TWI381479B - Electrostatic chuck device - Google Patents

Electrostatic chuck device Download PDF

Info

Publication number
TWI381479B
TWI381479B TW95102287A TW95102287A TWI381479B TW I381479 B TWI381479 B TW I381479B TW 95102287 A TW95102287 A TW 95102287A TW 95102287 A TW95102287 A TW 95102287A TW I381479 B TWI381479 B TW I381479B
Authority
TW
Taiwan
Prior art keywords
power supply
electrostatic chuck
workpiece
disposed
electrode
Prior art date
Application number
TW95102287A
Other languages
Chinese (zh)
Other versions
TW200644148A (en
Inventor
Yoshikazu Ohtani
Original Assignee
Shinetsu Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to PCT/JP2005/008227 priority Critical patent/WO2006117871A1/en
Application filed by Shinetsu Eng Co Ltd filed Critical Shinetsu Eng Co Ltd
Publication of TW200644148A publication Critical patent/TW200644148A/en
Application granted granted Critical
Publication of TWI381479B publication Critical patent/TWI381479B/en

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks

Description

Electrostatic chuck device
The present invention relates to an electrostatic chuck device, which is used, for example, in the manufacture of a flat panel display such as a liquid crystal display (LCD) or a plasma display (PDP), and includes: a glass substrate or a synthetic resin including adsorption and holding of CF glass or TFT glass. A substrate assembly device for a substrate bonding machine that bonds a workpiece such as a substrate; a substrate transfer device that transports the substrate; or a semiconductor manufacturing device that processes a workpiece such as a wafer.
More specifically, the present invention relates to an electrostatic chuck device that electrostatically adsorbs a workpiece by applying a voltage to an electrode disposed in a planar shape to the opposite surface of the workpiece.
Conventionally, in a substrate laminating machine in which two substrates are overlapped in a vacuum, the substrate is held by an electrostatic chuck. However, as the size of the substrate has increased in recent years, it has been difficult to manufacture a large-sized electrostatic chuck, and it has become a very expensive product even if it can be manufactured. .
Therefore, in order to solve such problems, and in order to correspond to a large substrate, there is an electrostatic chuck device in which a plurality of electrostatic chucks are arranged.
As an example of such an electrostatic chuck device, two or more electrostatic chucks are joined and fixed in a plane on a pedestal (base plate) capable of adsorbing a large workpiece (adsorbed body), and the inside of each electrostatic chuck is turned on. The electrode terminals of the electrodes are electrically connected to each other from the back side of the pedestal through the through holes of the bottom plate to constitute an electrostatic chuck unit (see, for example, Patent Document 1).
Patent Document 1: JP-A-2002-252274 (pages 1-6, 1-7) in a liquid crystal display production line or the like using such an electrostatic chuck device, particularly in assembly, sometimes glass cullet (fragment) After being transported to the glass substrate, the cullet is bitten between the electrostatic chuck and the electrostatic chuck, and sometimes the membrane surface of the electrostatic chuck is broken to cause a malfunction.
If a part of the film surface of the electrostatic chuck is broken, the entire function of the electrostatic chuck is stopped, and the electrode to which the high voltage is applied is exposed, so that the metal pedestal is used especially when it is used in a vacuum state in a vacuum bonding machine. There is a concern that arcing occurs between the ground portions or that plasma discharge occurs in the Paschen region during vacuuming, which may cause defects in overcurrent.
In this case, in the case of Patent Document 1, there is a problem in that since two or more electrostatic chucks are disposed, an electrostatic chuck other than the electrostatic chuck in which the film surface is broken can be used, but a part of the film surface is broken. Since the electrostatic chuck cannot be repaired on site, in order to prevent the discharge, it is necessary to exchange the electrostatic chuck itself, in which a part of the film surface is broken, so that the cost rises and the operation of the entire production line cannot be restarted until the end of the exchange operation, so that the operation rate is lowered.
In order to shorten the time required to exchange such an electrostatic chuck, it is necessary to keep spare parts of the electrostatic chuck in advance in the vicinity of the installation place, and there is a problem that the total cost becomes high.
In the present invention, the invention of claim 1 is aimed at recovering the workpiece by suction in a short time by a simple process.
In addition to the object of the invention of claim 1, the invention of claim 2 aims to prevent the electrode from being damaged again due to the diffusion of the crack along the cutting operation while easily performing the cutting operation of each region.
The invention of claim 3 is not intended to reduce the electrostatic adsorption function and to secure the space occupied by the power supply unit, in addition to the object of the invention of claim 1 or 2.
In addition to the object of the invention of claim 1, 2 or 3, the invention of claim 4 has an object of suppressing a bad influence on a workpiece even if it partially protrudes in accordance with the cutting process of the power supply unit.
The invention of claim 5 is intended to prevent the discharge of the cut portion and the metal pedestal from being selected in addition to the object of the invention of claim 4.
The invention of claim 6 is intended to provide a simple and precise sealing treatment in a short time, in addition to the object of the invention of claim 1, 2, 3, 4 or 5, and to use a sealing member.
In order to achieve the above object, the invention of claim 1 is characterized in that the electrode is divided into a plurality of regions in a plane parallel to the workpiece, and separate electrode patterns are respectively provided in each of the regions, and in each region The power supply unit for each electrode pattern is provided, and an arbitrary power supply unit is cut off to stop the power supply portion of the electrode pattern disposed in an arbitrary area.
The invention of claim 2 is characterized in that, in the configuration of the invention of claim 1, the plurality of power supply units are arranged close to each other, and a slit is formed along the power supply unit in the vicinity of the power supply unit.
