KR101894408B1 - 공핍된 이종접합면 및 쉘-부동화된 나노 입자를 지니는 광기전력 장치 - Google Patents
공핍된 이종접합면 및 쉘-부동화된 나노 입자를 지니는 광기전력 장치 Download PDFInfo
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- KR101894408B1 KR101894408B1 KR1020127029025A KR20127029025A KR101894408B1 KR 101894408 B1 KR101894408 B1 KR 101894408B1 KR 1020127029025 A KR1020127029025 A KR 1020127029025A KR 20127029025 A KR20127029025 A KR 20127029025A KR 101894408 B1 KR101894408 B1 KR 101894408B1
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- H—ELECTRICITY
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
- H10F77/1433—Quantum dots
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/661—Chalcogenides
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- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
- C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
- C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
- C09K11/661—Chalcogenides
- C09K11/662—Chalcogenides with zinc or cadmium
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- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/129—Passivating
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- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
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- H—ELECTRICITY
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
- Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
- Y10S977/892—Liquid phase deposition
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32145010P | 2010-04-06 | 2010-04-06 | |
| US61/321,450 | 2010-04-06 | ||
| US33465010P | 2010-05-14 | 2010-05-14 | |
| US61/334,650 | 2010-05-14 | ||
| US12/890,797 | 2010-09-27 | ||
| US12/890,797 US9382474B2 (en) | 2010-04-06 | 2010-09-27 | Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles |
| PCT/US2011/030074 WO2011126778A1 (en) | 2010-04-06 | 2011-03-25 | Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20130098146A KR20130098146A (ko) | 2013-09-04 |
| KR101894408B1 true KR101894408B1 (ko) | 2018-09-03 |
Family
ID=44708204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020127029025A Expired - Fee Related KR101894408B1 (ko) | 2010-04-06 | 2011-03-25 | 공핍된 이종접합면 및 쉘-부동화된 나노 입자를 지니는 광기전력 장치 |
Country Status (11)
| Country | Link |
|---|---|
| US (2) | US9382474B2 (https=) |
| EP (1) | EP2556131B1 (https=) |
| JP (2) | JP6117693B2 (https=) |
| KR (1) | KR101894408B1 (https=) |
| CN (2) | CN106167704B (https=) |
| AU (1) | AU2011238678A1 (https=) |
| BR (1) | BR112012025386A2 (https=) |
| CA (2) | CA3061443C (https=) |
| RU (1) | RU2012131848A (https=) |
| SG (1) | SG184407A1 (https=) |
| WO (1) | WO2011126778A1 (https=) |
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|---|---|---|---|---|
| US9382474B2 (en) | 2010-04-06 | 2016-07-05 | The Governing Council Of The University Of Toronto | Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles |
| US9030189B2 (en) | 2011-08-28 | 2015-05-12 | Edward Hartley Sargent | Quantum dot photo-field-effect transistor |
| US8962378B2 (en) * | 2012-07-16 | 2015-02-24 | The Boeing Company | Photodiode and method for making the same |
| WO2014103609A1 (ja) * | 2012-12-26 | 2014-07-03 | 富士フイルム株式会社 | 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス |
| WO2014130868A1 (en) * | 2013-02-21 | 2014-08-28 | The Governing Council Of The University Of Toronto | Photovoltaic devices with plasmonic nanoparticles |
| RU2532690C1 (ru) * | 2013-04-19 | 2014-11-10 | федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" | Способ создания фотовольтаических ячеек на основе гибридного нанокомпозитного материала |
| WO2015075564A2 (en) | 2013-10-04 | 2015-05-28 | King Abdullah University Of Science And Technology | System and method for making quantum dots |
| ES2776161T3 (es) * | 2013-12-17 | 2020-07-29 | Univ Oxford Innovation Ltd | Dispositivo fotovoltaico que comprende una perovskita de haluro metálico y un agente pasivante |
| US9099663B1 (en) * | 2014-04-21 | 2015-08-04 | Massachusetts Institute Of Technology | Quantum dot solar cells with band alignment engineering |
