JP2019187222A - Electrostatic chuck excellent in buffering - Google Patents
Electrostatic chuck excellent in buffering Download PDFInfo
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- JP2019187222A JP2019187222A JP2018084757A JP2018084757A JP2019187222A JP 2019187222 A JP2019187222 A JP 2019187222A JP 2018084757 A JP2018084757 A JP 2018084757A JP 2018084757 A JP2018084757 A JP 2018084757A JP 2019187222 A JP2019187222 A JP 2019187222A
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- electrostatic chuck
- chucking
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- buffering
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- 230000003139 buffering effect Effects 0.000 title claims abstract description 14
- -1 polyethylene Polymers 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000004698 Polyethylene Substances 0.000 claims abstract description 20
- 229920000573 polyethylene Polymers 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000002984 plastic foam Substances 0.000 claims abstract description 4
- 239000006260 foam Substances 0.000 claims description 25
- 239000004642 Polyimide Substances 0.000 abstract description 6
- 229920001721 polyimide Polymers 0.000 abstract description 6
- 239000006261 foam material Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229920005830 Polyurethane Foam Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000011496 polyurethane foam Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
本発明は、チャックに係り、更に詳しくは、ポリイミド材質のチャッキング部の下側にポリエチレンフォーム材質のクッション部が配備されて緩衝性及び復元性に優れていることから、基板の破損を防ぐことのできる緩衝性に優れた静電チャックに関する。 The present invention relates to a chuck, and more particularly, a cushioning portion made of a polyethylene foam material is provided under a chucking portion made of a polyimide material and has excellent buffering and restoring properties, thereby preventing damage to the substrate. The present invention relates to an electrostatic chuck with excellent buffering ability.
最近の次世代半導体及びディスプレイパネル工程装備には静電気力を用いたチャックが核心部品として用いられてウェーハ又はガラス基板を固定している。前記チャックとしては、通常、母材に2以上の誘電層が形成され、誘電層の間に電極が挿入されて用いられるものと、母材に絶縁層及び誘電層が形成され、絶縁層及び誘電層の間に電極が挿入されて用いられるものなどが挙げられる。前記チャックは、伝導性を有する電極に直流電圧を印加すれば、誘電体の分極現象により被処理物であるウェーハ又はガラス基板に反対極性が発生することにより、被処理物であるウェーハ又はガラス基板と誘電体との間に発生する静電気力を用いて被処理物であるウェーハ又はガラス基板を固定する装置である。 In the next generation semiconductor and display panel process equipment, a chuck using electrostatic force is used as a core part to fix a wafer or a glass substrate. As the chuck, usually, two or more dielectric layers are formed on a base material and an electrode is inserted between the dielectric layers, and an insulating layer and a dielectric layer are formed on the base material. Examples include those in which an electrode is inserted between the layers. When a DC voltage is applied to the conductive electrode, the chuck generates a wafer or glass substrate that is the object to be processed by generating a reverse polarity in the wafer or glass substrate that is the object to be processed due to a dielectric polarization phenomenon. This is an apparatus for fixing a wafer or a glass substrate as an object to be processed using an electrostatic force generated between the substrate and a dielectric.
一方、従来より、液晶パネル用基板の大きさに対応するように一辺が1000mm以上であるチャックを単一化した部品として用いてきた。この場合、従来の単一チャックは、セラミック又は金属材などの高い硬度を有する材質により製作されて、単一静電吸着装置の平面を均一に加工し難かった。このため、従来より、液晶パネル用基板を加工するとき、前記液晶パネル用基板には不均一な荷重が印加され、前記液晶パネル用基板が破損されることが頻発していた。 On the other hand, conventionally, a chuck having a side of 1000 mm or more has been used as a single component so as to correspond to the size of the substrate for a liquid crystal panel. In this case, the conventional single chuck is made of a material having high hardness such as ceramic or metal material, and it is difficult to uniformly process the plane of the single electrostatic chuck. For this reason, conventionally, when a liquid crystal panel substrate is processed, a non-uniform load is applied to the liquid crystal panel substrate, and the liquid crystal panel substrate is frequently damaged.
