KR102103128B1 - 애벌란시 포토 다이오드 센서 - Google Patents

애벌란시 포토 다이오드 센서 Download PDF

Info

Publication number
KR102103128B1
KR102103128B1 KR1020197015450A KR20197015450A KR102103128B1 KR 102103128 B1 KR102103128 B1 KR 102103128B1 KR 1020197015450 A KR1020197015450 A KR 1020197015450A KR 20197015450 A KR20197015450 A KR 20197015450A KR 102103128 B1 KR102103128 B1 KR 102103128B1
Authority
KR
South Korea
Prior art keywords
region
substrate
disposed
cathode
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020197015450A
Other languages
English (en)
Korean (ko)
Other versions
KR20190109388A (ko
Inventor
쿄스케 이토
토시후비 와카노
유스케 오타케
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20190109388A publication Critical patent/KR20190109388A/ko
Application granted granted Critical
Publication of KR102103128B1 publication Critical patent/KR102103128B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/107—
    • H01L31/02002—
    • H01L31/0224—
    • H01L31/0352—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
KR1020197015450A 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서 Active KR102103128B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017206729A JP6860467B2 (ja) 2017-10-26 2017-10-26 フォトダイオード、画素回路、および、フォトダイオードの製造方法
JPJP-P-2017-206729 2017-10-26
PCT/JP2018/032637 WO2019082513A1 (en) 2017-10-26 2018-09-03 AVALANCHE PHOTODIODE SENSOR

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207010621A Division KR20200063160A (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서

Publications (2)

Publication Number Publication Date
KR20190109388A KR20190109388A (ko) 2019-09-25
KR102103128B1 true KR102103128B1 (ko) 2020-04-21

Family

ID=63638247

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020197015450A Active KR102103128B1 (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서
KR1020207010621A Withdrawn KR20200063160A (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020207010621A Withdrawn KR20200063160A (ko) 2017-10-26 2018-09-03 애벌란시 포토 다이오드 센서

Country Status (6)

Country Link
US (1) US11333549B2 (enExample)
EP (1) EP3545559B1 (enExample)
JP (1) JP6860467B2 (enExample)
KR (2) KR102103128B1 (enExample)
CN (1) CN110036491B (enExample)
WO (1) WO2019082513A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7445397B2 (ja) * 2019-07-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器
JP7362352B2 (ja) 2019-08-23 2023-10-17 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US11374135B2 (en) * 2019-08-30 2022-06-28 Globalfoundries Singapore Pte. Ltd. Sensor and method of forming the same
KR102857511B1 (ko) * 2019-12-26 2025-09-09 하마마츠 포토닉스 가부시키가이샤 측거 이미지 센서
WO2021131651A1 (ja) * 2019-12-26 2021-07-01 浜松ホトニクス株式会社 測距イメージセンサ及びその製造方法
KR20210121851A (ko) * 2020-03-31 2021-10-08 에스케이하이닉스 주식회사 이미지 센싱 장치
CN114124212A (zh) * 2020-08-26 2022-03-01 华为技术有限公司 一种分光探测器及光纤通信系统
JP2022054553A (ja) * 2020-09-28 2022-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
CN219142015U (zh) * 2022-05-30 2023-06-06 神盾股份有限公司 光学感测装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150054111A1 (en) 2013-08-23 2015-02-26 Kabushiki Kaisha Toyota Chuo Kenkyusho Single photon avalanche diode

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5015494B2 (ja) * 2006-05-22 2012-08-29 住友電工デバイス・イノベーション株式会社 半導体受光素子
WO2008113067A2 (en) 2007-03-15 2008-09-18 Johns Hopkins University Deep submicron and nano cmos single photon photodetector pixel with event based circuits for readout data-rate reduction
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
JP5631668B2 (ja) * 2010-09-02 2014-11-26 Ｎｔｔエレクトロニクス株式会社 アバランシ・フォトダイオード
CN102184929B (zh) * 2011-03-24 2013-04-24 南京大学 紫外光雪崩管成像阵列像元、其应用方法及雪崩管成像阵列
JP5508356B2 (ja) * 2011-07-26 2014-05-28 シャープ株式会社 固体撮像装置およびその駆動方法、固体撮像装置の製造方法、並びに電子情報機器
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
WO2015120583A1 (zh) * 2014-02-12 2015-08-20 华为技术有限公司 一种雪崩光电二极管及其制造方法
WO2016013170A1 (ja) * 2014-07-25 2016-01-28 パナソニックＩｐマネジメント株式会社 フォトダイオード、フォトダイオードアレイ、及び固体撮像素子
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US10483306B2 (en) * 2016-03-30 2019-11-19 Sony Corporation Photoelectric conversion element and photoelectric conversion device
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150054111A1 (en) 2013-08-23 2015-02-26 Kabushiki Kaisha Toyota Chuo Kenkyusho Single photon avalanche diode

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Tomislav Resetar et al. Development of gated pinned avalanche photodiode pixels fog high-speed low light imaging, 2016. 8. 15. 공개

Also Published As

Publication number Publication date
US11333549B2 (en) 2022-05-17
EP3545559A1 (en) 2019-10-02
CN110036491B (zh) 2024-02-13
JP6860467B2 (ja) 2021-04-14
JP2019079968A (ja) 2019-05-23
WO2019082513A1 (en) 2019-05-02
CN110036491A (zh) 2019-07-19
KR20190109388A (ko) 2019-09-25
EP3545559B1 (en) 2024-11-27
KR20200063160A (ko) 2020-06-04
US20200249083A1 (en) 2020-08-06

Similar Documents

Publication Publication Date Title
KR102103128B1 (ko) 애벌란시 포토 다이오드 센서
JP7073325B2 (ja) センシングデバイス
US11800251B2 (en) Light receiving device and method for controlling same, and electronic apparatus comprising dual comparison circuits with supplied zero reset signals
WO2022158288A1 (ja) 光検出装置
JPWO2019031001A1 (ja) 固体撮像装置、電子装置および固体撮像装置の制御方法
EP4063914A1 (en) Ranging device and ranging method
EP3721483B1 (en) Avalanche photodiode sensor, and electronic device
CN114585941B (zh) 固态成像装置和距离测量系统
US20210399032A1 (en) Light reception element and electronic apparatus
US20250040269A1 (en) Photodetection device and distance measuring system
CN119547584A (zh) 光检测器和距离测量设备
US20230228875A1 (en) Solid-state imaging element, sensing system, and control method of solid-state imaging element
KR20230069093A (ko) 측거 장치
US12192659B2 (en) Solid-state imaging element, imaging device, and method for controlling solid-state imaging element
US20240072080A1 (en) Light detection device and distance measurement apparatus
KR20240171108A (ko) 광검출기 및 거리 측정 장치
JP2025135117A (ja) 光検出装置および電子機器

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20190529

Patent event code: PA01051R01D

Comment text: International Patent Application

A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20190910

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20190910

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

PG1501 Laying open of application
E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20200115

PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20200413

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20200414

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20200414

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20240401

Start annual number: 5

End annual number: 5