JP2019187222A - Electrostatic chuck excellent in buffering - Google Patents

Electrostatic chuck excellent in buffering Download PDF

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Publication number
JP2019187222A
JP2019187222A JP2018084757A JP2018084757A JP2019187222A JP 2019187222 A JP2019187222 A JP 2019187222A JP 2018084757 A JP2018084757 A JP 2018084757A JP 2018084757 A JP2018084757 A JP 2018084757A JP 2019187222 A JP2019187222 A JP 2019187222A
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electrostatic chuck
chucking
substrate
buffering
base plate
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ジン キム、ヒョン
Hyun Jin Kim
ジン キム、ヒョン
ボム パク、スン
Seung Beom Park
ボム パク、スン
シク キム、ジョン
Jong Sik Kim
シク キム、ジョン
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Apollo Technology Co Ltd
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Apollo Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

To provide an electrostatic chuck with excellent buffering, which has a cushion unit made of a polyethylene foam material on a lower side of a chucking unit made of a polyimide material, thereby being excellent in buffering and restoration and thus capable of preventing damage to a substrate.SOLUTION: According to the present invention, an electrostatic chuck with excellent buffering includes: a chucking unit supporting a substrate with electrostatic force; a base plate provided on a lower portion of the chucking unit and supporting the chucking unit; and a cushion unit made of a plastic foam based material and disposed between the chucking unit and the base plate to prevent damage to the substrate supported on the chucking unit.SELECTED DRAWING: Figure 1

Description

本発明は、チャックに係り、更に詳しくは、ポリイミド材質のチャッキング部の下側にポリエチレンフォーム材質のクッション部が配備されて緩衝性及び復元性に優れていることから、基板の破損を防ぐことのできる緩衝性に優れた静電チャックに関する。   The present invention relates to a chuck, and more particularly, a cushioning portion made of a polyethylene foam material is provided under a chucking portion made of a polyimide material and has excellent buffering and restoring properties, thereby preventing damage to the substrate. The present invention relates to an electrostatic chuck with excellent buffering ability.

最近の次世代半導体及びディスプレイパネル工程装備には静電気力を用いたチャックが核心部品として用いられてウェーハ又はガラス基板を固定している。前記チャックとしては、通常、母材に2以上の誘電層が形成され、誘電層の間に電極が挿入されて用いられるものと、母材に絶縁層及び誘電層が形成され、絶縁層及び誘電層の間に電極が挿入されて用いられるものなどが挙げられる。前記チャックは、伝導性を有する電極に直流電圧を印加すれば、誘電体の分極現象により被処理物であるウェーハ又はガラス基板に反対極性が発生することにより、被処理物であるウェーハ又はガラス基板と誘電体との間に発生する静電気力を用いて被処理物であるウェーハ又はガラス基板を固定する装置である。   In the next generation semiconductor and display panel process equipment, a chuck using electrostatic force is used as a core part to fix a wafer or a glass substrate. As the chuck, usually, two or more dielectric layers are formed on a base material and an electrode is inserted between the dielectric layers, and an insulating layer and a dielectric layer are formed on the base material. Examples include those in which an electrode is inserted between the layers. When a DC voltage is applied to the conductive electrode, the chuck generates a wafer or glass substrate that is the object to be processed by generating a reverse polarity in the wafer or glass substrate that is the object to be processed due to a dielectric polarization phenomenon. This is an apparatus for fixing a wafer or a glass substrate as an object to be processed using an electrostatic force generated between the substrate and a dielectric.

一方、従来より、液晶パネル用基板の大きさに対応するように一辺が1000mm以上であるチャックを単一化した部品として用いてきた。この場合、従来の単一チャックは、セラミック又は金属材などの高い硬度を有する材質により製作されて、単一静電吸着装置の平面を均一に加工し難かった。このため、従来より、液晶パネル用基板を加工するとき、前記液晶パネル用基板には不均一な荷重が印加され、前記液晶パネル用基板が破損されることが頻発していた。   On the other hand, conventionally, a chuck having a side of 1000 mm or more has been used as a single component so as to correspond to the size of the substrate for a liquid crystal panel. In this case, the conventional single chuck is made of a material having high hardness such as ceramic or metal material, and it is difficult to uniformly process the plane of the single electrostatic chuck. For this reason, conventionally, when a liquid crystal panel substrate is processed, a non-uniform load is applied to the liquid crystal panel substrate, and the liquid crystal panel substrate is frequently damaged.

