JP7010629B2 - 基板乾燥方法および基板処理装置 - Google Patents

基板乾燥方法および基板処理装置 Download PDF

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Publication number
JP7010629B2
JP7010629B2 JP2017167867A JP2017167867A JP7010629B2 JP 7010629 B2 JP7010629 B2 JP 7010629B2 JP 2017167867 A JP2017167867 A JP 2017167867A JP 2017167867 A JP2017167867 A JP 2017167867A JP 7010629 B2 JP7010629 B2 JP 7010629B2
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Japan
Prior art keywords
vapor pressure
substrate
high vapor
liquid
sublimation agent
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English (en)
Japanese (ja)
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JP2019046943A (ja
JP2019046943A5 (https=
Inventor
学 奥谷
憲幸 菊本
直彦 吉原
博史 阿部
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Screen Holdings Co Ltd
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Screen Holdings Co Ltd
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Publication date
Application filed by Screen Holdings Co Ltd filed Critical Screen Holdings Co Ltd
Priority to JP2017167867A priority Critical patent/JP7010629B2/ja
Priority to US16/047,633 priority patent/US10760852B2/en
Priority to KR1020180088661A priority patent/KR102055070B1/ko
Priority to TW107126310A priority patent/TWI711068B/zh
Priority to CN201810858082.1A priority patent/CN109427623B/zh
Publication of JP2019046943A publication Critical patent/JP2019046943A/ja
Publication of JP2019046943A5 publication Critical patent/JP2019046943A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/08—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment
    • F26B5/10—Drying solid materials or objects by processes not involving the application of heat by centrifugal treatment the process involving freezing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel

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  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
JP2017167867A 2017-08-31 2017-08-31 基板乾燥方法および基板処理装置 Active JP7010629B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2017167867A JP7010629B2 (ja) 2017-08-31 2017-08-31 基板乾燥方法および基板処理装置
US16/047,633 US10760852B2 (en) 2017-08-31 2018-07-27 Substrate drying method and substrate processing apparatus
KR1020180088661A KR102055070B1 (ko) 2017-08-31 2018-07-30 기판 건조 방법 및 기판 처리 장치
TW107126310A TWI711068B (zh) 2017-08-31 2018-07-30 基板乾燥方法及基板處理裝置
CN201810858082.1A CN109427623B (zh) 2017-08-31 2018-07-31 基板干燥方法和基板处理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017167867A JP7010629B2 (ja) 2017-08-31 2017-08-31 基板乾燥方法および基板処理装置

Publications (3)

Publication Number Publication Date
JP2019046943A JP2019046943A (ja) 2019-03-22
JP2019046943A5 JP2019046943A5 (https=) 2020-09-24
JP7010629B2 true JP7010629B2 (ja) 2022-01-26

Family

ID=65434729

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JP2017167867A Active JP7010629B2 (ja) 2017-08-31 2017-08-31 基板乾燥方法および基板処理装置

Country Status (5)

Country Link
US (1) US10760852B2 (https=)
JP (1) JP7010629B2 (https=)
KR (1) KR102055070B1 (https=)
CN (1) CN109427623B (https=)
TW (1) TWI711068B (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6966899B2 (ja) * 2017-08-31 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
CN111630636B (zh) * 2018-01-29 2024-03-22 东京毅力科创株式会社 基片干燥装置、基片干燥方法和存储介质
JP7393210B2 (ja) * 2019-06-28 2023-12-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
CN112146364A (zh) * 2020-09-16 2020-12-29 李文静 一种鸭绒脱水冷干燥设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012074564A (ja) 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP2013033817A (ja) 2011-08-01 2013-02-14 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013042094A (ja) 2011-08-19 2013-02-28 Central Glass Co Ltd ウェハの洗浄方法
JP2013201302A (ja) 2012-03-26 2013-10-03 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2015050414A (ja) 2013-09-04 2015-03-16 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置
JP2015142069A (ja) 2014-01-30 2015-08-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2016195207A (ja) 2015-04-01 2016-11-17 株式会社東芝 基板処理装置および基板処理方法
JP2017037985A (ja) 2015-08-11 2017-02-16 東京エレクトロン株式会社 基板処理装置および昇華性物質の析出防止方法

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US5975097A (en) * 1996-09-02 1999-11-02 Tokyo Electron Limited Processing apparatus for target processing substrate
JP4841376B2 (ja) * 2006-02-07 2011-12-21 大日本スクリーン製造株式会社 基板処理装置
JP4884180B2 (ja) * 2006-11-21 2012-02-29 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20100258142A1 (en) 2009-04-14 2010-10-14 Mark Naoshi Kawaguchi Apparatus and method for using a viscoelastic cleaning material to remove particles on a substrate
US8419964B2 (en) * 2008-08-27 2013-04-16 Novellus Systems, Inc. Apparatus and method for edge bevel removal of copper from silicon wafers
JP5373429B2 (ja) 2009-02-25 2013-12-18 大日本スクリーン製造株式会社 基板乾燥装置および基板乾燥方法
TWI480937B (zh) * 2011-01-06 2015-04-11 斯克林集團公司 基板處理方法及基板處理裝置
US9673037B2 (en) * 2011-05-31 2017-06-06 Law Research Corporation Substrate freeze dry apparatus and method
CN103187340B (zh) * 2011-12-28 2016-08-03 斯克林集团公司 基板处理装置以及基板处理方法
KR20130122503A (ko) 2012-04-30 2013-11-07 세메스 주식회사 기판 세정 장치 및 기판 세정 방법
CN103377971A (zh) 2012-04-30 2013-10-30 细美事有限公司 用于清洗基板的装置和方法
JP6022829B2 (ja) * 2012-07-03 2016-11-09 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板乾燥装置
JP6275578B2 (ja) * 2014-07-30 2018-02-07 株式会社東芝 処理装置、処理方法、および電子デバイスの製造方法
US10249487B2 (en) 2015-01-23 2019-04-02 SCREEN Holdings Co., Ltd. Substrate processing method
JP6591280B2 (ja) * 2015-12-16 2019-10-16 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6624609B2 (ja) 2016-02-15 2019-12-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP6356207B2 (ja) 2016-12-15 2018-07-11 東京エレクトロン株式会社 基板乾燥方法及び基板処理装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012074564A (ja) 2010-09-29 2012-04-12 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
JP2013033817A (ja) 2011-08-01 2013-02-14 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013042094A (ja) 2011-08-19 2013-02-28 Central Glass Co Ltd ウェハの洗浄方法
JP2013201302A (ja) 2012-03-26 2013-10-03 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2015050414A (ja) 2013-09-04 2015-03-16 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥装置
JP2015142069A (ja) 2014-01-30 2015-08-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP2016195207A (ja) 2015-04-01 2016-11-17 株式会社東芝 基板処理装置および基板処理方法
JP2017037985A (ja) 2015-08-11 2017-02-16 東京エレクトロン株式会社 基板処理装置および昇華性物質の析出防止方法

Also Published As

Publication number Publication date
KR102055070B1 (ko) 2019-12-11
TWI711068B (zh) 2020-11-21
JP2019046943A (ja) 2019-03-22
KR20190024677A (ko) 2019-03-08
US10760852B2 (en) 2020-09-01
CN109427623B (zh) 2022-03-15
US20190063834A1 (en) 2019-02-28
CN109427623A (zh) 2019-03-05
TW201913718A (zh) 2019-04-01

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