TWI600045B - 掃描式離子射束的經改良均勻度 - Google Patents

掃描式離子射束的經改良均勻度 Download PDF

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Publication number
TWI600045B
TWI600045B TW101111650A TW101111650A TWI600045B TW I600045 B TWI600045 B TW I600045B TW 101111650 A TW101111650 A TW 101111650A TW 101111650 A TW101111650 A TW 101111650A TW I600045 B TWI600045 B TW I600045B
Authority
TW
Taiwan
Prior art keywords
ion beam
axis
scanned
along
ion
Prior art date
Application number
TW101111650A
Other languages
English (en)
Chinese (zh)
Other versions
TW201250762A (en
Inventor
愛德華 艾斯能
安迪 芮
寶 梵德伯格
Original Assignee
艾克塞利斯科技公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 艾克塞利斯科技公司 filed Critical 艾克塞利斯科技公司
Publication of TW201250762A publication Critical patent/TW201250762A/zh
Application granted granted Critical
Publication of TWI600045B publication Critical patent/TWI600045B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/02—Irradiation devices having no beam-forming means
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/304—Controlling tubes
    • H01J2237/30472—Controlling the beam
    • H01J2237/30483—Scanning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Physical Vapour Deposition (AREA)
TW101111650A 2011-03-31 2012-03-30 掃描式離子射束的經改良均勻度 TWI600045B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/077,112 US8378313B2 (en) 2011-03-31 2011-03-31 Uniformity of a scanned ion beam

Publications (2)

Publication Number Publication Date
TW201250762A TW201250762A (en) 2012-12-16
TWI600045B true TWI600045B (zh) 2017-09-21

Family

ID=46062725

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101111650A TWI600045B (zh) 2011-03-31 2012-03-30 掃描式離子射束的經改良均勻度

Country Status (6)

Country Link
US (1) US8378313B2 (enExample)
JP (1) JP6152087B2 (enExample)
KR (1) KR101927784B1 (enExample)
CN (1) CN103477416B (enExample)
TW (1) TWI600045B (enExample)
WO (1) WO2012134600A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9218941B2 (en) * 2014-01-15 2015-12-22 Axcelis Technologies, Inc. Ion implantation system and method with variable energy control
JP6415090B2 (ja) * 2014-04-23 2018-10-31 住友重機械イオンテクノロジー株式会社 イオン注入装置及びイオン注入方法
US10328529B2 (en) * 2015-08-26 2019-06-25 Electro Scientific Industries, Inc Laser scan sequencing and direction with respect to gas flow
CN106816367A (zh) * 2016-03-29 2017-06-09 长沙学院 一种控制离子圆形注入的二维扫描装置
CN110600354B (zh) * 2019-10-03 2021-12-28 山东昆仲信息科技有限公司 一种芯片生产用离子注入设备
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283631A (en) 1980-02-22 1981-08-11 Varian Associates, Inc. Bean scanning and method of use for ion implantation
US4736107A (en) 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
AU2002231340A1 (en) * 2000-12-27 2002-07-08 Proteros, Llc Compact beamline and ion implanter system using same
JP3692999B2 (ja) * 2001-10-26 2005-09-07 日新イオン機器株式会社 イオン注入方法およびその装置
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
JP4133883B2 (ja) * 2003-12-04 2008-08-13 日新イオン機器株式会社 イオンビーム装置
US6992308B2 (en) 2004-02-27 2006-01-31 Axcelis Technologies, Inc. Modulating ion beam current
US7078714B2 (en) 2004-05-14 2006-07-18 Nissin Ion Equipment Co., Ltd. Ion implanting apparatus
JP2006019048A (ja) * 2004-06-30 2006-01-19 Toshiba Corp イオン注入装置および半導体装置の製造方法
US7078707B1 (en) * 2005-01-04 2006-07-18 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
US7176470B1 (en) 2005-12-22 2007-02-13 Varian Semiconductor Equipment Associates, Inc. Technique for high-efficiency ion implantation
US7498590B2 (en) * 2006-06-23 2009-03-03 Varian Semiconductor Equipment Associates, Inc. Scan pattern for an ion implanter
US7615763B2 (en) * 2006-09-19 2009-11-10 Axcelis Technologies, Inc. System for magnetic scanning and correction of an ion beam
US7589333B2 (en) * 2006-09-29 2009-09-15 Axcelis Technologies, Inc. Methods for rapidly switching off an ion beam
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
JP2011086643A (ja) 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置

Also Published As

Publication number Publication date
KR101927784B1 (ko) 2018-12-12
JP2014509778A (ja) 2014-04-21
CN103477416A (zh) 2013-12-25
JP6152087B2 (ja) 2017-06-21
US20120248326A1 (en) 2012-10-04
TW201250762A (en) 2012-12-16
WO2012134600A1 (en) 2012-10-04
KR20140030173A (ko) 2014-03-11
US8378313B2 (en) 2013-02-19
CN103477416B (zh) 2016-03-16

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