更に、従来の静電吸着装置は、その製造コストが高く、加工に際して均一な平坦度を持たせるために高いコスト及び長い加工時間がかかり、製品の不良度が高い。この理由から、従来より、小型のチャックを組立て式に並べて大型基板を吸着可能な組立て型静電吸着装置の開発が求められてきた。しかしながら、高い硬度を有するセラミックや金属材の支持基材が適用されたチャックを組み立てて用いる場合、それぞれのチャックの加工寸法が異なり、且つ、それぞれの静電吸着力が異なるため、上述した単一の静電吸着装置の問題を解消することができないのが現状である。   Furthermore, the conventional electrostatic attraction apparatus has a high manufacturing cost, and takes a high cost and a long processing time to give a uniform flatness during processing, and the degree of product defect is high. For this reason, there has been a demand for the development of an assembly-type electrostatic attraction apparatus capable of adsorbing a large substrate by arranging small chucks in an assembling manner. However, when assembling and using chucks to which a ceramic or metal support substrate having high hardness is applied, the processing dimensions of the chucks are different and the electrostatic adsorption forces are different. The present situation is that it is not possible to solve the problem of the electrostatic adsorption device.

現在、チャッキング方式は、ディスプレイ産業だけではなく、半導体産業においても汎用されている。しかしながら、上述した問題がウェーハをチャッキングする場合にも同様に発生して高価なウェーハが損傷される事故も多発しているのが現状である。   Currently, the chucking method is widely used not only in the display industry but also in the semiconductor industry. However, in the current situation, there are many accidents in which the above-mentioned problem occurs when a wafer is chucked and an expensive wafer is damaged.

したがって、チャック内に緩衝部材が配備されてこのような問題を解消可能なチャックに関する技術が大韓民国公開特許第10−2007−99188号公報に開示されているが、十分な緩衝力を確保することができず、その結果、基板に加えられる荷重を正常に吸収することができないという問題が依然として残されてきた。   Therefore, a technique related to a chuck that can solve such a problem by providing a buffer member in the chuck is disclosed in Korean Patent Laid-Open No. 10-2007-99188. As a result, there still remains a problem that the load applied to the substrate cannot be absorbed normally.

本発明が解決しようとする技術的課題は、ポリイミド材質のチャッキング部の下側にポリエチレンフォーム材質のクッション部が配備されて緩衝性及び復元性に優れていることから、基板の破損を防ぐことのできる緩衝性に優れた静電チャックを提供することである。   The technical problem to be solved by the present invention is to prevent the breakage of the substrate because the cushioning part and the restoring property are excellent because the cushioning part made of polyethylene foam material is arranged under the chucking part made of polyimide material. It is an object to provide an electrostatic chuck having excellent buffering performance.

上述した技術的課題を解決するための本発明に係る緩衝性に優れた静電チャックは、静電気力を用いて基板を支持するチャッキング部と、前記チャッキング部の下部に配置されて前記チャッキング部を支持するベースプレートと、プラスチックフォーム系の素材からなり、前記チャッキング部とベースプレートとの間に配備されて前記チャッキング部に支持される基板の破損を防ぐクッション部と、を備える。   An electrostatic chuck excellent in shock-absorbing property according to the present invention for solving the technical problem described above is provided with a chucking part that supports a substrate using electrostatic force, and a lower part of the chucking part. A base plate that supports the king portion; and a cushion portion that is made of a plastic foam material and is disposed between the chucking portion and the base plate to prevent damage to the substrate supported by the chucking portion.

また、本発明において、前記クッション部は、0.1〜1mmの厚さを有することが好ましい。   Moreover, in this invention, it is preferable that the said cushion part has a thickness of 0.1-1 mm.

更に、本発明において、前記クッション部は、ポリエチレンフォームからなることが好ましい。   Furthermore, in the present invention, the cushion part is preferably made of polyethylene foam.

更にまた、本発明において、前記クッション部は、変形率が25%であるとき、圧縮強度が0.1〜3kgf/cmであることが好ましい。 Furthermore, in the present invention, the cushion part preferably has a compressive strength of 0.1 to 3 kgf / cm 2 when the deformation rate is 25%.

本発明に係るチャックによれば、ポリイミド材質のチャッキング部の下側にポリエチレンフォーム材質のクッション部が配備されて緩衝性及び復元性に優れていることから、基板の破損を防ぐことができるという顕著な効果を奏することができる。   According to the chuck according to the present invention, since the cushion part made of polyethylene foam material is disposed under the chucking part made of polyimide material and has excellent buffering and restoring properties, it is possible to prevent the substrate from being damaged. A remarkable effect can be achieved.