The invention of claim 3 is characterized in that the configuration of the invention of claim 1 or 2 is such that the plurality of power supply portions are disposed on an outer region of the electrostatic chuck functional surface on which the electrode pattern is provided on the surface opposite to the workpiece.
The invention of claim 4 is characterized in that the configuration of the invention of claim 1, 2 or 3 is such that a concave portion is formed on a pedestal facing the power supply portion.
The invention of claim 5 is characterized in that, in the configuration of the invention of claim 4, the configuration of the selective cut portion of the power supply portion is sealed in the recess of the pedestal.
The invention of claim 6 is characterized in that, in the configuration of the invention of claim 1, 2, 3, 4 or 5, a configuration in which an annular sealing material is disposed and sealed around the selective cutting portion of the power supply portion is provided.
According to the invention of claim 1, the electrode is divided into a plurality of regions in a plane parallel to the workpiece, and independent electrode patterns are respectively disposed in each of the regions, and power supply to each electrode pattern is separately provided in each region. The part is cut off from the arbitrary power supply unit, and the power supply portion of the electrode pattern disposed in an arbitrary region is stopped, whereby even if a part of the film surface is broken in the plurality of regions, the electrode pattern in the damaged region is not selective. The ground functions as an electrostatic chuck, but the electrode pattern of the area other than it acts as an electrostatic chuck.
Therefore, the workpiece can be adsorbed in a short time by simple processing.
As a result, it is not necessary to exchange the entire electrostatic chuck in order to prevent discharge even if the film surface is partially broken in order to prevent the electrostatic chuck of the electrostatic chuck itself from being destroyed by discharge of the film surface. Several repairs can reduce the total cost and also reduce the number of spare parts for electrostatic chucks.
In particular, when the electrostatic chuck device of the present invention is used in a liquid crystal display production line or the like, even if a part of the film surface is broken, discharge can be surely prevented, and the operation of the entire production line can be resumed in a short time, so that stabilization can be expected without lowering the operation rate. Production volume.
According to the invention of claim 2, the effect of the invention of claim 1 is such that a plurality of power supply units are arranged close to each other, and a slit is formed along the power supply unit in the vicinity of the power supply unit, thereby inserting from the slit. A cutting tool such as a cutter or a scissors can cut off one of the power supply units to be aimed at, and at the same time, a film or the like which is formed by cutting the edge of the edge does not cause a crack.
Therefore, it is possible to prevent the electrode from being damaged again due to the diffusion of the crack accompanying the cutting operation while easily performing the cutting operation of each region.
According to the invention of claim 3, in the effect of the invention of claim 1 or 2, a plurality of power supply portions are disposed on an outer region of the electrostatic chuck functional surface on which the electrode pattern is provided on the surface opposite to the workpiece, thereby ensuring power supply. The space of the part does not enter the area of the functional surface of the electrostatic chuck, and the effective area of the adsorption area can be broadly ensured.
Therefore, it is possible to ensure the space occupied by the power supply portion without lowering the electrostatic adsorption function.
According to the invention of claim 4, the effect of the invention of claim 1, 2 or 3 is such that a recess is formed in the pedestal facing the power supply portion, whereby the cut portion of the power supply portion is cut off by the power supply portion. The workpiece is formed in a convex shape, and the cutting convex portion enters the concave portion during electrostatic adsorption of the workpiece, and the workpiece is not partially crimped.
Therefore, even if it partially protrudes with the cutting process of the power supply part, the bad influence on a workpiece can be suppressed.
According to the invention of claim 5, in the effect of the invention of claim 4, the selective cut portion of the power supply portion is sealed in the recess of the pedestal, whereby the selected cut portion of the power supply portion is not exposed.
Therefore, it is possible to prevent the discharge of the cut portion and the metal pedestal from being selected.
According to the invention of claim 6, the effect of the invention of claim 1, 2, 3, 4 or 5 is added, and the annular sealing material is disposed so as to be sealed around the selected cut portion of the power supply portion, thereby being sealed via the ring. The cut portion of the sealing material and the external atmosphere thereof are blocked.
Therefore, a simple and precise sealing treatment can be performed in a short time, and the sealing member can be reused.
The present invention shows a case where the electrostatic chuck apparatus A of the present invention is disposed in a substrate bonding machine which is a glass substrate such as an electrostatic adsorption liquid crystal display (LCD) panel as a workpiece W.
The substrate bonding machine holds the two substrates as the workpiece W on the opposing surface of the holding plate 11 disposed one above the other, and the partition is formed in the surrounding sealed space (not shown) to a predetermined degree of vacuum. The upper and lower holding plates are relatively moved in the XYθ direction to align the substrates, and then the upper substrate is forcibly peeled off from the upper holding plate, and the ring-shaped adhesive or sealing material (not shown) on the lower substrate is instantaneously After the pressure is applied to seal the two and overlap each other, the pressure difference between the inside and the outside of the two substrates is used to pressurize the two substrates to a specific gap to complete the bonding process.
Further, the electrostatic chuck device A of the present invention is disposed on the substrate side of the holding plate 11, or a plurality of electrostatic chuck devices A are joined to each other, and are arranged side by side so that the respective adsorption faces are flush. Even a large workpiece (substrate) W can be adsorbed and held exactly.
