KR101972048B1 - Electrode structure and light emitting device including the same - Google Patents

Electrode structure and light emitting device including the same Download PDF

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KR101972048B1
KR101972048B1 KR1020120120671A KR20120120671A KR101972048B1 KR 101972048 B1 KR101972048 B1 KR 101972048B1 KR 1020120120671 A KR1020120120671 A KR 1020120120671A KR 20120120671 A KR20120120671 A KR 20120120671A KR 101972048 B1 KR101972048 B1 KR 101972048B1
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South Korea
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light emitting
layer
disposed
light
emitting device
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KR1020120120671A
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Korean (ko)
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KR20140054770A (en
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박정진
박금환
현우진
박오옥
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엘지이노텍 주식회사
한국과학기술원
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Priority to KR1020120120671A priority Critical patent/KR101972048B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Embodiments include a conductive layer comprising a plurality of silver (Ag) particles having a nanoscale size; And a plurality of holes formed between the conductive layers, wherein the holes provide an electrode structure in which the opening of the first surface is larger than the opening of the second surface.

Description

ELECTRODE STRUCTURE AND LIGHT EMITTING DEVICE INCLUDING THE SAME}

Embodiments relate to an electrode structure and a light emitting device including the same.

Group 3-5 compound semiconductors, such as GaN and AlGaN, are widely used for optoelectronics and electronic devices due to many advantages, such as having a wide and easy to adjust band gap energy.

In particular, light emitting devices such as a light emitting diode or a laser diode using a group 3-5 or 2-6 compound semiconductor material of a semiconductor are developed using thin film growth technology and device materials such as red, green, blue and ultraviolet light. Various colors can be realized, and efficient white light can be realized by using fluorescent materials or combining colors.Low power consumption, semi-permanent life, fast response speed, safety and environment compared to conventional light sources such as fluorescent and incandescent lamps can be realized. Has the advantage of affinity.

Therefore, a white light emitting device that can replace a fluorescent light bulb or an incandescent bulb that replaces a Cold Cathode Fluorescence Lamp (CCFL) constituting a backlight of a transmission module of an optical communication means and a liquid crystal display (LCD) display device. Applications are expanding to diode lighting devices, automotive headlights and traffic lights.

The light emitting device includes a light emitting structure, wherein the light emitting structure includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and an electrode and an electrode on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively. Is placed. In addition, the light emitting device emits light having energy determined by an energy band inherent in the material of the active layer where electrons injected through the first conductive semiconductor layer and holes injected through the second conductive semiconductor layer meet each other. . The light emitted from the active layer may vary depending on the composition of the material forming the active layer, and may be blue light, ultraviolet light, or deep ultraviolet light.

In order to emit a sufficient amount of light from the active layer, electrons and holes must be sufficiently injected. In order to fully inject electrons and holes, sufficient current must be supplied to the entire areas of the first conductive semiconductor layer and the second conductive semiconductor layer.

However, electrons or holes may not be sufficiently injected due to contact characteristics with the electrodes or resistance of the first conductive semiconductor layer and the second conductive semiconductor layer itself, and in particular, the second conductive semiconductor doped with p-type. The layer has poor contact properties with the electrodes so that no current is supplied throughout.

In order to solve the above problems, there is an effort to increase the current spreading effect to the second conductive semiconductor layer by disposing a transparent conductive layer such as ITO between the second conductive semiconductor layer and the electrode. However, the current spreading effect to the second conductivity type semiconductor layer is still not good. Especially, in the case of a light emitting structure that emits light in the ultraviolet, near ultraviolet, or deep ultraviolet region due to the high absorption of light in the ultraviolet region, ITO is transparent. It is difficult to use as a conductive layer.

Embodiments provide an electrode structure having excellent current spreading effect to a light emitting structure and low light absorption, and a light emitting device including the same.

Embodiments include a conductive layer comprising a plurality of silver (Ag) particles having a nanoscale size; And a plurality of holes formed between the conductive layers, wherein the holes provide an electrode structure in which the opening of the first surface is larger than the opening of the second surface.

The plurality of silver particles may be disposed in contact with the sintered plastic.

The inner surface of the opening of the hole may be in the shape of a portion of the outer circumferential surface of the sphere.

The silver particles may have a size of 10 nanometers to 50 nanometers.

The conductive layer may have a thickness of 30 nanometers to 200 nanometers.

It may have a light transmittance of 80% or more in the ultraviolet region.

The conductive layer may be disposed in two to three layers of silver particles.

The plurality of holes may be arranged in a row and a row, and the holes disposed in the adjacent column or row may be alternately disposed.

