TWI716575B - 掃描電子顯微鏡設備及用於成像浮動金屬結構之充電控制的方法 - Google Patents

掃描電子顯微鏡設備及用於成像浮動金屬結構之充電控制的方法 Download PDF

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TWI716575B
TWI716575B TW106111261A TW106111261A TWI716575B TW I716575 B TWI716575 B TW I716575B TW 106111261 A TW106111261 A TW 106111261A TW 106111261 A TW106111261 A TW 106111261A TW I716575 B TWI716575 B TW I716575B
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electron
sample
electron beam
additional
exposures
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TW106111261A
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Chinese (zh)
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TW201801123A (zh
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亞瓊 希迪
魯卡 葛瑞拉
克里斯多福 希爾斯
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美商克萊譚克公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0048—Charging arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/103—Lenses characterised by lens type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2802—Transmission microscopes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2809—Scanning microscopes characterised by the imaging problems involved

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
TW106111261A 2016-04-04 2017-03-31 掃描電子顯微鏡設備及用於成像浮動金屬結構之充電控制的方法 TWI716575B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201662318078P 2016-04-04 2016-04-04
US62/318,078 2016-04-04
US15/387,388 US10460903B2 (en) 2016-04-04 2016-12-21 Method and system for charge control for imaging floating metal structures on non-conducting substrates
US15/387,388 2016-12-21

Publications (2)

Publication Number Publication Date
TW201801123A TW201801123A (zh) 2018-01-01
TWI716575B true TWI716575B (zh) 2021-01-21

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TW106111261A TWI716575B (zh) 2016-04-04 2017-03-31 掃描電子顯微鏡設備及用於成像浮動金屬結構之充電控制的方法

Country Status (9)

Country Link
US (1) US10460903B2 (enExample)
EP (1) EP3443577A4 (enExample)
JP (1) JP7041666B2 (enExample)
KR (1) KR102215496B1 (enExample)
CN (1) CN109075001B (enExample)
IL (1) IL261616B (enExample)
SG (1) SG11201807248UA (enExample)
TW (1) TWI716575B (enExample)
WO (1) WO2017176595A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10338013B1 (en) * 2018-01-25 2019-07-02 Kla-Tencor Corporation Position feedback for multi-beam particle detector
US12165838B2 (en) * 2018-12-14 2024-12-10 Kla Corporation Joint electron-optical columns for flood-charging and image-forming in voltage contrast wafer inspections
DE102019218315B3 (de) 2019-11-27 2020-10-01 Carl Zeiss Microscopy Gmbh Verfahren zur Spannungskontrastbildgebung mit einem Korpuskularvielstrahlmikroskop, Korpuskularvielstrahlmikroskop für Spannungskontrastbildgebung und Halbleiterstrukturen zur Spannungskontrastbildgebung mit einem Korpuskularvielstrahlmikroskop
US11239048B2 (en) * 2020-03-09 2022-02-01 Kla Corporation Arrayed column detector
KR20250154503A (ko) * 2023-03-03 2025-10-28 칼 짜이스 에스엠테 게엠베하 주사 전자 현미경에서 집적 회로 패턴을 포함하는 물체의 표면 상의 전하를 균형화하기 위한 방법 및 시스템
WO2025098639A1 (en) * 2023-11-07 2025-05-15 Carl Zeiss Multisem Gmbh Multi-beam charged particle microscope for inspection with reduced charging effects

