WO2015120583A1 - 一种雪崩光电二极管及其制造方法 - Google Patents

一种雪崩光电二极管及其制造方法 Download PDF

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WO2015120583A1
WO2015120583A1 PCT/CN2014/071987 CN2014071987W WO2015120583A1 WO 2015120583 A1 WO2015120583 A1 WO 2015120583A1 CN 2014071987 W CN2014071987 W CN 2014071987W WO 2015120583 A1 WO2015120583 A1 WO 2015120583A1
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layer
microns
sige layer
type
silicon germanium
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PCT/CN2014/071987
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English (en)
French (fr)
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余长亮
廖振兴
赵彦立
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华为技术有限公司
华中科技大学
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Priority to EP14882321.4A priority Critical patent/EP3089224B1/en
Priority to CN201480000097.4A priority patent/CN105247691B/zh
Priority to PCT/CN2014/071987 priority patent/WO2015120583A1/zh
Priority to ES14882321T priority patent/ES2713384T3/es
Publication of WO2015120583A1 publication Critical patent/WO2015120583A1/zh
Priority to US15/234,256 priority patent/US9705023B2/en

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/131—Integrated optical circuits characterised by the manufacturing method by using epitaxial growth
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
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    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/12061—Silicon
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12123—Diode
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to the field of communications, and in particular, to an avalanche photodiode and a method of fabricating the same. Background technique
  • Embodiments of the present invention provide an avalanche photodiode and a method of fabricating the same, which can solve the problems of large APD dark current and high cost in the prior art.
  • the embodiment of the present invention uses the following technical solutions:
  • an avalanche photodiode includes:
  • the GeOI substrate is provided with an intrinsic ⁇ I-Ge absorbing layer (3 1 ) for absorbing optical signals to generate photogenerated carriers;
  • a second positive p-type germanium-silicon SiGe layer (24) is disposed on the I-Ge absorber layer (31), and a first p-type germanium-silicon SiGe layer is disposed on the second p-type germanium-silicon SiGe layer (24). (23), wherein a content of germanium Ge in the first p-type SiGe layer (23) and the second p-type SiGe layer (24) is 20% or less;
  • the GeOI substrate further provided with a first oxide layer is silicon dioxide Si0 2 (72), said first oxide layer is silicon dioxide Si0 2 is provided with a second oxide layer on the silicon dioxide Si0 2 (72) a first silicon germanium SiGe layer is disposed on the first silicon dioxide SiO 2 oxide layer (72)
  • a second silicon germanium SiGe layer (22), wherein a germanium Si content in the germanium silicon SiGe layer is less than or equal to 20%;
  • the second silicon dioxide SiO 2 oxide layer (73) and the first silicon germanium SiGe layer (21) are further provided with a first tapered Taper-type silicon Si waveguide layer (11) and a second Taper-type silicon Si waveguide.
  • the second SiGe layer (22) and the first p-type SiGe layer (23) are provided with a negative n-type heavily doped silicon Si multiplication layer (13);
  • the n-type heavily doped silicon Si multiplication layer (13) is provided with a cathode electrode (62); the GeOI substrate is provided with an anode electrode (61);
  • a sum of thicknesses of the first silicon germanium SiGe layer (21) and the second germanium silicon SiGe layer (22) and the first p-type germanium silicon is different.
  • the first silicon germanium SiGe layer (21) has a width ranging from 1.4 micrometers to 30 micrometers, a length ranging from 10 micrometers to 500 micrometers, and a thickness of 0.02 micrometers to 2.7. Micron.
  • the width of the second silicon germanium SiGe layer (22) is gradually decreased from 1.4 micrometers to 30 micrometers to 1 micrometer to 20 micrometers. Micron, ranging in length from 1 micron to 20 microns, and thickness ranging from 0.02 microns to 2.7 microns.
  • the first p-type silicon germanium SiGe layer (23) has a width ranging from 1 micrometer to 20 micrometers, a length ranging from 4 micrometers to 230 micrometers, and a thickness ranging from 0.02. Micron to 2.7 microns.
  • the second p-type germanium-silicon SiGe layer (24) has a width ranging from 1.1 micrometers to 22 micrometers, and a length ranging from 4 micrometers to 230 micrometers. It is from 0.005 microns to 1 micron.
  • a method of fabricating an avalanche photodiode includes:
  • An intrinsic ⁇ I-Ge absorber layer (31) is epitaxially grown on the germanium GeOI substrate; a second positive p-type germanium-silicon SiGe layer (24) is grown on the intrinsic ⁇ I-Ge absorber layer (31);
  • An anode electrode (61) is grown on the ⁇ GeOI substrate on the insulator;
  • a cathode electrode (62) is grown on the n-type heavily doped Si multiplication layer (13).
  • the first silicon germanium SiGe has a width ranging from 1.4 micrometers to 30 micrometers, a length ranging from 10 micrometers to 500 micrometers, and a thickness ranging from 0.02 micrometers to 2.7 micrometers.
  • the width of the second silicon germanium SiGe layer (22) ranges from 1.4 micrometers to 30 micrometers to 1 micrometer to 20 micrometers, and the length ranges from 1 micrometer. To 20 microns, the thickness ranges from 0.02 microns to 2.7 microns.
