KR102055070B1 - 기판 건조 방법 및 기판 처리 장치 - Google Patents

기판 건조 방법 및 기판 처리 장치 Download PDF

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Publication number
KR102055070B1
KR102055070B1 KR1020180088661A KR20180088661A KR102055070B1 KR 102055070 B1 KR102055070 B1 KR 102055070B1 KR 1020180088661 A KR1020180088661 A KR 1020180088661A KR 20180088661 A KR20180088661 A KR 20180088661A KR 102055070 B1 KR102055070 B1 KR 102055070B1
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South Korea
Prior art keywords
vapor pressure
sublimation
substrate
high vapor
liquid
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Korean (ko)
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KR20190024677A (ko
Inventor
마나부 오쿠타니
노리유키 기쿠모토
나오히코 요시하라
히로시 아베
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가부시키가이샤 스크린 홀딩스
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
    • F26B5/10—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment the process involving freezing
    • H01L21/02046—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H01L21/67034—
    • H01L21/6715—
    • H01L21/68764—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
KR1020180088661A 2017-08-31 2018-07-30 기판 건조 방법 및 기판 처리 장치 Active KR102055070B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017167867A JP7010629B2 (ja) 2017-08-31 2017-08-31 基板乾燥方法および基板処理装置
JPJP-P-2017-167867 2017-08-31

Publications (2)

Publication Number Publication Date
KR20190024677A KR20190024677A (ko) 2019-03-08
KR102055070B1 true KR102055070B1 (ko) 2019-12-11

Family

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Family Applications (1)

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KR1020180088661A Active KR102055070B1 (ko) 2017-08-31 2018-07-30 기판 건조 방법 및 기판 처리 장치

Country Status (5)

Country Link
US (1) US10760852B2 (https=)
JP (1) JP7010629B2 (https=)
KR (1) KR102055070B1 (https=)
CN (1) CN109427623B (https=)
TW (1) TWI711068B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6966899B2 (ja) * 2017-08-31 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
CN111630636B (zh) * 2018-01-29 2024-03-22 东京毅力科创株式会社 基片干燥装置、基片干燥方法和存储介质
JP7393210B2 (ja) * 2019-06-28 2023-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN112146364A (zh) * 2020-09-16 2020-12-29 李文静 一种鸭绒脱水冷干燥设备

Citations (2)

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JP2017050575A (ja) * 2016-12-15 2017-03-09 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置
JP2017147273A (ja) * 2016-02-15 2017-08-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

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JP4841376B2 (ja) * 2006-02-07 2011-12-21 大日本スクリーン製造株式会社 基板処理装置
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20100258142A1 (en) 2009-04-14 2010-10-14 Mark Naoshi Kawaguchi Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
US8419964B2 (en) * 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
JP5373429B2 (ja) 2009-02-25 2013-12-18 大日本スクリーン製造株式会社 基板乾燥装置および基板乾燥方法
JP5647845B2 (ja) 2010-09-29 2015-01-07 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置及び基板乾燥方法
TWI480937B (zh) * 2011-01-06 2015-04-11 斯克林集團公司 基板處理方法及基板處理裝置
US9673037B2 (en) * 2011-05-31 2017-06-06 Law Research Corporation Substrate freeze dry apparatus and method
JP2013033817A (ja) 2011-08-01 2013-02-14 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013042094A (ja) 2011-08-19 2013-02-28 Central Glass Co Ltd ウェハの洗浄方法
CN103187340B (zh) * 2011-12-28 2016-08-03 斯克林集团公司 基板处理装置以及基板处理方法
JP5859888B2 (ja) 2012-03-26 2016-02-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR20130122503A (ko) 2012-04-30 2013-11-07 세메스 주식회사 기판 세정 장치 및 기판 세정 방법
CN103377971A (zh) 2012-04-30 2013-10-30 细美事有限公司 用于清洗基板的装置和方法
JP6022829B2 (ja) * 2012-07-03 2016-11-09 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板乾燥装置
JP6216188B2 (ja) 2013-09-04 2017-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置および基板乾燥方法
JP6259299B2 (ja) 2014-01-30 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6275578B2 (ja) * 2014-07-30 2018-02-07 株式会社東芝 処理装置、処理方法、および電子デバイスの製造方法
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JP6462462B2 (ja) 2015-04-01 2019-01-30 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6456793B2 (ja) 2015-08-11 2019-01-23 東京エレクトロン株式会社 基板処理装置および昇華性物質の析出防止方法
JP6591280B2 (ja) * 2015-12-16 2019-10-16 東芝メモリ株式会社 基板処理装置および基板処理方法

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JP2017050575A (ja) * 2016-12-15 2017-03-09 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置

Also Published As

Publication number Publication date
TWI711068B (zh) 2020-11-21
JP2019046943A (ja) 2019-03-22
KR20190024677A (ko) 2019-03-08
US10760852B2 (en) 2020-09-01
CN109427623B (zh) 2022-03-15
US20190063834A1 (en) 2019-02-28
CN109427623A (zh) 2019-03-05
JP7010629B2 (ja) 2022-01-26
TW201913718A (zh) 2019-04-01

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