KR102042212B1 - 리소그래피에서 기판의 위치 결정 - Google Patents

리소그래피에서 기판의 위치 결정 Download PDF

Info

Publication number
KR102042212B1
KR102042212B1 KR1020157013835A KR20157013835A KR102042212B1 KR 102042212 B1 KR102042212 B1 KR 102042212B1 KR 1020157013835 A KR1020157013835 A KR 1020157013835A KR 20157013835 A KR20157013835 A KR 20157013835A KR 102042212 B1 KR102042212 B1 KR 102042212B1
Authority
KR
South Korea
Prior art keywords
optical
region
mark
substrate
reflection coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020157013835A
Other languages
English (en)
Korean (ko)
Other versions
KR20150070407A (ko
Inventor
귀도 드 보어
닐스 베르게르
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20150070407A publication Critical patent/KR20150070407A/ko
Application granted granted Critical
Publication of KR102042212B1 publication Critical patent/KR102042212B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01L21/027—
    • H01L21/682—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020157013835A 2012-10-26 2013-10-28 리소그래피에서 기판의 위치 결정 Active KR102042212B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261718872P 2012-10-26 2012-10-26
US61/718,872 2012-10-26
US201261732445P 2012-12-03 2012-12-03
US61/732,445 2012-12-03
PCT/EP2013/072518 WO2014064290A1 (en) 2012-10-26 2013-10-28 Determining a position of a substrate in lithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197032495A Division KR102215545B1 (ko) 2012-10-26 2013-10-28 리소그래피에서 기판의 위치 결정

Publications (2)

Publication Number Publication Date
KR20150070407A KR20150070407A (ko) 2015-06-24
KR102042212B1 true KR102042212B1 (ko) 2019-11-08

Family

ID=49515344

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020157013835A Active KR102042212B1 (ko) 2012-10-26 2013-10-28 리소그래피에서 기판의 위치 결정
KR1020197032495A Active KR102215545B1 (ko) 2012-10-26 2013-10-28 리소그래피에서 기판의 위치 결정

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020197032495A Active KR102215545B1 (ko) 2012-10-26 2013-10-28 리소그래피에서 기판의 위치 결정

Country Status (9)

