KR101964631B1 - A electrostatic chuck - Google Patents

A electrostatic chuck Download PDF

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Publication number
KR101964631B1
KR101964631B1 KR1020180040464A KR20180040464A KR101964631B1 KR 101964631 B1 KR101964631 B1 KR 101964631B1 KR 1020180040464 A KR1020180040464 A KR 1020180040464A KR 20180040464 A KR20180040464 A KR 20180040464A KR 101964631 B1 KR101964631 B1 KR 101964631B1
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South Korea
Prior art keywords
chucking
foam
electrostatic chuck
substrate
electrostatic
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KR1020180040464A
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Korean (ko)
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김현진
박승범
김종식
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(주)아폴로테크
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Priority to KR1020180040464A priority Critical patent/KR101964631B1/en
Priority to JP2018084757A priority patent/JP2019187222A/en
Priority to CN201810390816.8A priority patent/CN110349898A/en
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Publication of KR101964631B1 publication Critical patent/KR101964631B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

Abstract

The present invention relates to an electrostatic chuck with excellent buffer force, which has a cushion unit made of a PE foam material and formed on a lower side of a chucking unit made of a polyimide material, thereby being excellent in buffer force and restoring force and preventing damage to a substrate. According to the present invention, the electrostatic chuck with excellent buffer force includes: a chucking unit supporting the substrate with electrostatic force; a base plate provided on a lower portion of the chucking unit and supporting the chucking unit; and a cushion unit made of the PE foam material and provided between the chucking unit and the base plate to prevent damage to the substrate supported on the chucking unit.

Description

완충력이 우수한 정전척{A ELECTROSTATIC CHUCK}A ELECTROSTATIC CHUCK with excellent buffer capacity

본 발명은 정전척에 관한 것으로서, 보다 상세하게는 폴리이미드 재질의 처킹부 하측에 PE(PolyEthylene) Foam 재질의 쿠션부가 구비되어 완충력과 복원력이 우수하여 기판의 파손을 방지할 수 있는 완충력이 우수한 정전척에 관한 것이다. The present invention relates to an electrostatic chuck, and more particularly, to an electrostatic chuck having a cushion part made of PE (PolyEthylene) foam at the lower side of a chipping part made of polyimide material and having excellent buffering force and restoring force, It is about Chuck.

최근의 차세대 반도체 및 디스플레이패널 공정 장비에는 정전기력을 이용한 정전척이 핵심 부품으로 사용되어 웨이퍼 또는 유리기판를 고정하고 있다. 상기 정전척은 모재(母材)에 통상적으로 2개 이상의 유전층이 형성되고 유전층 사이에 전극이 삽입되어 사용되는 것과, 모재(母材)에 절연층 및 유전층을 형성하고, 절연층 및 유전층 사이에 전극을 삽입하여 사용되는 것 등이 있으며, 전도성을 갖는 전극에 직류전압을 인가하면 유전체의 분극현상에 따라 피처리물인 웨이퍼 또는 유리기판에 반대 극성이 발생됨으로써 피처리물인 웨이퍼 또는 유리기판과 유전체 간에 발생되는 정전기력으로 피처리물인 웨이퍼 또는 유리기판을 고정하는 장치이다.In recent semiconductor and display panel process equipment, electrostatic chuck using electrostatic force is used as a key component to fix wafer or glass substrate. The electrostatic chuck is characterized in that at least two dielectric layers are formed in a base material and an electrode is inserted between the dielectric layers, and an insulating layer and a dielectric layer are formed on the base material, When a DC voltage is applied to an electrode having conductivity, an opposite polarity is generated on a wafer or a glass substrate to be processed according to the polarization of the dielectric, so that a wafer or glass substrate to be processed and a dielectric And fixes the wafer or glass substrate to be processed by the generated electrostatic force.

한편, 종래에는 액정 패널용 기판의 크기에 대응하도록 일변이 1000mm 이상되는 정전척을 단일화된 부품으로 사용하였다. 이 경우, 종래의 단일 정전척은 세라믹 또는 금속제와 같은 경도가 높은 재질로 제조되어, 단일 정전 흡착 장치의 평면을 균일하게 가공하기 힘들었다. 따라서 액정 패널용 기판을 가공 시, 상기 액정 패널용 기판에는 불균일한 하중이 인가되고, 상기 액정 패널용 기판이 종종 파손되곤 하였다.Meanwhile, conventionally, an electrostatic chuck having a length of 1,000 mm or more on one side is used as a single component so as to correspond to the size of a substrate for a liquid crystal panel. In this case, the conventional single electrostatic chuck is made of a hard material such as ceramic or metal, and it is difficult to uniformly process the plane of the single electrostatic adsorption device. Therefore, when the substrate for a liquid crystal panel is processed, a non-uniform load is applied to the substrate for the liquid crystal panel, and the substrate for the liquid crystal panel is often broken.