本発明の一実施形態に係る緩衝性に優れた静電チャックの構造を示す模式断面図である。It is a schematic cross section which shows the structure of the electrostatic chuck which was excellent in the buffer property which concerns on one Embodiment of this invention. 本発明の一実施形態に係るポリエチレンフォーム素材の厚さ別の応力−変形率の曲線を示すグラフである。It is a graph which shows the curve of the stress-deformation rate according to thickness of the polyethylene foam raw material which concerns on one Embodiment of this invention. 本発明の一実施形態に係るポリエチレンフォーム素材の厚さ別の応力−変形率の曲線を示すグラフである。It is a graph which shows the curve of the stress-deformation rate according to thickness of the polyethylene foam raw material which concerns on one Embodiment of this invention.

以下、添付図面に基づいて、本発明の具体的な実施形態について詳細に説明する。   Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

本実施形態に係る緩衝性に優れた静電チャック1は、図1に示すように、チャッキング部10と、ベースプレート20及びクッション部30を備えてなる。   As shown in FIG. 1, the electrostatic chuck 1 having excellent buffering properties according to the present embodiment includes a chucking portion 10, a base plate 20, and a cushion portion 30.

まず、前記チャッキング部10は、静電気力を用いて基板を固定及び支持する構成要素であって、静電気力を発生可能な構造を有する。具体的に、前記チャッキング部10は、図1に示すように、上下にそれぞれ誘電層11、12が配備された状態で上下の誘電層11、12の間に電極層13が配備される構造を有していてもよい。前記誘電層11、12は、ポリイミド(PolyImide)材質からなるフィルムであることが好ましく、厚さは、約20〜100μmであることが好ましい。   First, the chucking unit 10 is a component that fixes and supports the substrate using an electrostatic force, and has a structure capable of generating the electrostatic force. Specifically, as shown in FIG. 1, the chucking unit 10 has a structure in which an electrode layer 13 is provided between the upper and lower dielectric layers 11 and 12 in a state where the upper and lower dielectric layers 11 and 12 are provided. You may have. The dielectric layers 11 and 12 are preferably a film made of a polyimide (PolyImide) material, and preferably have a thickness of about 20 to 100 μm.

また、前記電極層13は、特定のパターンを有するように形成され、別途の工程により成形された状態で前記上下の誘電層11、12の間に取り付けられる方式により配設されてもよく、代表的な電極材料の材質である銅(Cu)をはじめとして、金(Au)、銀(Ag)、タングステン(W)、モリブデン(Mo)、ニッケル(Ni)などからなることがことが好ましい。   In addition, the electrode layer 13 may be formed to have a specific pattern, and may be disposed by a method of being attached between the upper and lower dielectric layers 11 and 12 in a state of being formed by a separate process. In addition to copper (Cu), which is a typical electrode material, it is preferably made of gold (Au), silver (Ag), tungsten (W), molybdenum (Mo), nickel (Ni), or the like.

次いで、前記ベースプレート20は、図1に示すように、本実施形態に係るチャック1の基礎をなし、全体的にプレート状を呈する構成要素であって、前記チャッキング部10を下部で支持する。したがって、前記ベースプレート20は、形状が変化しない金属材質からなることが好ましく、更に好ましくは、アルミニウム材質からなる。   Next, as shown in FIG. 1, the base plate 20 is a component that forms the basis of the chuck 1 according to the present embodiment and has a plate shape as a whole, and supports the chucking portion 10 at a lower portion. Accordingly, the base plate 20 is preferably made of a metal material whose shape does not change, and more preferably an aluminum material.

次いで、前記クッション部30は、図1に示すように、前記チャッキング部10とベースプレート20との間に配備されて前記チャッキング部10に支持される基板の破損を防ぐ構成要素である。したがって、前記クッション部30は、緩衝力を有するプラスチックフォーム素材からなり、例えば、ポリエチレンフォーム(PolyEthylene Foam)、ポリプロピレンフォーム(PolyPropylene Foam)、アクリル樹脂フォーム(Acrylic Foam)及びポリウレタンフォーム(PolyUrethane Foam)などの多孔質素材からなることが好ましい。   Next, as shown in FIG. 1, the cushion portion 30 is a component that is disposed between the chucking portion 10 and the base plate 20 and prevents breakage of the substrate supported by the chucking portion 10. Accordingly, the cushion part 30 is made of a plastic foam material having a buffering force, such as polyethylene foam (PolyEthylene Foam), polypropylene foam (PolyPropylene Foam), acrylic resin foam (Acrylic Foam), and polyurethane foam (PolyUrethan Foam). It is preferable to consist of a porous material.

