KR102054328B1 - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

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KR102054328B1
KR102054328B1 KR1020147016303A KR20147016303A KR102054328B1 KR 102054328 B1 KR102054328 B1 KR 102054328B1 KR 1020147016303 A KR1020147016303 A KR 1020147016303A KR 20147016303 A KR20147016303 A KR 20147016303A KR 102054328 B1 KR102054328 B1 KR 102054328B1
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South Korea
Prior art keywords
substrate
gas
opening
projection system
temperature
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Korean (ko)
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KR20140102225A (ko
Inventor
마니쉬 란잔
카를로 라위텐
프랑크 얀센
맥심 체르니쇼프
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에이에스엠엘 네델란즈 비.브이.
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706847—Production of measurement radiation, e.g. synchrotron, free-electron laser, plasma source or higher harmonic generation [HHG]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020147016303A 2011-11-17 2012-10-12 리소그래피 장치 및 디바이스 제조 방법 Active KR102054328B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161561117P 2011-11-17 2011-11-17
US61/561,117 2011-11-17
PCT/EP2012/070247 WO2013072144A1 (en) 2011-11-17 2012-10-12 Lithographic apparatus and device manufacturing method

Related Child Applications (1)

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KR1020197035717A Division KR102136825B1 (ko) 2011-11-17 2012-10-12 리소그래피 장치 및 디바이스 제조 방법

Publications (2)

Publication Number Publication Date
KR20140102225A KR20140102225A (ko) 2014-08-21
KR102054328B1 true KR102054328B1 (ko) 2019-12-10

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KR1020147016303A Active KR102054328B1 (ko) 2011-11-17 2012-10-12 리소그래피 장치 및 디바이스 제조 방법
KR1020197035717A Active KR102136825B1 (ko) 2011-11-17 2012-10-12 리소그래피 장치 및 디바이스 제조 방법

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Country Status (6)

Country Link
US (2) US9625835B2 (enExample)
JP (2) JP6193870B2 (enExample)
KR (2) KR102054328B1 (enExample)
CN (2) CN103959171B (enExample)
TW (2) TWI647543B (enExample)
WO (1) WO2013072144A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI663481B (zh) * 2014-06-03 2019-06-21 荷蘭商Ａｓｍｌ荷蘭公司 用於補償一曝光誤差的方法、元件製造方法、基板台、微影裝置、控制系統、用於量測反射率的方法、及用於量測一極紫外線輻射劑量的方法
KR102592761B1 (ko) 2015-04-21 2023-10-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
JP6797627B2 (ja) * 2015-11-24 2020-12-09 キヤノン株式会社 インプリント装置、インプリント方法、および物品の製造方法
CN105842997B (zh) * 2016-06-03 2018-03-06 中国科学院光电研究院 一种动态气体锁的试验装置和试验方法
JP7060584B2 (ja) * 2016-09-02 2022-04-26 エーエスエムエル ネザーランズ ビー．ブイ． 冷却装置およびリソグラフィ装置
KR102620423B1 (ko) * 2017-05-29 2024-01-02 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치
CN111712766B (zh) * 2018-02-16 2024-04-02 Asml荷兰有限公司 包括气锁的设备
JP7148268B2 (ja) * 2018-05-01 2022-10-05 キヤノン株式会社 制御装置、リソグラフィ装置、および物品の製造方法
CN110966916B (zh) * 2018-09-30 2021-10-15 上海微电子装备（集团）股份有限公司 一种气浴装置及光刻机
EP4163721A1 (en) * 2021-10-06 2023-04-12 ASML Netherlands B.V. Chamber for a projection system of a lithographic apparatus, projection system and lithographic apparatus

Citations (1)

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JP2003531402A (ja) * 2000-04-18 2003-10-21 エーエスエムエル ユーエス，インコーポレイテッド 真空リソグラフィにおけるフォトレジスト気体放出の軽減

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JPH10284382A (ja) * 1997-04-07 1998-10-23 Komatsu Ltd 温度制御装置
JP3792986B2 (ja) * 2000-04-11 2006-07-05 東京エレクトロン株式会社 膜形成方法及び膜形成装置
JP2003234281A (ja) * 2002-02-08 2003-08-22 Canon Inc 露光装置、デバイス製造方法
US6934003B2 (en) * 2002-01-07 2005-08-23 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
TWI300953B (en) * 2002-03-15 2008-09-11 Nikon Corp Exposure system and device manufacturing process
JP4205054B2 (ja) * 2002-04-24 2009-01-07 株式会社ニコン 露光システム及びデバイス製造方法
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005129898A (ja) 2003-09-29 2005-05-19 Canon Inc 露光装置およびデバイス製造方法
US7304715B2 (en) * 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101069195B1 (ko) * 2004-09-23 2011-09-30 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 대기개방형 박막처리장치 및이를 이용한 박막처리방법
JP2006269942A (ja) * 2005-03-25 2006-10-05 Canon Inc 露光装置及びデバイス製造方法
US20070085984A1 (en) 2005-10-18 2007-04-19 Asml Netherlands B.V. Lithographic projection apparatus, device manufacturing method and device manufactured thereby
US7897110B2 (en) * 2005-12-20 2011-03-01 Asml Netherlands B.V. System and method for detecting at least one contamination species in a lithographic apparatus
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JP2009004647A (ja) * 2007-06-22 2009-01-08 Nikon Corp 真空容器と真空排気方法及びｅｕｖ露光装置
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JP2003531402A (ja) * 2000-04-18 2003-10-21 エーエスエムエル ユーエス，インコーポレイテッド 真空リソグラフィにおけるフォトレジスト気体放出の軽減

Also Published As

Publication number Publication date
US9823590B2 (en) 2017-11-21
TWI647543B (zh) 2019-01-11
TW201321905A (zh) 2013-06-01
WO2013072144A1 (en) 2013-05-23
JP6434582B2 (ja) 2018-12-05
US9625835B2 (en) 2017-04-18
CN107885044A (zh) 2018-04-06
JP2017223980A (ja) 2017-12-21
CN103959171B (zh) 2017-11-28
KR20190137951A (ko) 2019-12-11
US20150015856A1 (en) 2015-01-15
CN107885044B (zh) 2020-07-03
KR20140102225A (ko) 2014-08-21
US20170176877A1 (en) 2017-06-22
TWI626512B (zh) 2018-06-11
KR102136825B1 (ko) 2020-07-24
CN103959171A (zh) 2014-07-30
JP2015502036A (ja) 2015-01-19
TW201716885A (zh) 2017-05-16
JP6193870B2 (ja) 2017-09-06

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