Another embodiment includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; The above-described electrode including a first electrode and a second electrode disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, and disposed between the second conductive semiconductor layer and the second electrode. It provides a light emitting device comprising a structure.

At least one of the first electrode and the second electrode may be the electrode structure described above.

The electrode structure may have a distance between the second opening and the light emitting structure smaller than a distance between the first opening and the light emitting structure.

Light in the ultraviolet, near or deep ultraviolet wavelength range may be emitted from the active layer.

In the electrode structure and the light emitting device including the same according to the present embodiment, the electrode structure having a high light transmittance and low resistance is disposed on the light emitting structure or forms the first and second electrodes, thereby forming the first conductive semiconductor layer and the second conductive semiconductor. The current is supplied to the entire area of the layer, and the absorption of light in the electrode structure is also reduced, so that the light efficiency of the light emitting device can be improved.

1 is a perspective view of one embodiment of an electrode structure,
FIG. 2 is a view illustrating a region 'A' of FIG. 1,
3 is a cross-sectional view taken along the line II ′ of FIG. 1;
4 is a view showing the arrangement of holes in the electrode structure,
5 is a view showing the light transmittance according to the wavelength of the electrode structure described above.
6a to 6i are views showing one embodiment of a manufacturing process of the electrode structure,
7 and 8 are views showing one embodiment of a light emitting device including an electrode structure,
9 is a view illustrating an embodiment of a light emitting device package in which a light emitting device is disposed;
10 is a view showing an embodiment of a lighting device in which a light emitting element is disposed;
11 is a diagram illustrating an embodiment of an image display device in which a light emitting device is disposed.

Hereinafter, with reference to the accompanying drawings an embodiment of the present invention that can specifically realize the above object.

In the description of the embodiment according to the present invention, when described as being formed on the "on or under" of each element, the above (on) or below (on) or under) includes both two elements being directly contacted with each other or one or more other elements are formed indirectly between the two elements. In addition, when expressed as “on” or “under”, it may include the meaning of the downward direction as well as the upward direction based on one element.

FIG. 1 is a perspective view of an embodiment of an electrode structure, and FIG. 2 is a view illustrating a region 'A' of FIG. 1.

The electrode structure 100 according to the present embodiment includes a plurality of holes 150 formed between the conductive layer 110 and the conductive layer 100 including a plurality of silver (Ag) particles having a nanoscale diameter. It is done by

The hole 150 is formed to penetrate the conductive layer 110 having a predetermined thickness, and the conductive layer 110 including the silver particles 111 is surrounded by the hole 150. Each of the silver particles 111 may have a size (r 1 ) of 10 nanometers to 50 nanometers. The size (r 1 ) of the silver particles 111 refers to a diameter when the silver particles 111 are spherical. As shown in the figure, a hexagon or a quadrangle means the size of a diagonal line or the size of one side. If the size (r 1 ) of the silver particles 111 is too large, it is difficult to densely deposit on the silica pattern in the process described later, and dense on the silica pattern without making the size less than 10 nanometers Is enough to stack.

In FIG. 2, the silver particle fired body 115 is disposed. When the silver particles 111 are fired in the firing process, some of the silver particles 111 are completely melted so that two or more silver particles 111 are formed in a lump. The particle calcined body 115 may be formed. The size r 2 of the silver particle fired body 115 means a diameter when the silver particle fired body 115 is spherical, and the size of one side of the silver particle fired body 115.

The above-described shape of the silver particles 111 may be spherical under a polygon such as a rectangle or a hexagon. The silver particles 111 may be disposed in contact with each other through a firing process so that the shape of the neighboring silver particles 111 is constant. In some regions, the silver particle fired body 115 is disposed as shown, and the size r 2 of the silver particle fired body 115 is equal to 2 of the size r 1 of the silver particle 111. It can be three times to three times.

3 is a cross-sectional view of the II ′ axis of FIG. 1. The structure of the hole 150 will be described in detail with reference to FIG. 3.

In this embodiment, the hole 150 is disposed between the silver particles 111 and the conductive layer 110 made of the silver particle fired body 115, which is not shown, but is disposed on both sides of the conductive layer 110. In the size of the opening of the hole 150 may be different. The difference in the size of the openings described above may occur because the silver particles inject the solution onto the spherical silica pattern in the process described below.

There hole 150 may be formed of the inner surface (f i) which is in contact with the opening of the first face (f 1) and the opening (f 2) and the conductive layer 110 of the second surface of the conductive layer 110, The first surface and the second surface mean side surfaces of the conductive layer 110 in opposite directions.

