KR101927784B1 - 개선된 균일도의 스캔된 이온 빔 - Google Patents

개선된 균일도의 스캔된 이온 빔 Download PDF

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Publication number
KR101927784B1
KR101927784B1 KR1020137028937A KR20137028937A KR101927784B1 KR 101927784 B1 KR101927784 B1 KR 101927784B1 KR 1020137028937 A KR1020137028937 A KR 1020137028937A KR 20137028937 A KR20137028937 A KR 20137028937A KR 101927784 B1 KR101927784 B1 KR 101927784B1
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South Korea
Prior art keywords
ion beam
axis
workpiece
scanned
along
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KR1020137028937A
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Korean (ko)
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KR20140030173A (ko
Inventor
에드워드 에이스너
앤디 레이
보 반더버그
Original Assignee
액셀리스 테크놀러지스, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/02—Irradiation devices having no beam-forming means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
KR1020137028937A 2011-03-31 2012-03-29 개선된 균일도의 스캔된 이온 빔 Active KR101927784B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/077,112 US8378313B2 (en) 2011-03-31 2011-03-31 Uniformity of a scanned ion beam
US13/077,112 2011-03-31
PCT/US2012/000178 WO2012134600A1 (en) 2011-03-31 2012-03-29 Improved uniformity of a scanned ion beam

Publications (2)

Publication Number Publication Date
KR20140030173A KR20140030173A (ko) 2014-03-11
KR101927784B1 true KR101927784B1 (ko) 2018-12-12

Family

ID=46062725

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137028937A Active KR101927784B1 (ko) 2011-03-31 2012-03-29 개선된 균일도의 스캔된 이온 빔

Country Status (6)

Country Link
US (1) US8378313B2 (enExample)
JP (1) JP6152087B2 (enExample)
KR (1) KR101927784B1 (enExample)
CN (1) CN103477416B (enExample)
TW (1) TWI600045B (enExample)
WO (1) WO2012134600A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6415090B2 (ja) * 2014-04-23 2018-10-31 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US10328529B2 (en) * 2015-08-26 2019-06-25 Electro Scientific Industries, Inc Laser scan sequencing and direction with respect to gas flow
CN106816367A (zh) * 2016-03-29 2017-06-09 长沙学院 一种控制离子圆形注入的二维扫描装置
CN110600354B (zh) * 2019-10-03 2021-12-28 山东昆仲信息科技有限公司 一种芯片生产用离子注入设备
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003132835A (ja) 2001-10-26 2003-05-09 Nissin Electric Co Ltd イオン注入方法およびその装置
JP2006019048A (ja) 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
US4736107A (en) 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
AU2002231340A1 (en) * 2000-12-27 2002-07-08 Proteros, Llc Compact beamline and ion implanter system using same
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP4133883B2 (ja) * 2003-12-04 2008-08-13 日新イオン機器株式会社 イオンビーム装置
US6992308B2 (en) 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
US7078707B1 (en) * 2005-01-04 2006-07-18 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US7498590B2 (en) * 2006-06-23 2009-03-03 Varian Semiconductor Equipment Associates, Inc. Scan pattern for an ion implanter
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
JP2011086643A (ja) 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003132835A (ja) 2001-10-26 2003-05-09 Nissin Electric Co Ltd イオン注入方法およびその装置
JP2006019048A (ja) 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法

Also Published As

Publication number Publication date
TWI600045B (zh) 2017-09-21
JP2014509778A (ja) 2014-04-21
CN103477416A (zh) 2013-12-25
JP6152087B2 (ja) 2017-06-21
US20120248326A1 (en) 2012-10-04
TW201250762A (en) 2012-12-16
WO2012134600A1 (en) 2012-10-04
KR20140030173A (ko) 2014-03-11
US8378313B2 (en) 2013-02-19
CN103477416B (zh) 2016-03-16

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