KR102153848B1 - 촬상 소자 및 그 제조 방법 - Google Patents

촬상 소자 및 그 제조 방법 Download PDF

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Publication number
KR102153848B1
KR102153848B1 KR1020197033901A KR20197033901A KR102153848B1 KR 102153848 B1 KR102153848 B1 KR 102153848B1 KR 1020197033901 A KR1020197033901 A KR 1020197033901A KR 20197033901 A KR20197033901 A KR 20197033901A KR 102153848 B1 KR102153848 B1 KR 102153848B1
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KR
South Korea
Prior art keywords
color filter
unit
color
pixel
photodiode
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Expired - Fee Related
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KR1020197033901A
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English (en)
Korean (ko)
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KR20190133271A (ko
Inventor
마사시 나카타
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
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Publication of KR20190133271A publication Critical patent/KR20190133271A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/12—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with one sensor only
    • H01L27/14621—
    • H01L27/1462—
    • H01L27/14643—
    • H01L27/14683—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths
    • H04N23/13—Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths with multiple sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N2209/00—Details of colour television systems
    • H04N2209/04—Picture signal generators
    • H04N2209/041—Picture signal generators using solid-state devices
    • H04N2209/048—Picture signal generators using solid-state devices having several pick-up sensors
    • H04N2209/049—Picture signal generators using solid-state devices having several pick-up sensors having three pick-up sensors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020197033901A 2011-07-29 2012-07-20 촬상 소자 및 그 제조 방법 Expired - Fee Related KR102153848B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2011-166382 2011-07-29
JP2011166382A JP6080343B2 (ja) 2011-07-29 2011-07-29 撮像素子およびその製造方法
PCT/JP2012/068417 WO2013018559A1 (ja) 2011-07-29 2012-07-20 撮像素子およびその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147001187A Division KR102048592B1 (ko) 2011-07-29 2012-07-20 촬상 소자 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20190133271A KR20190133271A (ko) 2019-12-02
KR102153848B1 true KR102153848B1 (ko) 2020-09-08

Family

ID=47629087

Family Applications (2)

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KR1020197033901A Expired - Fee Related KR102153848B1 (ko) 2011-07-29 2012-07-20 촬상 소자 및 그 제조 방법
KR1020147001187A Expired - Fee Related KR102048592B1 (ko) 2011-07-29 2012-07-20 촬상 소자 및 그 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020147001187A Expired - Fee Related KR102048592B1 (ko) 2011-07-29 2012-07-20 촬상 소자 및 그 제조 방법

Country Status (6)

Country Link
US (1) US9380277B2 (enExample)
EP (1) EP2738811B1 (enExample)
JP (1) JP6080343B2 (enExample)
KR (2) KR102153848B1 (enExample)
CN (1) CN103650143B (enExample)
WO (1) WO2013018559A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016103430A1 (ja) 2014-12-25 2016-06-30 キヤノン株式会社 ラインセンサ、画像読取装置、画像形成装置
US12148777B2 (en) * 2021-05-17 2024-11-19 Omnivision Technologies, Inc. Image sensor with spectral-filter-based crosstalk suppression

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303468A (ja) 2005-03-24 2006-11-02 Sony Corp 固体撮像素子及び撮像装置
JP2007294552A (ja) * 2006-04-23 2007-11-08 Nikon Corp 固体撮像装置
JP2010278272A (ja) 2009-05-29 2010-12-09 Panasonic Corp 固体撮像素子および固体撮像素子の製造方法
JP2011049203A (ja) * 2009-08-25 2011-03-10 Toppan Printing Co Ltd 固体撮像素子の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02285674A (ja) 1989-04-26 1990-11-22 Toppan Printing Co Ltd カラーフィルター及び固体撮像素子
JP2951942B1 (ja) * 1998-05-26 1999-09-20 松下電子工業株式会社 固体撮像装置の製造方法
JP2002184965A (ja) 2000-12-15 2002-06-28 Sony Corp カラー固体撮像素子とその製造方法
US7248297B2 (en) * 2001-11-30 2007-07-24 The Board Of Trustees Of The Leland Stanford Junior University Integrated color pixel (ICP)
JP2006033493A (ja) 2004-07-16 2006-02-02 Matsushita Electric Ind Co Ltd 撮像装置
EP1812968B1 (en) * 2004-08-25 2019-01-16 Callahan Cellular L.L.C. Apparatus for multiple camera devices and method of operating same
US20080090323A1 (en) * 2006-10-12 2008-04-17 United Microelectronics Corp. Image sensor and method of fabricating the same
JP4349456B2 (ja) * 2006-10-23 2009-10-21 ソニー株式会社 固体撮像素子
JP2008288243A (ja) * 2007-05-15 2008-11-27 Sony Corp 固体撮像装置とその製造方法および撮像装置
JP5076679B2 (ja) * 2007-06-28 2012-11-21 ソニー株式会社 固体撮像装置及びカメラモジュール
US7675024B2 (en) * 2008-04-23 2010-03-09 Aptina Imaging Corporation Method and apparatus providing color filter array with non-uniform color filter sizes
JP2009296276A (ja) 2008-06-04 2009-12-17 Sony Corp 撮像装置およびカメラ
JP5446484B2 (ja) 2008-07-10 2014-03-19 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP5428451B2 (ja) 2009-03-30 2014-02-26 ソニー株式会社 固体撮像装置とその製造方法および撮像装置
JP4770928B2 (ja) * 2009-01-13 2011-09-14 ソニー株式会社 光学素子および固体撮像素子
JP2010258104A (ja) * 2009-04-22 2010-11-11 Panasonic Corp 固体撮像素子
JP2011040454A (ja) * 2009-08-07 2011-02-24 Sony Corp 固体撮像装置、固体撮像装置の製造方法および電子機器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006303468A (ja) 2005-03-24 2006-11-02 Sony Corp 固体撮像素子及び撮像装置
JP2007294552A (ja) * 2006-04-23 2007-11-08 Nikon Corp 固体撮像装置
JP2010278272A (ja) 2009-05-29 2010-12-09 Panasonic Corp 固体撮像素子および固体撮像素子の製造方法
JP2011049203A (ja) * 2009-08-25 2011-03-10 Toppan Printing Co Ltd 固体撮像素子の製造方法

Also Published As

Publication number Publication date
CN103650143B (zh) 2016-10-26
WO2013018559A1 (ja) 2013-02-07
EP2738811B1 (en) 2018-10-17
JP2013030652A (ja) 2013-02-07
EP2738811A1 (en) 2014-06-04
US20140146206A1 (en) 2014-05-29
JP6080343B2 (ja) 2017-02-15
EP2738811A4 (en) 2015-04-01
KR20140053961A (ko) 2014-05-08
KR102048592B1 (ko) 2020-01-22
CN103650143A (zh) 2014-03-19
US9380277B2 (en) 2016-06-28
KR20190133271A (ko) 2019-12-02

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