  • the first p-type germanium-silicon SiGe layer (23) has a width ranging from 1 micrometer to 20 micrometers, a length ranging from 4 micrometers to 230 micrometers, and a thickness ranging from 0.02. Micron to 2.7 microns.
  • the second p-type germanium-silicon SiGe layer (24) has a width ranging from 1.1 micrometers to 22 micrometers and a length ranging from 4 micrometers to 230 micrometers. It is from 0.005 microns to 1 micron.
  • An avalanche photodiode and a method for fabricating the same provide a layer of a SiGe optical buffer layer having an appropriate thickness between the Si layer and the Ge layer, and controlling the Ge composition in the SiGe to be less than or equal to 20%. Not only the lattice mismatch between the Si layer and the Ge layer is significantly reduced, but also the dark current of the silicon germanium avalanche photodiode is greatly reduced, and the quantum efficiency, gain bandwidth product and other properties of the silicon germanium avalanche photodiode are hardly affected. . At the same time, the evanescent coupling structure is used to avoid the problem of device rate drop caused by the thicker S i G e buffer layer using the common vertical front incident light coupling method.
  • FIG. 1 is a schematic structural view of an avalanche photodiode according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of an avalanche photodiode according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram of manufacturing an avalanche according to an embodiment of the present invention. Flow chart of the photodiode method. detailed description
  • FIG. 1 is a schematic structural view of an avalanche photodiode, wherein the z-axis is the optical wave transmission direction, the Y-axis is the device height direction, and the X-axis is the device width direction
  • FIG. 2 is an avalanche photoelectric Schematic diagram of the cross-sectional structure of the diode, as shown in FIG. 1 and FIG. 2, the avalanche photodiode includes:
  • Insulator Capsule Germanium-On-Insulator, GeOI
  • a (Silicon, Si) substrate layer 14 a silicon oxide (silicon Oxygen, Si0 2 ) oxide layer 71 and a germanium (Gemanium, Ge) layer 32;
  • the GeOI substrate is provided with an intrinsic-Germanium (I-Ge) absorption layer 31 for absorbing optical signals to generate photo-generated carriers;
  • I-Ge intrinsic-Germanium
  • a second p-type silicon germanium SiGe layer 24 is disposed on the I-Ge absorber layer 31, and a first p-type germanium silicon SiGe layer 23 is disposed on the second p-type germanium silicon SiGe layer 24.
  • the ⁇ Ge content in the first p-type SiGe layer 23 and the second p-type SiGe layer 24 is less than or equal to 20%;
  • a first silicon oxide SiO 2 oxide layer 72 is further disposed on the GeOI substrate, and a second silicon dioxide SiO 2 oxide layer 73 is disposed on the first silicon oxide SiO 2 oxide layer 72;
  • the first silicon germanium SiGe layer 21 and the second germanium silicon SiGe layer 22 are disposed on the silicon oxide SiO 2 oxide layer 72, wherein the germanium SiGeGe layer has a germanium Ge content of 20% or less;
  • the second silicon dioxide SiO 2 oxide layer 73 and the first silicon germanium SiGe layer 21 are further provided with a first Taper type silicon Si waveguide layer 11 and a second Taper type silicon Si waveguide layer. 12;
  • the second SiGe layer 22 and the first p-type SiGe layer 23 are provided with a negative n-type heavily doped silicon Si multiplication layer 13;
  • a cathode electrode 62 is disposed on the n-type heavily doped silicon Si multiplication layer 13;
  • An anode electrode 61 is disposed on the GeOI substrate
  • the first taper-type silicon waveguide layer 1 1 , the second taper-type silicon waveguide layer 12 , the first silicon germanium SiGe layer 21 , and the second silicon germanium SiGe layer 22 form an evanescent coupling structure
  • the first silicon germanium SiGe layer 21, the second germanium silicon SiGe layer 22, the first germanium silicon SiGe layer 23 and the second p-type germanium silicon SiGe layer 24 form a Taper type structure
  • the -Ge absorber layer 31 forms an evanescent coupling structure.
  • a first p-type SiGe layer 23 is used for the charge layer, the light buffer layer, and the light matching layer; and a second p-type SiGe layer 24 is used for the light buffer layer and the light matching layer.
  • the first p-type SiGe layer 23 and the second p-type SiGe layer 24 are used to propagate optical signals in the first taper waveguide type SiGe layer 21 and the second taper waveguide type SiGe layer 22, and simultaneously with the intrinsic Ge absorber layer 3 1 forming an evanescent coupling structure, coupling an optical signal into the intrinsic Ge absorption layer 3 1 , wherein the first Taper waveguide type SiGe layer 21 and the second Taper waveguide type SiGe layer 22 function as a light matching layer and an optical buffer The role of the layer;
  • first Taper-type Si waveguide layer 1 1 and the second Taper-type Si waveguide layer 12 are used for butt coupling with the optical fiber and as an optical active region, receiving the incident light signal, and the first Taper waveguide type SiGe layer 21 and the second Taper waveguide type SiGe layer 22 form an evanescent coupling structure, coupling the incident optical signal into the first Taper waveguide type SiGe layer 21 and the second Taper waveguide type SiGe layer 22;
  • a n-type heavily doped Si multiplication layer 13 for generating a region of impact ionization effect and multiplication effect
  • the first p-type SiGe optical buffer layer 23 and the second p-type SiGe optical buffer layer 24 The total thickness is different from the total thickness of the first Taper waveguide type SiGe optical buffer layer 21 and the second Taper waveguide type SiGe optical buffer layer 22, respectively matching the thickness of the intrinsic Ge absorption layer 31 and the first Taper type Si
  • the thickness of the waveguide layer 11 and the second Taper-type Si waveguide layer 12 are optimized to optimize coupling efficiency and quantum efficiency.