更に、従来の静電吸着装置は、その製造コストが高く、加工に際して均一な平坦度を持たせるために高いコスト及び長い加工時間がかかり、製品の不良度が高い。この理由から、従来より、小型のチャックを組立て式に並べて大型基板を吸着可能な組立て型静電吸着装置の開発が求められてきた。しかしながら、高い硬度を有するセラミックや金属材の支持基材が適用されたチャックを組み立てて用いる場合、それぞれのチャックの加工寸法が異なり、且つ、それぞれの静電吸着力が異なるため、上述した単一の静電吸着装置の問題を解消することができないのが現状である。 Furthermore, the conventional electrostatic attraction apparatus has a high manufacturing cost, and takes a high cost and a long processing time to give a uniform flatness during processing, and the degree of product defect is high. For this reason, there has been a demand for the development of an assembly-type electrostatic attraction apparatus capable of adsorbing a large substrate by arranging small chucks in an assembling manner. However, when assembling and using chucks to which a ceramic or metal support substrate having high hardness is applied, the processing dimensions of the chucks are different and the electrostatic adsorption forces are different. The present situation is that it is not possible to solve the problem of the electrostatic adsorption device.
現在、チャッキング方式は、ディスプレイ産業だけではなく、半導体産業においても汎用されている。しかしながら、上述した問題がウェーハをチャッキングする場合にも同様に発生して高価なウェーハが損傷される事故も多発しているのが現状である。 Currently, the chucking method is widely used not only in the display industry but also in the semiconductor industry. However, in the current situation, there are many accidents in which the above-mentioned problem occurs when a wafer is chucked and an expensive wafer is damaged.
したがって、チャック内に緩衝部材が配備されてこのような問題を解消可能なチャックに関する技術が大韓民国公開特許第10−2007−99188号公報に開示されているが、十分な緩衝力を確保することができず、その結果、基板に加えられる荷重を正常に吸収することができないという問題が依然として残されてきた。 Therefore, a technique related to a chuck that can solve such a problem by providing a buffer member in the chuck is disclosed in Korean Patent Laid-Open No. 10-2007-99188. As a result, there still remains a problem that the load applied to the substrate cannot be absorbed normally.
本発明が解決しようとする技術的課題は、ポリイミド材質のチャッキング部の下側にポリエチレンフォーム材質のクッション部が配備されて緩衝性及び復元性に優れていることから、基板の破損を防ぐことのできる緩衝性に優れた静電チャックを提供することである。 The technical problem to be solved by the present invention is to prevent the breakage of the substrate because the cushioning part and the restoring property are excellent because the cushioning part made of polyethylene foam material is arranged under the chucking part made of polyimide material. It is an object to provide an electrostatic chuck having excellent buffering performance.
上述した技術的課題を解決するための本発明に係る緩衝性に優れた静電チャックは、静電気力を用いて基板を支持するチャッキング部と、前記チャッキング部の下部に配置されて前記チャッキング部を支持するベースプレートと、プラスチックフォーム系の素材からなり、前記チャッキング部とベースプレートとの間に配備されて前記チャッキング部に支持される基板の破損を防ぐクッション部と、を備える。 An electrostatic chuck excellent in shock-absorbing property according to the present invention for solving the technical problem described above is provided with a chucking part that supports a substrate using electrostatic force, and a lower part of the chucking part. A base plate that supports the king portion; and a cushion portion that is made of a plastic foam material and is disposed between the chucking portion and the base plate to prevent damage to the substrate supported by the chucking portion.
また、本発明において、前記クッション部は、0.1〜1mmの厚さを有することが好ましい。 Moreover, in this invention, it is preferable that the said cushion part has a thickness of 0.1-1 mm.
更に、本発明において、前記クッション部は、ポリエチレンフォームからなることが好ましい。 Furthermore, in the present invention, the cushion part is preferably made of polyethylene foam.
更にまた、本発明において、前記クッション部は、変形率が25%であるとき、圧縮強度が0.1〜3kgf/cm2であることが好ましい。 Furthermore, in the present invention, the cushion part preferably has a compressive strength of 0.1 to 3 kgf / cm 2 when the deformation rate is 25%.