Country Link
US (1) US10054863B2 (https=)
EP (1) EP2912521A1 (https=)
JP (1) JP6367209B2 (https=)
KR (2) KR102042212B1 (https=)
CN (1) CN104885014B (https=)
NL (1) NL2011681C2 (https=)
RU (1) RU2659967C2 (https=)
TW (1) TWI617903B (https=)
WO (1) WO2014064290A1 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016015955A1 (en) * 2014-07-30 2016-02-04 Asml Netherlands B.V. Alignment sensor and lithographic apparatus background
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
DE102015211879B4 (de) * 2015-06-25 2018-10-18 Carl Zeiss Ag Vermessen von individuellen Daten einer Brille
US10386173B2 (en) * 2015-11-19 2019-08-20 Kris Vossough Integrated sensory systems
KR20170105247A (ko) * 2016-03-09 2017-09-19 삼성전자주식회사 마스크리스 노광 장치 및 이를 이용한 누적 광량의 측정 방법
CN105845596B (zh) * 2016-04-21 2018-12-04 京东方科技集团股份有限公司 一种测试设备及测试方法
EP3467591A4 (en) * 2016-05-31 2020-02-12 Nikon Corporation BRAND DETECTION APPARATUS, BRAND DETECTION METHOD, MEASURING APPARATUS, EXPOSURE APPARATUS, EXPOSURE METHOD AND DEVICE MANUFACTURING METHOD
WO2018033499A1 (en) * 2016-08-15 2018-02-22 Asml Netherlands B.V. Alignment method
US10021372B2 (en) 2016-09-16 2018-07-10 Qualcomm Incorporated Systems and methods for improved depth sensing
US10418290B2 (en) * 2017-02-02 2019-09-17 United Microelectronics Corp. Method of patterning semiconductor device
US10585360B2 (en) 2017-08-25 2020-03-10 Applied Materials, Inc. Exposure system alignment and calibration method
US10670802B2 (en) 2017-08-31 2020-06-02 University of Pittsburgh—of the Commonwealth System of Higher Education Method of making a distributed optical fiber sensor having enhanced Rayleigh scattering and enhanced temperature stability, and monitoring systems employing same
CN107728236B (zh) * 2017-10-26 2019-07-05 鲁东大学 超构表面元件的制造方法及其产生纳米尺度纵向光斑链的方法
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
WO2020180470A1 (en) * 2019-03-01 2020-09-10 Applied Materials, Inc. Transparent wafer center finder
KR102785614B1 (ko) 2020-03-13 2025-03-27 에이에스엠엘 네델란즈 비.브이. 다중 하전 입자 빔 검사에서의 레벨링 센서
KR102937512B1 (ko) 2020-09-29 2026-03-12 삼성전자주식회사 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060141374A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus with multiple alignment arrangements and alignment measuring method
JP2007142419A (ja) 2005-11-22 2007-06-07 Asml Netherlands Bv アライメントマークとしての２元正弦サブ波長回折格子
JP2009105433A (ja) 2004-12-23 2009-05-14 Asml Netherlands Bv ２次元位置合わせ測定構成及び２次元位置合わせ測定方法を有したリソグラフィ装置
JP2009302534A (ja) 2008-06-11 2009-12-24 Asml Netherlands Bv サブセグメント化されたアライメントマーク構成
US20100123886A1 (en) 2008-11-18 2010-05-20 Asml Netherlands B.V. Lithographic Apparatus and Device Manufacturing Method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631416A (en) 1983-12-19 1986-12-23 Hewlett-Packard Company Wafer/mask alignment system using diffraction gratings
AT393925B (de) 1987-06-02 1992-01-10 Ims Ionen Mikrofab Syst Anordnung zur durchfuehrung eines verfahrens zum positionieren der abbildung der auf einer maske befindlichen struktur auf ein substrat, und verfahren zum ausrichten von auf einer maske angeordneten markierungen auf markierungen, die auf einem traeger angeordnet sind
US5523193A (en) * 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JPH0786121A (ja) 1993-06-30 1995-03-31 Canon Inc ずれ測定方法及びそれを用いた位置検出装置
JPH07248208A (ja) * 1994-03-11 1995-09-26 Nikon Corp 位置合わせ装置
US5827629A (en) 1995-05-11 1998-10-27 Sumitomo Heavy Industries, Ltd. Position detecting method with observation of position detecting marks
JPH1038514A (ja) * 1996-07-23 1998-02-13 Nikon Corp 位置検出装置
KR970028876A (ko) 1995-11-10 1997-06-24 오노 시게오 위치검출장치
US7184594B1 (en) 1999-01-18 2007-02-27 Nikon Corporation Pattern matching method and device, position determining method and device, position aligning method and device, exposing method and device, and device and its production method
EP1111473A3 (en) 1999-12-23 2004-04-21 ASML Netherlands B.V. Lithographic apparatus with vacuum chamber and interferometric alignment system
JP3989697B2 (ja) * 2001-05-30 2007-10-10 富士通株式会社 半導体装置及び半導体装置の位置検出方法
US7116626B1 (en) 2001-11-27 2006-10-03 Inphase Technologies, Inc. Micro-positioning movement of holographic data storage system components
JP4165871B2 (ja) 2002-03-15 2008-10-15 キヤノン株式会社 位置検出方法、位置検出装置及び露光装置
JP4999781B2 (ja) 2002-03-15 2012-08-15 キヤノン株式会社 位置検出装置及び方法、露光装置、デバイス製造方法
EP2204697A3 (en) * 2002-09-20 2012-04-18 ASML Netherlands B.V. Marker structure, lithographic projection apparatus, method for substrate alignment using such a structure, and substrate comprising such marker structure
TWI227814B (en) * 2002-09-20 2005-02-11 Asml Netherlands Bv Alignment system and methods for lithographic systems using at least two wavelengths
US7425396B2 (en) 2003-09-30 2008-09-16 Infineon Technologies Ag Method for reducing an overlay error and measurement mark for carrying out the same
JP2005116626A (ja) 2003-10-03 2005-04-28 Canon Inc 位置検出装置及び位置検出方法、並びに露光装置
US20060061743A1 (en) * 2004-09-22 2006-03-23 Asml Netherlands B.V. Lithographic apparatus, alignment system, and device manufacturing method
JP4520429B2 (ja) * 2005-06-01 2010-08-04 エーエスエムエル ネザーランズ ビー．ブイ． 位置合わせ装置への２次元フォトニック結晶の応用
US20080079920A1 (en) 2006-09-29 2008-04-03 Heiko Hommen Wafer exposure device and method
JP5738981B2 (ja) 2010-04-12 2015-06-24 エーエスエムエル ネザーランズ ビー．ブイ． 基板ハンドリング装置、リソグラフィ装置、ツール、及びデバイス製造方法
NL2008111A (en) * 2011-02-18 2012-08-21 Asml Netherlands Bv Optical apparatus, method of scanning, lithographic apparatus and device manufacturing method.
NL2008285A (en) 2011-03-11 2012-09-12 Asml Netherlands Bv Method of controlling a lithographic apparatus, device manufacturing method, lithographic apparatus, computer program product and method of improving a mathematical model of a lithographic process.
WO2012144905A2 (en) * 2011-04-22 2012-10-26 Mapper Lithography Ip B.V. Lithography system for processing a target, such as a wafer, and a method for operating a lithography system for processing a target, such as a wafer
NL2008679C2 (en) * 2011-04-22 2013-06-26 Mapper Lithography Ip Bv Position determination in a lithography system using a substrate having a partially reflective position mark.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009105433A (ja) 2004-12-23 2009-05-14 Asml Netherlands Bv ２次元位置合わせ測定構成及び２次元位置合わせ測定方法を有したリソグラフィ装置
US20060141374A1 (en) 2004-12-27 2006-06-29 Asml Netherlands B.V. Lithographic apparatus with multiple alignment arrangements and alignment measuring method
JP2007142419A (ja) 2005-11-22 2007-06-07 Asml Netherlands Bv アライメントマークとしての２元正弦サブ波長回折格子
JP2009302534A (ja) 2008-06-11 2009-12-24 Asml Netherlands Bv サブセグメント化されたアライメントマーク構成
US20100123886A1 (en) 2008-11-18 2010-05-20 Asml Netherlands B.V. Lithographic Apparatus and Device Manufacturing Method

