KR102205912B1 - 샤워 헤드 및 플라스마 처리 장치 - Google Patents
샤워 헤드 및 플라스마 처리 장치 Download PDFInfo
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- KR102205912B1 KR102205912B1 KR1020190072068A KR20190072068A KR102205912B1 KR 102205912 B1 KR102205912 B1 KR 102205912B1 KR 1020190072068 A KR1020190072068 A KR 1020190072068A KR 20190072068 A KR20190072068 A KR 20190072068A KR 102205912 B1 KR102205912 B1 KR 102205912B1
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- Prior art keywords
- plasma
- substrate
- gas
- shower head
- chamber
- Prior art date
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32394—Treating interior parts of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
- Treatment Of Fiber Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018118283A JP7097758B2 (ja) | 2018-06-21 | 2018-06-21 | シャワーヘッドおよびプラズマ処理装置 |
JPJP-P-2018-118283 | 2018-06-21 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20190143815A KR20190143815A (ko) | 2019-12-31 |
KR102205912B1 true KR102205912B1 (ko) | 2021-01-20 |
Family
ID=68968833
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190072068A KR102205912B1 (ko) | 2018-06-21 | 2019-06-18 | 샤워 헤드 및 플라스마 처리 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7097758B2 (ja) |
KR (1) | KR102205912B1 (ja) |
CN (1) | CN110634725B (ja) |
TW (1) | TWI813699B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111243933A (zh) * | 2020-02-18 | 2020-06-05 | 信利(仁寿)高端显示科技有限公司 | 一种干法刻蚀设备的上部电极及干法刻蚀设备 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009185391A (ja) * | 2002-11-28 | 2009-08-20 | Tokyo Electron Ltd | プラズマ処理容器内部材 |
JP2014022261A (ja) * | 2012-07-20 | 2014-02-03 | Tokyo Electron Ltd | プラズマ処理装置用部品及びプラズマ処理装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3559920B2 (ja) * | 1996-07-29 | 2004-09-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP4628900B2 (ja) * | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
JP2009152081A (ja) * | 2007-12-20 | 2009-07-09 | Panasonic Electric Works Co Ltd | プラズマ処理装置及びプラズマ処理方法 |
JP5782293B2 (ja) * | 2011-05-10 | 2015-09-24 | 東京エレクトロン株式会社 | プラズマ生成用電極およびプラズマ処理装置 |
JP6228400B2 (ja) * | 2013-07-16 | 2017-11-08 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
JP2016008315A (ja) * | 2014-06-23 | 2016-01-18 | 富士フイルム株式会社 | シャワープレートおよびシャワープレートの製造方法 |
JP2016225018A (ja) * | 2015-05-27 | 2016-12-28 | 東京エレクトロン株式会社 | ガス処理装置およびそれに用いる多分割シャワーヘッド |
JP6670625B2 (ja) * | 2015-07-10 | 2020-03-25 | 東京エレクトロン株式会社 | プラズマ処理装置及びシャワーヘッド |
JP6854600B2 (ja) * | 2016-07-15 | 2021-04-07 | 東京エレクトロン株式会社 | プラズマエッチング方法、プラズマエッチング装置、および基板載置台 |
-
2018
- 2018-06-21 JP JP2018118283A patent/JP7097758B2/ja active Active
-
2019
- 2019-06-18 CN CN201910525927.XA patent/CN110634725B/zh active Active
- 2019-06-18 KR KR1020190072068A patent/KR102205912B1/ko active IP Right Grant
- 2019-06-18 TW TW108121005A patent/TWI813699B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009185391A (ja) * | 2002-11-28 | 2009-08-20 | Tokyo Electron Ltd | プラズマ処理容器内部材 |
JP2014022261A (ja) * | 2012-07-20 | 2014-02-03 | Tokyo Electron Ltd | プラズマ処理装置用部品及びプラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
CN110634725B (zh) | 2022-10-11 |
TWI813699B (zh) | 2023-09-01 |
TW202006819A (zh) | 2020-02-01 |
CN110634725A (zh) | 2019-12-31 |
JP7097758B2 (ja) | 2022-07-08 |
JP2019220623A (ja) | 2019-12-26 |
KR20190143815A (ko) | 2019-12-31 |
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