| CA2948486A1 (en) * | 2014-05-09 | 2015-11-12 | Massachusetts Institute Of Technology | Energy level modification of nanocrystals through ligand exchange |
| CN104393069B (zh) * | 2014-10-24 | 2017-01-18 | 颜步一 | 二氧化钛纳米晶体颗粒及其制备方法以及在太阳能电池上的应用 |
| ES2897928T3 (es) * | 2015-07-10 | 2022-03-03 | Fundacio Inst De Ciencies Fotòniques | Material fotovoltaico y su uso en un dispositivo fotovoltaico |
| KR102446410B1 (ko) * | 2015-09-17 | 2022-09-22 | 삼성전자주식회사 | 광전소자 및 이를 포함하는 전자장치 |
| KR102608507B1 (ko) | 2016-08-30 | 2023-12-01 | 삼성디스플레이 주식회사 | 표시장치 및 그 제조방법 |
| CN106701060A (zh) * | 2016-12-22 | 2017-05-24 | Tcl集团股份有限公司 | 钝化量子点膜及其制备方法 |
| WO2018152494A1 (en) | 2017-02-17 | 2018-08-23 | Nutech Ventures | Passivation of defects in perovskite materials for improved solar cell efficiency and stability |
| CN109988573A (zh) * | 2017-12-29 | 2019-07-09 | Tcl集团股份有限公司 | 复合量子点、量子点固态膜及其应用 |
| CN108893103A (zh) * | 2018-07-11 | 2018-11-27 | 苏州星烁纳米科技有限公司 | 包覆量子点的方法及其制备的产品 |
| US20200067002A1 (en) * | 2018-08-23 | 2020-02-27 | Nanoco 2D Materials Limited | Photodetectors Based on Two-Dimensional Quantum Dots |
| WO2020054764A1 (ja) * | 2018-09-12 | 2020-03-19 | Nsマテリアルズ株式会社 | 赤外線センサ及びその製造方法 |
| US11538948B2 (en) | 2019-06-26 | 2022-12-27 | University Of South Carolina | Quantum dot photovoltaic junctions |
| CN110350045B (zh) * | 2019-07-24 | 2024-05-07 | 中国科学院重庆绿色智能技术研究院 | PbS量子点Si-APD红外探测器及其制备方法 |
| KR20210048289A (ko) * | 2019-10-23 | 2021-05-03 | 삼성전자주식회사 | 수광 소자 |
| CN115477935A (zh) * | 2021-05-31 | 2022-12-16 | Tcl科技集团股份有限公司 | 一种量子点薄膜及其制备方法、量子点发光二极管与显示装置 |
| FR3124799A1 (fr) * | 2021-06-30 | 2023-01-06 | Aledia | Nanoparticule émettrice de lumière et protégée, son procédé de fabrication et son application pour les convertisseurs de rayonnement de dispositif optoélectronique |
| CN114108037B (zh) * | 2021-11-22 | 2023-03-03 | 湖南大学 | 光电阴极及其制备方法、金属锂提取方法及提取装置 |
| CN114188490B (zh) * | 2021-12-10 | 2024-03-12 | 京东方科技集团股份有限公司 | 量子点-半导体复合膜层及其制备方法、量子点发光器件 |
| CN115784630B (zh) * | 2022-11-15 | 2024-03-29 | 湖北大学 | 一种异质结复合薄膜及其制备方法和应用、甲烷气体传感器 |
| CN116814244A (zh) * | 2023-06-28 | 2023-09-29 | 电子科技大学 | 一种铅族核壳结构量子点及其制备方法 |
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| WO2010018490A2 (en) | 2008-08-12 | 2010-02-18 | Nxp B.V. | A photovoltaic cell and a method of manufacturing the same |
| KR101060014B1 (ko) * | 2008-08-28 | 2011-08-26 | 한국표준과학연구원 | 양자점 태양광 소자 및 그 제조방법 |
| US9382474B2 (en) | 2010-04-06 | 2016-07-05 | The Governing Council Of The University Of Toronto | Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles |
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2011
- 2011-03-25 BR BR112012025386A patent/BR112012025386A2/pt not_active Application Discontinuation
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| JP2002111031A (ja) * | 2000-07-28 | 2002-04-12 | Ecole Polytechnic Federal De Lausanne (Epfl) | 固体ヘテロ接合および固体増感(感光性)光起電力セル |
| JP2009537994A (ja) | 2006-05-15 | 2009-10-29 | スティオン コーポレイション | 半導体材料を用いた薄膜光電材料のための方法及び構造 |
| JP5586948B2 (ja) | 2006-05-15 | 2014-09-10 | スティオン コーポレイション | 半導体材料を用いた薄膜光電材料のための方法及び構造 |
| KR100841186B1 (ko) | 2007-03-26 | 2008-06-24 | 삼성전자주식회사 | 다층 쉘 구조의 나노결정 및 그의 제조방법 |
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| SG184407A1 (en) | 2012-11-29 |
| EP2556131A1 (en) | 2013-02-13 |
| EP2556131B1 (en) | 2016-10-12 |
| US9382474B2 (en) | 2016-07-05 |
| CN102859710A (zh) | 2013-01-02 |
| JP2013524530A (ja) | 2013-06-17 |
| JP6117693B2 (ja) | 2017-04-19 |
| WO2011126778A1 (en) | 2011-10-13 |
| KR20130098146A (ko) | 2013-09-04 |
| US20110240106A1 (en) | 2011-10-06 |
| CN106167704B (zh) | 2020-09-04 |
| US20160372616A1 (en) | 2016-12-22 |
| CA3061443A1 (en) | 2011-10-13 |
| CA3061443C (en) | 2022-04-12 |
| CN102859710B (zh) | 2016-10-19 |
| JP2017085113A (ja) | 2017-05-18 |
| AU2011238678A1 (en) | 2012-10-25 |
| BR112012025386A2 (pt) | 2016-06-28 |
| CA2795719C (en) | 2020-01-14 |
| JP6360130B2 (ja) | 2018-07-18 |
| CN106167704A (zh) | 2016-11-30 |
| US10784388B2 (en) | 2020-09-22 |
| RU2012131848A (ru) | 2014-01-27 |
| CA2795719A1 (en) | 2011-10-13 |
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