  • the first Taper type Si is reduced from 1.9 ⁇ 48 ⁇ 2-50 0.07-35 Si waveguide layer 11 to
  • the upper layer 14 of the insulator is Si
  • the layer ⁇ ⁇ ⁇ GeOI substrate layer 72 is Si0 2
  • Si0 2 the layer ⁇ ⁇ ⁇ GeOI substrate layer 72
  • 71 and 32 layers 32 are Ge.
  • a layer of appropriate thickness is added between the Si layer and the Ge layer.
  • the SiGe optical buffer layer controls the Ge composition in SiGe to 20% or less, which not only significantly reduces the lattice mismatch between the Si layer and the Ge layer, but also greatly reduces the silicon avalanche.
  • the evanescent coupling structure is used to avoid the problem of device rate drop caused by the thick SiGe buffer layer, which is commonly used for vertical vertical incident light coupling.
  • FIG. 3 is a schematic diagram of a method of fabricating an avalanche photodiode, as shown in FIG.
  • S301 epitaxially growing the intrinsic germanium I-Ge absorber layer 31 on the germanium on the insulator; optionally, the insulator is on the silicon Si substrate layer 14, the first silicon dioxide SiO 2 oxide layer 71, and the germanium Ge layer 32 composition; S302: growing a second p-type germanium-silicon SiGe layer 24 on the intrinsic germanium I-Ge absorber layer 31;
  • S304 growing a Taper waveguide type first silicon germanium SiGe layer 21, a second germanium silicon SiGe layer 22, and a second p-type germanium silicon SiGe layer 24 on the second silicon dioxide SiO 2 oxide layer 72. a p-type silicon germanium SiGe layer 23;
  • S308 growing a first Taper-type Si waveguide layer 11 and a second Taper on the third silicon dioxide SiO 2 oxide layer 73 and the Taper waveguide type first silicon germanium SiGe layer 21 and the second silicon germanium SiGe layer 22.
  • Ge content is less than or equal to
  • the upper layer 14 of the insulator is Si
  • the layer ⁇ ⁇ ⁇ GeOI substrate layer 72 is Si0 2 .
  • a method for manufacturing an avalanche photodiode provided in this embodiment in the Si layer and A layer of SiGex light buffer layer/light matching layer with appropriate thickness is added between the Ge layers, and the Ge composition in SiGe is controlled to be less than or equal to 20%, which not only significantly reduces the lattice mismatch between the Si layer and the Ge layer. , greatly reduces the dark current of the silicon germanium avalanche photodiode, and has little effect on the quantum efficiency, gain bandwidth product and other properties of the silicon germanium avalanche photodiode.
