KR101990658B1 - 반응성 스퍼터링 공정 - Google Patents

반응성 스퍼터링 공정 Download PDF

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Publication number
KR101990658B1
KR101990658B1 KR1020147018427A KR20147018427A KR101990658B1 KR 101990658 B1 KR101990658 B1 KR 101990658B1 KR 1020147018427 A KR1020147018427 A KR 1020147018427A KR 20147018427 A KR20147018427 A KR 20147018427A KR 101990658 B1 KR101990658 B1 KR 101990658B1
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impulse
target
power
voltage
target surface
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KR20140108672A (ko
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시그프리드 크라스니트저
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오를리콘 서피스 솔루션스 아크티엔게젤샤프트, 페피콘
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0094—Reactive sputtering in transition mode
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3476—Testing and control
    • H01J37/3485—Means for avoiding target poisoning
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
KR1020147018427A 2011-12-05 2012-11-23 반응성 스퍼터링 공정 Active KR101990658B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161566836P 2011-12-05 2011-12-05
US61/566,836 2011-12-05
PCT/EP2012/004848 WO2013083238A1 (de) 2011-12-05 2012-11-23 Reaktiver sputterprozess

Publications (2)

Publication Number Publication Date
KR20140108672A KR20140108672A (ko) 2014-09-12
KR101990658B1 true KR101990658B1 (ko) 2019-06-18

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KR1020147018427A Active KR101990658B1 (ko) 2011-12-05 2012-11-23 반응성 스퍼터링 공정

Country Status (18)

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US (1) US10458015B2 (cg-RX-API-DMAC10.html)
EP (1) EP2789006B1 (cg-RX-API-DMAC10.html)
JP (1) JP6113743B2 (cg-RX-API-DMAC10.html)
KR (1) KR101990658B1 (cg-RX-API-DMAC10.html)
CN (1) CN104272429B (cg-RX-API-DMAC10.html)
AR (1) AR089044A1 (cg-RX-API-DMAC10.html)
BR (1) BR112014013533B1 (cg-RX-API-DMAC10.html)
CA (1) CA2858251C (cg-RX-API-DMAC10.html)
ES (1) ES2704121T3 (cg-RX-API-DMAC10.html)
MX (1) MX368733B (cg-RX-API-DMAC10.html)
MY (1) MY181526A (cg-RX-API-DMAC10.html)
PH (1) PH12014501269B1 (cg-RX-API-DMAC10.html)
PL (1) PL2789006T3 (cg-RX-API-DMAC10.html)
RU (1) RU2632210C2 (cg-RX-API-DMAC10.html)
SG (1) SG11201402945YA (cg-RX-API-DMAC10.html)
SI (1) SI2789006T1 (cg-RX-API-DMAC10.html)
TW (1) TWI565816B (cg-RX-API-DMAC10.html)
WO (1) WO2013083238A1 (cg-RX-API-DMAC10.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5871103B2 (ja) * 2013-06-04 2016-03-01 株式会社村田製作所 薄膜形成方法
JP6122975B2 (ja) 2013-07-03 2017-04-26 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン ＴｉｘＳｉ１−ｘＮ層を含んでなるコーティングによりワークピースをコーティングする方法
DE102016012460A1 (de) 2016-10-19 2018-04-19 Grenzebach Maschinenbau Gmbh Vorrichtung und Verfahren zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter - Anlagen
EP3406761A1 (en) 2017-05-24 2018-11-28 Walter Ag A method for producing a coated cutting tool and a coated cutting tool
CN110184571A (zh) * 2019-05-07 2019-08-30 天津君盛天成科技发展有限公司 高功率脉冲涂装方法
WO2021160337A1 (en) * 2020-02-11 2021-08-19 Oerlikon Surface Solutions Ag, Pfäffikon Method of surface smoothening of additive manufactured metal components
CN111621756B (zh) * 2020-03-27 2021-12-24 中国科学院力学研究所 一种室温溅射制备晶态透明氧化铝薄膜的方法