本発明に係るチャックによれば、ポリイミド材質のチャッキング部の下側にポリエチレンフォーム材質のクッション部が配備されて緩衝性及び復元性に優れていることから、基板の破損を防ぐことができるという顕著な効果を奏することができる。 According to the chuck according to the present invention, since the cushion part made of polyethylene foam material is disposed under the chucking part made of polyimide material and has excellent buffering and restoring properties, it is possible to prevent the substrate from being damaged. A remarkable effect can be achieved.
以下、添付図面に基づいて、本発明の具体的な実施形態について詳細に説明する。 Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
本実施形態に係る緩衝性に優れた静電チャック1は、図1に示すように、チャッキング部10と、ベースプレート20及びクッション部30を備えてなる。
As shown in FIG. 1, the electrostatic chuck 1 having excellent buffering properties according to the present embodiment includes a
まず、前記チャッキング部10は、静電気力を用いて基板を固定及び支持する構成要素であって、静電気力を発生可能な構造を有する。具体的に、前記チャッキング部10は、図1に示すように、上下にそれぞれ誘電層11、12が配備された状態で上下の誘電層11、12の間に電極層13が配備される構造を有していてもよい。前記誘電層11、12は、ポリイミド(PolyImide)材質からなるフィルムであることが好ましく、厚さは、約20〜100μmであることが好ましい。
First, the
また、前記電極層13は、特定のパターンを有するように形成され、別途の工程により成形された状態で前記上下の誘電層11、12の間に取り付けられる方式により配設されてもよく、代表的な電極材料の材質である銅(Cu)をはじめとして、金(Au)、銀(Ag)、タングステン(W)、モリブデン(Mo)、ニッケル(Ni)などからなることがことが好ましい。
In addition, the
次いで、前記ベースプレート20は、図1に示すように、本実施形態に係るチャック1の基礎をなし、全体的にプレート状を呈する構成要素であって、前記チャッキング部10を下部で支持する。したがって、前記ベースプレート20は、形状が変化しない金属材質からなることが好ましく、更に好ましくは、アルミニウム材質からなる。
Next, as shown in FIG. 1, the
次いで、前記クッション部30は、図1に示すように、前記チャッキング部10とベースプレート20との間に配備されて前記チャッキング部10に支持される基板の破損を防ぐ構成要素である。したがって、前記クッション部30は、緩衝力を有するプラスチックフォーム素材からなり、例えば、ポリエチレンフォーム(PolyEthylene Foam)、ポリプロピレンフォーム(PolyPropylene Foam)、アクリル樹脂フォーム(Acrylic Foam)及びポリウレタンフォーム(PolyUrethane Foam)などの多孔質素材からなることが好ましい。
Next, as shown in FIG. 1, the
特に、前記クッション部30は、衝性及び復元性に優れていることから、ポリエチレンフォームからなることが好ましい。以下では、これについて詳細に説明する。
In particular, the
前記ポリエチレンフォームは、変形率が25%であるとき、圧縮強度が0.1〜3kgf/cm2であることが好ましい。このとき、前記ポリエチレンフォームの厚さは、0.1〜1mmであることが好ましい。ポリエチレンフォームの厚さが1mmを超える場合には、工程中に被合着物が十分な圧力を受けるまで長すぎる時間がかかるだけではなく、被合着物が十分な圧力を受け難いという問題があり、復元性が顕著に劣化するという問題がある。一方、0.1mm未満である場合には、緩衝性に劣るという問題がある。 The polyethylene foam preferably has a compressive strength of 0.1 to 3 kgf / cm 2 when the deformation rate is 25%. At this time, the thickness of the polyethylene foam is preferably 0.1 to 1 mm. When the thickness of the polyethylene foam exceeds 1 mm, not only does it take a long time until the bonded object is subjected to sufficient pressure during the process, but there is a problem that the bonded object is difficult to receive sufficient pressure, There is a problem that the recoverability is significantly deteriorated. On the other hand, when it is less than 0.1 mm, there is a problem that the buffering property is inferior.
また、本発明において、前記ポリエチレンフォームは、0.1kgf/cm2の圧力を加えるとき、クッションの変化量が1.20%以上であることが好ましい。 In the present invention, the polyethylene foam preferably has a cushion variation of 1.20% or more when a pressure of 0.1 kgf / cm 2 is applied.
このように、前記クッション部30は、ポリエチレンフォームをはじめとして、ポリプロピレンフォーム(PolyPropylene Foam)、アクリル樹脂フォーム(Acrylic Foam)及びポリウレタンフォーム(PolyUrethane Foam)から形成した場合、本発明者は実験的にその効果を下記表1及び2から確認し、実際に製品を適用して同じ結果が得られることを再確認した。下記表1及び2は、本発明の理解への一助となるための単純な実験結果であり、これにより保護範囲が制限又は限定されないということはいうまでもない。
As described above, when the
このようなポリエチレンフォームは、図2及び図3に示すように、同じ圧縮変形の条件下でポリエチレンフォームの厚さが大きくなるにつれて圧縮強度が小さくなるためクッション能が向上するが、厚さが1mmを超える場合には復元力が低下し、被合着物に十分な圧力を加え難く、しかも、長時間がかかるためチャックに向いていな As shown in FIG. 2 and FIG. 3, such a polyethylene foam is improved in cushioning performance as the thickness of the polyethylene foam increases under the same compression deformation condition, and thus the cushioning performance is improved. If it exceeds, the restoring force will be reduced, it will be difficult to apply sufficient pressure to the bonded object, and it will take a long time, so it is not suitable for the chuck.
(表1)
(表2)
加えられた圧力が0.1kgf/cm2であるときのクッションの変化量
このような特性を有するポリエチレンフォーム材質のクッション部は、上記表1及び2に記載されているように、同じ量の変化に必要な圧力が先行特許のシリコンラバーに比べてはるかに小さく、同じ圧力が加えられたときの変化量がはるかに多いということを確認することができ
(Table 1)
(Table 2)
Cushion change amount when applied pressure is 0.1 kgf / cm 2
As described in Tables 1 and 2 above, the cushion part made of polyethylene foam material having such characteristics has a much smaller pressure required for the same amount of change than the silicone rubber of the prior patent, and the same pressure. You can see that the amount of change when
(表3)
チャックに採用されるクッション部に必要な他の物性である復元力を測定するために、圧縮強度が25%であるときの力で24時間かけて圧力を加えた後、22時間待った状態で厚さの変化量を測定する方式を利用する。
(Table 3)
In order to measure the restoring force, which is another physical property required for the cushion part employed in the chuck, after applying pressure for 24 hours with the force when the compressive strength is 25%, the thickness is waited for 22 hours. A method for measuring the amount of change in height is used.
この方式で復元力を測定すれば、下記表3に示すように、ポリエチレンフォームからなる素材の変形値が小さいため復元性に最も優れていることが分かる。 When the restoring force is measured by this method, as shown in Table 3 below, it can be seen that since the deformation value of the material made of polyethylene foam is small, the restoring property is most excellent.
一方、前記クッション部30は、前記ベースプレート10に接着層40により貼着される。同様に、図1に示すように、前記クッション部30と前記下部誘電層12との間にも接着層50が介装されて両者を強固に貼り合わせる。
Meanwhile, the
1 本発明の実施形態に係る緩衝性に優れた静電チャック
10 チャッキング部
20 ベースプレート
30 クッション部
40 接着層
DESCRIPTION OF SYMBOLS 1 Electrostatic chuck excellent in buffering property according to an embodiment of the
Claims (3)
前記チャッキング部の下部に配置されて前記チャッキング部を支持するベースプレートと、
プラスチックフォーム系の素材からなり、前記チャッキング部とベースプレートとの間に配備されて前記チャッキング部に支持される基板の破損を防ぐクッション部と、
を備える緩衝性に優れた静電チャック。 A chucking portion that supports the substrate using electrostatic force;
A base plate disposed under the chucking portion and supporting the chucking portion;
A cushion part made of a plastic foam-based material and disposed between the chucking part and the base plate to prevent damage to the substrate supported by the chucking part;
An electrostatic chuck with excellent cushioning.