The size R 1 of the opening f 1 of the first surface of the conductive layer 110 may be larger than the size R 2 of the opening f 2 of the second surface, and each of the openings f 1 may be larger. , f 2 ) can be round or elliptical. The size of the opening may gradually increase from the opening f 1 of the first surface to the opening f 2 of the second surface.

In addition, the inner surface f i of the hole 150 in contact with the conductive layer 110 may form a part of the outer circumferential surface of the sphere, as shown in the cross section of the inner surface f i . Can make an arc of a circle. Here, the shape of the outer circumferential surface of the sphere and the arc of the circle does not mean a geometrically perfect shape, and the shape of the line or plane that forms the boundary between the hole 150 and the conductive layer 110 is defined by the shape of the concave surface of the sphere or the arc of the circle. It means very similar.

The thickness t of the conductive layer 110 may be 30 nanometers to 200 nanometers, and the silver particles 111 may be disposed in the conductive layer 110 in two to three layers or more layers. The silver particles 111 described above may be uniform in size or may have a difference from each other.

In the conductive layer 110, the silver particles 111 may be disposed in two to three layers, and in the case of the silver particles 111 having a size of 10 nanometers, the silver particles 111 may be disposed in three layers and have a size of 50 nanometers. In the case of the silver particles 111 having a may be disposed in two layers.

4 illustrates an arrangement of holes of an electrode structure.

In the electrode structure 110, a plurality of holes 150 are disposed between the conductive layers 110, and each hole 150 may be disposed in a column and a row.

In FIG. 4, the holes h 11 ˜ h 15 arranged in the first row from above, the holes h 31 ˜ h 35 arranged in the third row, and the holes h 51 ˜ h 55 arranged in the fifth column are vertical. The holes h 21 ˜ h 24 arranged in the same direction as each other and the holes h 41 ˜ h 44 arranged in the third row may also be arranged to match each other in the vertical direction. However, the holes h 11 ˜ h 15 disposed in the first row and the holes h 21 ˜ h 24 disposed in the second row are alternately disposed so that the holes 150 disposed in the first through fifth rows It may be arranged alternately with each other.

The arrangement of the holes 150 in the plurality of rows may be the same when the holes 150 of the electrode structure 100 are viewed in the column direction.

5 is a view showing the light transmittance according to the wavelength of the electrode structure described above.

As the ITO shown in the comparative example has a shorter wavelength, the light transmittance decreases, so that the light transmittance is lower than that of the electrode structure described above in the wavelength range of 450 nanometers or less. This is because the light transmittance is shown, and unlike ITO, holes are disposed between the silver particles, which may be advantageous for light transmission. In addition, the sheet resistance is also 100 Ω (Ω) or less, so that the current spreading effect can be improved.

6A to 6I illustrate an embodiment of a process of manufacturing an electrode structure.

As shown in FIG. 6A, at least two layers of polystyrene 20 are disposed on the first substrate 10. The first substrate 10 may be glass or the like. The polystyrene (20) may be arranged in a lattice structure, and may be applied to the surface of the polystyrene (20) to facilitate the separation of the PDMS mold later. The diameters and sizes of each of the grids of polystyrene 20 may be 1.0 micrometers, 1.5 micrometers and 2.0 micrometers, which may be used for the polystyrene 3 of 10 nanometers or less and 100 micrometers or less.

In FIG. 6B, a polydimethylsiloxane (PDMS) mold 30 may be disposed and pressed on the lattice structure of the polysteraene 20 on the first substrate 10.

In FIG. 6C, the PDMS mold 30 is separated, and the shape of the surface of the polystyrene 20 on the first substrate 10 may be transferred to the PDMS mold 30. Here, the first pattern 35 formed on the PDMS mold 30 may have a shape of the surface of the polystyrene 20.

6D, a silica sol 50 is coated on the second substrate 40 by spin coating or the like.

As shown in FIG. 6E, the PDMS mold 30 having the first pattern 35 in FIG. 6C is disposed on the second substrate 40 coated with the silica sol 50 provided in FIG. 6D, and the pressure is applied. do. The second substrate 40 may be a light transmissive substrate or an opaque substrate. In the case of the light transmissive substrate, the second substrate 40 may be a PET film or a PAR film. As the second substrate 40, a substrate on which deformation does not occur in a processing step such as temperature described later may be used.

When the light-transmissive substrate is used as the second substrate 40, the second substrate 40 may be directly disposed on the light emitting structure made of GaN of the light emitting device without removing the second substrate 40 in the process described below, and used as the first electrode or the second electrode.

In this case, when the process is performed for 5 to 15 minutes at a temperature of 60 degrees to 80 degrees Celsius, the silica sol 50 may be cured together with the transfer of the pattern described in FIG. 6F.