As shown in FIGS. 1 to 5, the electrostatic chuck device A of the present invention is an electrode 1 formed in a planar shape on the surface opposite to the workpiece W, and a dielectric layer 2 laminated on the electrode 1 and disposed along the same. A film-like or plate-like laminated structure composed of the pedestal 3 on the opposite side of the workpiece W is detachably attached to the back surface 3a of the pedestal 3 on the substrate-side surface 11a of the holding plate 11.
The dielectric layer 2 is formed of an elastically deformable insulating organic material made of, for example, an engineering plastic such as polyimine, polyether ether ketone (PEEK) or polyethylene naphthalate (PEN). a layer or a film of three or more layers or one layer, or a thin plate shape made of a ceramic such as Al 2 O 3 , SiC, AlN, or Zr 2 O 3 or the like, and formed only in a planar shape. Both sides of the electrode 1 or the side surface of the workpiece are adhered and laminated.
When the dielectric layer 2 made of an organic material such as yttrium or PEEK is accumulated on the surface side surface of the electrode 1 as described above, there is an advantage that electrical characteristics are excellent. When the dielectric layer 2 made of ceramic is laminated, the dielectric layer 2 is laminated. The hardening itself is advantageous, and the dielectric layer 2 is not easily damaged even when a hard foreign matter such as cullet (fragment) of glass is bitten between the workpiece W and the workpiece W.
Further, the back surface of the dielectric layer 2, the back surface of the electrode 1, and the pedestal 3 may be integrally bonded to each other by an adhesive layer (not shown) such as an adhesive or an adhesive.
Further, as shown in FIGS. 1 and 4, the electrode 1 is divided into a plurality of regions 1a in a plane parallel to the workpiece W, and an independent electrode pattern 1b is provided in each of the regions 1a, and each region 1a is separately provided. In the power supply unit 1c for individually controlling the power supply to the electrode patterns 1b, the power supply unit 1c is cut off by a cutting method to be described later, thereby supplying the power supply portion to the electrode pattern 1b disposed in the arbitrary region 1a. stop.
As shown in FIG. 1, the plurality of power supply portions 1c are disposed on an inner region of the electrostatic chuck functional surface 1' on which the electrode pattern 1b is disposed opposite to the workpiece W, or are disposed on the electrostatic chuck functional surface 1 as shown in FIG. As shown in the example, the outer regions of the plurality of power supply units 1c are respectively disposed in a plurality of locations in which the proximity of the regions 1a are respectively disposed in the vicinity of each region 1a, or all the power supply portions 1c are collectively disposed in specific portions. It is appropriate.
As described above, when a plurality of power supply units 1c are collectively arranged, as shown in FIG. 2, they are arranged close to each other and arranged substantially in parallel, and in the vicinity of the power supply portions 1c and on the dielectric layer 2 laminated thereon, along In the power supply unit 1c, slits (slits) 1d of a suitable length that are substantially parallel are formed in advance, and a slit (not shown) such as a cutter or a scissors can be inserted into the slit 1d in the subsequent step, and the blade 1d can be used. This cutting tool selects only the cutting process by the arbitrary power supply part 1c.
In the example of the drawing, a plurality of slits (slits) 1d are formed in substantially parallel slits between the power supply portions 1c arranged substantially in parallel.
As shown in FIG. 3 or FIG. 5, the back surface side of the plurality of power feeding portions 1c and the back surface side of the electrode pattern 1b are configured to face the respective power supply portions 1c via the dielectric layer 2 or the adhesive layer facing the pedestal 3. The concave portion 3b is formed at the position of the opposing surface; even if the cutting portion 1c' of the arbitrary feeding portion 1c is formed in a convex shape by the selective cutting process, the electrostatic attraction of the workpiece W is also performed. The cutting convex portion is inserted into the concave portion 3b, whereby the convex portion is cut off from the workpiece W, and the pressure portion is not strongly pressed in comparison with the other portions.
When the pedestal 3 is formed of a metal such as aluminum or a conductive material other than the metal, the insulating material 4 made of an insulating material is used to seal the cutting of the arbitrary feeding portion 1c which is selectively cut by the above-described cutting process. The portion 1c' is thereby prevented from being exposed by the cut portion 1c' to which a high voltage is applied, so as to avoid a phenomenon such as "plasma discharge" or "arc discharge".
Hereinafter, each embodiment of the present invention will be described with reference to the drawings.
Example 1
As shown in FIG. 1 to FIG. 3, the first embodiment shows that the electrode pattern 1b is a bipolar electrostatic chuck having an electrode of a + pole and an electrode of a - pole, and the electrode patterns 1b of the + and - poles are inserted and sealed. Between the dielectric layers 2 made of an engineering plastic such as polyimide or polyetheretherketone (PEEK), the plurality of power supply portions 1c are dispersedly disposed on the inner region of the electrostatic chuck functional surface 1'. The electrostatic chuck film of the integrated structure is adhered to the metal pedestal 3, and the recessed portion 3b is formed on the surface 3c of the pedestal 3 so as to face the feeding portion 1c.
In the example of the drawing, the region 1a has a rectangular shape, and the + pole and the - pole of the electrode pattern 1b are formed in a comb-tooth shape which are fitted to each other on the same plane, and are formed on the region 1a of, for example, about 500 mm × 300 mm. The pair of electrode patterns 1b are arranged to be fitted to each other.
Further, as the electrode structure other than the example of the drawing, a dielectric layer (insulating layer) composed of an insulating material such as a polyimide film disclosed in JP-A-2005-64105 may be used. An electrostatic chuck or a monopolar electrostatic chuck in which the surfaces of the two electrode patterns are covered with a dielectric layer (insulating film) such as a polyimide film or the like, and the first electrode pattern and the second electrode pattern are laminated on both sides.
Further, in the illustrated example, the + pole and the - pole of the electrode pattern 1b disposed on the three regions 1a arranged in a row are collectively grouped as one, thereby constituting the power supply portion 1c, and the grouped power supply portions are grouped. 1c is dispersedly arranged in a space formed between the electrode patterns 1b.