나아가, 종래의 정전 흡착 장치는 그 제조 자체의 비용도 높으며, 가공 시 평탄도의 균일성을 갖게 하기 위하여 상당한 비용과 가공 시간이 소요되고, 제품의 불량도가 높다. 이에 따라, 소형의 정전척들을 조립식으로 나열하여 대형기판을 흡착할 수 있는 조립형 정전 흡착 장치의 개발이 요구되어 왔다. 그러나 경도가 높은 세라믹이나 금속재의 지지기재가 적용된 정전척들을 조립하여 이용할 경우, 각각의 정전척의 가공치수가 다른 것과 각각의 정전 흡착력이 상이하여 전술한 단일 정전 흡착 장치의 문제점을 해결하지 못하고 있는 상황이다.In addition, the conventional electrostatic adsorption apparatus has a high manufacturing cost and requires considerable cost and processing time for uniformity of flatness during processing, and the degree of defective products is high. Accordingly, there has been a demand for development of an assembled electrostatic adsorption apparatus capable of adsorbing a large substrate by arranging small electrostatic chucks in a prefabricated manner. However, when the electrostatic chucks to which the supporting substrate of ceramic or metal material having high hardness is assembled are used, the electrostatic chucks of different electrostatic chucks are different from each other and the problems of the single electrostatic chucking device described above can not be solved to be.

현재, 정전 척킹 방식은 디스플레이 산업뿐만 아니라 반도체 산업에서도 널리 사용되고 있다. 그러나 전술한 바와 같은 문제들이 웨이퍼를 정전 척킹 하는 경우에도 거의 동일하게 발생되어 고가의 웨이퍼가 손상되는 사고도 종종 발생되고 있는 실정이다.At present, electrostatic chucking is widely used not only in the display industry but also in the semiconductor industry. However, the above-described problems are almost the same even when the wafer is electrostatic chucked, and expensive wafers are often damaged.

따라서 정전척 내에 완충부재가 구비되어 이러한 문제점을 해결할 수 있는 정전척에 관한 기술이 대한민국공개특허제10-2007-99188호에 개시되어 있으나, 충분한 완충력을 확보하지 못하여 기판에 가해지는 하중을 제대로 흡수하지 못하는 문제점이 여전히 남아 있다. Therefore, although a technique relating to an electrostatic chuck capable of solving such a problem that a buffer member is provided in the electrostatic chuck is disclosed in Korean Patent Laid-open Publication No. 10-2007-99188, since a sufficient buffering force can not be secured, the load applied to the substrate is absorbed There is still a problem that can not be done.

본 발명이 해결하고자 하는 기술적 과제는 폴리이미드 재질의 처킹부 하측에 PE Foam 재질의 쿠션부가 구비되어 완충력과 복원력이 우수하여 기판의 파손을 방지할 수 있는 완충력이 우수한 정전척을 제공하는 것이다. Disclosure of Invention Technical Problem [8] Accordingly, the present invention has been made in view of the above problems, and it is an object of the present invention to provide an electrostatic chuck having a cushion part of a PE foam material under a chucking part of a polyimide material, excellent in buffering force and restoring force,

전술한 기술적 과제를 해결하기 위한 본 발명에 따른 완충력이 우수한 정전척은 정전기력으로 기판을 지지하는 처킹부; 상기 처킹부 하부에 배치되어 상기 처킹부를 지지하는 베이스 플레이트; 플라스틱 폼 계열의 소재로 이루어지며, 상기 처킹부와 베이스 플레이트 사이에 구비되어 상기 처킹부에 지지되는 기판의 파손을 방지하는 쿠션부;를 포함한다. According to an aspect of the present invention, there is provided an electrostatic chuck comprising: a chucking part for supporting a substrate by an electrostatic force; A base plate disposed below the chucking portion to support the chucking portion; And a cushion part made of a plastic foam type material and provided between the chucking part and the base plate to prevent breakage of the substrate supported by the chucking part.

그리고 본 발명에서 상기 쿠션부는 0.1 ~ 1mm의 두께를 가지는 것이 바람직하다. In the present invention, it is preferable that the cushion part has a thickness of 0.1 to 1 mm.

또한 본 발명에서 상기 쿠션부는 PE Foam으로 이루어지는 것이 바람직하다. In the present invention, it is preferable that the cushion portion comprises a PE foam.

