KR102198021B1 - 콤팩트 정전기 방전（ｅｓｄ） 보호 구조 - Google Patents

콤팩트 정전기 방전（ｅｓｄ） 보호 구조 Download PDF

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KR102198021B1
KR102198021B1 KR1020157031623A KR20157031623A KR102198021B1 KR 102198021 B1 KR102198021 B1 KR 102198021B1 KR 1020157031623 A KR1020157031623 A KR 1020157031623A KR 20157031623 A KR20157031623 A KR 20157031623A KR 102198021 B1 KR102198021 B1 KR 102198021B1
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fet
resistor
diode
coupled
integrated circuit
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Korean (ko)
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KR20160004290A (ko
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페이-밍 다니엘 초우
욘-린 콕
징 주
스티븐 셸
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마이크로칩 테크놀로지 인코포레이티드
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    • H01L27/0248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H01L27/0605—
    • H01L27/0629—
    • H01L27/0676—
    • H01L29/778—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

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  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
KR1020157031623A 2013-05-03 2014-05-02 콤팩트 정전기 방전（ｅｓｄ） 보호 구조 Active KR102198021B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361819252P 2013-05-03 2013-05-03
US61/819,252 2013-05-03
US14/267,185 2014-05-01
US14/267,185 US9431390B2 (en) 2013-05-03 2014-05-01 Compact electrostatic discharge (ESD) protection structure
PCT/US2014/036499 WO2014179651A1 (en) 2013-05-03 2014-05-02 Compact electrostatic discharge (esd) protection structure

Publications (2)

Publication Number Publication Date
KR20160004290A KR20160004290A (ko) 2016-01-12
KR102198021B1 true KR102198021B1 (ko) 2021-01-05

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KR1020157031623A Active KR102198021B1 (ko) 2013-05-03 2014-05-02 콤팩트 정전기 방전（ｅｓｄ） 보호 구조

Country Status (7)

Country Link
US (2) US9431390B2 (enExample)
EP (1) EP2992555B1 (enExample)
JP (1) JP6366687B2 (enExample)
KR (1) KR102198021B1 (enExample)
CN (1) CN105190887B (enExample)
TW (1) TWI631685B (enExample)
WO (1) WO2014179651A1 (enExample)

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US9627883B2 (en) 2011-04-13 2017-04-18 Qorvo Us, Inc. Multiple port RF switch ESD protection using single protection structure
US9728532B2 (en) * 2011-04-13 2017-08-08 Qorvo Us, Inc. Clamp based ESD protection circuits
US9431390B2 (en) * 2013-05-03 2016-08-30 Microchip Technology Incorporated Compact electrostatic discharge (ESD) protection structure
KR20150048427A (ko) * 2013-10-28 2015-05-07 에스케이하이닉스 주식회사 디스차지 회로
US10610326B2 (en) * 2015-06-05 2020-04-07 Cianna Medical, Inc. Passive tags, and systems and methods for using them
KR102364340B1 (ko) * 2015-06-30 2022-02-17 엘지디스플레이 주식회사 표시장치
JP6597357B2 (ja) * 2016-02-09 2019-10-30 三菱電機株式会社 保護ダイオード付き電界効果トランジスタ
US10158029B2 (en) 2016-02-23 2018-12-18 Analog Devices, Inc. Apparatus and methods for robust overstress protection in compound semiconductor circuit applications
US10827949B2 (en) 2016-04-06 2020-11-10 Cianna Medical, Inc. Reflector markers and systems and methods for identifying and locating them
ES2971276T3 (es) 2016-04-06 2024-06-04 Cianna Medical Inc Marcadores reflectantes y sistemas para identificarlos y localizarlos
US20180026029A1 (en) * 2016-07-21 2018-01-25 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated ESD Protection Circuit for GaN Based Device
US10438940B2 (en) * 2016-12-29 2019-10-08 Nxp Usa, Inc. ESD protection for depletion-mode devices
US10475783B2 (en) * 2017-10-13 2019-11-12 Nxp B.V. Electrostatic discharge protection apparatuses
US10381828B1 (en) * 2018-01-29 2019-08-13 Dialog Semiconductor (Uk) Limited Overvoltage protection of transistor devices
US11883150B2 (en) 2018-09-06 2024-01-30 Cianna Medical, Inc. Systems for identifying and locating reflectors using orthogonal sequences of reflector switching
GB2580155A (en) * 2018-12-21 2020-07-15 Comet Ag Radiofrequency power amplifier
CN111756028B (zh) * 2019-03-29 2022-07-01 北京小米移动软件有限公司 电子设备
CN110137172B (zh) * 2019-05-15 2021-12-10 英诺赛科（珠海）科技有限公司 静电防护电路及电子装置
WO2021092032A1 (en) 2019-11-05 2021-05-14 Cianna Medical, Inc. Systems and methods for imaging a body region using implanted markers
US11309435B2 (en) * 2020-03-09 2022-04-19 Globalfoundries U.S. Inc. Bandgap reference circuit including vertically stacked active SOI devices
US11764204B2 (en) * 2020-06-18 2023-09-19 Analog Devices, Inc. Electrostatic discharge and overdrive protection circuitry
KR20220004487A (ko) * 2020-07-03 2022-01-11 에스케이하이닉스 시스템아이씨 주식회사 낮은 트리거 전압을 갖는 정전기 방전 보호 소자
CN117043837A (zh) 2021-07-20 2023-11-10 三星电子株式会社 包括显示模块的显示装置及其制造方法
CN114551410B (zh) * 2022-02-23 2025-12-05 深圳市时代速信科技有限公司 半导体器件及其制备方法
US12495618B2 (en) 2022-06-08 2025-12-09 Changxin Memory Technologies, Inc. Electro-static protection structure, silicon controlled rectifier and semiconductor memory
CN117239685A (zh) * 2022-06-08 2023-12-15 长鑫存储技术有限公司 静电保护结构、可控硅整流器和半导体存储器