  • the evanescent coupling structure is used, which avoids the problem of device rate drop caused by the thick SiGe buffer layer, which is commonly used for vertical vertical incident light coupling.

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Abstract

一种雪崩光电二极管及其制造方法，涉及通信领域，能够解决现有雪崩光电二极管暗电流较大的问题，该雪崩光电二极管包括：绝缘体上锗GeOI衬底，本征锗I－Ge吸收层（31），用于吸收光信号，产生光生载流子；第一p型锗硅SiGe层（23）、第二p型锗硅SiGe层（24），第一锗硅SiGe层（21）、第二锗硅SiGe层（22），其中，锗硅SiGe层中Si的含量小于等于20%；第一二氧化硅SiO2氧化层（72），第二二氧化硅SiO2氧化层（73）；第一Taper型硅Si波导层（11）、第二Taper型硅Si波导层（12）；n型重掺杂Si倍增层（13）；阳极电极（61）和阴极电极（62）。

Description

一种雪崩光电二极管及其制造方法
技术领域
本发明涉及通信领域， 尤其涉及一种雪崩光电二极管及其制造方法。 背景技术
随着 10G-PON(10G-Passive Optical Network,吉比特无源光网络）的逐 渐商用化以及下一代 PON ( Passive Optical Network , 无源光网络）技术的 逐渐成熟， 高速光模块对高响应度 （也可称为高灵敏度） 、 高带宽光电探 测器的需求日益迫切。 虽然高速 PIN ( Positive-Intrinsic-Negative , 本征正 反） 探测器可达到很高的速率， 并且成本相对较低， 但其响应度也较低， 难以满足高速 ΡΟΝ网络对灵敏度和功率预算的要求。 而 APD ( Avalanche Photo Detector, 雪崩光电二极管） 因倍增效应可达到 艮高的响应度， 故成 为高速光模块的首选。
目前， l OGbps APD成本较高， 而且 APD的暗电流较大， 限制 了其灵敏度。
发明内容
本发明的实施例提供一种雪崩光电二极管及其制造方法， 能够 解决现有技术中 APD暗电流较大， 成本较高的问题。
为达到上述目 的， 本发明的实施例釆用如下技术方案：
第一方面， 一种雪崩光电二极管， 包括：
绝缘体上锗 GeOI衬底；
所述 GeOI衬底上设有本征锗 I-Ge吸收层（ 3 1 ) , 用于吸收光信 号， 产生光生载流子；
所述 I-Ge吸收层（ 31 )上设有第二正极 p型锗硅 SiGe层（ 24 ) , 所述第二 p型锗硅 SiGe层（ 24 )上设有第一 p型锗硅 SiGe层（ 23 ) , 其中， 所述第一 p型 SiGe层 （ 23 ) 和第二 p型 SiGe层 （ 24 ) 中的 锗 Ge含量小于等于 20%;
所述 GeOI衬底上还设有第一二氧化硅 Si02氧化层（ 72 ) , 所述 第一二氧化硅 Si02氧化层 （ 72 ) 上设有第二二氧化硅 Si02氧化层 所述第一二氧化硅 Si02氧化层 ( 72) 上设有第一锗硅 SiGe层
( 21 )、 第二锗硅 SiGe层 （ 22 ), 其中， 所述锗硅 SiGe层中的锗 Ge 含量小于等于 20%;
所述第二二氧化硅 Si02氧化层 ( 73 )和第一锗硅 SiGe层（ 21 )、 上还设有第一尖细 Taper型硅 Si波导层 （ 11 )、 第二 Taper型硅 Si 波导层 （ 12);
所述第二 SiGe层 （ 22 ) 和第一 p型 SiGe层 （ 23 ) 上设有负极 n型重掺杂硅 Si倍增层 （ 13 );
所述 n型重掺杂硅 Si倍增层 （ 13 ) 上设有阴极电极 （ 62 ); 所述 GeOI衬底上设有阳极电极 （ 61 );
其中， 所述第一 Taper型硅波导层 （ 11 )、 所述第二 Taper型硅 波导层 ( 12)、 所述第一锗硅 SiGe层 （ 21 ) 和所述第二锗硅 SiGe层
( 22) 形成逝波耦合结构；
所述第一锗硅 SiGe层 （ 21 )、 所述第二锗硅 SiGe层 （ 22)、 所 述第一 p型锗硅 SiGe层 （ 23 ) 和所述第二 p型锗硅 SiGe层 （ 24 ) 形成 Taper型结构；
所述第一锗硅 SiGe层 （ 21 )、 所述第二锗硅 SiGe层 （ 22)、 所 述第一 p型锗硅 SiGe层 ( 23 )、 所述第二 p型锗硅 SiGe层 （ 24 ) 与 所述本征锗 I-Ge吸收层 （ 31 ) 形成逝波耦合结构。
