1 (en) 2016-04-04 2017-03-31 Method and system for charge control for imaging floating metal structures on non-conducting substrates

Publications (1)

Publication Number Publication Date
SG11201807248UA true SG11201807248UA (en) 2018-10-30

Family

ID=59959718

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807248UA SG11201807248UA (en) 2016-04-04 2017-03-31 Method and system for charge control for imaging floating metal structures on non-conducting substrates

Country Status (9)

Country Link
US (1) US10460903B2 (en)
EP (1) EP3443577A4 (en)
JP (1) JP7041666B2 (en)
KR (1) KR102215496B1 (en)
CN (1) CN109075001B (en)
IL (1) IL261616B (en)
SG (1) SG11201807248UA (en)
TW (1) TWI716575B (en)
WO (1) WO2017176595A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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US10338013B1 (en) * 2018-01-25 2019-07-02 Kla-Tencor Corporation Position feedback for multi-beam particle detector
US20200194223A1 (en) * 2018-12-14 2020-06-18 Kla Corporation Joint Electron-Optical Columns for Flood-Charging and Image-Forming in Voltage Contrast Wafer Inspections
DE102019218315B3 (en) 2019-11-27 2020-10-01 Carl Zeiss Microscopy Gmbh Method for voltage contrast imaging with a corpuscular multi-beam microscope, corpuscular multi-beam microscope for voltage contrast imaging and semiconductor structures for voltage contrast imaging with a corpuscular multi-beam microscope
US11239048B2 (en) * 2020-03-09 2022-02-01 Kla Corporation Arrayed column detector

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JP2000516708A (en) * 1996-08-08 2000-12-12 ウィリアム・マーシュ・ライス・ユニバーシティ Macroscopically operable nanoscale devices fabricated from nanotube assemblies
US6066849A (en) * 1997-01-16 2000-05-23 Kla Tencor Scanning electron beam microscope
US5869833A (en) * 1997-01-16 1999-02-09 Kla-Tencor Corporation Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
US6586733B1 (en) * 1999-05-25 2003-07-01 Kla-Tencor Apparatus and methods for secondary electron emission microscope with dual beam
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US6445199B1 (en) * 1999-12-14 2002-09-03 Kla-Tencor Corporation Methods and apparatus for generating spatially resolved voltage contrast maps of semiconductor test structures
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EP1306878B1 (en) * 2001-10-10 2010-10-13 Applied Materials Israel Ltd. Method and device for aligning a charged particle beam column
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Also Published As

Publication number Publication date
US10460903B2 (en) 2019-10-29
EP3443577A1 (en) 2019-02-20
KR102215496B1 (en) 2021-02-10
IL261616B (en) 2022-04-01
TWI716575B (en) 2021-01-21
CN109075001A (en) 2018-12-21
TW201801123A (en) 2018-01-01
EP3443577A4 (en) 2019-12-18
US20170287675A1 (en) 2017-10-05
JP7041666B2 (en) 2022-03-24
CN109075001B (en) 2021-12-21
KR20180123171A (en) 2018-11-14
IL261616A (en) 2019-03-31
JP2019511107A (en) 2019-04-18
WO2017176595A1 (en) 2017-10-12

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