Next, a method of cutting the electrostatic chuck device A will be described.
When the workpiece W such as a substrate is electrostatically adsorbed, for example, the cullet (shards) of the glass are bitten between the electrostatic chuck function surface 1' of the electrostatic chuck device A, and the like, and corresponds to the electrostatic chuck functional surface 1'. When the dielectric layer 2 on the film surface and the electrode pattern 1b of the region 1a disposed in the specific portion are partially broken to cause a failure, the other electrostatic adsorption region on the region 1a corresponding to the electrode pattern 1b does not function due to an overcurrent. Therefore, the cutting process of the power supply unit 1c that communicates with the electrode pattern 1b of the damaged region 1a is performed, and the power supply portion of the electrode pattern 1b is stopped.
As shown in FIG. 2, in the other of the two slits 1d arranged to sandwich the power feeding portion 1c of the damage region 1a, for example, a cutting tool such as a cutter or a scissors is inserted, and only the power feeding portion 1c for aiming can be used. Selectively and simply cut off.
The cut portion 1c' of the power supply portion 1c that performs the selective cutting process has a shape that protrudes toward the workpiece W, and the wire after the cut is exposed to contact the outside air, so that FIG. 3(a)(b) As shown in the figure, the cut portion 1c' of the power supply portion 1c is pressed into the recess 3b of the pedestal 3, and then sealed by the insulator 4 made of an insulating material.
In this sealing example, the insulator 4 is laminated on the inner bottom surface of the recessed portion 3b, and the cut portion 1c' of the power supply portion 1c that has been cut and processed by the covering member 5 such as an insulating adhesive is applied to the insulator 4. By performing a molding process and sealing and fixing, the sealing process can be easily performed.
Further, at the same time as or before and after the selective cutting process, the bitten cullet is removed, and the surface of the broken dielectric layer 2 is polished and planarized, and then it can be used thereafter.
By the selective cutting process, the electrode pattern 1b in the damaged region 1a does not function as an electrostatic chuck, but the electrode pattern 1b of the region 1a other than the electrode 1b functions as an electrostatic chuck, so that it can be used later. Therefore, as a work, the workpiece W can be adsorbed in a short time by a simple cutting process.
In this case, by increasing the number of divisions of the region 1a, it is possible to reduce the area where the electrostatic adsorption does not function when a part of the failure occurs due to breakage or the like. However, in order to shield the wiring from the electrode, the electrode pattern of the bipolar electrode in the same layer is required. The pattern 1b is drawn around the wiring space of the power supply unit 1c and the space of the power supply unit 1c. Therefore, when the number of divisions of the area 1a is increased, the area of the electrostatic chuck function surface 1' is changed from the electrode pattern 1b which is not functioning as an electrostatic chuck. The space ratio of the wiring space of the power supply unit 1c and the power supply unit 1c also increases, and the effective area of the adsorption area decreases.
As a result, the electrostatic adsorption function is lowered, thereby requiring an optimum number of divisions.
Further, in a single-pole structure or a bipolar in which only a single potential is applied in the same layer, each layer is divided into individual layers, and the space in which the wiring is drawn from the electrode pattern 1b to the power supply portion 1c can also be utilized as a space effective for electrostatic adsorption. Therefore, it is possible to divide without reducing the effective area of adsorption.
Further, since the slit 1d is placed in the dielectric layer 2 in advance, the effect of preventing the crack from the cut end of the selective cutting process from being diffused to the dielectric layer 2c of the other power supply portion 1c or the region 1a is also affected. .
Further, in the example of the figure, the electrostatic chuck film is discarded together with the covering material 5 such as an insulating adhesive which is molded by the insulating body 4 of the recessed portion 3b, and is exchanged into a new electrostatic chuck film, and the pedestal 3 can be further The cost can be reduced as compared with the case of exchanging the entire electrostatic chuck device A including the pedestal 3.
Example 2
In the second embodiment, as shown in FIG. 4 to FIG. 5, the plurality of power supply portions 1c are dispersed and disposed on the outer region of the electrostatic chuck functional surface 1' in which the electrode pattern 1b is provided on the surface opposite to the workpiece W, and the structure can be bent. The electrostatic chuck film of the integral structure, and the power supply portion 1c protruding outwardly is bent and fixed along the side surface 3d of the pedestal 3; or is bent and fixed to the back surface 3a of the pedestal 3, and at the pedestal 3 The concave portion 3b is formed on the side surface 3d or the back surface 3a, so that the configuration of the cut portion 1c' of the power supply portion 1c that has been sealed by the sealing process is different from that of the first embodiment shown in Figs. 1 to 3, and the configuration other than The embodiment 1 shown in Figs. 1 to 3 is the same.
Therefore, in the second embodiment shown in FIG. 4 to FIG. 5, the same operational effects as those of the above-described first embodiment can be obtained, and it is necessary to secure the wiring space for pulling the wiring from the electrode pattern 1b to the power supply portion 1c. However, since it is not necessary to secure the space of the power supply unit 1c, even if the number of divisions of the area 1a is increased, the area of the electrostatic chuck function surface 1' is increased only from the electrode pattern 1b that does not function as an electrostatic chuck to the power supply unit 1c. With space, it is therefore possible to ensure an effective area of the adsorption region wider than that of Embodiment 1.
As a result, when the number of divisions of the area 1a is increased and the field of electrostatic adsorption is not reduced, the optimum number of divisions is not required in the first embodiment shown in Figs. 1 to 3, and it is easy to correspond. The space occupied by the power supply unit 1c can be ensured without lowering the electrostatic adsorption function.
