KR101913974B1 - 무선 주파수 스위치들을 제어하기 위한 장치 및 방법들 - Google Patents
무선 주파수 스위치들을 제어하기 위한 장치 및 방법들 Download PDFInfo
- Publication number
- KR101913974B1 KR101913974B1 KR1020177004510A KR20177004510A KR101913974B1 KR 101913974 B1 KR101913974 B1 KR 101913974B1 KR 1020177004510 A KR1020177004510 A KR 1020177004510A KR 20177004510 A KR20177004510 A KR 20177004510A KR 101913974 B1 KR101913974 B1 KR 101913974B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- level shifter
- charge pump
- state
- level
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6872—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor using complementary field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W44/00—Electrical arrangements for controlling or matching impedance
- H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B7/00—Radio transmission systems, i.e. using radiation field
- H04B7/24—Radio transmission systems, i.e. using radiation field for communication between two or more posts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
- H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
- H10W70/65—Shapes or dispositions of interconnections
- H10W70/654—Top-view layouts
- H10W70/656—Fan-in layouts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electronic Switches (AREA)
- Amplifiers (AREA)
- Semiconductor Integrated Circuits (AREA)
- Transceivers (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462034682P | 2014-08-07 | 2014-08-07 | |
| US62/034,682 | 2014-08-07 | ||
| US14/745,818 US9577626B2 (en) | 2014-08-07 | 2015-06-22 | Apparatus and methods for controlling radio frequency switches |
| US14/745,818 | 2015-06-22 | ||
| PCT/US2015/044374 WO2016023007A1 (en) | 2014-08-07 | 2015-08-07 | Apparatus and methods for controlling radio frequency switches |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170041752A KR20170041752A (ko) | 2017-04-17 |
| KR101913974B1 true KR101913974B1 (ko) | 2018-10-31 |
Family
ID=55264687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177004510A Active KR101913974B1 (ko) | 2014-08-07 | 2015-08-07 | 무선 주파수 스위치들을 제어하기 위한 장치 및 방법들 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9577626B2 (https=) |
| JP (1) | JP6401378B2 (https=) |
| KR (1) | KR101913974B1 (https=) |
| CN (1) | CN106575962B (https=) |
| WO (1) | WO2016023007A1 (https=) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7719343B2 (en) | 2003-09-08 | 2010-05-18 | Peregrine Semiconductor Corporation | Low noise charge pump method and apparatus |
| EP3570374B1 (en) * | 2004-06-23 | 2022-04-20 | pSemi Corporation | Integrated rf front end |
| US9577626B2 (en) | 2014-08-07 | 2017-02-21 | Skyworks Solutions, Inc. | Apparatus and methods for controlling radio frequency switches |
| US9871512B2 (en) * | 2014-08-29 | 2018-01-16 | Skyworks Solutions, Inc. | Switch stand-by mode isolation improvement |
| US9467124B2 (en) | 2014-09-30 | 2016-10-11 | Skyworks Solutions, Inc. | Voltage generator with charge pump and related methods and apparatus |
| US9548731B2 (en) | 2015-06-16 | 2017-01-17 | Tagore Technology, Inc. | High performance radio frequency switch |
| US9641178B1 (en) | 2015-06-16 | 2017-05-02 | Tagore Technology, Inc. | Fast Wi-Fi switch with dynamic bias circuit |
| TWI589117B (zh) * | 2015-06-22 | 2017-06-21 | 西凱渥資訊處理科技公司 | 用於控制射頻開關之設備與方法 |
| KR101823269B1 (ko) * | 2016-11-18 | 2018-01-29 | 삼성전기주식회사 | 다이나믹 바이어스를 갖는 고주파 스위치 장치 |
| US10116347B1 (en) * | 2017-01-05 | 2018-10-30 | CoolStar Technology, Inc. | Lossless switch for radio frequency front-end module |
| JP6817081B2 (ja) * | 2017-01-17 | 2021-01-20 | エイブリック株式会社 | レベルシフト回路 |
| JP2018129727A (ja) * | 2017-02-09 | 2018-08-16 | エイブリック株式会社 | レベルシフタ |
| US10277268B2 (en) * | 2017-06-02 | 2019-04-30 | Psemi Corporation | Method and apparatus for switching of shunt and through switches of a transceiver |
| CN110870203B (zh) | 2017-07-06 | 2023-12-12 | 株式会社村田制作所 | 电压供给电路以及高频电路模块 |
| US10475816B2 (en) | 2017-10-06 | 2019-11-12 | Qualcomm Incorporated | Body current bypass resistor |
| US10897246B2 (en) * | 2017-11-10 | 2021-01-19 | Qorvo Us, Inc. | Radio frequency switching circuitry with reduced switching time |
| CN109818588B (zh) * | 2017-11-21 | 2023-08-22 | 锐迪科微电子(上海)有限公司 | 一种射频功率放大器模组 |
| WO2019155239A1 (en) * | 2018-02-12 | 2019-08-15 | Know Moore Ltd | A transistor device |
| US10778206B2 (en) * | 2018-03-20 | 2020-09-15 | Analog Devices Global Unlimited Company | Biasing of radio frequency switches for fast switching |
| US10749512B2 (en) * | 2018-10-08 | 2020-08-18 | Skyworks Solutions, Inc. | Switch control circuitry |
| CN109616071A (zh) * | 2019-01-23 | 2019-04-12 | 常州欣盛微结构电子有限公司 | 用于集成电路可调整临界电压值的电压位准移位器 |
| US20200235741A1 (en) * | 2019-01-23 | 2020-07-23 | Aplus Microstructure Electronics Co., Ltd. | Voltage level shifter with adjustable threshold voltage value for integrated circuit |
