KR102185805B1 - 플라즈마 처리 장치를 클리닝하는 방법 - Google Patents

플라즈마 처리 장치를 클리닝하는 방법 Download PDF

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KR102185805B1
KR102185805B1 KR1020170063644A KR20170063644A KR102185805B1 KR 102185805 B1 KR102185805 B1 KR 102185805B1 KR 1020170063644 A KR1020170063644 A KR 1020170063644A KR 20170063644 A KR20170063644 A KR 20170063644A KR 102185805 B1 KR102185805 B1 KR 102185805B1
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Prior art keywords
cleaning
chamber
plasma source
remote plasma
process chamber
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KR20170132685A (ko
Inventor
크룩 캐서린
캐루터스 마크
프라이스 앤드류
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에스피티에스 테크놀러지스 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1020170063644A 2016-05-24 2017-05-23 플라즈마 처리 장치를 클리닝하는 방법 Active KR102185805B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1609119.1A GB201609119D0 (en) 2016-05-24 2016-05-24 A method of cleaning a plasma processing module
GB1609119.1 2016-05-24

Publications (2)

Publication Number Publication Date
KR20170132685A KR20170132685A (ko) 2017-12-04
KR102185805B1 true KR102185805B1 (ko) 2020-12-02

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Country Status (7)

Country Link
US (1) US10309014B2 (https=)
EP (1) EP3249073A1 (https=)
JP (1) JP7011403B2 (https=)
KR (1) KR102185805B1 (https=)
CN (1) CN107424898B (https=)
GB (1) GB201609119D0 (https=)
TW (1) TWI795358B (https=)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
CN108300978B (zh) * 2017-01-12 2020-10-09 和舰科技(苏州)有限公司 一种侦测气相沉积机台清理结束时间点的装置和方法
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
WO2020014113A1 (en) * 2018-07-09 2020-01-16 Lam Research Corporation Radio frequency (rf) signal source supplying rf plasma generator and remote plasma generator
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) * 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US20200266037A1 (en) * 2019-02-14 2020-08-20 Advanced Energy Industries, Inc. Maintenance for remote plasma sources
US11264219B2 (en) * 2019-04-17 2022-03-01 Samsung Electronics Co., Ltd. Radical monitoring apparatus and plasma apparatus including the monitoring apparatus
US11854773B2 (en) * 2020-03-31 2023-12-26 Applied Materials, Inc. Remote plasma cleaning of chambers for electronics manufacturing systems
TWI748741B (zh) * 2020-11-11 2021-12-01 暉盛科技股份有限公司 電漿晶圓清潔機及使用其清潔晶圓的方法
KR20220093499A (ko) * 2020-12-28 2022-07-05 에스케이스페셜티 주식회사 F3no 가스를 이용한 반도체 및 디스플레이 화학기상 증착 챔버의 건식 세정 방법
JP7579752B2 (ja) * 2021-05-27 2024-11-08 東京エレクトロン株式会社 クリーニングを制御する方法及びプラズマ処理装置
WO2024107561A1 (en) * 2022-11-16 2024-05-23 Mks Instruments, Inc. Radical sensing for process tool diagnostics
US20240363317A1 (en) * 2023-04-25 2024-10-31 Applied Materials, Inc. Method of plasma cleaning of fused silica tubes

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100242938B1 (ko) 1995-01-13 2000-03-02 니시히라 순지 예비적처리의 완료점 검출장치 및 완료점 검출방법
JP2003530706A (ja) 2000-04-07 2003-10-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 堆積処理に用いる装置に対し実施されるクリーニング量を決定する方法
KR100710923B1 (ko) 2004-06-02 2007-04-23 동경 엘렉트론 주식회사 플라즈마 처리장치 및 임피던스 조정방법
US20140053867A1 (en) 2009-01-16 2014-02-27 Novellus Systems, Inc. Plasma clean method for deposition chamber
KR101429291B1 (ko) 2007-07-31 2014-08-11 르네사스 일렉트로닉스 가부시키가이샤 반도체 집적회로장치의 제조방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1022280A (ja) * 1996-07-08 1998-01-23 Hitachi Ltd プラズマｃｖｄ装置およびそのクリーニング方法
US6079426A (en) * 1997-07-02 2000-06-27 Applied Materials, Inc. Method and apparatus for determining the endpoint in a plasma cleaning process
JP3296292B2 (ja) * 1998-06-26 2002-06-24 松下電器産業株式会社 エッチング方法、クリーニング方法、及びプラズマ処理装置
JP2002151417A (ja) * 2000-11-08 2002-05-24 Hitachi Ltd プラズマｃｖｄ装置
JP2002151475A (ja) 2000-11-14 2002-05-24 Toshiba Corp 薄膜処理モニタリング方法と薄膜処理装置
DE10241590A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Verfahren zur Bestimmung des Endpunktes beim Reinigungsätzen
JP2005033173A (ja) * 2003-06-16 2005-02-03 Renesas Technology Corp 半導体集積回路装置の製造方法
US20060090773A1 (en) * 2004-11-04 2006-05-04 Applied Materials, Inc. Sulfur hexafluoride remote plasma source clean
TWI355038B (en) * 2006-10-04 2011-12-21 Macronix Int Co Ltd Method of monitoring plasma process tool, protecti
KR20100069392A (ko) * 2008-12-16 2010-06-24 삼성전자주식회사 증착, 식각 혹은 클리닝 공정에서 증착, 식각 혹은 클리닝 종료 시점을 결정하기 위하여 수정 결정 미소저울을 이용하는 반도체 소자의 제조장치 및 이를 이용한 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100242938B1 (ko) 1995-01-13 2000-03-02 니시히라 순지 예비적처리의 완료점 검출장치 및 완료점 검출방법
JP2003530706A (ja) 2000-04-07 2003-10-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 堆積処理に用いる装置に対し実施されるクリーニング量を決定する方法
KR100710923B1 (ko) 2004-06-02 2007-04-23 동경 엘렉트론 주식회사 플라즈마 처리장치 및 임피던스 조정방법
KR101429291B1 (ko) 2007-07-31 2014-08-11 르네사스 일렉트로닉스 가부시키가이샤 반도체 집적회로장치의 제조방법
US20140053867A1 (en) 2009-01-16 2014-02-27 Novellus Systems, Inc. Plasma clean method for deposition chamber

Also Published As

Publication number Publication date
CN107424898B (zh) 2021-03-19
GB201609119D0 (en) 2016-07-06
US20170342556A1 (en) 2017-11-30
JP2017212445A (ja) 2017-11-30
TWI795358B (zh) 2023-03-11
KR20170132685A (ko) 2017-12-04
TW201805079A (zh) 2018-02-16
EP3249073A1 (en) 2017-11-29
US10309014B2 (en) 2019-06-04
JP7011403B2 (ja) 2022-01-26
CN107424898A (zh) 2017-12-01

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