在第一方面的第一种可能的实现方式中， 所述第一锗硅 SiGe 层 （ 21 )、 所述第二锗硅 SiGe层 （ 22) 的厚度之和与所述第一 p型 锗硅 SiGe层 （ 23 )、 所述第二 p型锗硅 SiGe层 （ 24 ) 的厚度之和不 同。
在第一方面的第二种可能的实现方式中， 所述第一锗硅 SiGe 层 （ 21 ) 的宽度范围为 1.4微米至 30微米， 长度范围为 10微米至 500微米， 厚度为 0.02微米至 2.7微米。
在第一方面的第三种可能的实现方式中， 所述第二锗硅 SiGe 层 （ 22 ) 的宽度范围由 1.4微米至 30微米逐渐递减为 1微米至 20 微米， 长度范围为 1微米至 20微米， 厚度范围为 0.02微米至 2.7微 米。
在第一方面的第四种可能的实现方式中， 所述第一 ρ型锗硅 SiGe层 （ 23 ) 的宽度范围为 1微米至 20微米， 长度范围为 4微米 至 230微米， 厚度范围为 0.02微米至 2.7微米。
在第一方面的第五种可能的实现方式中， 所述第二 p型锗硅 SiGe层 （ 24 ) 的宽度范围为 1 .1微米至 22微米， 长度范围为 4微米 至 230微米， 厚度范围为 0.005微米至 1微米。
第二方面， 一种制造雪崩光电二极管的方法， 包括：
在绝缘体上锗 GeOI衬底外延生长本征锗 I-Ge吸收层 （ 31 ); 在所述本征锗 I-Ge吸收层（ 31 )上生长第二正极 p型锗硅 SiGe 层 （ 24 );
在所述绝缘体上锗 GeOI上生长第二二氧化硅 Si02氧化层（ 72 ); 在所述第二二氧化硅 Si02氧化层 （ 72 ) 上生长尖细 Taper波导 型第一锗硅 SiGe层 （ 21 )、 第二锗硅 SiGe层 （ 22 );
在所述第二 p型锗硅 SiGe层 （ 24 ) 上生长第一 p型锗硅 SiGe 层 （ 23 );
对所述第一 p型锗硅 SiGe层（ 23 )和第二 p型锗硅 SiGe层（ 24 ) 进行 p型离子注入， 形成 p型锗硅光匹配层；
在所述第二二氧化硅 Si02氧化层 ( 72 ) 上生长第三二氧化硅 Si02氧化层 ( 73 );
在所述第二锗硅 SiGe层（ 22 )和所述第一 p型锗硅 SiGe层（ 23 ) 上生长负极 n型重掺杂 Si倍增层 （ 13 );
在所述第三二氧化硅 Si02氧化层 ( 73 ) 和所述 Taper波导型第 一锗硅 SiGe层 （ 21 )、 第二锗硅 SiGe层 （ 22 ) 上生长第一 Taper型 Si波导层 （ 1 1 ) 和第二 Taper型 Si波导层 （ 12 );
在所述绝缘体上锗 GeOI衬底上上生长阳极电极 （ 61 );
在所述 n型重掺杂 Si倍增层 （ 13 ) 上生长阴极电极 （ 62 )。
在第二方面的第一种可能的实现方式中， 所述第一锗硅 SiGe 层 （ 21 ) 的宽度范围为 1 .4微米至 30微米， 长度范围为 10微米至 500微米， 厚度为 0.02微米至 2.7微米。
在第二方面的第二种可能的实现方式中， 所述第二锗硅 SiGe 层 （ 22 ) 的宽度范围由 1 .4微米至 30微米逐渐递减为 1微米至 20 微米， 长度范围为 1微米至 20微米， 厚度范围为 0.02微米至 2.7微 米。
在第二方面的第三种可能的实现方式中， 所述第一 p型锗硅 SiGe层 （ 23 ) 的宽度范围为 1微米至 20微米， 长度范围为 4微米 至 230微米， 厚度范围为 0.02微米至 2.7微米。
在第二方面的第四种可能的实现方式中， 所述第二 p型锗硅 SiGe层 （ 24 ) 的宽度范围为 1 .1微米至 22微米， 长度范围为 4微米 至 230微米， 厚度范围为 0.005微米至 1微米。
本实施例提供的一种雪崩光电二极管及其制造方法， 通过在 Si 层和 Ge层间加入了一层厚度适当的 SiGe光緩冲层，并将 SiGe中的 Ge组成控制在小于等于 20% , 不仅明显消减了 Si层和 Ge层间的晶 格失配问题， 大大降低了锗硅雪崩光电二极管的暗电流， 并且对锗 硅雪崩光电二极管的量子效率、 增益带宽积等其它性能几乎不造成 影响。 同时釆用逝波耦合结构， 避免了釆用常见的垂直正面入射光 耦合方式而需要较厚的 S i G e緩冲层所引起的器件速率下降问题。 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案， 下面将对 实施例描述中所需要使用的附图作简单地介绍， 显而易见地， 下面描述中 的附图仅仅是本发明的一些实施例， 对于本领域普通技术人员来讲， 在不 付出创造性劳动的前提下， 还可以根据这些附图获得其他的附图。
图 1为本发明的实施例提供的一种雪崩光电二极管结构示意图； 图 2为本发明的实施例提供的一种雪崩光电二极管截面示意图； 图 3为本发明的实施例提供的一种制造雪崩光电二极管的方法流程 图。 具体实施方式
下面将结合本发明实施例中的附图， 对本发明实施例中的技术方案进 行清楚、 完整地描述， 显然， 所描述的实施例仅仅是本发明一部分实施例， 而不是全部的实施例。 基于本发明中的实施例， 本领域普通技术人员在没 有做出创造性劳动前提下所获得的所有其他实施例， 都属于本发明保护的 范围。
实施例一、