Citations (4)

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WO2007147582A1 (de) 2006-06-20 2007-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur regelung eines reaktiven hochleistungs-puls-magnetronsputterprozesses und vorrichtung hierzu
WO2009071667A1 (en) 2007-12-07 2009-06-11 Oc Oerlikon Balzers Ag Reactive sputtering with hipims
JP2010529295A (ja) * 2007-06-08 2010-08-26 サンドビック インテレクチュアル プロパティー アクティエボラーグ Ｐｖｄ被膜形成方法
US20110248633A1 (en) * 2007-11-16 2011-10-13 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current

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DE3700633C2 (de) * 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
DE19610012B4 (de) * 1996-03-14 2005-02-10 Unaxis Deutschland Holding Gmbh Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre
SE521095C2 (sv) 2001-06-08 2003-09-30 Cardinal Cg Co Förfarande för reaktiv sputtring
JP2005521202A (ja) * 2002-03-15 2005-07-14 ユナキス・バルツェルス・アクチェンゲゼルシャフト 真空プラズマ発生器
JP3866615B2 (ja) * 2002-05-29 2007-01-10 株式会社神戸製鋼所 反応性スパッタリング方法及び装置
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US8500965B2 (en) * 2004-05-06 2013-08-06 Ppg Industries Ohio, Inc. MSVD coating process
DE102006017382A1 (de) 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
GB0608582D0 (en) * 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
US7685852B2 (en) 2007-06-28 2010-03-30 Rahamim Komemi Tool for pin tumbler locks
JP2010065240A (ja) * 2008-09-08 2010-03-25 Kobe Steel Ltd スパッタ装置
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
CN103608893B (zh) 2011-04-20 2016-08-31 欧瑞康表面解决方案股份公司，普费菲孔 用于提供顺序功率脉冲的方法

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
WO2007147582A1 (de) 2006-06-20 2007-12-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur regelung eines reaktiven hochleistungs-puls-magnetronsputterprozesses und vorrichtung hierzu
JP2010529295A (ja) * 2007-06-08 2010-08-26 サンドビック インテレクチュアル プロパティー アクティエボラーグ Ｐｖｄ被膜形成方法
US20110248633A1 (en) * 2007-11-16 2011-10-13 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
WO2009071667A1 (en) 2007-12-07 2009-06-11 Oc Oerlikon Balzers Ag Reactive sputtering with hipims
US20090173622A1 (en) * 2007-12-07 2009-07-09 Oc Oerlikon Balzers Ag Reactive sputtering with hipims

Also Published As

Publication number Publication date
TWI565816B (zh) 2017-01-11
US10458015B2 (en) 2019-10-29
CA2858251C (en) 2019-12-10
JP6113743B2 (ja) 2017-04-12
MX2014006729A (es) 2015-02-24
PH12014501269B1 (en) 2019-03-08
SI2789006T1 (sl) 2019-02-28
BR112014013533A8 (pt) 2017-06-13
ES2704121T3 (es) 2019-03-14
BR112014013533B1 (pt) 2021-09-08
JP2015504970A (ja) 2015-02-16
RU2014127520A (ru) 2016-01-27
PH12014501269A1 (en) 2014-09-08
EP2789006A1 (de) 2014-10-15
KR20140108672A (ko) 2014-09-12
TW201331401A (zh) 2013-08-01
MX368733B (es) 2019-10-14
US20140311892A1 (en) 2014-10-23
CN104272429A (zh) 2015-01-07
CN104272429B (zh) 2016-08-24
PL2789006T3 (pl) 2019-04-30
MY181526A (en) 2020-12-25
WO2013083238A1 (de) 2013-06-13
RU2632210C2 (ru) 2017-10-03
EP2789006B1 (de) 2018-10-31
CA2858251A1 (en) 2013-06-13
AR089044A1 (es) 2014-07-23
BR112014013533A2 (pt) 2017-06-13
SG11201402945YA (en) 2014-10-30

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