Further, in the case of the substrate bonding machine in which the electrostatic chuck device A of the second embodiment is placed, the glass substrate such as the electrostatic adsorption liquid crystal display panel is pressed as a workpiece W, and the surface of the pedestal 3 is 3c. Since the concave portion 3b is not formed in the upper portion, there is an advantage that there is no possibility that the pressure is not uniform when the glass substrate is bonded.
Example 3
In the third embodiment, as shown in FIG. 6 to FIG. 7, the plurality of power supply portions 1c are dispersed and disposed on the outer region of the electrostatic chuck functional surface 1' and can be bent, and the power supply portion 1c is along the pedestal 3. The side surface 3d or the back surface 3a is bent and fixed, and the recessed portion 3b formed on the side surface 3d or the back surface 3a facing the power supply portion 1c is formed as a sealing structure that can be opened and closed, and the cut power supply is placed inside. The configuration of the sealing portion 1c' of the portion 1c is different from that of the first embodiment shown in FIGS. 1 to 3 and the second embodiment shown in FIGS. 4 to 5, and the other configuration is the same as that of FIG. 1 to FIG. The first embodiment shown in FIG. 3 is the same as the second embodiment shown in FIGS. 4 to 5.
In the example of the figure, the pedestal 3 is made of metal, and the blocks 4a and 4b which are opened and closed as the insulator 4 made of the above-mentioned insulating material are disposed in the recessed portion 3b, and the cut-off power supply is placed in the blocks 4a and 4b. The cut portion 1c' of the portion 1c is sealed and fixed by an annular seal member 6 such as an O-ring so as to surround the portion 1c.
Further, the ring-shaped sealing material 6 such as an O-ring is disposed between the both sides of the feeding portion 1c and the blocks 4a and 4b. However, according to the experiment, only one of the annular sealing members 6 may be sealed.
Further, the blocks 4a and 4b are not limited to the shapes shown in the drawings, and may be changed to other shapes. The blocks 4a and 4b are detachably coupled by a connecting member 4c such as a screw, but they may be connected by other types.
Therefore, the embodiment 3 shown in FIGS. 6 to 7 has the advantage that the same operational effects as those of the first embodiment and the second embodiment described above can be obtained, and the insulation shown in the first embodiment or the second embodiment is utilized. The covering material 5 such as the adhesive is subjected to the mold processing of the cut portion 1c' of the power supply portion 1c, and the sealing member can be easily and accurately sealed in a short time, and the sealing member can be reused.
Further, although the electrostatic chuck device of the present invention is disposed in the substrate bonding machine, the present invention is not limited thereto, and the substrate assembly device other than the substrate bonding machine or the substrate transfer device that transports the substrate or the LCD panel is disposed. It may be held by electrostatic adsorption on a substrate other than the glass substrate.
Further, although a substrate bonding machine in which a pair of upper and lower substrates are bonded together in a vacuum as the workpiece W has been described, the present invention is not limited thereto, and a substrate bonding machine in which a pair of upper and lower substrates are bonded to each other in the air may be used. The same effects as those of the vacuum laminator described above can also be obtained.
Further, in the above-described embodiment, the above-described region 1a is formed in a rectangular shape. However, the present invention is not limited thereto, and a shape other than the illustrated example such as a fan shape or a concentric shape may be used. Also in this case, the same operational effects as those of the first embodiment and the second embodiment described above can be obtained.
In addition, although the case where the plurality of power supply units 1c or the entire power supply unit 1c are concentrated is disposed, the present invention is not limited thereto, and the entire power supply unit 1c may be disposed so as to be dispersed in an appropriate portion.
Further, the case where the electrode pattern 1b is inserted and sealed between the dielectric layers 2 made of an insulating organic material such as polyimide or polyetheretherketone (PEEK) is not limited thereto, but only A dielectric layer 2 made of an organic material is laminated on the workpiece side surface of the electrode pattern 1b, and a dielectric layer 2 made of an inorganic material is laminated on the back side, or an insulating organic material other than the laminated organic material or other materials is laminated. The insulating layer formed or the dielectric layer 2 made of an inorganic material may be laminated on the workpiece side surface of the electrode pattern 1b.
1. . . electrode
1'. . . Electrostatic chuck function surface
1a. . . region
1b. . . Electrode pattern
1c. . . Power supply department
1c'. . . Cut off part
1d. . . Slit
2. . . Dielectric layer
3. . . Pedestal
3a. . . back
3b. . . Concave
3c. . . surface
3d. . . side
4. . . Insulator
4a, 4b. . . Piece
4c. . . Connecting member
5. . . Covering material
6. . . Ring seal
11. . . Holding plate
11a. . . Substrate side surface
A. . . Electrostatic chuck device
W. . . Workpiece
Fig. 1 is a transverse front view showing a first embodiment of an electrostatic chuck device according to the present invention.
Fig. 2 is a partially broken front elevational view partially enlarged.
Fig. 3 is an enlarged longitudinal side view taken along line (3)-(3) of Fig. 2, wherein (a) shows normal operation and (b) shows that power supply is stopped.
Fig. 4 is a transverse front view showing a second embodiment of the electrostatic chuck device of the present invention.
Fig. 5 is a longitudinal sectional side view showing a main portion of the enlarged portion, wherein (a) indicates normal operation and (b) indicates that power supply is stopped.
Fig. 6 is a partially enlarged longitudinal sectional side view showing a third embodiment of the electrostatic chuck device of the present invention, showing a state in which power supply is stopped.
Fig. 7 is a cross-sectional bottom view of a partially enlarged main portion.
1. . . electrode
1'. . . Electrostatic chuck function surface
1a. . . region
1b. . . Electrode pattern
1c. . . Power supply department
2. . . Dielectric layer
3. . . Pedestal
3b. . . Concave
A. . . Electrostatic chuck device