When the PDMS mold 30 is separated as shown in FIG. 6F, a second pattern 55 is formed on the silica sol 50, and the second pattern 55 is formed by the first pattern 35. It may have the same shape as the taraene 20 lattice structure.

As shown in FIG. 6G, the silicon sol 50 having the second pattern 55 is disposed on the second substrate 40 in the vertical direction, and the third substrate 60 is in contact with the second pattern 55. After the arrangement, a solution containing silver (Ag) particles is injected between the second substrate 40 and the third substrate 60. In this case, silver particles may be disposed on the surface of the second pattern 55 on the surface of the silica sol 50, and the second substrate 40 is raised at a speed of 0.5 to 0.6 millimeters per minute. When heat is applied in a manner such as blowing hot air toward the second substrate 40, the solvent around the silver particles is evaporated, and the silver particles on the surface of the silica sol 50 may be gradually cooled and hardened. have. In this case, the heat supplied in the direction of the second substrate 40 may have a temperature of 30 degrees to 90 degrees, and if the temperature is too low, it is not sufficient for evaporation of the solvent. May not be achieved correctly.

When the second substrate 40 is removed, silver (Ag) particles are disposed around the third pattern 55 on the silica sol 50. Since silver (Ag) particles are disposed only on the surface of the third pattern 55 described above, a cross-sectional structure as shown in FIG. 3 is formed, and in FIG. 6H, silica sol 50 is disposed on the bottom of the silver (Ag) particles. have.

In addition, when the silica sol 50 and the third pattern 55 are removed and fired using hydrofluoric acid (HF), the electrode structure shown in FIG. 6I remains, and the firing process is performed for 20 minutes at a temperature of 130 to 200 degrees Celsius. 40 minutes can be made.

The electrode structure including silver (Ag) prepared by the above-described process may be used for OLED or other transparent display in addition to the light emitting device as follows. In addition, the above-described silica sol pattern may be directly manufactured to a light emitting structure made of GaN or the like without using the second substrate 40, and the pattern may be formed of silver (Ag), and then the silica sol or the like may be removed to form an electrode structure. It may be.

7 and 8 are views illustrating one embodiment of a light emitting device including an electrode structure.

In the horizontal light emitting device 200a illustrated in FIG. 7, a buffer layer 215 and a light emitting structure 220 are disposed on a substrate 210.

The substrate 210 may be formed of a material suitable for growth of a semiconductor material or a carrier wafer, may be formed of a material having excellent thermal conductivity, and may include a conductive substrate or an insulating substrate. For example, at least one of sapphire (Al 2 O 3 ), SiO 2 , SiC, Si, GaAs, GaN, ZnO, GaP, InP, Ge, Ga 2 O 3 may be used.

The buffer layer 215 is used to mitigate the difference in lattice mismatch and thermal expansion coefficient of the material between the substrate 210 and the light emitting structure 220 in this embodiment, and the substrate 210 and the light emitting structure in addition to the above-described buffer layer. It may be another buffer layer disposed between the 220 and the same in other embodiments described later. The material of the buffer layer 215 may be formed of at least one of a group III-V compound semiconductor, for example, AlAs, GaN, InN, InGaN, AlGaN, InAlGaN, and AlInN.

When the substrate 210 is formed of sapphire or the like, and the light emitting structure 220 including GaN or AlGaN is disposed on the substrate 210, lattice mismatch between GaN or AlGaN and sapphire is very large and these The difference in coefficient of thermal expansion between them is so large that dislocations, melt-backs, cracks, pits, and surface morphology defects may deteriorate crystallinity. Therefore, AlN can be used as the buffer layer 215.

Although not shown, an undoped GaN layer or an AlGaN layer may be disposed between the buffer layer 215 and the light emitting structure 220 to prevent the above-described potential from being transferred into the light emitting structure 220. In addition, dislocations are blocked in the buffer layer 2150 to allow growth of a high quality / high crystalline buffer layer.

The light emitting structure 220 includes a first conductive semiconductor layer 222, an active layer 224, and a second conductive semiconductor layer 226.

The first conductive semiconductor layer 242 may be implemented with compound semiconductors such as group III-V and group II-VI, and may be doped with the first conductive dopant. For example, the first conductivity type semiconductor layer 242 has a composition formula of Al x In y Ga (1-xy) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). It may be formed of any one or more of a semiconductor material, AlGaN, GaN, InAlGaN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP.