또한 본 발명에서 상기 쿠션부는, 변형률이 25%일 때 압축 강도가 0.1 ~ 3 kgf/cm2인 것이 바람직하다. In the present invention, it is preferable that the cushion part has a compressive strength of 0.1 to 3 kgf / cm 2 when the strain is 25%.

본 발명에 따른 정전척에 따르면 폴리이미드 재질의 처킹부 하측에 PE Foam 재질의 쿠션부가 구비되어 완충력과 복원력이 우수하여 기판의 파손을 방지할 수 있는 현저한 효과를 달성할 수 있다. According to the electrostatic chuck according to the present invention, a cushion part made of a PE foam material is provided below the chucking part of the polyimide material, so that a remarkable effect of preventing the breakage of the substrate can be achieved by having excellent buffering force and restoring force.

도 1은 본 발명의 일 실시예에 따른 완충력이 우수한 정전척의 구조를 도시하는 모식 단면도이다.
도 2, 3은 본 발명의 일 실시예에 따른 PE foam 소재의 두께별 응력-변형률 곡선을 도시한 그래프들이다. 1 is a schematic cross-sectional view showing a structure of an electrostatic chuck having excellent buffering force according to an embodiment of the present invention.
FIGS. 2 and 3 are graphs showing stress-strain curves of the PE foam material according to an embodiment of the present invention.

이하에서는 첨부된 도면을 참조하여 본 발명의 구체적인 실시예를 상세하게 설명한다. Hereinafter, a specific embodiment of the present invention will be described in detail with reference to the accompanying drawings.

본 실시예에 따른 완충력이 우수한 정전척(1)은, 도 1에 도시된 바와 같이, 처킹부(10), 베이스 플레이트(20) 및 쿠션부(30)를 포함하여 구성될 수 있다. The electrostatic chuck 1 having excellent buffering force according to the present embodiment can be configured to include the chucking portion 10, the base plate 20 and the cushion portion 30 as shown in Fig.

먼저 상기 처킹부(10)는 정전기력을 기판을 고정 및 지지하는 구성요소로서 정전기력을 발생할 수 있는 구조를 가진다. 구체적으로 상기 처킹부(10)는 도 1에 도시된 바와 같이, 상하에 각각 유전층(11, 12)이 구비된 상태에서 상하 유전층(11, 12) 사이에 전극층(13)이 구비되는 구조를 가질 수 있다. 상기 유전층들(11, 12)은 폴리이미드(Poly Imide) 재질로 이루어진 필름이 바람직하며, 두께는 약 20 ~ 100㎛인 것이 바람직하다. First, the chucking unit 10 has a structure capable of generating an electrostatic force as a component for fixing and supporting an electrostatic force on a substrate. More specifically, the chucking portion 10 has a structure in which the electrode layers 13 are provided between the upper and lower dielectric layers 11 and 12 in the state that the dielectric layers 11 and 12 are provided on the upper and lower sides, respectively, . The dielectric layers 11 and 12 are preferably formed of a polyimide material, and preferably have a thickness of about 20 to 100 μm.

그리고 상기 전극층(13)은 특정한 패턴을 가지도록 형성되며, 별도의 공정에 의하여 성형된 상태에서 상기 상하 유전층(11, 12) 사이에 부착되는 방식으로 설치될 수 있으며, 대표적인 전극재료의 재질인 구리(Cu)를 포함하여 금(Au), 은(Ag), 텅스텐(W), 몰리브덴(Mo), 니켈(Ni) 등으로 이루어지는 것이 바람직하다. The electrode layer 13 is formed to have a specific pattern and can be installed between the upper and lower dielectric layers 11 and 12 in a state of being formed by a separate process. (Au), silver (Ag), tungsten (W), molybdenum (Mo), nickel (Ni), and the like.

다음으로 상기 베이스 플레이트(20)는 도 1에 도시된 바와 같이, 본 실시예에 따른 정전척(1)의 기초를 이루며, 전체적으로 플레이트 형상을 가지는 구성요소로서, 상기 처킹부(10)를 하부에서 지지한다. 따라서 상기 베이스 플레이트(20)는 형상이 변화되지 않는 금속 재질로 이루어지는 것이 바람직하며, 더욱 바람직하게는 알루미늄 재질로 이루어진다. 1, the base plate 20 constitutes the base of the electrostatic chuck 1 according to the present embodiment, and is a component having a plate shape as a whole. The base plate 20 includes the chucking portion 10, . Therefore, the base plate 20 is preferably made of a metal material whose shape is not changed, and more preferably made of an aluminum material.