Claims (4)

  1. An electrostatic chuck device that electrostatically adsorbs a workpiece (W) by applying a voltage to an electrode (1) disposed opposite to a workpiece (W) and configured to be planar, in a plane parallel to the workpiece (W) The electrode (1) is divided into a plurality of regions (1a), and an independent electrode pattern (1b) is disposed in each of the regions (1a), and each electrode pattern (1b) is disposed in each region (1a). The power supply unit (1c) arranges the plurality of power supply units (1c) in close proximity to each other, and forms a slit (1d) along the power supply unit (1c) in the vicinity of the power supply unit (1c) to cut off any power supply. The portion (1c) stops the power supply portion of the electrode pattern (1b) disposed in an arbitrary region.
  2. The electrostatic chuck device of claim 1, wherein the recess (3b) is formed on the pedestal (3) opposite to the power supply portion (1c).
  3. The electrostatic chuck device of claim 2, wherein the selective cut portion (1c') of the power supply portion (1c) is sealed in the recess (3b) of the pedestal (3).
  4. The electrostatic chuck device of 2 or 3, wherein the annular seal member (6) is disposed to be sealed around the selected cut portion (1c') of the power supply portion (1c).
TW95102287A 2005-04-28 2006-01-20 Electrostatic chuck device TWI381479B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2005/008227 WO2006117871A1 (en) 2005-04-28 2005-04-28 Electrostatic chuck apparatus