| CN110022144A (zh) * | 2019-05-16 | 2019-07-16 | 上海猎芯半导体科技有限公司 | 一种用于射频开关的偏置电路、及射频通信装置 |
| US11431357B2 (en) * | 2019-07-09 | 2022-08-30 | Skyworks Solutions, Inc. | Envelope controlled radio frequency switches |
| US11942972B2 (en) * | 2021-06-28 | 2024-03-26 | Skyworks Solutions, Inc. | Radio frequency switch control circuitry |
| US11967896B2 (en) * | 2021-10-12 | 2024-04-23 | Skyworks Solutions, Inc. | Charging and discharging circuits for assisting charge pumps |
| US11863227B2 (en) | 2021-10-25 | 2024-01-02 | Analog Devices International Unlimited Company | Radio frequency switches with fast switching speed |
| US12598812B2 (en) | 2022-05-16 | 2026-04-07 | Skyworks Solutions, Inc. | Noise reduction in silicon-on-insulator devices |
| US11936293B2 (en) | 2022-06-17 | 2024-03-19 | Infineon Technologies Ag | Regulated charge pump with adaptive drive strength |
| JP2024124785A (ja) | 2023-03-03 | 2024-09-13 | 株式会社東芝 | アンテナチューニングic |
| WO2024258452A1 (en) * | 2023-06-12 | 2024-12-19 | Intel Corporation | Apparatus, system, and method of a digital power amplifier |
| US12413230B2 (en) * | 2023-07-13 | 2025-09-09 | Ememory Technology Inc. | Level shifting circuit |
| FR3161826A1 (fr) * | 2024-04-26 | 2025-10-31 | Stmicroelectronics International N.V. | Commutateur radiofréquence |
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| JP2010103971A (ja) | 2008-09-25 | 2010-05-06 | Toshiba Corp | 高周波半導体スイッチ装置 |
| JP2011015289A (ja) | 2009-07-03 | 2011-01-20 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2011055129A (ja) | 2009-08-31 | 2011-03-17 | Toshiba Corp | 半導体スイッチ |
| JP2013131979A (ja) * | 2011-12-22 | 2013-07-04 | Toshiba Corp | 高周波半導体スイッチ、端末装置 |
| JP2013175834A (ja) * | 2012-02-23 | 2013-09-05 | Hitachi Metals Ltd | 高周波スイッチモジュール |
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| US5553295A (en) | 1994-03-23 | 1996-09-03 | Intel Corporation | Method and apparatus for regulating the output voltage of negative charge pumps |
| JPH09288897A (ja) | 1996-04-19 | 1997-11-04 | Sony Corp | 電圧供給回路 |
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| US9577626B2 (en) | 2014-08-07 | 2017-02-21 | Skyworks Solutions, Inc. | Apparatus and methods for controlling radio frequency switches |
| US9467124B2 (en) | 2014-09-30 | 2016-10-11 | Skyworks Solutions, Inc. | Voltage generator with charge pump and related methods and apparatus |
-
2015
- 2015-06-22 US US14/745,818 patent/US9577626B2/en active Active
- 2015-08-07 CN CN201580045548.0A patent/CN106575962B/zh active Active
- 2015-08-07 WO PCT/US2015/044374 patent/WO2016023007A1/en not_active Ceased
- 2015-08-07 JP JP2017506368A patent/JP6401378B2/ja active Active
- 2015-08-07 KR KR1020177004510A patent/KR101913974B1/ko active Active
-
2017
- 2017-01-11 US US15/403,951 patent/US9847774B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010103971A (ja) | 2008-09-25 | 2010-05-06 | Toshiba Corp | 高周波半導体スイッチ装置 |
| JP2011015289A (ja) | 2009-07-03 | 2011-01-20 | Renesas Electronics Corp | 半導体集積回路装置 |
| JP2011055129A (ja) | 2009-08-31 | 2011-03-17 | Toshiba Corp | 半導体スイッチ |
| JP2013131979A (ja) * | 2011-12-22 | 2013-07-04 | Toshiba Corp | 高周波半導体スイッチ、端末装置 |
| JP2013175834A (ja) * | 2012-02-23 | 2013-09-05 | Hitachi Metals Ltd | 高周波スイッチモジュール |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6401378B2 (ja) | 2018-10-10 |
| CN106575962B (zh) | 2020-05-22 |
| JP2017529752A (ja) | 2017-10-05 |
| WO2016023007A1 (en) | 2016-02-11 |
| CN106575962A (zh) | 2017-04-19 |
| US9577626B2 (en) | 2017-02-21 |
| US9847774B2 (en) | 2017-12-19 |
| KR20170041752A (ko) | 2017-04-17 |
| US20160043710A1 (en) | 2016-02-11 |
| US20170126215A1 (en) | 2017-05-04 |
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| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
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| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
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| A201 | Request for examination | ||
| A302 | Request for accelerated examination | ||
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
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| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
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| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
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| PA0302 | Request for accelerated examination |
St.27 status event code: A-1-2-D10-D17-exm-PA0302 St.27 status event code: A-1-2-D10-D16-exm-PA0302 |
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| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
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| E13-X000 | Pre-grant limitation requested |
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