MX2014006729A - Proceso de pulverizacion catodica reactiva. - Google Patents
Proceso de pulverizacion catodica reactiva.Info
- Publication number
- MX2014006729A MX2014006729A MX2014006729A MX2014006729A MX2014006729A MX 2014006729 A MX2014006729 A MX 2014006729A MX 2014006729 A MX2014006729 A MX 2014006729A MX 2014006729 A MX2014006729 A MX 2014006729A MX 2014006729 A MX2014006729 A MX 2014006729A
- Authority
- MX
- Mexico
- Prior art keywords
- voltage pulse
- target
- target surface
- reactive gas
- consequently
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3485—Sputtering using pulsed power to the target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0094—Reactive sputtering in transition mode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3476—Testing and control
- H01J37/3485—Means for avoiding target poisoning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
La invención se relaciona con un método para la pulverización catódica reactiva en el cual, mediante el bombardeo iónico, el material se expulsa de la superficie de un primer objeto y experimenta la transición a la fase gaseosa, donde el voltaje negativo se aplica por pulsos al objeto de una manera tal que una corriente eléctrica que tiene una densidad de corriente mayor que 0.5A/cm2 ocurra en la superficie del objeto, de tal manera que el material que experimenta la transición a la fase gaseosa por lo menos se ionice parcialmente, y donde se establece un flujo de gas reactivo y el gas reactivo reacciona con el material de la superficie del objeto, caracterizado porque la duración de un pulso de voltaje se elige de tal manera que, durante el pulso de voltaje, la superficie del objeto, en la ubicación o las ubicaciones en las cuales la corriente fluye, la mayoría del tiempo se cubra por lo menos parcialmente con un compuesto integrado por el gas reactivo y el material del objeto y, por lo tanto, la superficie del objeto esté en un primer estado intermedio, y esta cubierta sea más pequeña al final del pulso de voltaje que al inicio del pulso de voltaje y, por lo tanto, la superficie del objeto esté en un segundo estado intermedio al final del pulso de voltaje.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161566836P | 2011-12-05 | 2011-12-05 | |
PCT/EP2012/004848 WO2013083238A1 (de) | 2011-12-05 | 2012-11-23 | Reaktiver sputterprozess |
Publications (2)
Publication Number | Publication Date |
---|---|
MX2014006729A true MX2014006729A (es) | 2015-02-24 |
MX368733B MX368733B (es) | 2019-10-14 |
Family
ID=47504785
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX2014006729A MX368733B (es) | 2011-12-05 | 2012-11-23 | Proceso de pulverizacion catodica reactiva. |
Country Status (18)
Country | Link |
---|---|
US (1) | US10458015B2 (es) |
EP (1) | EP2789006B1 (es) |
JP (1) | JP6113743B2 (es) |
KR (1) | KR101990658B1 (es) |
CN (1) | CN104272429B (es) |
AR (1) | AR089044A1 (es) |
BR (1) | BR112014013533B1 (es) |
CA (1) | CA2858251C (es) |
ES (1) | ES2704121T3 (es) |
MX (1) | MX368733B (es) |
MY (1) | MY181526A (es) |
PH (1) | PH12014501269A1 (es) |
PL (1) | PL2789006T3 (es) |
RU (1) | RU2632210C2 (es) |
SG (1) | SG11201402945YA (es) |
SI (1) | SI2789006T1 (es) |
TW (1) | TWI565816B (es) |
WO (1) | WO2013083238A1 (es) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5871103B2 (ja) * | 2013-06-04 | 2016-03-01 | 株式会社村田製作所 | 薄膜形成方法 |
PL3017079T5 (pl) * | 2013-07-03 | 2020-12-28 | Oerlikon Surface Solutions Ag, Pfäffikon | Sposób wytwarzania warstw tixsi1-xn |
DE102016012460A1 (de) | 2016-10-19 | 2018-04-19 | Grenzebach Maschinenbau Gmbh | Vorrichtung und Verfahren zur Herstellung definierter Eigenschaften von Gradientenschichten in einem System mehrlagiger Beschichtungen bei Sputter - Anlagen |
EP3406761A1 (en) | 2017-05-24 | 2018-11-28 | Walter Ag | A method for producing a coated cutting tool and a coated cutting tool |
CN110184571A (zh) * | 2019-05-07 | 2019-08-30 | 天津君盛天成科技发展有限公司 | 高功率脉冲涂装方法 |
WO2021160337A1 (en) * | 2020-02-11 | 2021-08-19 | Oerlikon Surface Solutions Ag, Pfäffikon | Method of surface smoothening of additive manufactured metal components |
CN111621756B (zh) * | 2020-03-27 | 2021-12-24 | 中国科学院力学研究所 | 一种室温溅射制备晶态透明氧化铝薄膜的方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3700633C2 (de) * | 1987-01-12 | 1997-02-20 | Reinar Dr Gruen | Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma |
DE19610012B4 (de) * | 1996-03-14 | 2005-02-10 | Unaxis Deutschland Holding Gmbh | Verfahren zur Stabilisierung eines Arbeitspunkts beim reaktiven Zerstäuben in einer Sauerstoff enthaltenden Atmosphäre |
SE521095C2 (sv) | 2001-06-08 | 2003-09-30 | Cardinal Cg Co | Förfarande för reaktiv sputtring |
AU2003203127A1 (en) * | 2002-03-15 | 2003-09-29 | Unaxis Balzers Ag | Vacuum plasma generator |
JP3866615B2 (ja) | 2002-05-29 | 2007-01-10 | 株式会社神戸製鋼所 | 反応性スパッタリング方法及び装置 |
US20050103620A1 (en) * | 2003-11-19 | 2005-05-19 | Zond, Inc. | Plasma source with segmented magnetron cathode |
US8500965B2 (en) * | 2004-05-06 | 2013-08-06 | Ppg Industries Ohio, Inc. | MSVD coating process |
DE102006017382A1 (de) | 2005-11-14 | 2007-05-16 | Itg Induktionsanlagen Gmbh | Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen |
GB0608582D0 (en) * | 2006-05-02 | 2006-06-07 | Univ Sheffield Hallam | High power impulse magnetron sputtering vapour deposition |
DE102006061324B4 (de) * | 2006-06-20 | 2008-07-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Regelung eines reaktiven Hochleistungs-Puls-Magnetronsputterprozesses und Vorrichtung hierzu |
SE533395C2 (sv) | 2007-06-08 | 2010-09-14 | Sandvik Intellectual Property | Sätt att göra PVD-beläggningar |
US7685852B2 (en) | 2007-06-28 | 2010-03-30 | Rahamim Komemi | Tool for pin tumbler locks |
US9039871B2 (en) * | 2007-11-16 | 2015-05-26 | Advanced Energy Industries, Inc. | Methods and apparatus for applying periodic voltage using direct current |
WO2009071667A1 (en) | 2007-12-07 | 2009-06-11 | Oc Oerlikon Balzers Ag | Reactive sputtering with hipims |
JP2010065240A (ja) * | 2008-09-08 | 2010-03-25 | Kobe Steel Ltd | スパッタ装置 |
DE202010001497U1 (de) | 2010-01-29 | 2010-04-22 | Hauzer Techno-Coating B.V. | Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle |
EP2700083B1 (de) | 2011-04-20 | 2015-04-22 | Oerlikon Surface Solutions AG, Trübbach | Verfahren zur bereistellung sequenzieller leistungspulse |
-
2012
- 2012-11-23 EP EP12810067.4A patent/EP2789006B1/de active Active
- 2012-11-23 US US14/362,758 patent/US10458015B2/en active Active
- 2012-11-23 KR KR1020147018427A patent/KR101990658B1/ko active IP Right Grant
- 2012-11-23 JP JP2014545125A patent/JP6113743B2/ja not_active Expired - Fee Related
- 2012-11-23 SG SG11201402945YA patent/SG11201402945YA/en unknown
- 2012-11-23 RU RU2014127520A patent/RU2632210C2/ru active
- 2012-11-23 WO PCT/EP2012/004848 patent/WO2013083238A1/de active Application Filing
- 2012-11-23 MY MYPI2014001644A patent/MY181526A/en unknown
- 2012-11-23 CN CN201280069085.8A patent/CN104272429B/zh active Active
- 2012-11-23 CA CA2858251A patent/CA2858251C/en not_active Expired - Fee Related
- 2012-11-23 PL PL12810067T patent/PL2789006T3/pl unknown
- 2012-11-23 SI SI201231461T patent/SI2789006T1/sl unknown
- 2012-11-23 MX MX2014006729A patent/MX368733B/es active IP Right Grant
- 2012-11-23 BR BR112014013533-9A patent/BR112014013533B1/pt active IP Right Grant
- 2012-11-23 ES ES12810067T patent/ES2704121T3/es active Active
- 2012-11-30 TW TW101144896A patent/TWI565816B/zh not_active IP Right Cessation
- 2012-11-30 AR ARP120104504A patent/AR089044A1/es active IP Right Grant
-
2014
- 2014-06-05 PH PH12014501269A patent/PH12014501269A1/en unknown
Also Published As
Publication number | Publication date |
---|---|
US10458015B2 (en) | 2019-10-29 |
ES2704121T3 (es) | 2019-03-14 |
EP2789006A1 (de) | 2014-10-15 |
CA2858251C (en) | 2019-12-10 |
EP2789006B1 (de) | 2018-10-31 |
RU2632210C2 (ru) | 2017-10-03 |
US20140311892A1 (en) | 2014-10-23 |
KR20140108672A (ko) | 2014-09-12 |
JP2015504970A (ja) | 2015-02-16 |
JP6113743B2 (ja) | 2017-04-12 |
CA2858251A1 (en) | 2013-06-13 |
TW201331401A (zh) | 2013-08-01 |
BR112014013533A8 (pt) | 2017-06-13 |
PH12014501269B1 (en) | 2014-09-08 |
BR112014013533A2 (pt) | 2017-06-13 |
TWI565816B (zh) | 2017-01-11 |
SG11201402945YA (en) | 2014-10-30 |
MX368733B (es) | 2019-10-14 |
KR101990658B1 (ko) | 2019-06-18 |
CN104272429B (zh) | 2016-08-24 |
RU2014127520A (ru) | 2016-01-27 |
CN104272429A (zh) | 2015-01-07 |
SI2789006T1 (sl) | 2019-02-28 |
AR089044A1 (es) | 2014-07-23 |
PL2789006T3 (pl) | 2019-04-30 |
WO2013083238A1 (de) | 2013-06-13 |
MY181526A (en) | 2020-12-25 |
PH12014501269A1 (en) | 2014-09-08 |
BR112014013533B1 (pt) | 2021-09-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
PH12014501269A1 (en) | Reactive sputtering process | |
JP2015504970A5 (es) | ||
TW201614089A (en) | A high power impulse magnetron sputtering process to achieve a high density high SP3 containing layer | |
CN104246967B (zh) | 用于提供顺序的功率脉冲的方法 | |
TWI586825B (zh) | 提供連續功率脈衝之方法 | |
MY159000A (en) | Control device, control method, program, and recording medium | |
MY148545A (en) | Removal of surface oxides by electron attachment | |
MX2012015089A (es) | Fuente de desposicion por arco que tiene un campo electrico definido. | |
WO2011089419A3 (en) | Mass to charge ratio selective ejection from ion guide having supplemental rf voltage applied thereto | |
MX2013012200A (es) | Metodo de pulverizacion catódica por magnetron de impulso de alta potencia que proporciona la ionizacion mejorada de las particulas obtenidas por pulverización catódica y aparato para su implementacion. | |
MY171167A (en) | High-power pulse coating method | |
WO2013055141A3 (ko) | 생체용 재료의 표면개질 장치 및 표면개질 방법 | |
WO2010120079A3 (ko) | 플라스마 표면 처리 장치 및 방법 | |
WO2012019761A3 (de) | Umformverfahren für ein werkstück unter ausnutzung des elektroplastichen effekts | |
US9881775B2 (en) | Waveform for improved energy control of sputtered species | |
WO2009033577A3 (de) | Verfahren und vorrichtung zur auf-, um- oder entladung von aerosolpartikeln durch ionen, insbesondere in einen diffusionsbasierten bipolaren gleichgewichtszustand | |
FR2926395B1 (fr) | Source pulsee d'electrons, procede d'alimentation electrique pour source pulsee d'electrons et procede de commande d'une source pulsee d'electrons | |
WO2012139707A8 (de) | Kohlenstofffunkenverdampfung | |
WO2012150877A3 (ru) | Способ модификации поверхностных свойств материалов и изделий | |
Kimura et al. | Preparation of hydrogenated diamond-like carbon films by reactive Ar/CH 4 high power impulse magnetron sputtering with negative pulse voltage | |
Chistyakov | HIPIMS Arc-Free Reactive Deposition of Non-conductive Films Using the Applied Material ENDURA 200 mm Cluster Tool | |
Pinchuk et al. | Electrode erosion in high current high pressure arcs | |
EP2410075A3 (en) | Methods and apparatus of arc prevention during RF sputtering of a thin film on a substrate | |
TW200940733A (en) | Sputtering target having a controlled occupancy rate of pinholes and method for making such sputtering target | |
Barengolts et al. | Parameters of vacuum arc plasma with deuterium and hydrogen saturated zirconium cathode |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
HC | Change of company name or juridical status |
Owner name: SOCIETE DES PRODUITS NESTLE S.A.* |
|
FG | Grant or registration | ||
HC | Change of company name or juridical status |
Owner name: SOCIETEDES PRODUITS NESTLES.A.* |