KR101947524B1 - 재료 제거 및 패턴 전사를 위한 방법 및 시스템 - Google Patents

재료 제거 및 패턴 전사를 위한 방법 및 시스템 Download PDF

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KR101947524B1
KR101947524B1 KR1020127021126A KR20127021126A KR101947524B1 KR 101947524 B1 KR101947524 B1 KR 101947524B1 KR 1020127021126 A KR1020127021126 A KR 1020127021126A KR 20127021126 A KR20127021126 A KR 20127021126A KR 101947524 B1 KR101947524 B1 KR 101947524B1
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substrate
vuv
layer
delete delete
radiation
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KR20120125297A (ko
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제라드 엠. 슈미드
마이클 엔. 밀러
병진 최
다글라스 제이. 레스닉
시들가타 브이. 스리니바산
프랭크 와이. 쑤
다렌 디. 도날드슨
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캐논 나노테크놀로지즈 인코퍼레이티드
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G03F7/0022—Devices or apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
KR1020127021126A 2010-01-27 2011-01-27 재료 제거 및 패턴 전사를 위한 방법 및 시스템 Active KR101947524B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US29873410P 2010-01-27 2010-01-27
US61/298,734 2010-01-27
US29909710P 2010-01-28 2010-01-28
US61/299,097 2010-01-28
US13/014,508 US8980751B2 (en) 2010-01-27 2011-01-26 Methods and systems of material removal and pattern transfer
US13/014,508 2011-01-26
PCT/US2011/022679 WO2011094383A2 (en) 2010-01-27 2011-01-27 Methods and systems of material removal and pattern transfer

Publications (2)

Publication Number Publication Date
KR20120125297A KR20120125297A (ko) 2012-11-14
KR101947524B1 true KR101947524B1 (ko) 2019-02-13

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KR1020127021126A Active KR101947524B1 (ko) 2010-01-27 2011-01-27 재료 제거 및 패턴 전사를 위한 방법 및 시스템

Country Status (7)

Country Link
US (1) US8980751B2 (https=)
JP (1) JP5782460B2 (https=)
KR (1) KR101947524B1 (https=)
CN (1) CN102859436B (https=)
SG (1) SG181560A1 (https=)
TW (1) TWI551386B (https=)
WO (1) WO2011094383A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110048518A1 (en) * 2009-08-26 2011-03-03 Molecular Imprints, Inc. Nanostructured thin film inorganic solar cells
US9070803B2 (en) 2010-05-11 2015-06-30 Molecular Imprints, Inc. Nanostructured solar cell
JP5634313B2 (ja) * 2011-03-29 2014-12-03 富士フイルム株式会社 レジストパターン形成方法およびそれを用いたパターン化基板の製造方法
US9616614B2 (en) 2012-02-22 2017-04-11 Canon Nanotechnologies, Inc. Large area imprint lithography
US11669009B2 (en) 2016-08-03 2023-06-06 Board Of Regents, The University Of Texas System Roll-to-roll programmable film imprint lithography

Citations (7)

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JP2000216128A (ja) * 1999-01-26 2000-08-04 Hitachi Electronics Eng Co Ltd 紫外線照射による基板処理装置
US20060046470A1 (en) 2004-09-01 2006-03-02 Becknell Alan F Apparatus and plasma ashing process for increasing photoresist removal rate
US20060141778A1 (en) 2002-02-14 2006-06-29 Nec Electronics Corporation Manufacturing method of semiconductor device
US20070138405A1 (en) 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
JP2008091685A (ja) * 2006-10-03 2008-04-17 Seiko Epson Corp 素子基板およびその製造方法
JP2009034926A (ja) * 2007-08-02 2009-02-19 Sumitomo Electric Ind Ltd 樹脂パターン形成方法
JP2009298068A (ja) * 2008-06-16 2009-12-24 Fujifilm Corp パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体