0.1〜1mmの厚さを有することを特徴とする請求項1に記載の緩衝性に優れた静電チャック。
ポリエチレンフォームからなることを特徴とする請求項1に記載の緩衝性に優れた静電チャック。 The cushion part is
The electrostatic chuck having excellent buffering properties according to claim 1, wherein the electrostatic chuck has a thickness of 0.1 to 1 mm.
2. The electrostatic chuck having excellent buffering properties according to claim 1, wherein the electrostatic chuck is made of polyethylene foam.
変形率が25%であるとき、圧縮強度が0.1〜3kgf/cm2であることを特徴とする請求項2に記載の緩衝性に優れた静電チャック。 The cushion part is
The electrostatic chuck with excellent shock-absorbing property according to claim 2 , wherein when the deformation rate is 25%, the compressive strength is 0.1 to 3 kgf / cm 2 .
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KR10-2018-0040464 | 2018-04-06 | ||
KR1020180040464A KR101964631B1 (en) | 2018-04-06 | 2018-04-06 | A electrostatic chuck |
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JP2019187222A true JP2019187222A (en) | 2019-10-24 |
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JP2018084757A Pending JP2019187222A (en) | 2018-04-06 | 2018-04-26 | Electrostatic chuck excellent in buffering |
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JP (1) | JP2019187222A (en) |
KR (1) | KR101964631B1 (en) |
CN (1) | CN110349898A (en) |
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KR102451733B1 (en) * | 2021-12-20 | 2022-10-11 | 김순훈 | Electrostatic chuck with improved durability |
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KR100984748B1 (en) * | 2006-04-03 | 2010-10-01 | 주식회사 코미코 | Electrostatic chuck, assemble-type chucking apparatus having the chuck, apparatus for attaching glass substrates having the chuck and assemble-type apparatus for attaching glass substrates having the chuck |
KR20080045336A (en) * | 2006-11-20 | 2008-05-23 | 주식회사 코미코 | Electrostatic chuck and method of manufacturing the same |
KR20160069855A (en) * | 2014-12-09 | 2016-06-17 | 엘지전자 주식회사 | Solar cell module and edge tape used for the same |
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2018
- 2018-04-06 KR KR1020180040464A patent/KR101964631B1/en active IP Right Grant
- 2018-04-26 JP JP2018084757A patent/JP2019187222A/en active Pending
- 2018-04-27 CN CN201810390816.8A patent/CN110349898A/en active Pending
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JPH06274114A (en) * | 1993-03-18 | 1994-09-30 | Taihei Kagaku Seihin Kk | Method for holding body with electrostatic force |
JPH11168134A (en) * | 1997-12-03 | 1999-06-22 | Shin Etsu Chem Co Ltd | Electrostatic attracting device and manufacture thereof |
JP2004001169A (en) * | 2001-12-12 | 2004-01-08 | Toyobo Co Ltd | Abrasive pad for semiconductor wafer polishing |
JP2004043797A (en) * | 2003-05-27 | 2004-02-12 | Toyobo Co Ltd | Void-containing urethane molded product for polishing pad, polishing sheet, and the polishing pad |
JP2008085245A (en) * | 2006-09-29 | 2008-04-10 | Shinko Electric Ind Co Ltd | Electrostatic chuck |
JPWO2008108146A1 (en) * | 2007-03-01 | 2010-06-10 | 株式会社クリエイティブ テクノロジー | Electrostatic chuck |
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JP2009200393A (en) * | 2008-02-25 | 2009-09-03 | Nhk Spring Co Ltd | Electrostatic chuck and method of manufacturing the same |
JP2016124734A (en) * | 2014-12-26 | 2016-07-11 | 住友大阪セメント株式会社 | Corrosion resistant member, electrostatic chuck device and method for producing corrosion resistant member |
US20180123486A1 (en) * | 2016-11-03 | 2018-05-03 | Samsung Display Co., Ltd. | Electrostatic chuck and electrostatic adsorption apparatus |
Also Published As
Publication number | Publication date |
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KR101964631B1 (en) | 2019-04-02 |
CN110349898A (en) | 2019-10-18 |
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