KR102211567B1 - 실리콘 단결정 웨이퍼의 열처리방법 - Google Patents

실리콘 단결정 웨이퍼의 열처리방법 Download PDF

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Publication number
KR102211567B1
KR102211567B1 KR1020167036364A KR20167036364A KR102211567B1 KR 102211567 B1 KR102211567 B1 KR 102211567B1 KR 1020167036364 A KR1020167036364 A KR 1020167036364A KR 20167036364 A KR20167036364 A KR 20167036364A KR 102211567 B1 KR102211567 B1 KR 102211567B1
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KR
South Korea
Prior art keywords
heat treatment
single crystal
silicon single
crystal wafer
region
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KR1020167036364A
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English (en)
Korean (ko)
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KR20170026386A (ko
Inventor
웨이 펑 쿠
후미오 타하라
마사히로 사쿠라다
슈지 타카하시
Original Assignee
신에쯔 한도타이 가부시키가이샤
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Publication of KR20170026386A publication Critical patent/KR20170026386A/ko
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Publication of KR102211567B1 publication Critical patent/KR102211567B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020167036364A 2014-07-03 2015-05-18 실리콘 단결정 웨이퍼의 열처리방법 KR102211567B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-137350 2014-07-03
JP2014137350A JP6118765B2 (ja) 2014-07-03 2014-07-03 シリコン単結晶ウェーハの熱処理方法
PCT/JP2015/002484 WO2016002123A1 (ja) 2014-07-03 2015-05-18 シリコン単結晶ウェーハの熱処理方法

Publications (2)

Publication Number Publication Date
KR20170026386A KR20170026386A (ko) 2017-03-08
KR102211567B1 true KR102211567B1 (ko) 2021-02-03

Family

ID=55018707

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167036364A KR102211567B1 (ko) 2014-07-03 2015-05-18 실리콘 단결정 웨이퍼의 열처리방법

Country Status (4)

Country Link
JP (1) JP6118765B2 (ja)
KR (1) KR102211567B1 (ja)
TW (1) TW201603141A (ja)
WO (1) WO2016002123A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102453743B1 (ko) * 2016-12-28 2022-10-11 썬에디슨 세미컨덕터 리미티드 고유 게터링 및 게이트 산화물 무결성 수율을 갖도록 규소 웨이퍼들을 처리하는 방법
JP6711320B2 (ja) * 2017-06-26 2020-06-17 株式会社Sumco シリコンウェーハ
USD901609S1 (en) * 2019-02-01 2020-11-10 Eleiko Group Ab Dumbbell

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008207991A (ja) * 2007-02-26 2008-09-11 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133734A (ja) * 1983-12-21 1985-07-16 Mitsubishi Electric Corp 半導体装置の製造方法
JP3252386B2 (ja) * 1995-03-29 2002-02-04 住友金属工業株式会社 シリコン単結晶ウェーハの製造方法
JP3534001B2 (ja) * 1999-07-30 2004-06-07 信越半導体株式会社 シリコン酸化膜およびシリコン窒化酸化膜の形成方法ならびにシリコンウエーハ
JP2013163597A (ja) * 2012-01-10 2013-08-22 Globalwafers Japan Co Ltd シリコンウェーハの製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008207991A (ja) * 2007-02-26 2008-09-11 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法

Also Published As

Publication number Publication date
KR20170026386A (ko) 2017-03-08
JP2016015426A (ja) 2016-01-28
WO2016002123A1 (ja) 2016-01-07
TW201603141A (zh) 2016-01-16
JP6118765B2 (ja) 2017-04-19

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