本发明的实施例提供一种雪崩光电二极管， 图 1为雪崩光电二极管的 结构示意图， 其中， z轴为光波传输方向， Y轴为器件高度方向， X轴为器 件宽度方向， 图 2为雪崩光电二极管的截面结构示意图， 参照图 1、 图 2 所示， 所述雪崩光电二极管包括：
绝缘体上锗 （ Germanium-On-Insulator, GeOI ) , 由石圭
( Silicon, Si ) 衬底层 14、 二氧化硅 （ Silicon Oxygen, Si02 ) 氧 化层 71和锗 （ Gemanium, Ge ) 层 32组成；
所述 GeOI衬底上设有本征锗 ( Intrinsic-Germanium, I-Ge ) 吸 收层 31, 用于吸收光信号， 产生光生载流子；
所述 I-Ge吸收层 31上设有第二 p型（ Positive,正极）锗硅 SiGe 层 24, 所述第二 p型锗硅 SiGe层 24上设有第一 p型锗硅 SiGe层 23, 其中， 所述第一 p型 SiGe层 23和第二 p型 SiGe层 24 中的锗 Ge含量小于等于 20%;
所述 GeOI衬底上还设有第一二氧化硅 Si02氧化层 72, 所述第 一二氧化硅 Si02氧化层 72上设有第二二氧化硅 Si02氧化层 73; 所述第一二氧化硅 Si02氧化层 72上设有第一锗硅 SiGe层 21、 第二锗硅 SiGe层 22, 其中， 所述锗硅 SiGe层中的锗 Ge含量小于 等于 20%;
所述第二二氧化硅 Si02氧化层 73和第一锗硅 SiGe层 21、上还 设有第一 Taper ( 中文为尖细的） 型硅 Si波导层 11、 第二 Taper型 硅 Si波导层 12; 所述第二 SiGe层 22和第一 p型 SiGe层 23上设有负极 n型重 掺杂硅 Si倍增层 13 ;
所述 n型重掺杂硅 Si倍增层 13上设有阴极电极 62 ;
所述 GeOI衬底上设有阳极电极 61 ;
其中， 所述第一 Taper型硅波导层 1 1、 所述第二 Taper型硅波 导层 12、 所述第一锗硅 SiGe层 21和所述第二锗硅 SiGe层 22形成 逝波耦合结构；
所述第一锗硅 SiGe层 21、 所述第二锗硅 SiGe层 22、 所述第一 型锗硅 SiGe层 23和所述第二 p型锗硅 SiGe层 24形成 Taper型结 构；
所述第一锗硅 SiGe层 21、 所述第二锗硅 SiGe层 22、 所述第一 p型锗硅 SiGe层 23、所述第二 p型锗硅 SiGe层 24与所述本征锗 I-Ge 吸收层 3 1形成逝波耦合结构。
进一步地， 第一 p型 SiGe层 23 , 用于电荷层、 光緩冲层、 光 匹配层； 第二 p型 SiGe层 24 , 用于光緩冲层、 光匹配层。
所述第一 p型 SiGe层 23和第二 p型 SiGe层 24用于传播第一 Taper波导型 SiGe层 21和第二 Taper波导型 SiGe层 22中的光信号， 并同时与本征 Ge吸收层 3 1形成逝波耦合结构， 将光信号耦合到本 征 Ge吸收层 3 1 中，其中，第一 Taper波导型 SiGe层 21和第二 Taper 波导型 SiGe层 22起到了光匹配层、 光緩冲层的作用；
进一步地，第一 Taper型 Si波导层 1 1和第二 Taper型 Si波导层 12 , 用于与光纤进行对接耦合和作为光有源区， 接收入射光信号， 以及与第一 Taper波导型 SiGe层 21和第二 Taper波导型 SiGe层 22 形成逝波耦合结构， 将入射光信号耦合到第一 Taper波导型 SiGe层 21和第二 Taper波导型 SiGe层 22中；
n型重掺杂 Si倍增层 13 , 用于产生碰撞电离效应和倍增效应的 区域；
其中，第一 p型 SiGe光緩冲层 23和第二 p型 SiGe光緩冲层 24 的总厚度与第一 Taper波导型 SiGe光緩冲层 21和第二 Taper波导型 SiGe光緩冲层 22的总厚度是不同的， 分别匹配本征 Ge吸收层 31 的厚度和第一 Taper型 Si波导层 11和第二 Taper型 Si波导层 12的 厚度， 以最优化耦合效率和量子效率。
进一步地， 本发明实施提供的 APD的结构参数如表 1所示： 雪崩光电二极管的结构参数
结构层名 材料 宽度 ( μπι ) 长度 厚度（μπι)
( μπι ) 第一 Taper型 Si 从 1.9~48μπι 2-50 0.07-35 Si波导层 11 递减至
1.2~28μπι 第二 Taper型 Si 1.2-28 10-500 0.07-35 Si波导层 12 n型重掺杂 Si Si 1-20 5-250 0.05-2.5 倍增层倍 13 第一锗硅 SiGe SiGe合金， 1.4-30 10-500 0.02-2.7 层 21 Ge的含量小
于等于 20% 第二锗硅 SiGe SiGe合金， 从 1.4~30μπι 1-20 0.02-2.7 层 22 Ge的含量小 递减至
于等于 20% 1~20μπι 第一 p型锗硅 p型 SiGe合 1-20 4-230 0.02-2.7 SiGe层 23 金， Ge的含 量小于等于
20% 第二 p型锗硅 p型 SiGe合 1 .1 -22 4-230 SiGe层 24 金， Ge的含 量小于等于
20% 本征锗 I-Ge吸 I-Ge 1 .1 -22 4-230 0.04-4 收层 3 1 绝缘体上锗 层 14为 Si、层 \ \ \ GeOI衬底层 72为 Si02、