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6066849A (en) * 1997-01-16 2000-05-23 Kla Tencor Scanning electron beam microscope
US20040000642A1 (en) * 1999-05-25 2004-01-01 Lee Veneklasen Apparatus and methods for secondary electron emission microscope with dual beam
US20050205800A1 (en) * 2004-03-05 2005-09-22 Thermo Electron Corporation Flood gun for charge neutralization
US20070235659A1 (en) * 2001-10-10 2007-10-11 Applied Materials Israel Limited Method and device for aligning a charged particle beam column
WO2008010777A1 (en) * 2006-07-21 2008-01-24 National University Of Singapore A multi-beam ion/electron spectra-microscope
US20100012838A1 (en) * 2008-07-16 2010-01-21 Ebara Corporation Inspection method and apparatus of a glass substrate for imprint
TW201532101A (zh) * 2013-12-02 2015-08-16 Hitachi High Tech Corp 掃描電子顯微鏡系統及利用其之圖案測量方法以及掃描電子顯微鏡
US20150364296A1 (en) * 2013-01-31 2015-12-17 Hitachi High-Technologies Corporation Composite Charged Particle Beam Detector, Charged Particle Beam Device, and Charged Particle Beam Detector
TW201621963A (zh) * 2014-08-29 2016-06-16 克萊譚克公司 掃描式電子顯微鏡及檢查和審查樣本之方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU4055297A (en) * 1996-08-08 1998-02-25 William Marsh Rice University Macroscopically manipulable nanoscale devices made from nanotube assemblies
US5869833A (en) 1997-01-16 1999-02-09 Kla-Tencor Corporation Electron beam dose control for scanning electron microscopy and critical dimension measurement instruments
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
US6344750B1 (en) 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
JP4066078B2 (ja) * 1999-05-27 2008-03-26 株式会社ニコン 写像型電子顕微鏡
US6445199B1 (en) * 1999-12-14 2002-09-03 Kla-Tencor Corporation Methods and apparatus for generating spatially resolved voltage contrast maps of semiconductor test structures
US6627884B2 (en) 2001-03-19 2003-09-30 Kla-Tencor Technologies Corporation Simultaneous flooding and inspection for charge control in an electron beam inspection machine
US7230240B2 (en) 2004-08-31 2007-06-12 Credence Systems Corporation Enhanced scanning control of charged particle beam systems
US7183546B2 (en) * 2004-09-16 2007-02-27 Applied Materials, Israel, Ltd. System and method for voltage contrast analysis of a wafer
US7205542B1 (en) * 2005-11-14 2007-04-17 Kla-Tencor Technologies Corporation Scanning electron microscope with curved axes
US7488938B1 (en) * 2006-08-23 2009-02-10 Kla-Tencor Technologies Corporation Charge-control method and apparatus for electron beam imaging
JP5292412B2 (ja) * 2009-01-15 2013-09-18 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
JP5695917B2 (ja) * 2011-01-26 2015-04-08 株式会社日立ハイテクノロジーズ 荷電粒子線装置
JP6121651B2 (ja) * 2012-04-04 2017-04-26 株式会社日立ハイテクノロジーズ 電子顕微鏡、電子顕微鏡の観察条件の設定方法、および電子顕微鏡による観察方法
US9257260B2 (en) * 2013-04-27 2016-02-09 Kla-Tencor Corporation Method and system for adaptively scanning a sample during electron beam inspection
US9165742B1 (en) * 2014-10-10 2015-10-20 Kla-Tencor Corporation Inspection site preparation
KR102387776B1 (ko) 2015-05-08 2022-04-15 케이엘에이 코포레이션 전자빔 시스템의 수차 보정 방법 및 시스템

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6066849A (en) * 1997-01-16 2000-05-23 Kla Tencor Scanning electron beam microscope
US20040000642A1 (en) * 1999-05-25 2004-01-01 Lee Veneklasen Apparatus and methods for secondary electron emission microscope with dual beam
US20070235659A1 (en) * 2001-10-10 2007-10-11 Applied Materials Israel Limited Method and device for aligning a charged particle beam column
US20050205800A1 (en) * 2004-03-05 2005-09-22 Thermo Electron Corporation Flood gun for charge neutralization
WO2008010777A1 (en) * 2006-07-21 2008-01-24 National University Of Singapore A multi-beam ion/electron spectra-microscope
US20100012838A1 (en) * 2008-07-16 2010-01-21 Ebara Corporation Inspection method and apparatus of a glass substrate for imprint
US20150364296A1 (en) * 2013-01-31 2015-12-17 Hitachi High-Technologies Corporation Composite Charged Particle Beam Detector, Charged Particle Beam Device, and Charged Particle Beam Detector
TW201532101A (zh) * 2013-12-02 2015-08-16 Hitachi High Tech Corp 掃描電子顯微鏡系統及利用其之圖案測量方法以及掃描電子顯微鏡
TW201621963A (zh) * 2014-08-29 2016-06-16 克萊譚克公司 掃描式電子顯微鏡及檢查和審查樣本之方法

Also Published As

Publication number Publication date
EP3443577A1 (en) 2019-02-20
IL261616B (en) 2022-04-01
CN109075001B (zh) 2021-12-21
KR102215496B1 (ko) 2021-02-10
WO2017176595A1 (en) 2017-10-12
EP3443577A4 (en) 2019-12-18
JP2019511107A (ja) 2019-04-18
TW201801123A (zh) 2018-01-01
IL261616A (en) 2019-03-31
JP7041666B2 (ja) 2022-03-24
SG11201807248UA (en) 2018-10-30
CN109075001A (zh) 2018-12-21
US20170287675A1 (en) 2017-10-05
KR20180123171A (ko) 2018-11-14
US10460903B2 (en) 2019-10-29

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