Citations (2)

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JP2003347417A (ja) 2002-05-20 2003-12-05 Internatl Business Mach Corp <Ibm> 集積回路においてｅｓｄ保護または雑音軽減あるいはその両方を提供するための方法および装置
US20120262828A1 (en) 2011-04-13 2012-10-18 Rf Micro Devices, Inc. Clamp based esd protection circuits

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US6835969B1 (en) * 2003-06-26 2004-12-28 Raytheon Company Split-channel high electron mobility transistor (HEMT) device
US6984853B2 (en) 2004-02-26 2006-01-10 Agilent Technologies, Inc Integrated circuit with enhancement mode pseudomorphic high electron mobility transistors having on-chip electrostatic discharge protection
JP2006165182A (ja) * 2004-12-06 2006-06-22 Toshiba Corp 電界効果トランジスタ
KR100818086B1 (ko) * 2006-04-06 2008-03-31 주식회사 하이닉스반도체 정전기 방전 보호 회로
US7593204B1 (en) 2006-06-06 2009-09-22 Rf Micro Devices, Inc. On-chip ESD protection circuit for radio frequency (RF) integrated circuits
TWI317166B (en) 2006-08-23 2009-11-11 Win Semiconductors Corp On-chip esd protection circuit using enhancement-mode hemt/mesfet technology
US8144441B2 (en) * 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits
US7804669B2 (en) * 2007-04-19 2010-09-28 Qualcomm Incorporated Stacked ESD protection circuit having reduced trigger voltage
US7881029B1 (en) 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Depletion-mode field effect transistor based electrostatic discharge protection circuit
US9171963B2 (en) 2011-04-11 2015-10-27 University Of Central Florida Research Foundation, Inc. Electrostatic discharge shunting circuit
US8970998B2 (en) * 2012-12-31 2015-03-03 Win Semiconductors Corp. Compound semiconductor ESD protection devices
US9064704B2 (en) * 2013-02-15 2015-06-23 Win Semiconductors Corp. Integrated circuits with ESD protection devices
US9431390B2 (en) * 2013-05-03 2016-08-30 Microchip Technology Incorporated Compact electrostatic discharge (ESD) protection structure

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2003347417A (ja) 2002-05-20 2003-12-05 Internatl Business Mach Corp <Ibm> 集積回路においてｅｓｄ保護または雑音軽減あるいはその両方を提供するための方法および装置
US20120262828A1 (en) 2011-04-13 2012-10-18 Rf Micro Devices, Inc. Clamp based esd protection circuits

Also Published As

Publication number Publication date
JP6366687B2 (ja) 2018-08-01
US9685432B2 (en) 2017-06-20
KR20160004290A (ko) 2016-01-12
TWI631685B (zh) 2018-08-01
US9431390B2 (en) 2016-08-30
EP2992555A1 (en) 2016-03-09
WO2014179651A1 (en) 2014-11-06
TW201508894A (zh) 2015-03-01
JP2016521008A (ja) 2016-07-14
CN105190887A (zh) 2015-12-23
US20140327048A1 (en) 2014-11-06
CN105190887B (zh) 2018-11-09
EP2992555B1 (en) 2018-04-04
US20160372459A1 (en) 2016-12-22

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