When the first conductivity type semiconductor layer 222 is an n type semiconductor layer, the first conductivity type dopant may include an n type dopant such as Si, Ge, Sn, Se, Te, or the like. The first conductivity type semiconductor layer 222 may be formed as a single layer or a multilayer, but is not limited thereto.

When the light emitting device 200a illustrated in FIG. 7 is an ultraviolet (UV) light, deep ultraviolet light, or a non-polarization light emitting device, the first conductive semiconductor layer 222 may include at least one of InAlGaN and AlGaN. In addition, when the first conductivity-type semiconductor layer 222 is made of AlGaN, the content of Al may be 50%. When the potential generated in the substrate or the buffer layer is transferred to the active layer, since the deep ultraviolet light emitting device may not use In in the active layer, defects caused by the potential cannot be buffered, and thus the action of the air void described above is particularly important. In addition, since deep ultraviolet light is absorbed by GaN in the deep ultraviolet light emitting device, AlGaN may be used as a material of the light emitting structure.

The active layer 224 is disposed between the first conductivity type semiconductor layer 222 and the second conductivity type semiconductor layer 226, and has a single well structure, a multi well structure, a single quantum well structure, and a multi quantum well. A multi-quantum well (MQW) structure, a quantum dot structure or a quantum line structure may be included.

The active layer 224 may be formed of a well layer and a barrier layer, for example, AlGaN / AlGaN, InGaN / GaN, InGaN / InGaN, AlGaN / GaN, InAlGaN / GaN, GaAs (InGaAs) using a compound semiconductor material of a group III-V element. It may be formed of any one or more of the structure, / AlGaAs, GaP (InGaP) / AlGaP, but is not limited thereto. The well layer may be formed of a material having an energy band gap smaller than the energy band gap of the barrier layer. In particular, the active layer 224 according to the embodiment may generate light of ultraviolet rays, near-ultraviolet or deep-ultraviolet wavelengths.

The second conductivity type semiconductor layer 226 may be formed of a semiconductor compound. The second conductive semiconductor layer 226 may be formed of a compound semiconductor such as a III-V group or a II-VI group, and may be doped with a second conductive dopant. The second conductivity-type semiconductor layer 226 is, for example, a semiconductor material having a compositional formula of In x Al y Ga 1- xy N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1), AlGaN , GaN AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP may be formed of any one or more.

When the second conductive semiconductor layer 226 is a p-type semiconductor layer, the second conductive dopant may be a p-type dopant such as Mg, Zn, Ca, Sr, or Ba. The second conductivity-type semiconductor layer 226 may be formed as a single layer or a multilayer, but is not limited thereto. If the light emitting device 200a is an ultraviolet (UV) light, deep ultraviolet light, or a non-polarization light emitting device, the second conductive semiconductor layer 226 may include at least one of InAlGaN and AlGaN.

The light-transmissive conductive layer 240 may be disposed on the light emitting structure 220. The light-transmissive conductive layer 240 may be the above-described electrode structure, and in this case, the light-transmitting conductive layer 240 may be fixed using an electrode structure as an adhesion layer or the like. .

When the substrate 210 is an insulating substrate, in order to supply a current to the first conductivity type semiconductor layer 222, mesa-etched from the transmissive conductive layer 240 to a part of the first conductivity type semiconductor layer 222 and thus the first conductivity. A portion of the type semiconductor layer 222 may be exposed.

The first electrode 250 may be disposed on the exposed first conductive semiconductor layer 222, and the second electrode 260 may be disposed on the transparent conductive layer 240. In this case, at least one of the second electrode 250 or the second electrode 260 may be the above-described electrode structure.

In the light emitting device 200a according to the present exemplary embodiment, the above-described high light transmittance and low resistance electrode structures are disposed on the light emitting structures, or the first and second electrodes are formed to cover the entire area of the first conductive semiconductor layer and the second conductive semiconductor layer. By supplying a current to the light absorbing of the electrode structure is also reduced, the light efficiency of the light emitting device can be improved.

The configuration and composition of the light emitting structure 220 in the vertical light emitting device 200b shown in FIG. 8 is the same as the horizontal light emitting device 200a shown in FIG. 7. However, irregularities may be formed on the surface of the first conductive semiconductor layer 222 to improve the light extraction effect, and the first electrode 250 may have a surface of the first conductive semiconductor layer 222 on which the irregularities are not formed. Can be placed in.

The light emitting structure 220 may include an ohmic layer 272, a reflective layer 274, a bonding layer 276, and a conductive support substrate 278 on the second conductive semiconductor layer 226. The reflective layer 274, the bonding layer 276, and the conductive support substrate 278 may serve as the second electrode.

