CN110036491B - 雪崩光电二极管传感器 - Google Patents

雪崩光电二极管传感器 Download PDF

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Publication number
CN110036491B
CN110036491B CN201880004684.9A CN201880004684A CN110036491B CN 110036491 B CN110036491 B CN 110036491B CN 201880004684 A CN201880004684 A CN 201880004684A CN 110036491 B CN110036491 B CN 110036491B
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China
Prior art keywords
region
cathode
avalanche photodiode
substrate
photoelectric conversion
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CN201880004684.9A
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English (en)
Chinese (zh)
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CN110036491A (zh
Inventor
伊东恭佑
若野寿史
大竹悠介
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G01J2001/4446—Type of detector
    • G01J2001/446—Photodiode
    • G01J2001/4466—Avalanche

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Optical Radar Systems And Details Thereof (AREA)
CN201880004684.9A 2017-10-26 2018-09-03 雪崩光电二极管传感器 Active CN110036491B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017206729A JP6860467B2 (ja) 2017-10-26 2017-10-26 フォトダイオード、画素回路、および、フォトダイオードの製造方法
JP2017-206729 2017-10-26
PCT/JP2018/032637 WO2019082513A1 (en) 2017-10-26 2018-09-03 AVALANCHE PHOTODIODE SENSOR

Publications (2)

Publication Number Publication Date
CN110036491A CN110036491A (zh) 2019-07-19
CN110036491B true CN110036491B (zh) 2024-02-13

Family

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CN201880004684.9A Active CN110036491B (zh) 2017-10-26 2018-09-03 雪崩光电二极管传感器

Country Status (6)

Country Link
US (1) US11333549B2 (enExample)
EP (1) EP3545559B1 (enExample)
JP (1) JP6860467B2 (enExample)
KR (2) KR102103128B1 (enExample)
CN (1) CN110036491B (enExample)
WO (1) WO2019082513A1 (enExample)

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JP7445397B2 (ja) * 2019-07-31 2024-03-07 ソニーセミコンダクタソリューションズ株式会社 受光素子および電子機器
JP7362352B2 (ja) 2019-08-23 2023-10-17 キヤノン株式会社 光電変換装置、光電変換システム、および移動体
US11374135B2 (en) * 2019-08-30 2022-06-28 Globalfoundries Singapore Pte. Ltd. Sensor and method of forming the same
KR102857511B1 (ko) * 2019-12-26 2025-09-09 하마마츠 포토닉스 가부시키가이샤 측거 이미지 센서
WO2021131651A1 (ja) * 2019-12-26 2021-07-01 浜松ホトニクス株式会社 測距イメージセンサ及びその製造方法
KR20210121851A (ko) * 2020-03-31 2021-10-08 에스케이하이닉스 주식회사 이미지 센싱 장치
CN114124212A (zh) * 2020-08-26 2022-03-01 华为技术有限公司 一种分光探测器及光纤通信系统
JP2022054553A (ja) * 2020-09-28 2022-04-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、および、撮像装置
CN219142015U (zh) * 2022-05-30 2023-06-06 神盾股份有限公司 光学感测装置

Citations (5)

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CN101079453A (zh) * 2006-05-22 2007-11-28 优迪那半导体有限公司 半导体受光元件
CN102184929A (zh) * 2011-03-24 2011-09-14 南京大学 紫外光雪崩管成像阵列像元、其应用方法及雪崩管成像阵列
CN103081130A (zh) * 2010-09-02 2013-05-01 Ntt电子股份有限公司 雪崩光电二极管
CN105247691A (zh) * 2014-02-12 2016-01-13 华为技术有限公司 一种雪崩光电二极管及其制造方法
CN106537614A (zh) * 2014-07-25 2017-03-22 松下知识产权经营株式会社 光电二极管、光电二极管阵列、以及固体摄像元件

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WO2008113067A2 (en) 2007-03-15 2008-09-18 Johns Hopkins University Deep submicron and nano cmos single photon photodetector pixel with event based circuits for readout data-rate reduction
ITTO20080046A1 (it) * 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
JP5508356B2 (ja) * 2011-07-26 2014-05-28 シャープ株式会社 固体撮像装置およびその駆動方法、固体撮像装置の製造方法、並びに電子情報機器
JP5926921B2 (ja) * 2011-10-21 2016-05-25 浜松ホトニクス株式会社 光検出装置
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
JP6362478B2 (ja) * 2014-08-27 2018-07-25 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
US10483306B2 (en) * 2016-03-30 2019-11-19 Sony Corporation Photoelectric conversion element and photoelectric conversion device
US10777597B2 (en) * 2017-03-22 2020-09-15 Sony Semiconductor Solutions Corporation Imaging device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101079453A (zh) * 2006-05-22 2007-11-28 优迪那半导体有限公司 半导体受光元件
CN103081130A (zh) * 2010-09-02 2013-05-01 Ntt电子股份有限公司 雪崩光电二极管
CN102184929A (zh) * 2011-03-24 2011-09-14 南京大学 紫外光雪崩管成像阵列像元、其应用方法及雪崩管成像阵列
CN105247691A (zh) * 2014-02-12 2016-01-13 华为技术有限公司 一种雪崩光电二极管及其制造方法
CN106537614A (zh) * 2014-07-25 2017-03-22 松下知识产权经营株式会社 光电二极管、光电二极管阵列、以及固体摄像元件

Also Published As

Publication number Publication date
US11333549B2 (en) 2022-05-17
EP3545559A1 (en) 2019-10-02
JP6860467B2 (ja) 2021-04-14
JP2019079968A (ja) 2019-05-23
WO2019082513A1 (en) 2019-05-02
CN110036491A (zh) 2019-07-19
KR20190109388A (ko) 2019-09-25
EP3545559B1 (en) 2024-11-27
KR102103128B1 (ko) 2020-04-21
KR20200063160A (ko) 2020-06-04
US20200249083A1 (en) 2020-08-06

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