14、 71和 32 层 32为 Ge 本发明实施例通过在 Si层和 Ge层间加入了一层厚度适当的
SiGe光緩冲层， 并将 SiGe中的 Ge组成控制在小于等于 20% , 不仅 明显消减了 Si层和 Ge层间的晶格失配问题， 大大降低 o了锗硅雪崩 o
o 光电二极管的暗电流， 并且对锗硅雪崩光电二极管的量子效率、 增
1 益带宽积等其它性能几乎不造成影响。 同时釆用逝波耦合结构， 避 免了釆用常见的垂直正面入射光耦合方式而需要较厚的 SiGe緩冲层 所引起的器件速率下降问题。
实施例二、
基于上述图 1对应的实施例， 本发明的另一实施例提供一种制 造雪崩光电二极管的方法， 图 3是制造雪崩光电二极管的方法流程 示意图， 如图 3所示：
S301 :在绝缘体上锗 GeOI衬底外延生长本征锗 I-Ge吸收层 31 ; 可选地，所述绝缘体上锗由硅 Si衬底层 14、第一二氧化硅 Si02 氧化层 71和锗 Ge层 32组成； S302: 在所述本征锗 I-Ge吸收层 31上生长第二 p型锗硅 SiGe 层 24;
S303: 在所述绝缘体上锗 GeOI上生长第二二氧化硅 Si02氧化 层 72;
S304: 在所述第二二氧化硅 Si02氧化层 72上生长 Taper波导 型第一锗硅 SiGe层 21、 第二锗硅 SiGe层 22以及在所述第二 p型 锗硅 SiGe层 24上第一 p型锗硅 SiGe层 23;
S305: 对所述第一 p型锗硅 SiGe层 23和第二 p型锗硅 SiGe 层 24进行 p型离子注入， 形成 p型锗硅光匹配层；
S306: 在所述第二二氧化硅 Si02氧化层 72上生长第三二氧化 硅 Si02氧化层 73;
S307: 在所述第二锗硅 SiGe层 22和所述第一 p型锗硅 SiGe 层 23上生长 n型重掺杂硅 Si倍增层 13;
S308: 在所述第三二氧化硅 Si02氧化层 73和所述 Taper波导 型第一锗硅 SiGe层 21、 第二锗硅 SiGe层 22上生长第一 Taper型 Si波导层 11和第二 Taper型 Si波导层 12;
S309: 在所述绝缘体上锗 GeOI衬底上生长阳极电极 61 以及在 所述 n型重掺杂 Si倍增层 13上阴极电极 62。
其中， 雪崩光电二极管的结构参数如表 1 所示：
表 1 雪崩光电二极管的结构参数
Figure imgf000010_0001
n型重掺杂 Si 1-20 5-250 0.05-2.5 Si倍增层倍
13 第一锗硅 SiGe合金， 1.4-30 10-500 0.02-2.7 SiGe层 21 Ge的含量小
于等于 20% 第二锗硅 SiGe合金， 从 1.4~30μπι 1-20 0.02-2.7 SiGe层 22 Ge的含量小 递减至
于等于 20% 1~20μπι 第一 p型锗 p型 SiGe合 1-20 4-230 0.02-2.7 硅 SiGe层 23 金， Ge的含 量小于等于
20%
ο
ο 第二 p型锗 p型 SiGe合 1.1-22 4-230 ο
1 硅 SiGe层 24 金， Ge的含 量小于等于
20% 本征锗 I-Ge I-Ge 1.1-22 4-230 0.04-4 吸收层 31 绝缘体上锗 层 14为 Si、层 \ \ \ GeOI衬底层 72为 Si02、
14、 71和 32 层 32为 Ge 本实施例提供的一种制造雪崩光电二极管的方法， 在 Si层和 Ge层间加入了一层厚度适当的 SiGex光緩冲层 /光匹配层，并将 SiGe 中的 Ge组成控制在小于等于 20% ,不仅明显消减了 Si层和 Ge层间 的晶格失配问题， 大大降低了锗硅雪崩光电二极管的暗电流， 并且 对锗硅雪崩光电二极管的量子效率、 增益带宽积等其它性能几乎不 造成影响。 同时釆用逝波耦合结构， 避免了釆用常见的垂直正面入 射光耦合方式而需要较厚的 SiGe緩冲层所引起的器件速率下降问 题。
以上所述， 仅为本发明的具体实施方式， 但本发明的保护范围 并不局限于此， 任何熟悉本技术领域的技术人员在本发明揭露的技 术范围内， 可轻易想到变化或替换， 都应涵盖在本发明的保护范围 之内。 因此， 本发明的保护范围应所述以权利要求的保护范围为准。

Claims

权 利 要 求 书
1、 一种雪崩光电二极管， 其特征在于， 包括：
绝缘体上锗 GeOI衬底；
所述 GeOI衬底上设有本征锗 I-Ge吸收层 （ 31 ), 用于吸收光信 号， 产生光生载流子；
所述 I-Ge吸收层 （ 31 ) 上设有第二正极 p型锗硅 SiGe层 （ 24 ), 所述第二 p型锗硅 SiGe层 （ 24 ) 上设有第一 p型锗硅 SiGe层 （ 23 ), 其中， 所述第一 p型 SiGe层 （ 23 ) 和第二 p型 SiGe层 （ 24 ) 中的锗 Ge含量小于等于 20%;
所述 GeOI衬底上还设有第一二氧化硅 Si02氧化层 （ 72 ), 所述 第一二氧化硅 Si02氧化层（ 72 )上设有第二二氧化硅 Si02氧化层（ 73 ); 所述第一二氧化硅 Si02氧化层 （ 72 ) 上设有第一锗硅 SiGe层 ( 21 )、 第二锗硅 SiGe层 （ 22 ), 其中， 所述锗硅 SiGe层中的锗 Ge 含量小于等于 20%;
所述第二二氧化硅 Si02氧化层 ( 73 ) 和第一锗硅 SiGe层 （ 21 )、 上还设有第一尖细 Taper型硅 Si波导层 （ 11 )、 第二 Taper型硅 Si波 导层 （ 12 );