The ohmic layer 272 may be about 200 angstroms thick. The ohmic layer 272 may include indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IZAZO), indium gallium zinc oxide (IGZO), and indium gallium tin oxide (IGTO). ), Aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZON (IZO Nitride), AGZO (Al-Ga ZnO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx , NiO, RuOx / ITO, Ni / IrOx / Au, and Ni / IrOx / Au / ITO, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Sn, In, Ru, Mg, Zn, Pt, It may be formed including at least one of Au and Hf, but is not limited to these materials.

The reflective layer 274 may be formed of a metal layer including aluminum (Al), silver (Ag), nickel (Ni), platinum (Pt), rhodium (Rh), or an alloy containing Al, Ag, Pt, or Rh. . Aluminum or silver may effectively reflect light generated from the active layer 244 to greatly improve the light extraction efficiency of the light emitting device.

The conductive support substrate 278 may use a metal having excellent electrical conductivity, and a metal having high thermal conductivity may be used because it must be able to sufficiently dissipate heat generated during operation of the light emitting device.

The conductive support substrate 278 may be formed of a metal or a semiconductor material. It may also be formed of a material having high electrical conductivity and thermal conductivity. For example, it may be made of a material selected from the group consisting of molybdenum (Mo), silicon (Si), tungsten (W), copper (Cu), and aluminum (Al) or alloys thereof, and also gold (Au). ), Copper alloy (Cu Alloy), nickel (Ni), copper-tungsten (Cu-W), carrier wafers (e.g. GaN, Si, Ge, GaAs, ZnO, SiGe, SiC, SiGe, Ga 2 O 3, etc.) And the like may optionally be included.

The conductive support substrate 278 may have a mechanical strength enough to separate well into separate chips through a scribing process and a breaking process without causing warping of the entire nitride semiconductor.

The bonding layer 276 couples the reflective layer 274 and the conductive support substrate 278, and includes gold (Au), tin (Sn), indium (In), aluminum (Al), silicon (Si), and silver (Ag). , Nickel (Ni) and copper (Cu) can be formed of a material selected from the group consisting of or alloys thereof.

The passivation layer 290 may be disposed around the light emitting structure 220. The passivation layer 290 may be made of an insulating material, and the insulating material may be made of an oxide or nitride which is non-conductive. As an example, the passivation layer 280 may include a silicon oxide (SiO 2 ) layer, an oxynitride layer, and an aluminum oxide layer.

In this embodiment, the electrode, in particular, the first electrode 250 may be the above-described electrode structure. Therefore, in the light emitting device 200b, the above-described high light transmittance and low resistance electrode structure forms a first electrode, supplies a current to the entire area of the first conductivity type semiconductor layer, and reduces light absorption in the electrode structure. The light efficiency of the light emitting device can be improved.

When the electrode structures are arranged in FIGS. 7 and 8, the above-described second opening is closer to the light emitting structure, that is, the distance between the second opening and the light emitting structure is greater than the distance between the first opening and the light emitting structure. It can be arranged small. That is, since the opening is narrower in the region adjacent to the active layer and wider in the region disposed farther from the active layer, the opening may be extended to the outside of the light emitting device of the light emitted from the active layer, thereby increasing the direction angle.

9 is a diagram illustrating an embodiment of a light emitting device package in which a light emitting device is disposed.

The light emitting device package 300 according to the embodiment is a flip chip type light emitting device package, and includes a body 310 including a cavity, a first lead frame 321 and a second installed in the body 310. A light emitting device 200 according to the above-described embodiments installed in the lead frame 322 and the body 310 and electrically connected to the first lead frame 321 and the second lead frame 322; It includes a molding unit 350 formed in the cavity.

The body 310 may include a silicon material, a synthetic resin material, or a metal material. When the body 310 is made of a conductive material such as a metal material, although not shown, an insulating layer is coated on the surface of the body 310 to prevent an electrical short between the first and second lead frames 321 and 322. Can be.

The first lead frame 321 and the second lead frame 322 are electrically separated from each other, and supplies a current to the light emitting device 200. In addition, the first lead frame 321 and the second lead frame 322 may increase the light efficiency by reflecting the light generated from the light emitting device 200, the heat generated from the light emitting device 200 to the outside It can also be discharged.

The light emitting device 200 may be electrically connected to the first lead frame 321 and the second lead frame 322 by a ball solder 340.

The molding part 350 may surround and protect the light emitting device 200. In addition, the phosphor 360 is conformally coated in a separate layer from the molding part 350 on the molding part 350. In this structure, the phosphor 360 may be distributed to convert the wavelength of the light emitted from the light emitting device 200 in the entire region where the light of the light emitting device package 300 is emitted.

