WO2012134600A1 - Improved uniformity of a scanned ion beam - Google Patents

Improved uniformity of a scanned ion beam Download PDF

Info

Publication number
WO2012134600A1
WO2012134600A1 PCT/US2012/000178 US2012000178W WO2012134600A1 WO 2012134600 A1 WO2012134600 A1 WO 2012134600A1 US 2012000178 W US2012000178 W US 2012000178W WO 2012134600 A1 WO2012134600 A1 WO 2012134600A1
Authority
WO
WIPO (PCT)
Prior art keywords
ion beam
axis
scanned
along
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2012/000178
Other languages
English (en)
French (fr)
Inventor
Edward Eisner
Andy Ray
Bo Vanderberg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Priority to CN201280017078.3A priority Critical patent/CN103477416B/zh
Priority to JP2014502556A priority patent/JP6152087B2/ja
Priority to KR1020137028937A priority patent/KR101927784B1/ko
Publication of WO2012134600A1 publication Critical patent/WO2012134600A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/02—Irradiation devices having no beam-forming means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning

Definitions

  • FIG. 3 illustrates one embodiment of an ion implantation system 300 operable to carry out scanning techniques in accordance with some aspects of the invention.
  • the ion implantation system 300 includes a source terminal 302, a beamline assembly 304, a scan system 306, and an end station 308, which are collectively arranged so as to inject ions (dopants) into the lattice of a workpiece 310 according to a desired dosing profile.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
PCT/US2012/000178 2011-03-31 2012-03-29 Improved uniformity of a scanned ion beam Ceased WO2012134600A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201280017078.3A CN103477416B (zh) 2011-03-31 2012-03-29 扫描离子束的改善均匀性
JP2014502556A JP6152087B2 (ja) 2011-03-31 2012-03-29 走査されたイオンビームの均一性改善
KR1020137028937A KR101927784B1 (ko) 2011-03-31 2012-03-29 개선된 균일도의 스캔된 이온 빔

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/077,112 US8378313B2 (en) 2011-03-31 2011-03-31 Uniformity of a scanned ion beam
US13/077,112 2011-03-31

Publications (1)

Publication Number Publication Date
WO2012134600A1 true WO2012134600A1 (en) 2012-10-04

Family

ID=46062725

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/000178 Ceased WO2012134600A1 (en) 2011-03-31 2012-03-29 Improved uniformity of a scanned ion beam

Country Status (6)

Country Link
US (1) US8378313B2 (enExample)
JP (1) JP6152087B2 (enExample)
KR (1) KR101927784B1 (enExample)
CN (1) CN103477416B (enExample)
TW (1) TWI600045B (enExample)
WO (1) WO2012134600A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6415090B2 (ja) * 2014-04-23 2018-10-31 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US10328529B2 (en) * 2015-08-26 2019-06-25 Electro Scientific Industries, Inc Laser scan sequencing and direction with respect to gas flow
CN106816367A (zh) * 2016-03-29 2017-06-09 长沙学院 一种控制离子圆形注入的二维扫描装置
CN110600354B (zh) * 2019-10-03 2021-12-28 山东昆仲信息科技有限公司 一种芯片生产用离子注入设备
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
WO2002052609A2 (en) * 2000-12-27 2002-07-04 Proteros, Llc Compact beamline and ion implanter system using same
US20080073575A1 (en) * 2006-06-23 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Scan pattern for an ion implanter

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP4133883B2 (ja) * 2003-12-04 2008-08-13 日新イオン機器株式会社 イオンビーム装置
US6992308B2 (en) 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
JP2006019048A (ja) * 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法
US7078707B1 (en) * 2005-01-04 2006-07-18 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
JP2011086643A (ja) 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) * 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
US4736107A (en) * 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
WO2002052609A2 (en) * 2000-12-27 2002-07-04 Proteros, Llc Compact beamline and ion implanter system using same
US20080073575A1 (en) * 2006-06-23 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Scan pattern for an ion implanter

Also Published As

Publication number Publication date
KR101927784B1 (ko) 2018-12-12
TWI600045B (zh) 2017-09-21
JP2014509778A (ja) 2014-04-21
CN103477416A (zh) 2013-12-25
JP6152087B2 (ja) 2017-06-21
US20120248326A1 (en) 2012-10-04
TW201250762A (en) 2012-12-16
KR20140030173A (ko) 2014-03-11
US8378313B2 (en) 2013-02-19
CN103477416B (zh) 2016-03-16

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