KR102059030B1 - 자외선 발광 소자 - Google Patents

자외선 발광 소자 Download PDF

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Publication number
KR102059030B1
KR102059030B1 KR1020120105933A KR20120105933A KR102059030B1 KR 102059030 B1 KR102059030 B1 KR 102059030B1 KR 1020120105933 A KR1020120105933 A KR 1020120105933A KR 20120105933 A KR20120105933 A KR 20120105933A KR 102059030 B1 KR102059030 B1 KR 102059030B1
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South Korea
Prior art keywords
light emitting
emitting device
layer
substrate
ultraviolet light
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KR1020120105933A
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English (en)
Korean (ko)
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KR20140039594A (ko
Inventor
이광칠
박중서
이태림
최운경
김경훈
박해진
윤환희
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엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120105933A priority Critical patent/KR102059030B1/ko
Priority to US13/911,853 priority patent/US9029895B2/en
Priority to JP2013193661A priority patent/JP6324690B2/ja
Priority to EP13185571.0A priority patent/EP2711996B1/en
Priority to CN201310439080.6A priority patent/CN103681994B/zh
Publication of KR20140039594A publication Critical patent/KR20140039594A/ko
Priority to US14/678,104 priority patent/US9240533B2/en
Application granted granted Critical
Publication of KR102059030B1 publication Critical patent/KR102059030B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
KR1020120105933A 2012-09-24 2012-09-24 자외선 발광 소자 Active KR102059030B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020120105933A KR102059030B1 (ko) 2012-09-24 2012-09-24 자외선 발광 소자
US13/911,853 US9029895B2 (en) 2012-09-24 2013-06-06 Ultraviolet light emitting device
JP2013193661A JP6324690B2 (ja) 2012-09-24 2013-09-19 紫外線発光素子
EP13185571.0A EP2711996B1 (en) 2012-09-24 2013-09-23 Ultraviolet light emitting device
CN201310439080.6A CN103681994B (zh) 2012-09-24 2013-09-24 发光装置
US14/678,104 US9240533B2 (en) 2012-09-24 2015-04-03 Ultraviolet light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120105933A KR102059030B1 (ko) 2012-09-24 2012-09-24 자외선 발광 소자

Publications (2)

Publication Number Publication Date
KR20140039594A KR20140039594A (ko) 2014-04-02
KR102059030B1 true KR102059030B1 (ko) 2019-12-24

Family

ID=49223669

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120105933A Active KR102059030B1 (ko) 2012-09-24 2012-09-24 자외선 발광 소자

Country Status (5)

Country Link
US (2) US9029895B2 (https=)
EP (1) EP2711996B1 (https=)
JP (1) JP6324690B2 (https=)
KR (1) KR102059030B1 (https=)
CN (1) CN103681994B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022050530A1 (ko) * 2020-09-02 2022-03-10 삼성전자주식회사 약발광 영역을 포함하는 디스플레이 장치

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2733752B1 (en) 2011-07-12 2016-10-05 Marubun Corporation Light emitting element and method for manufacturing the same
US9412911B2 (en) 2013-07-09 2016-08-09 The Silanna Group Pty Ltd Optical tuning of light emitting semiconductor junctions
TWI540766B (zh) * 2013-07-10 2016-07-01 隆達電子股份有限公司 發光二極體封裝結構
CN105283968A (zh) 2013-07-17 2016-01-27 丸文株式会社 半导体发光元件及其制造方法
JP2015056652A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
JP5757512B1 (ja) * 2014-03-06 2015-07-29 丸文株式会社 深紫外ｌｅｄ及びその製造方法
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
CN106415854B (zh) 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
KR102318317B1 (ko) 2014-05-27 2021-10-28 실라나 유브이 테크놀로지스 피티이 리미티드 반도체 구조물과 초격자를 사용하는 진보된 전자 디바이스 구조
JP6817072B2 (ja) 2014-05-27 2021-01-20 シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドＳｉｌａｎｎａ Ｕｖ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｐｔｅ Ｌｔｄ 光電子デバイス
US9502614B2 (en) * 2014-06-04 2016-11-22 Formosa Epitaxy Incorporation Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
KR102170218B1 (ko) * 2014-08-05 2020-10-26 엘지이노텍 주식회사 발광소자 패키지
KR102236382B1 (ko) * 2014-09-26 2021-04-05 엘지디스플레이 주식회사 발광 다이오드 패키지 및 백라이트 유닛
JP5999800B1 (ja) 2015-01-16 2016-09-28 丸文株式会社 深紫外ｌｅｄ及びその製造方法
JP2016163015A (ja) * 2015-03-05 2016-09-05 旭化成株式会社 紫外線発光素子及びその製造方法
JP6521443B2 (ja) * 2015-06-29 2019-05-29 国立研究開発法人情報通信研究機構 深紫外光を放射する半導体発光素子、該半導体発光素子を備える発光モジュール、及び該半導体発光素子の製造方法
US10680134B2 (en) 2015-09-03 2020-06-09 Marubun Corporation Deep ultraviolet LED and method for manufacturing the same
US10418517B2 (en) 2016-02-23 2019-09-17 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
WO2017145026A1 (en) 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
US10054485B2 (en) 2016-03-17 2018-08-21 Raytheon Company UV LED-phosphor based hyperspectral calibrator
EP3249701B1 (en) 2016-03-30 2020-07-08 Marubun Corporation Deep ultraviolet led and production method therefor
JP6564348B2 (ja) * 2016-06-06 2019-08-21 日機装株式会社 深紫外発光素子
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
US11309454B2 (en) 2018-01-26 2022-04-19 Marubun Corporation Deep ultraviolet LED and method for producing the same
US10643964B2 (en) 2018-07-02 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for bonding a group III-V device to a substrate by stacked conductive bumps
US10622514B1 (en) 2018-10-15 2020-04-14 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
JP2020113584A (ja) * 2019-01-08 2020-07-27 豊田合成株式会社 発光素子の製造方法
RU2712326C1 (ru) * 2019-03-06 2020-01-28 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Способ получения поглощающего свч-энергию покрытия
JP7257247B2 (ja) * 2019-05-16 2023-04-13 スタンレー電気株式会社 発光装置
KR102809515B1 (ko) * 2019-05-22 2025-05-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
US11764328B2 (en) * 2019-08-13 2023-09-19 Epistar Corporation Light-emitting diode package having bump formed in wriggle shape
CN111129274A (zh) * 2019-12-31 2020-05-08 广东省半导体产业技术研究院 一种微led器件及阵列
US11747008B2 (en) * 2021-03-10 2023-09-05 Bolb Inc. Deep ultraviolet light source
CN114300603A (zh) * 2021-12-29 2022-04-08 惠州视维新技术有限公司 发光器件及其制备方法、灯板、背光模块以及显示装置
CN114730817B (zh) * 2021-12-31 2025-07-18 厦门三安光电有限公司 一种发光二极管及其发光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040012958A1 (en) * 2001-04-23 2004-01-22 Takuma Hashimoto Light emitting device comprising led chip

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5779924A (en) * 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
JP2907170B2 (ja) * 1996-12-28 1999-06-21 サンケン電気株式会社 半導体発光素子
JP3707279B2 (ja) * 1998-03-02 2005-10-19 松下電器産業株式会社 半導体発光装置
JP2002368263A (ja) * 2001-06-06 2002-12-20 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
EP1536487A4 (en) * 2002-05-28 2008-02-06 Matsushita Electric Works Ltd ELECTROLUMINESCENT ELEMENT, LIGHT EMITTING DEVICE AND SURFACE EMISSION LIGHTING DEVICE USING THE SAME
JP4329374B2 (ja) * 2002-07-29 2009-09-09 パナソニック電工株式会社 発光素子およびその製造方法
JP4238666B2 (ja) * 2003-07-17 2009-03-18 豊田合成株式会社 発光装置の製造方法
DE102004034166B4 (de) * 2003-07-17 2015-08-20 Toyoda Gosei Co., Ltd. Lichtemittierende Vorrichtung
JP2005302804A (ja) * 2004-04-07 2005-10-27 Toyoda Gosei Co Ltd 発光ダイオード及びその製造方法
JP2005209794A (ja) * 2004-01-21 2005-08-04 Koito Mfg Co Ltd 発光モジュール及び灯具
WO2006052834A2 (en) * 2004-11-05 2006-05-18 Optical Research Associates Methods for manipulating light extraction from a light
JP2006253298A (ja) * 2005-03-09 2006-09-21 Toshiba Corp 半導体発光素子及び半導体発光装置
US7196354B1 (en) * 2005-09-29 2007-03-27 Luminus Devices, Inc. Wavelength-converting light-emitting devices
JP5032043B2 (ja) * 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
JP2007281037A (ja) * 2006-04-03 2007-10-25 Dowa Holdings Co Ltd 半導体発光素子及びその製造方法
US7932534B2 (en) * 2009-06-09 2011-04-26 Sinmat, Inc. High light extraction efficiency solid state light sources
WO2012012010A2 (en) * 2010-04-30 2012-01-26 Trustees Of Boston University High efficiency ultraviolet light emitting diode with band structure potential fluctuations
KR20120092325A (ko) * 2011-02-11 2012-08-21 서울옵토디바이스주식회사 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040012958A1 (en) * 2001-04-23 2004-01-22 Takuma Hashimoto Light emitting device comprising led chip

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022050530A1 (ko) * 2020-09-02 2022-03-10 삼성전자주식회사 약발광 영역을 포함하는 디스플레이 장치
US12159963B2 (en) 2020-09-02 2024-12-03 Samsung Electronics Co., Ltd. Display apparatus including a low brightness area
US12477874B2 (en) 2020-09-02 2025-11-18 Samsung Electronics Co., Ltd. Display apparatus including a low brightness area

Also Published As

Publication number Publication date
US9240533B2 (en) 2016-01-19
EP2711996A3 (en) 2015-11-18
KR20140039594A (ko) 2014-04-02
US20140084317A1 (en) 2014-03-27
CN103681994A (zh) 2014-03-26
JP6324690B2 (ja) 2018-05-16
JP2014068010A (ja) 2014-04-17
EP2711996A2 (en) 2014-03-26
US20150214448A1 (en) 2015-07-30
US9029895B2 (en) 2015-05-12
CN103681994B (zh) 2019-04-26
EP2711996B1 (en) 2018-11-21

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