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DE4113523A1 (de) 1991-04-25 1992-10-29 Abb Patent Gmbh Verfahren zur behandlung von oberflaechen
JPH09123206A (ja) 1995-10-30 1997-05-13 Towa Kk 電子部品の樹脂封止成形装置
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
DE19957034B4 (de) 1999-11-26 2006-04-13 Heraeus Noblelight Gmbh Verfahren zur Behandlung von Oberflächen von Substraten und Vorrichtung
JP2003337432A (ja) 2002-05-20 2003-11-28 Tsukuba Semi Technology:Kk 機能水を使ったレジスト除去方法、およびその装置
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6936194B2 (en) 2002-09-05 2005-08-30 Molecular Imprints, Inc. Functional patterning material for imprint lithography processes
WO2004027810A2 (en) * 2002-09-20 2004-04-01 Thomas Johnston System and method for removal of materials from an article
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US20040065252A1 (en) 2002-10-04 2004-04-08 Sreenivasan Sidlgata V. Method of forming a layer on a substrate to facilitate fabrication of metrology standards
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
DE10343323A1 (de) 2003-09-11 2005-04-07 Carl Zeiss Smt Ag Stempellithografieverfahren sowie Vorrichtung und Stempel für die Stempellithografie
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7029992B2 (en) 2004-08-17 2006-04-18 Taiwan Semiconductor Manufacturing Company Low oxygen content photoresist stripping process for low dielectric constant materials
EP1731962B1 (en) * 2005-06-10 2008-12-31 Obducat AB Pattern replication with intermediate stamp
US7832416B2 (en) 2006-10-10 2010-11-16 Hewlett-Packard Development Company, L.P. Imprint lithography apparatus and methods
KR100796047B1 (ko) * 2006-11-21 2008-01-21 제일모직주식회사 레지스트 하층막용 하드마스크 조성물, 이를 이용한 반도체집적회로 디바이스의 제조방법 및 그로부터 제조된 반도체집적회로 디바이스
US8337959B2 (en) 2006-11-28 2012-12-25 Nanonex Corporation Method and apparatus to apply surface release coating for imprint mold
US20080302400A1 (en) 2007-06-05 2008-12-11 Thomas Johnston System and Method for Removal of Materials from an Article
US20090166317A1 (en) * 2007-12-26 2009-07-02 Canon Kabushiki Kaisha Method of processing substrate by imprinting
US8394203B2 (en) 2008-10-02 2013-03-12 Molecular Imprints, Inc. In-situ cleaning of an imprint lithography tool

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216128A (ja) * 1999-01-26 2000-08-04 Hitachi Electronics Eng Co Ltd 紫外線照射による基板処理装置
US20060141778A1 (en) 2002-02-14 2006-06-29 Nec Electronics Corporation Manufacturing method of semiconductor device
US20060046470A1 (en) 2004-09-01 2006-03-02 Becknell Alan F Apparatus and plasma ashing process for increasing photoresist removal rate
US20070138405A1 (en) 2005-12-16 2007-06-21 3M Innovative Properties Company Corona etching
JP2008091685A (ja) * 2006-10-03 2008-04-17 Seiko Epson Corp 素子基板およびその製造方法
JP2009034926A (ja) * 2007-08-02 2009-02-19 Sumitomo Electric Ind Ltd 樹脂パターン形成方法
JP2009298068A (ja) * 2008-06-16 2009-12-24 Fujifilm Corp パターン形成方法、並びに基板加工方法、モールド構造体の複製方法、及びモールド構造体

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JP5782460B2 (ja) 2015-09-24
US20110183521A1 (en) 2011-07-28
TWI551386B (zh) 2016-10-01
KR20120125297A (ko) 2012-11-14
TW201139032A (en) 2011-11-16
JP2013518446A (ja) 2013-05-20
CN102859436A (zh) 2013-01-02
WO2011094383A2 (en) 2011-08-04
SG181560A1 (en) 2012-07-30
US8980751B2 (en) 2015-03-17
WO2011094383A3 (en) 2011-09-29
CN102859436B (zh) 2015-07-15

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