KR101895834B1 - 검출장치, 계측장치, 노광장치, 물품의 제조방법, 및 계측방법 - Google Patents

검출장치, 계측장치, 노광장치, 물품의 제조방법, 및 계측방법 Download PDF

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KR101895834B1
KR101895834B1 KR1020150123406A KR20150123406A KR101895834B1 KR 101895834 B1 KR101895834 B1 KR 101895834B1 KR 1020150123406 A KR1020150123406 A KR 1020150123406A KR 20150123406 A KR20150123406 A KR 20150123406A KR 101895834 B1 KR101895834 B1 KR 101895834B1
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Korean (ko)
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KR20160029673A (ko
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아키오 아카마츠
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
    • H01L22/12—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020150123406A 2014-09-05 2015-09-01 검출장치, 계측장치, 노광장치, 물품의 제조방법, 및 계측방법 Active KR101895834B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-181599 2014-09-05
JP2014181599A JP6470528B2 (ja) 2014-09-05 2014-09-05 検出装置、計測装置、露光装置、物品の製造方法、および計測方法

Publications (2)

Publication Number Publication Date
KR20160029673A KR20160029673A (ko) 2016-03-15
KR101895834B1 true KR101895834B1 (ko) 2018-09-07

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KR1020150123406A Active KR101895834B1 (ko) 2014-09-05 2015-09-01 검출장치, 계측장치, 노광장치, 물품의 제조방법, 및 계측방법

Country Status (5)

Country Link
US (1) US9534888B2 (https=)
JP (1) JP6470528B2 (https=)
KR (1) KR101895834B1 (https=)
CN (1) CN105467771B (https=)
TW (1) TWI605314B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6685821B2 (ja) * 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
JP7186531B2 (ja) * 2018-07-13 2022-12-09 キヤノン株式会社 露光装置、および物品製造方法
EP3667423B1 (en) * 2018-11-30 2024-04-03 Canon Kabushiki Kaisha Lithography apparatus, determination method, and method of manufacturing an article
JP2022117091A (ja) 2021-01-29 2022-08-10 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法
JP2022187831A (ja) * 2021-06-08 2022-12-20 キヤノン株式会社 計測装置、リソグラフィ装置及び物品の製造方法
KR102524462B1 (ko) * 2022-03-28 2023-04-21 (주)오로스 테크놀로지 오버레이 측정장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389976B1 (ko) * 1995-03-23 2004-05-27 가부시키가이샤 니콘 얼라인먼트방법및장치
JP5571316B2 (ja) 2004-12-27 2014-08-13 エーエスエムエル ネザーランズ ビー．ブイ． 複数の位置調整装置を備えるリソグラフィ装置、及び位置調整測定方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6332303A (ja) 1986-07-25 1988-02-12 Canon Inc アライメント装置
JPH07123103B2 (ja) * 1986-11-26 1995-12-25 株式会社ニコン 位置合わせ装置
US5734478A (en) * 1988-10-12 1998-03-31 Nikon Corporation Projection exposure apparatus
JP2819592B2 (ja) * 1989-03-03 1998-10-30 キヤノン株式会社 位置合わせ装置
JP3033135B2 (ja) * 1990-06-13 2000-04-17 株式会社ニコン 投影露光装置及び方法
JPH0954443A (ja) * 1995-08-18 1997-02-25 Nikon Corp 露光方法及び装置
JP3445100B2 (ja) * 1997-06-02 2003-09-08 キヤノン株式会社 位置検出方法及び位置検出装置
JP2002289495A (ja) * 2001-03-23 2002-10-04 Nikon Corp 露光装置、露光装置の製造方法及びマイクロデバイスの製造方法
JP2009192271A (ja) * 2008-02-12 2009-08-27 Canon Inc 位置検出方法、露光装置、及びデバイス製造方法
NL2008111A (en) * 2011-02-18 2012-08-21 Asml Netherlands Bv Optical apparatus, method of scanning, lithographic apparatus and device manufacturing method.
JP6066627B2 (ja) * 2012-08-23 2017-01-25 キヤノン株式会社 位置検出装置、およびそれを用いたリソグラフィー装置並びにデバイスの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100389976B1 (ko) * 1995-03-23 2004-05-27 가부시키가이샤 니콘 얼라인먼트방법및장치
JP5571316B2 (ja) 2004-12-27 2014-08-13 エーエスエムエル ネザーランズ ビー．ブイ． 複数の位置調整装置を備えるリソグラフィ装置、及び位置調整測定方法

Also Published As

Publication number Publication date
CN105467771B (zh) 2018-02-27
US20160070175A1 (en) 2016-03-10
JP6470528B2 (ja) 2019-02-13
US9534888B2 (en) 2017-01-03
CN105467771A (zh) 2016-04-06
TW201617741A (zh) 2016-05-16
JP2016058452A (ja) 2016-04-21
KR20160029673A (ko) 2016-03-15
TWI605314B (zh) 2017-11-11

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