特に、前記クッション部30は、衝性及び復元性に優れていることから、ポリエチレンフォームからなることが好ましい。以下では、これについて詳細に説明する。   In particular, the cushion portion 30 is preferably made of polyethylene foam because it has excellent impact and resilience. This will be described in detail below.

前記ポリエチレンフォームは、変形率が25%であるとき、圧縮強度が0.1〜3kgf/cmであることが好ましい。このとき、前記ポリエチレンフォームの厚さは、0.1〜1mmであることが好ましい。ポリエチレンフォームの厚さが1mmを超える場合には、工程中に被合着物が十分な圧力を受けるまで長すぎる時間がかかるだけではなく、被合着物が十分な圧力を受け難いという問題があり、復元性が顕著に劣化するという問題がある。一方、0.1mm未満である場合には、緩衝性に劣るという問題がある。 The polyethylene foam preferably has a compressive strength of 0.1 to 3 kgf / cm 2 when the deformation rate is 25%. At this time, the thickness of the polyethylene foam is preferably 0.1 to 1 mm. When the thickness of the polyethylene foam exceeds 1 mm, not only does it take a long time until the bonded object is subjected to sufficient pressure during the process, but there is a problem that the bonded object is difficult to receive sufficient pressure, There is a problem that the recoverability is significantly deteriorated. On the other hand, when it is less than 0.1 mm, there is a problem that the buffering property is inferior.

また、本発明において、前記ポリエチレンフォームは、0.1kgf/cmの圧力を加えるとき、クッションの変化量が1.20%以上であることが好ましい。 In the present invention, the polyethylene foam preferably has a cushion variation of 1.20% or more when a pressure of 0.1 kgf / cm 2 is applied.

このように、前記クッション部30は、ポリエチレンフォームをはじめとして、ポリプロピレンフォーム(PolyPropylene Foam)、アクリル樹脂フォーム(Acrylic Foam)及びポリウレタンフォーム(PolyUrethane Foam)から形成した場合、本発明者は実験的にその効果を下記表1及び2から確認し、実際に製品を適用して同じ結果が得られることを再確認した。下記表1及び2は、本発明の理解への一助となるための単純な実験結果であり、これにより保護範囲が制限又は限定されないということはいうまでもない。   As described above, when the cushion part 30 is formed from polyethylene foam, polypropylene foam (PolyPropylene Foam), acrylic resin foam (Acrylic Foam), and polyurethane foam (PolyUrethan Foam), the present inventors experimentally The effect was confirmed from the following Tables 1 and 2, and it was reconfirmed that the same result was obtained by actually applying the product. Tables 1 and 2 below are simple experimental results for helping understanding of the present invention, and it goes without saying that the scope of protection is not limited or limited.

このようなポリエチレンフォームは、図2及び図3に示すように、同じ圧縮変形の条件下でポリエチレンフォームの厚さが大きくなるにつれて圧縮強度が小さくなるためクッション能が向上するが、厚さが1mmを超える場合には復元力が低下し、被合着物に十分な圧力を加え難く、しかも、長時間がかかるためチャックに向いていな   As shown in FIG. 2 and FIG. 3, such a polyethylene foam is improved in cushioning performance as the thickness of the polyethylene foam increases under the same compression deformation condition, and thus the cushioning performance is improved. If it exceeds, the restoring force will be reduced, it will be difficult to apply sufficient pressure to the bonded object, and it will take a long time, so it is not suitable for the chuck.

(表1)

Figure 2019187222
(表2)
加えられた圧力が0.1kgf/cmであるときのクッションの変化量
Figure 2019187222
このような特性を有するポリエチレンフォーム材質のクッション部は、上記表1及び2に記載されているように、同じ量の変化に必要な圧力が先行特許のシリコンラバーに比べてはるかに小さく、同じ圧力が加えられたときの変化量がはるかに多いということを確認することができ (Table 1)
Figure 2019187222
(Table 2)
Cushion change amount when applied pressure is 0.1 kgf / cm 2
Figure 2019187222
As described in Tables 1 and 2 above, the cushion part made of polyethylene foam material having such characteristics has a much smaller pressure required for the same amount of change than the silicone rubber of the prior patent, and the same pressure. You can see that the amount of change when

(表3)

Figure 2019187222
チャックに採用されるクッション部に必要な他の物性である復元力を測定するために、圧縮強度が25%であるときの力で24時間かけて圧力を加えた後、22時間待った状態で厚さの変化量を測定する方式を利用する。 (Table 3)
Figure 2019187222
In order to measure the restoring force, which is another physical property required for the cushion part employed in the chuck, after applying pressure for 24 hours with the force when the compressive strength is 25%, the thickness is waited for 22 hours. A method for measuring the amount of change in height is used.