다음으로 상기 쿠션부(30)는 도 1에 도시된 바와 같이, 상기 처킹부(10)와 베이스 플레이트(20) 사이에 구비되어 상기 처킹부(10)에 지지되는 기판의 파손을 방지하는 구성요소이다. 따라서 상기 쿠션부(30)는 완충력을 가지는 플라스틱 폼 소재로 이루어지며, 예를 들어 PE(PolyEthylene) Foam, PP(PolyPropylene) Foam, Acrylic Foam 및 PU(PolyUrethane) Foam 등의 다공질 소재로 이루어질 수 있다. 1, the cushion part 30 is provided between the chucking part 10 and the base plate 20 to prevent damage to the substrate supported by the chucking part 10, to be. Therefore, the cushion unit 30 is made of a plastic foam material having a buffering force. For example, the cushion unit 30 may be made of a porous material such as PE (PolyEthylene) foam, PP (Polypropylene) foam, Acrylic foam and PU (Polyurethane foam).

특히, 상기 쿠션부(30)는 PE Foam으로 이루어지는 것이, 완충력과 복원력이 우수하여 바람직하다. 이하에서 자세하게 설명한다. Particularly, it is preferable that the cushion portion 30 is made of PE foams because it has excellent buffering force and restoring force. This will be described in detail below.

상기 PE Foam은 변형률 25% 일 때 압축 강도가 0.1 ~ 3 kgf/cm2인 것이 바람직하다. 이때 상기 PE Foam의 두께는 0.1 ~ 1mm인 것이 바람직하다. PE Foam의 두께가 1mm를 초과하는 경우에는 공정 중 피합착물이 충분한 압력을 받는데까지 너무 많은 시간이 걸릴 뿐만아니라 피합착물이 충분한 압력을 받기 어려운 문제점도 있으며, 복원력이 현저히 떨어지는 문제점이 있다. 한편, 0.1mm 미만인 경우에는 완충력이 떨어지는 문제점이 있다. It is preferable that the PE foam has a compressive strength of 0.1 to 3 kgf / cm 2 at a strain of 25%. At this time, the thickness of the PE foams is preferably 0.1 to 1 mm. When the thickness of the PE foams is more than 1 mm, it takes a long time until the complex is sufficiently pressurized during the process, and the resulting composite is difficult to receive sufficient pressure, and the restoring force is significantly reduced. On the other hand, if it is less than 0.1 mm, there is a problem that the buffering force is deteriorated.

또한 본 발명에서 상기 PE Foam은 0.1kgf/cm2의 압력을 가할 때 쿠션 변화량이 1.20%이상인 것이 바람직하다.Also, in the present invention, it is preferable that the PE foam has a cushion change amount of 1.20% or more when a pressure of 0.1 kgf / cm 2 is applied.

이와 같이 상기 쿠션부(30)는 PE foam를 포함하여 PP Foam, Acrylic Foam 및 polyurethane Foam으로 형성하였을 경우, 본 발명자는 실험적으로 그 효과를 하기 표1, 2에서 확인할 수 있었고, 실제 제품 적용을 통하여 동일한 결과를 재확인하였다. 하기 표1, 2는 본 발명의 이해를 돕기 위한 단순한 실험결과이며, 이로써 보 호범위가 제한되거나 한정되는 것은 아님을 밝혀둔다.When the cushion part 30 is formed of a PP foam, an acrylic foam, and a polyurethane foam including a PE foam, the inventors of the present invention experimentally confirmed the effects thereof in Tables 1 and 2, The same results were reaffirmed. The following Tables 1 and 2 are merely experimental results to help understand the present invention, and it should be noted that the scope of protection is not limited or limited.

이러한 PE foam은 도 2, 3에 도시된 바와 같이, 동일한 압축 변형 조건에서 PE Foam의 두께가 두꺼울수록 압축 강도의 힘이 작아서 쿠션의 능력은 향상되나, 두께가 1mm를 초과하는 경우에는 복원력이 낮아지고, 피합착물에 충분한 압력을 가하기가 어렵고 시간이 오래 걸려서 정전척에 부적합한 것이다. As shown in FIGS. 2 and 3, the PE foam has a smaller compressive strength as the thickness of the PE foam is increased under the same compression and deformation conditions. However, when the thickness exceeds 1 mm, the restoring force is low And it is difficult to apply sufficient pressure to the complex to be attached, and it takes a long time and is not suitable for the electrostatic chuck.