Publications (2)

Publication Number Publication Date
TW200644148A TW200644148A (en) 2006-12-16
TWI381479B true TWI381479B (en) 2013-01-01

Family

ID=37307678

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95102287A TWI381479B (en) 2005-04-28 2006-01-20 Electrostatic chuck device

Country Status (5)

Country Link
JP (1) JP3995706B2 (en)
KR (1) KR100940549B1 (en)
CN (1) CN100481369C (en)
TW (1) TWI381479B (en)
WO (1) WO2006117871A1 (en)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4976915B2 (en) 2007-05-08 2012-07-18 新光電気工業株式会社 Electrostatic chuck and method of manufacturing electrostatic chuck
WO2010047311A1 (en) * 2008-10-20 2010-04-29 株式会社クリエイティブ テクノロジー Method for inspecting electrostatic chuck, and electrostatic chuck apparatus
JP5508737B2 (en) * 2009-02-24 2014-06-04 東京エレクトロン株式会社 Electrostatic chuck and plasma processing apparatus
JP5328726B2 (en) 2009-08-25 2013-10-30 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
JP5677785B2 (en) 2009-08-27 2015-02-25 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition apparatus and organic light emitting display device manufacturing method using the same
US8876975B2 (en) 2009-10-19 2014-11-04 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101084184B1 (en) 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101174875B1 (en) 2010-01-14 2012-08-17 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101193186B1 (en) 2010-02-01 2012-10-19 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101156441B1 (en) 2010-03-11 2012-06-18 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101202348B1 (en) 2010-04-06 2012-11-16 삼성디스플레이 주식회사 Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same
US8894458B2 (en) 2010-04-28 2014-11-25 Samsung Display Co., Ltd. Thin film deposition apparatus, method of manufacturing organic light-emitting display device by using the apparatus, and organic light-emitting display device manufactured by using the method
KR101223723B1 (en) 2010-07-07 2013-01-18 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101678056B1 (en) 2010-09-16 2016-11-22 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR101723506B1 (en) 2010-10-22 2017-04-19 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101738531B1 (en) 2010-10-22 2017-05-23 삼성디스플레이 주식회사 Method for manufacturing of organic light emitting display apparatus, and organic light emitting display apparatus manufactured by the method
KR20120045865A (en) 2010-11-01 2012-05-09 삼성모바일디스플레이주식회사 Apparatus for organic layer deposition
KR20120065789A (en) 2010-12-13 2012-06-21 삼성모바일디스플레이주식회사 Apparatus for organic layer deposition
KR101760897B1 (en) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 Deposition source and apparatus for organic layer deposition having the same
KR101923174B1 (en) 2011-05-11 2018-11-29 삼성디스플레이 주식회사 ESC, apparatus for thin layer deposition therewith, and method for manufacturing of organic light emitting display apparatus using the same
KR101852517B1 (en) 2011-05-25 2018-04-27 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101840654B1 (en) 2011-05-25 2018-03-22 삼성디스플레이 주식회사 Apparatus for organic layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101857249B1 (en) 2011-05-27 2018-05-14 삼성디스플레이 주식회사 Patterning slit sheet assembly, apparatus for organic layer deposition, method for manufacturing organic light emitting display apparatus and organic light emitting display apparatus
KR20130004830A (en) 2011-07-04 2013-01-14 삼성디스플레이 주식회사 Apparatus for thin layer deposition and method for manufacturing of organic light emitting display apparatus using the same
KR101826068B1 (en) 2011-07-04 2018-02-07 삼성디스플레이 주식회사 Apparatus for thin layer deposition
KR20130069037A (en) 2011-12-16 2013-06-26 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus
US9496524B2 (en) 2012-07-10 2016-11-15 Samsung Display Co., Ltd. Organic layer deposition apparatus, method of manufacturing organic light-emitting display apparatus using the same, and organic light-emitting display apparatus manufactured using the method
KR101959974B1 (en) 2012-07-10 2019-07-16 삼성디스플레이 주식회사 Apparatus for organic layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus manufactured by the method
KR102013318B1 (en) 2012-09-20 2019-08-23 삼성디스플레이 주식회사 Apparatus for thin layer deposition, method for manufacturing of organic light emitting display apparatus using the same, and organic light emitting display apparatus
KR102108361B1 (en) 2013-06-24 2020-05-11 삼성디스플레이 주식회사 Apparatus for monitoring deposition rate, apparatus for organic layer deposition using the same, method for monitoring deposition rate, and method for manufacturing of organic light emitting display apparatus using the same
KR102162797B1 (en) 2013-12-23 2020-10-08 삼성디스플레이 주식회사 Method for manufacturing of organic light emitting display apparatus
KR102155584B1 (en) * 2018-06-25 2020-09-14 (주) 엔피홀딩스 preventing diffused reflection type electro static chuck of laminating apparatus and laminating apparatus
KR102155583B1 (en) * 2018-06-25 2020-09-14 (주) 엔피홀딩스 Back electrodes type electro static chuck of laminating apparatus, its manufacturing method and laminating apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291562A (en) * 1992-04-09 1993-11-05 Toshiba Corp Electrostatic chuck device
TW399281B (en) * 1997-03-28 2000-07-21 Applied Materials Inc Electrostatic chuck having a unidirectionally conducting coupler layer
TW200301001A (en) * 2001-12-04 2003-06-16 Toto Ltd Electrostatic clampless holder module and cooling system