The light of the first wavelength region emitted from the light emitting device 200 is excited by the phosphor 360 and converted into the light of the second wavelength region, and the light of the second wavelength region passes through the lens (not shown). The light path can be changed.

In the light emitting device 200 of the light emitting device package 300 according to the present embodiment, the above-described high light transmittance and low resistance electrode structure is disposed on the light emitting structure or forms first and second electrodes, thereby forming a first conductive semiconductor layer and a first conductive layer. The current is supplied to the entire area of the two-conducting semiconductor layer, and the absorption of light in the electrode structure is also reduced, thereby improving the light efficiency of the light emitting device.

The light emitting device package 300 may be mounted as one or a plurality of light emitting devices according to the above embodiments, but is not limited thereto.

A plurality of light emitting device packages according to the embodiment may be arranged on a substrate, and a light guide plate, a prism sheet, a diffusion sheet, or the like, which is an optical member, may be disposed on an optical path of the light emitting device package. The light emitting device package, the substrate, and the optical member may function as a light unit. Another embodiment may be implemented as a display device, an indicator device, or a lighting system including the semiconductor light emitting device or the light emitting device package described in the above embodiments, and for example, the lighting system may include a lamp or a street lamp. . Hereinafter, a head lamp and a backlight unit will be described as an embodiment of the lighting system in which the above-described light emitting device package is disposed.

10 is a diagram illustrating an embodiment of a head lamp in which a light emitting device package is disposed.

The head lamp 400 according to the embodiment is a light emitted from the light emitting device module 401 in which the light emitting device package is disposed is reflected in the reflector 402 and the shade 403 and then transmitted through the lens 404 to the front of the vehicle body. Can head.

In the light emitting device used in the light emitting device module 401, an electrode structure having a high light transmittance and a low resistance is disposed on the light emitting structure or constitutes first and second electrodes, so that the entire area of the first conductive semiconductor layer and the second conductive semiconductor layer is formed. By supplying a current to the light absorbing of the electrode structure is also reduced, the light efficiency of the light emitting device can be improved.

11 is a diagram illustrating an embodiment of an image display device in which a light emitting device is disposed.

As shown, the image display device 500 according to the present exemplary embodiment includes a light source module, a reflector 520 on the bottom cover 510, and light disposed in front of the reflector 520 and emitted from the light source module. The light guide plate 540 for guiding the front of the image display device, the first prism sheet 550 and the second prism sheet 560 disposed in front of the light guide plate 540, and the second prism sheet 560. And a color filter 580 disposed in front of the panel 570 disposed in front of the panel 570.

The light source module includes a light emitting device package 535 on the circuit board 530. Here, a circuit board (PCB) may be used as the circuit board 530, and the light emitting device package 535 is as described with reference to FIG. 8.

The bottom cover 510 may accommodate components in the image display apparatus 500. The reflecting plate 520 may be provided as a separate component as shown in the figure, or may be provided in the form of coating with a highly reflective material on the back of the light guide plate 540 or the front of the bottom cover 510.

The reflective plate 520 may use a material having a high reflectance and being extremely thin, and may use polyethylene terephthalate (PET).

The light guide plate 540 scatters light emitted from the light emitting device package module so that the light is uniformly distributed over the entire area of the screen of the liquid crystal display. Therefore, the light guide plate 530 is made of a material having a good refractive index and a high transmittance, and may be formed of polymethyl methacrylate (PMMA), polycarbonate (PC), polyethylene (PE), or the like. In addition, when the light guide plate 540 is omitted, an air guide type display device may be implemented.

The first prism sheet 550 is formed of a translucent and elastic polymer material on one surface of the support film, and the polymer may have a prism layer in which a plurality of three-dimensional structures are repeatedly formed. Here, the plurality of patterns may be provided in the stripe type and the valley repeatedly as shown.

In the second prism sheet 560, the direction of the floor and the valley of one surface of the support film may be perpendicular to the direction of the floor and the valley of one surface of the support film in the first prism sheet 550. This is to evenly distribute the light transmitted from the light source module and the reflective sheet in all directions of the panel 570.

In the present embodiment, the first prism sheet 550 and the second prism sheet 560 form an optical sheet, and the optical sheet is formed of another combination, for example, a micro lens array or a diffusion sheet and a micro lens array. Or a combination of one prism sheet and a micro lens array.

The liquid crystal display panel (Liquid Crystal Display) may be disposed on the panel 570, and in addition to the liquid crystal display panel 560, another type of display device requiring a light source may be provided.