20㎛ 변화시 필요 압력(kgf/cm2) Required pressure (kgf / cm 2 ) when changing 20 μm 시편 종류(두께)Specimen Type (Thickness) 변형 비율(%)Deformation ratio (%) 필요 압력Required pressure 비고Remarks PE foam(0.3mm)PE foam (0.3mm) 6.76.7 0.350.35 PE foam(1.0mm)PE foam (1.0mm) 22 0.140.14 실리콘러버(5.0mm)Silicone rubber (5.0mm) 0.400.40 0.10.1 선행특허Precedent patent

가압 압력이 0.1 kgf/cm2 일 때 쿠션 변화량When the pressure is 0.1 kgf / cm 2 , the cushion change amount 시편 종류(두께)Specimen Type (Thickness) 변화량(%)Change (%) 비고Remarks PE foam(0.3mm)PE foam (0.3mm) 1.901.90 PE foam(1.0mm)PE foam (1.0mm) 1.201.20 실리콘러버(5.0mm)Silicone rubber (5.0mm) 0.400.40 선행특허Precedent patent

이러한 특성을 가지는 PE Foam 재질의 쿠션부는 표 1, 2에 기재된 바와 같이, 동일한 양의 변화에 필요한 압력이 선행특허의 실리콘 러버와 비교하여 훨씬 작고, 동일한 압력이 가해졌을 때 변화량이 훨씬 큰 것을 확인할 수 있다. As shown in Tables 1 and 2, the cushion portion of the PE foam material having such characteristics is much smaller than that of the silicone rubber of the prior patent, and the change amount is much larger when the same pressure is applied .

소재의 복원력 비교Comparison of resilience of materials 시편 종류(두께)Specimen Type (Thickness) 변화량(%)Change (%) 비고Remarks PE foam(0.1 ~ 1.0mm)PE foam (0.1 ~ 1.0mm) 2 ~ 5.12 to 5.1 PE foam(0.3 ~ 1.0mm)PE foam (0.3 ~ 1.0mm) 7.67.6 실리콘러버(5.0mm)Silicone rubber (5.0mm) 17 17 선행특허Precedent patent

정전척에 채용되는 쿠션부에 필요한 또 하나의 물성인 복원력을 측정하기 위하여 압축강도 25%일 때의 힘으로 24시간 동안 가압한 후 22시간 동안 대기한 상태에서 두께 변화량을 측정하는 방식을 이용한다. In order to measure the restoring force, which is another physical property required for the cushion part employed in the electrostatic chuck, a method of measuring the thickness change amount in a state of being pressurized for 24 hours under a force of 25% compression strength and then waiting for 22 hours is used.

이 방식으로 복원력을 측정하면 표 3에 도시된 바와 같이, PE foam으로 이루어진 소재가 변형된 값이 작아서 복원력이 가장 우수한 것을 알 수 있다.As shown in Table 3, when the restorative force is measured in this manner, it can be seen that the material made of the PE foam has a small deformed value and thus has the best restoring force.

한편 상기 쿠션부(30)는 상기 베이스 플레이트(10)에 접착층(40)에 의하여 접착되어 설치된다. 마찬가지로 상기 쿠션부(30)와 상기 하부 유전층(12) 사이에도 도 1에 도시된 바와 같이, 접착층(50)이 구비되어 양자를 견고하게 접착한다. Meanwhile, the cushion part 30 is attached to the base plate 10 by an adhesive layer 40. Similarly, an adhesive layer 50 is provided between the cushion portion 30 and the lower dielectric layer 12 to firmly adhere the two.

1 : 본 발명의 실시예에 따른 완충력이 우수한 정전척
10 : 처킹부 20 : 베이스 플레이트
30 : 쿠션부 40 : 접착층1: An electrostatic chuck having excellent buffering force according to the embodiment of the present invention
10: Chucking part 20: Base plate
30: Cushion part 40: Adhesive layer

Claims (3)

정전기력으로 기판을 지지하는 처킹부;
상기 처킹부 하부에 배치되어 상기 처킹부를 지지하는 베이스 플레이트;
0.1 ~ 1mm의 두께를 가지는 PE Foam 재질로 이루어지며, 상기 처킹부와 베이스 플레이트 사이에 구비되어 상기 처킹부에 지지되는 기판의 파손을 방지하는 쿠션부;를 포함하며,
상기 쿠션부는, 변형률이 25%일 때 압축 강도가 0.1 ~ 3 kgf/cm2인 것을 특징으로 하는 완충력이 우수한 정전척.A chucking part for supporting the substrate by electrostatic force;
A base plate disposed below the chucking portion to support the chucking portion;
And a cushion part made of a PE foam material having a thickness of 0.1 to 1 mm and provided between the chucking part and the base plate to prevent breakage of the substrate supported by the chucking part,
Wherein the cushion part has a compressive strength of 0.1 to 3 kgf / cm < 2 > when the strain is 25%. 삭제delete 삭제delete
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