所述第二 SiGe层 （ 22 ) 和第一 p型 SiGe层 （ 23 ) 上设有负极 n 型重掺杂硅 Si倍增层 ( 13 );
所述 n型重掺杂硅 Si倍增层 （ 13 ) 上设有阴极电极 （ 62 );
所述 GeOI衬底上设有阳极电极 （ 61 );
其中， 所述第一 Taper型硅波导层（ 11 )、 所述第二 Taper型硅波 导层（ 12)、 所述第一锗硅 SiGe层（ 21 )和所述第二锗硅 SiGe层（ 22 ) 形成逝波耦合结构；
所述第一锗硅 SiGe层 （ 21 )、 所述第二锗硅 SiGe层 ( 22 )、 所述 第一 p型锗硅 SiGe层 （ 23 ) 和所述第二 p型锗硅 SiGe层 （ 24 ) 形成 Taper型结构；
所述第一锗硅 SiGe层 （ 21 )、 所述第二锗硅 SiGe层 （ 22)、 所述 第一 p型锗硅 SiGe层 ( 23 )、 所述第二 p型锗硅 SiGe层 ( 24 ) 与所述 本征锗 I-Ge吸收层 （ 31 ) 形成逝波耦合结构。
2、 根据权利要求 1所述的雪崩光电二极管， 其特征在于， 所述 第一锗硅 SiGe层 （ 21 )、 所述第二锗硅 SiGe层 （ 22 ) 的厚度之和与 所述第一 p型锗硅 SiGe层 （ 23)、 所述第二 p型锗硅 SiGe层 （ 24 ) 的厚度之和不同。
3、 根据权利要求 1或 2所述的雪崩光电二极管， 其特征在于， 所述第一锗硅 SiGe层 （ 21 ) 的宽度范围为 1.4微米至 30微米， 长度 范围为 10微米至 500微米， 厚度为 0.02微米至 2.7微米。
4、 根据权利要求 1~3任意一项所述的雪崩光电二极管， 其特征 在于， 所述第二锗硅 SiGe层 （ 22 ) 的宽度范围由 1.4微米至 30微米 逐渐递减为 1微米至 20微米， 长度范围为 1微米至 20微米， 厚度范 围为 0.02微米至 2.7微米。
5、 根据权利要求 1~4任意一项所述的雪崩光电二极管， 其特征 在于， 所述第一 p型锗硅 SiGe层 （ 23 ) 的宽度范围为 1微米至 20微 米，长度范围为 4微米至 230微米，厚度范围为 0.02微米至 2.7微米。
6、 根据权利要求 1~5任意一项所述的雪崩光电二极管， 其特征 在于， 所述第二 p型锗硅 SiGe层 （ 24 ) 的宽度范围为 1.1微米至 22 微米， 长度范围为 4微米至 230微米， 厚度范围为 0.005微米至 1微 米。
7、 一种制造雪崩光电二极管的方法， 其特征在于， 包括： 在绝缘体上锗 GeOI衬底外延生长本征锗 I-Ge吸收层 （ 31 ); 在所述本征锗 I-Ge吸收层 （ 31 ) 上生长第二正极 p型锗硅 SiGe 层 （ 24 );
在所述绝缘体上锗 GeOI上生长第二二氧化硅 Si02氧化层（ 72 ); 在所述第二二氧化硅 Si02氧化层 （ 72 ) 上生长尖细 Taper波导 型第一锗硅 SiGe层 （ 21 )、 第二锗硅 SiGe层 （ 22 );
在所述第二 p型锗硅 SiGe层 （ 24 ) 上生长第一 p型锗硅 SiGe 层 （ 23 );
对所述第一 p型锗硅 SiGe层（ 23 )和第二 p型锗硅 SiGe层（ 24 ) 进行 p型离子注入， 形成 p型锗硅光匹配层；
在所述第二二氧化硅 Si02氧化层（ 72 )上生长第三二氧化硅 Si02 氧化层 （ 73 );
在所述第二锗硅 SiGe层（ 22 )和所述第一 p型锗硅 SiGe层（ 23 ) 上生长负极 n型重掺杂 Si倍增层 ( 13 );
在所述第三二氧化硅 Si02氧化层 （ 73 ) 和所述 Taper波导型第 一锗硅 SiGe层 （ 21 )、 第二锗硅 SiGe层 （ 22 ) 上生长第一 Taper型 Si波导层 （ 11 ) 和第二 Taper型 Si波导层 （ 12 );
在所述绝缘体上锗 GeOI衬底上生长阳极电极 （ 61 );
在所述 n型重掺杂 Si倍增层 （ 13 ) 上生长阴极电极 （ 62 )。
8、 根据权利要求 7任意一项所述的雪崩光电二极管， 其特征在 于， 所述第一锗硅 SiGe层 （ 21 ) 的宽度范围为 1.4微米至 30微米， 长度范围为 10微米至 500微米， 厚度为 0.02微米至 2.7微米。
9、 根据权利要求 7或 8所述的雪崩光电二极管， 其特征在于， 所述第二锗硅 SiGe层 （ 22 ) 的宽度范围由 1.4微米至 30微米逐渐递 减为 1微米至 20微米， 长度范围为 1微米至 20微米， 厚度范围为 0.02微米至 2.7微米。
10、 根据权利要求 7~9任意一项所述的雪崩光电二极管， 其特征 在于， 所述第一 p型锗硅 SiGe层 （ 23 ) 的宽度范围为 1微米至 20微 米，长度范围为 4微米至 230微米，厚度范围为 0.02微米至 2.7微米。
11、 根据权利要求 7~10任意一项所述的雪崩光电二极管， 其特 征在于， 所述第二 p型锗硅 SiGe层 （ 24 ) 的宽度范围为 1.1微米至 22微米， 长度范围为 4微米至 230微米， 厚度范围为 0.005微米至 1 微米。
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