The panel 570 is a state in which a liquid crystal is located between the glass bodies and the polarizing plates are placed on both glass bodies in order to use polarization of light. Herein, the liquid crystal has an intermediate characteristic between a liquid and a solid. The liquid crystal, which is an organic molecule having fluidity, like a liquid, has a state in which the liquid crystal is regularly arranged like a crystal. Display an image.

The liquid crystal display panel used in the display device uses a transistor as an active matrix method as a switch for adjusting a voltage supplied to each pixel.

The front surface of the panel 570 is provided with a color filter 580 transmits the light projected by the panel 570, only the red, green and blue light for each pixel can represent the image.

In the light emitting device disposed in the image display device according to the present exemplary embodiment, an electrode structure having a high light transmittance and a low resistance is disposed on the light emitting structure or constitutes first and second electrodes, thereby forming a first conductive semiconductor layer and a second conductive semiconductor layer. The current is supplied to the entire area, and the absorption of light in the electrode structure is also reduced, so that the light efficiency of the light emitting device can be improved.

Although the above description has been made based on the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains may not have been exemplified above without departing from the essential characteristics of the present embodiments. It will be appreciated that many variations and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

10: first substrate 20: poly styrene
30: PDMS mold 35: first pattern
40: second substrate 50: silica sol
55: second pattern 60: third substrate
100: electrode structure 110: conductive layer
111: silver particles 115: silver particle fired body
150: hole 200, 200a, 200b: light emitting element
215: buffer layer 220: light emitting structure
222: first conductive semiconductor layer 224: active layer
226: second conductive semiconductor layer 240: translucent conductive layer
250: first electrode 260: second electrode

Claims (12)

A conductive layer comprising a plurality of silver (Ag) particles having a nanoscale size; And
It includes a plurality of holes formed between the conductive layer,
The conductive layer includes a particle firing body in which at least two silver particles form a single mass, and the plurality of holes include a first opening disposed on a first surface of the conductive layer and a first opposite direction to the first surface. And a second opening disposed on two surfaces, wherein at least one of the plurality of holes has a size larger than that of the second opening and the diameter of the hole increases from the second opening to the first opening. And a region of which the transmittance of light transmitted through the conductive layer and the plurality of holes is 80% or more. According to claim 1,
The shape of the cross section of the inner surface of the hole connecting the first opening and the second opening portion comprises a curve. The method of claim 2,
The silver particles have a size of 10 nanometers to 50 nanometers, and the conductive layer has a thickness of 30 nanometers to 200 nanometers. According to claim 1,
An electrode structure having a sheet resistance of 100 ohm or less formed with a conductive semiconductor layer. According to claim 1,
The conductive layer has the silver particles disposed in two to three layers, the size of the particle body is an electrode structure of 2 to 3 times the size of the silver particles. According to claim 1,
And the plurality of holes are arranged in a row and a row, and the holes disposed in the adjacent column or row are alternately disposed. A light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer;
First and second electrodes disposed on the first conductive semiconductor layer and the second conductive semiconductor layer, respectively; And
A light emitting device comprising the electrode structure of any one of claims 1 to 6 disposed between at least one of the first electrode and the second electrode and the light emitting structure. The light emitting device of claim 7, wherein the electrode structure is disposed between the second conductivity type semiconductor layer and the second electrode. The method of claim 7, wherein
And a second opening of the electrode structure is closer to the active layer than the first opening. The method of claim 7, wherein
A light emitting device for emitting light in the ultraviolet, near ultraviolet or deep ultraviolet wavelength range from the active layer. delete delete
KR1020120120671A 2012-10-29 2012-10-29 Electrode structure and light emitting device including the same KR101972048B1 (en)

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Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2005260245A (en) 2004-03-12 2005-09-22 Samsung Electronics Co Ltd Nitride-based light emitting element and its manufacturing method
JP2009231689A (en) 2008-03-25 2009-10-08 Toshiba Corp Semiconductor light emitting device and method of manufacturing the same
JP2012059791A (en) * 2010-09-06 2012-03-22 Toshiba Corp Semiconductor light-emitting element and manufacturing method of the same
JP2012186427A (en) 2011-03-08 2012-09-27 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2005260245A (en) 2004-03-12 2005-09-22 Samsung Electronics Co Ltd Nitride-based light emitting element and its manufacturing method
JP2009231689A (en) 2008-03-25 2009-10-08 Toshiba Corp Semiconductor light emitting device and method of manufacturing the same
JP2012059791A (en) * 2010-09-06 2012-03-22 Toshiba Corp Semiconductor light-emitting element and manufacturing method of the same
JP2012186427A (en) 2011-03-08 2012-09-27 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same

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