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100511854B1 (en) * 2002-06-18 2005-09-02 아네르바 가부시키가이샤 Electrostatic chuck device
CN100345274C (en) * 2003-02-27 2007-10-24 株式会社日立高新技术 Method of producing electrostatic suction cup
JP5004436B2 (en) * 2005-05-23 2012-08-22 東京エレクトロン株式会社 Electrostatic adsorption electrode and processing device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05291562A (en) * 1992-04-09 1993-11-05 Toshiba Corp Electrostatic chuck device
TW399281B (en) * 1997-03-28 2000-07-21 Applied Materials Inc Electrostatic chuck having a unidirectionally conducting coupler layer
TW200301001A (en) * 2001-12-04 2003-06-16 Toto Ltd Electrostatic clampless holder module and cooling system

Also Published As

Publication number Publication date
KR100940549B1 (en) 2010-02-10
TW200644148A (en) 2006-12-16
CN100481369C (en) 2009-04-22
JP3995706B2 (en) 2007-10-24
JPWO2006117871A1 (en) 2008-12-18
CN101167174A (en) 2008-04-23
KR20080009285A (en) 2008-01-28
WO2006117871A1 (en) 2006-11-09

Similar Documents

Publication Publication Date Title
US10707060B2 (en) Method and apparatus for plasma dicing a semi-conductor wafer
US9343365B2 (en) Method and apparatus for plasma dicing a semi-conductor wafer
KR101212246B1 (en) bipolar electrostatic chuck
US8691702B2 (en) Method and apparatus for plasma dicing a semi-conductor wafer
US8879233B2 (en) Electrostatic chuck with polymer protrusions
KR100238629B1 (en) Stage having eletrostatic chuck and plasma processing apparatus using same
JP3238925B2 (en) Electrostatic chuck
JP4878109B2 (en) Substrate transfer system and substrate transfer method
US9202737B2 (en) Method and apparatus for plasma dicing a semi-conductor wafer
KR101559947B1 (en) Electrostatic chuck, and method for manufacturing the chuck
US8730644B2 (en) Bipolar electrostatic chuck
CN100356549C (en) Method of cutting semiconductor wafer and protective sheet used in the cutting method
EP2400536B1 (en) Wafer conveying tray and method of securing wafer on tray
KR102103129B1 (en) Method and apparatus for plasma dicing a semiconductor wafer
CN110767596A (en) Electrostatic chuck
KR100994299B1 (en) Electrode sheet for electrostatic chuck, and electrostatic chuck
TWI390698B (en) Electrostatic chuck device
KR101416152B1 (en) Electrostatic chuck
US8848335B2 (en) Electrostatic chuck
KR101415551B1 (en) Electrostatic chuck, method of manufacturing the same and apparatus for processing a substrate including the same
US9502220B2 (en) Plasma processing apparatus and plasma processing method
CN105308726B (en) Method and apparatus for carrying out plasma section to semiconductor wafer
JP4546483B2 (en) Manufacturing method of semiconductor chip
CN100499073C (en) Manufacturing method for semiconductor chips
JP2008166774A (en) Semiconductor die pickup device and method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees