KR101895035B1 - 3족 질화물 웨이퍼 및 그의 제조 방법 - Google Patents

3족 질화물 웨이퍼 및 그의 제조 방법 Download PDF

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KR101895035B1
KR101895035B1 KR1020157007789A KR20157007789A KR101895035B1 KR 101895035 B1 KR101895035 B1 KR 101895035B1 KR 1020157007789 A KR1020157007789 A KR 1020157007789A KR 20157007789 A KR20157007789 A KR 20157007789A KR 101895035 B1 KR101895035 B1 KR 101895035B1
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group iii
iii nitride
wafer
layer
phosphoric acid
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KR20150088993A (ko
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타다오 하시모토
에드워드 렛츠
시에라 호프
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식스포인트 머터리얼즈 인코퍼레이티드
서울반도체 주식회사
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    • H01L29/2003—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/08—Etching
    • C30B33/10—Etching in solutions or melts
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C30B7/105—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes using ammonia as solvent, i.e. ammonothermal processes
    • H01L21/02013—
    • H01L21/02019—
    • H01L29/201—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020157007789A 2012-08-28 2013-03-15 3족 질화물 웨이퍼 및 그의 제조 방법 Active KR101895035B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261694119P 2012-08-28 2012-08-28
US61/694,119 2012-08-28
PCT/US2013/032006 WO2014035481A1 (en) 2012-08-28 2013-03-15 Group iii nitride wafer and its production method

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KR20150088993A KR20150088993A (ko) 2015-08-04
KR101895035B1 true KR101895035B1 (ko) 2018-09-04

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Country Link
US (2) US8921231B2 (https=)
EP (1) EP2890537A1 (https=)
JP (1) JP6144347B2 (https=)
KR (1) KR101895035B1 (https=)
CN (1) CN104781057B (https=)
IN (1) IN2015DN02030A (https=)
TW (1) TWI621163B (https=)
WO (1) WO2014035481A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9790617B2 (en) * 2006-04-07 2017-10-17 Sixpoint Materials, Inc. Group III nitride bulk crystals and their fabrication method
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
EP2890537A1 (en) 2012-08-28 2015-07-08 Sixpoint Materials Inc. Group iii nitride wafer and its production method
KR102096421B1 (ko) 2012-09-25 2020-04-02 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 결정의 성장 방법
CN104781454A (zh) 2012-09-26 2015-07-15 希波特公司 第iii族氮化物晶片和制造方法与测试方法
CN105917035B (zh) 2014-01-17 2019-06-18 三菱化学株式会社 GaN基板、GaN基板的制造方法、GaN结晶的制造方法和半导体器件的制造方法
JP6292080B2 (ja) * 2014-08-21 2018-03-14 三菱ケミカル株式会社 非極性または半極性ＧａＮ基板
US10355115B2 (en) 2016-12-23 2019-07-16 Sixpoint Materials, Inc. Electronic device using group III nitride semiconductor and its fabrication method
CN106783579B (zh) * 2016-12-29 2019-12-13 苏州纳维科技有限公司 Iii族氮化物衬底及其制备方法
JP2020535092A (ja) 2017-09-26 2020-12-03 シックスポイント マテリアルズ， インコーポレイテッド 超臨界アンモニアの中での窒化ガリウムバルク結晶の成長のための種結晶および製造方法
CN108074834A (zh) * 2018-01-08 2018-05-25 中国电子科技集团公司第四十六研究所 一种用于具有极性的异形晶片的极性面判定方法
KR102126186B1 (ko) * 2018-06-27 2020-06-24 경희대학교 산학협력단 질화 갈륨 기판의 제조 방법
TWI836391B (zh) * 2022-03-29 2024-03-21 兆遠科技股份有限公司 脆軟基板及脆軟基板製作方法
DE102024126609A1 (de) * 2024-09-16 2026-03-19 Ams-Osram International Gmbh Verfahren zur herstellung eines saphirwafers, verfahren zur herstellung von halbleiterbauelementen, saphirwafer und halbleiterbauelement

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010025153A1 (en) * 2008-08-25 2010-03-04 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture

Family Cites Families (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5984998A (en) 1997-11-14 1999-11-16 American Iron And Steel Institute Method and apparatus for off-gas composition sensing
WO2002011947A2 (en) * 2000-08-07 2002-02-14 Memc Electronic Materials, Inc. Method for processing a semiconductor wafer using double-side polishing
US7072034B2 (en) * 2001-06-08 2006-07-04 Kla-Tencor Corporation Systems and methods for inspection of specimen surfaces
TWI277666B (en) 2001-06-06 2007-04-01 Ammono Sp Zoo Process and apparatus for obtaining bulk mono-crystalline gallium-containing nitride
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP4693351B2 (ja) * 2001-10-26 2011-06-01 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン エピタキシャル成長用基板
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US7022992B2 (en) 2002-01-17 2006-04-04 American Air Liquide, Inc. Method and apparatus for real-time monitoring of furnace flue gases
KR101088991B1 (ko) 2002-12-11 2011-12-01 니치아 카가쿠 고교 가부시키가이샤 벌크 단결정 갈륨-함유 질화물의 제조공정
US7098487B2 (en) 2002-12-27 2006-08-29 General Electric Company Gallium nitride crystal and method of making same
US7323256B2 (en) * 2003-11-13 2008-01-29 Cree, Inc. Large area, uniformly low dislocation density GaN substrate and process for making the same
KR100541111B1 (ko) 2004-06-25 2006-01-11 삼성전기주식회사 다파장 반도체 레이저 제조방법
DE102004039076A1 (de) 2004-08-12 2006-02-23 Sms Demag Ag Berührungslose Abgasmessung mittels FTIR-Spektroskopie an metallurgischen Aggregaten
US20060124956A1 (en) 2004-12-13 2006-06-15 Hui Peng Quasi group III-nitride substrates and methods of mass production of the same
JP4849296B2 (ja) 2005-04-11 2012-01-11 日立電線株式会社 ＧａＮ基板
JP4792802B2 (ja) 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
EP1917382A4 (en) 2005-07-08 2009-09-02 Univ California METHOD FOR GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AUTOCLAVE
JP4696886B2 (ja) * 2005-12-08 2011-06-08 日立電線株式会社 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法
US20070138505A1 (en) 2005-12-12 2007-06-21 Kyma Technologies, Inc. Low defect group III nitride films useful for electronic and optoelectronic devices and methods for making the same
JP4803717B2 (ja) 2005-12-13 2011-10-26 株式会社タカトリ ワイヤソー
US7878883B2 (en) 2006-01-26 2011-02-01 Memc Electronics Materials, Inc. Wire saw ingot slicing system and method with ingot preheating, web preheating, slurry temperature control and/or slurry flow rate control
JP4930081B2 (ja) * 2006-04-03 2012-05-09 住友電気工業株式会社 ＧａＮ結晶基板
US8357243B2 (en) 2008-06-12 2013-01-22 Sixpoint Materials, Inc. Method for testing group III-nitride wafers and group III-nitride wafers with test data
US20070234946A1 (en) 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
WO2007125914A1 (ja) 2006-04-28 2007-11-08 Sumitomo Electric Industries, Ltd. 窒化ガリウム結晶を作製する方法および窒化ガリウムウエハ
JP5332168B2 (ja) 2006-11-17 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
US8323406B2 (en) 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
CN100592539C (zh) * 2007-09-12 2010-02-24 泰谷光电科技股份有限公司 发光二极管元件的制造方法
JP4395812B2 (ja) * 2008-02-27 2010-01-13 住友電気工業株式会社 窒化物半導体ウエハ−加工方法
EP2291551B1 (en) * 2008-06-04 2018-04-25 SixPoint Materials, Inc. High-pressure vessel for growing group iii nitride crystals and method of growing group iii nitride crystals using high-pressure vessel and group iii nitride crystal
WO2009149299A1 (en) * 2008-06-04 2009-12-10 Sixpoint Materials Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
JP2011524933A (ja) 2008-06-20 2011-09-08 イネオス ユーエスエイ リミテッド ライアビリティ カンパニー ガス化発酵により二酸化炭素をアルコールに隔離する方法
US20120000415A1 (en) * 2010-06-18 2012-01-05 Soraa, Inc. Large Area Nitride Crystal and Method for Making It
US20100006082A1 (en) 2008-07-11 2010-01-14 Saint-Gobain Abrasives, Inc. Wire slicing system
CN102144052A (zh) 2008-08-07 2011-08-03 Soraa有限公司 大规模氨热制备氮化镓晶棒的方法
US8979999B2 (en) 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8680581B2 (en) * 2008-12-26 2014-03-25 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor and template substrate
JP2012516572A (ja) 2009-01-30 2012-07-19 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション シード層及びシード層の製造方法
WO2010113237A1 (ja) 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP2011100860A (ja) * 2009-11-06 2011-05-19 Sumitomo Electric Ind Ltd イオン注入ｉｉｉ族窒化物半導体基板ならびにｉｉｉ族窒化物半導体層接合基板およびｉｉｉ族窒化物半導体デバイスの製造方法
JP5471387B2 (ja) * 2009-12-09 2014-04-16 三菱化学株式会社 Ｉｉｉ族窒化物結晶半導体基板の製造方法、及びｉｉｉ族窒化物結晶半導体基板
JP5757068B2 (ja) 2010-08-02 2015-07-29 住友電気工業株式会社 ＧａＮ結晶の成長方法
EP2890537A1 (en) 2012-08-28 2015-07-08 Sixpoint Materials Inc. Group iii nitride wafer and its production method
KR102096421B1 (ko) 2012-09-25 2020-04-02 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 결정의 성장 방법
CN104781454A (zh) 2012-09-26 2015-07-15 希波特公司 第iii族氮化物晶片和制造方法与测试方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010025153A1 (en) * 2008-08-25 2010-03-04 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture

Also Published As

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TW201413807A (zh) 2014-04-01
US9543393B2 (en) 2017-01-10
JP2015529626A (ja) 2015-10-08
JP6144347B2 (ja) 2017-06-07
US8921231B2 (en) 2014-12-30
CN104781057A (zh) 2015-07-15
US20140061662A1 (en) 2014-03-06
WO2014035481A1 (en) 2014-03-06
IN2015DN02030A (https=) 2015-08-14
TWI621163B (zh) 2018-04-11
CN104781057B (zh) 2018-04-24
KR20150088993A (ko) 2015-08-04
US20140065796A1 (en) 2014-03-06
EP2890537A1 (en) 2015-07-08

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