KR101903188B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101903188B1
KR101903188B1 KR1020120011285A KR20120011285A KR101903188B1 KR 101903188 B1 KR101903188 B1 KR 101903188B1 KR 1020120011285 A KR1020120011285 A KR 1020120011285A KR 20120011285 A KR20120011285 A KR 20120011285A KR 101903188 B1 KR101903188 B1 KR 101903188B1
Authority
KR
South Korea
Prior art keywords
metal film
film
modulus
young
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020120011285A
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English (en)
Korean (ko)
Other versions
KR20120090827A (ko
Inventor
스케히로 야마모토
Original Assignee
에이블릭 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이블릭 가부시키가이샤 filed Critical 에이블릭 가부시키가이샤
Publication of KR20120090827A publication Critical patent/KR20120090827A/ko
Application granted granted Critical
Publication of KR101903188B1 publication Critical patent/KR101903188B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
KR1020120011285A 2011-02-07 2012-02-03 반도체 장치 Expired - Fee Related KR101903188B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011024241A JP5677115B2 (ja) 2011-02-07 2011-02-07 半導体装置
JPJP-P-2011-024241 2011-02-07

Publications (2)

Publication Number Publication Date
KR20120090827A KR20120090827A (ko) 2012-08-17
KR101903188B1 true KR101903188B1 (ko) 2018-10-01

Family

ID=46587796

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120011285A Expired - Fee Related KR101903188B1 (ko) 2011-02-07 2012-02-03 반도체 장치

Country Status (5)

Country Link
US (1) US20120199977A1 (https=)
JP (1) JP5677115B2 (https=)
KR (1) KR101903188B1 (https=)
CN (1) CN102629568B (https=)
TW (1) TW201304011A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5772926B2 (ja) * 2013-01-07 2015-09-02 株式会社デンソー 半導体装置
JP2016143804A (ja) * 2015-02-03 2016-08-08 トヨタ自動車株式会社 半導体装置
JP2017224753A (ja) * 2016-06-16 2017-12-21 セイコーエプソン株式会社 半導体装置及びその製造方法
JP6897141B2 (ja) 2017-02-15 2021-06-30 株式会社デンソー 半導体装置とその製造方法
JP2018186144A (ja) 2017-04-25 2018-11-22 株式会社村田製作所 半導体装置及びパワーアンプモジュール

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050215048A1 (en) 2004-03-23 2005-09-29 Lei Li Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits
US20060091536A1 (en) * 2004-11-02 2006-05-04 Tai-Chun Huang Bond pad structure with stress-buffering layer capping interconnection metal layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09330928A (ja) * 1996-06-13 1997-12-22 Toshiba Corp 配線層の形成方法
JP2005019493A (ja) * 2003-06-24 2005-01-20 Renesas Technology Corp 半導体装置
US6960836B2 (en) * 2003-09-30 2005-11-01 Agere Systems, Inc. Reinforced bond pad
US7656045B2 (en) * 2006-02-23 2010-02-02 Freescale Semiconductor, Inc. Cap layer for an aluminum copper bond pad
TWI316295B (en) * 2006-05-17 2009-10-21 Au Optronics Corp Thin film transistor
JP2009016619A (ja) * 2007-07-05 2009-01-22 Denso Corp 半導体装置及びその製造方法
US8178980B2 (en) * 2008-02-05 2012-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad structure
US8030780B2 (en) * 2008-10-16 2011-10-04 Micron Technology, Inc. Semiconductor substrates with unitary vias and via terminals, and associated systems and methods
US8202741B2 (en) * 2009-03-04 2012-06-19 Koninklijke Philips Electronics N.V. Method of bonding a semiconductor device using a compliant bonding structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050215048A1 (en) 2004-03-23 2005-09-29 Lei Li Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits
US20060091536A1 (en) * 2004-11-02 2006-05-04 Tai-Chun Huang Bond pad structure with stress-buffering layer capping interconnection metal layer

Also Published As

Publication number Publication date
US20120199977A1 (en) 2012-08-09
CN102629568A (zh) 2012-08-08
JP2012164825A (ja) 2012-08-30
TW201304011A (zh) 2013-01-16
CN102629568B (zh) 2016-05-04
KR20120090827A (ko) 2012-08-17
JP5677115B2 (ja) 2015-02-25

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