この方式で復元力を測定すれば、下記表3に示すように、ポリエチレンフォームからなる素材の変形値が小さいため復元性に最も優れていることが分かる。   When the restoring force is measured by this method, as shown in Table 3 below, it can be seen that since the deformation value of the material made of polyethylene foam is small, the restoring property is most excellent.

一方、前記クッション部30は、前記ベースプレート10に接着層40により貼着される。同様に、図1に示すように、前記クッション部30と前記下部誘電層12との間にも接着層50が介装されて両者を強固に貼り合わせる。   Meanwhile, the cushion portion 30 is adhered to the base plate 10 with an adhesive layer 40. Similarly, as shown in FIG. 1, an adhesive layer 50 is interposed between the cushion portion 30 and the lower dielectric layer 12 to firmly bond the two together.

1 本発明の実施形態に係る緩衝性に優れた静電チャック
10 チャッキング部
20 ベースプレート
30 クッション部
40 接着層
DESCRIPTION OF SYMBOLS 1 Electrostatic chuck excellent in buffering property according to an embodiment of the present invention 10 Chucking portion 20 Base plate 30 Cushion portion 40 Adhesive layer

Claims (3)

静電気力を用いて基板を支持するチャッキング部と、
前記チャッキング部の下部に配置されて前記チャッキング部を支持するベースプレートと、
プラスチックフォーム系の素材からなり、前記チャッキング部とベースプレートとの間に配備されて前記チャッキング部に支持される基板の破損を防ぐクッション部と、
を備える緩衝性に優れた静電チャック。
A chucking portion that supports the substrate using electrostatic force;
A base plate disposed under the chucking portion and supporting the chucking portion;
A cushion part made of a plastic foam-based material and disposed between the chucking part and the base plate to prevent damage to the substrate supported by the chucking part;
An electrostatic chuck with excellent cushioning.
前記クッション部は、
0.1〜1mmの厚さを有することを特徴とする請求項1に記載の緩衝性に優れた静電チャック。
ポリエチレンフォームからなることを特徴とする請求項1に記載の緩衝性に優れた静電チャック。
The cushion part is
The electrostatic chuck having excellent buffering properties according to claim 1, wherein the electrostatic chuck has a thickness of 0.1 to 1 mm.
2. The electrostatic chuck having excellent buffering properties according to claim 1, wherein the electrostatic chuck is made of polyethylene foam.
前記クッション部は、
変形率が25%であるとき、圧縮強度が0.1〜3kgf/cmであることを特徴とする請求項2に記載の緩衝性に優れた静電チャック。
The cushion part is
The electrostatic chuck with excellent shock-absorbing property according to claim 2 , wherein when the deformation rate is 25%, the compressive strength is 0.1 to 3 kgf / cm 2 .
JP2018084757A 2018-04-06 2018-04-26 Electrostatic chuck excellent in buffering Pending JP2019187222A (en)

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KR10-2018-0040464 2018-04-06
KR1020180040464A KR101964631B1 (en) 2018-04-06 2018-04-06 A electrostatic chuck

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JP2019187222A true JP2019187222A (en) 2019-10-24

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KR102451733B1 (en) * 2021-12-20 2022-10-11 김순훈 Electrostatic chuck with improved durability

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JPH06274114A (en) * 1993-03-18 1994-09-30 Taihei Kagaku Seihin Kk Method for holding body with electrostatic force
JPH11168134A (en) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd Electrostatic attracting device and manufacture thereof
JP2004001169A (en) * 2001-12-12 2004-01-08 Toyobo Co Ltd Abrasive pad for semiconductor wafer polishing
JP2004043797A (en) * 2003-05-27 2004-02-12 Toyobo Co Ltd Void-containing urethane molded product for polishing pad, polishing sheet, and the polishing pad
JP2008085245A (en) * 2006-09-29 2008-04-10 Shinko Electric Ind Co Ltd Electrostatic chuck
JPWO2008108146A1 (en) * 2007-03-01 2010-06-10 株式会社クリエイティブ テクノロジー Electrostatic chuck
JP2008282875A (en) * 2007-05-08 2008-11-20 Shinko Electric Ind Co Ltd Electrostatic chuck and method of manufacturing electrostatic chuck
JP2009141003A (en) * 2007-12-04 2009-06-25 Nhk Spring Co Ltd Electrostatic chuck
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JP2016124734A (en) * 2014-12-26 2016-07-11 住友大阪セメント株式会社 Corrosion resistant member, electrostatic chuck device and method for producing corrosion resistant member
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