Also Published As

Publication number Publication date
WO2014064290A1 (en) 2014-05-01
RU2659967C2 (ru) 2018-07-04
JP6367209B2 (ja) 2018-08-01
TW201426208A (zh) 2014-07-01
NL2011681C2 (en) 2014-05-01
JP2016500845A (ja) 2016-01-14
US10054863B2 (en) 2018-08-21
TWI617903B (zh) 2018-03-11
KR20150070407A (ko) 2015-06-24
CN104885014B (zh) 2017-05-31
RU2015119644A (ru) 2016-12-20
EP2912521A1 (en) 2015-09-02
US20150177625A1 (en) 2015-06-25
CN104885014A (zh) 2015-09-02
KR20190126457A (ko) 2019-11-11
KR102215545B1 (ko) 2021-02-16

Similar Documents

Publication Publication Date Title
KR102042212B1 (ko) 리소그래피에서 기판의 위치 결정
EP2699967B1 (en) Position determination in a lithography system using a substrate having a partially reflective position mark
JP6219320B2 (ja) ウェーハなどのターゲットを処理するためのリソグラフィシステム及び方法
US9201315B2 (en) Lithography system for processing a target, such as a wafer, a method for operating a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system
US9030661B1 (en) Alignment measurement system
US9366524B2 (en) Alignment sensor and height sensor
KR20130010845A (ko) 하전 입자 빔 묘화 장치 및 물품 제조 방법
KR102554797B1 (ko) 다중 빔 리소그래피에서의 개개의 빔 패턴 배치 검증
JPH021503A (ja) 位置検出装置
JP3003671B2 (ja) 試料表面の高さ検出方法及びその装置

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

A302 Request for accelerated examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0302 Request for accelerated examination

St.27 status event code: A-1-2-D10-D17-exm-PA0302

St.27 status event code: A-1-2-D10-D16-exm-PA0302

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

N231 Notification of change of applicant
PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A107 Divisional application of patent
GRNT Written decision to grant
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 7

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000