CN106167704B - 光电装置、纳米颗粒以及形成纳米颗粒的方法 - Google Patents

光电装置、纳米颗粒以及形成纳米颗粒的方法 Download PDF

Info

Publication number
CN106167704B
CN106167704B CN201610694633.6A CN201610694633A CN106167704B CN 106167704 B CN106167704 B CN 106167704B CN 201610694633 A CN201610694633 A CN 201610694633A CN 106167704 B CN106167704 B CN 106167704B
Authority
CN
China
Prior art keywords
quantum dot
shell
anion
nanoparticles
cation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610694633.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN106167704A (zh
Inventor
唐将
安德拉斯·帕坦特亚斯-亚伯拉罕
伊利亚·克雷默
阿伦·巴克浩斯
王西华
拉坦·德博纳斯
爱德华·H·萨金特
康斯坦塔托斯·耶拉西摩斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Toronto
Original Assignee
University of Toronto
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Toronto filed Critical University of Toronto
Publication of CN106167704A publication Critical patent/CN106167704A/zh
Application granted granted Critical
Publication of CN106167704B publication Critical patent/CN106167704B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/123Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433Quantum dots
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661Chalcogenides
    • C09K11/662Chalcogenides with zinc or cadmium
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02Use of particular materials as binders, particle coatings or suspension media therefor
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661Chalcogenides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/129Passivating
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/127Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215Geometries of grid contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/244Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/70Surface textures, e.g. pyramid structures
    • H10F77/707Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/70Nanostructure
    • Y10S977/773Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/84Manufacture, treatment, or detection of nanostructure
    • Y10S977/89Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892Liquid phase deposition
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/948Energy storage/generating using nanostructure, e.g. fuel cell, battery

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
CN201610694633.6A 2010-04-06 2011-03-25 光电装置、纳米颗粒以及形成纳米颗粒的方法 Expired - Fee Related CN106167704B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US32145010P 2010-04-06 2010-04-06
US61/321,450 2010-04-06
US33465010P 2010-05-14 2010-05-14
US61/334,650 2010-05-14
US12/890,797 2010-09-27
US12/890,797 US9382474B2 (en) 2010-04-06 2010-09-27 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
CN201180017884.6A CN102859710B (zh) 2010-04-06 2011-03-25 光电装置、纳米颗粒以及形成纳米颗粒的方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201180017884.6A Division CN102859710B (zh) 2010-04-06 2011-03-25 光电装置、纳米颗粒以及形成纳米颗粒的方法

Publications (2)

Publication Number Publication Date
CN106167704A CN106167704A (zh) 2016-11-30
CN106167704B true CN106167704B (zh) 2020-09-04

Family

ID=44708204

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201610694633.6A Expired - Fee Related CN106167704B (zh) 2010-04-06 2011-03-25 光电装置、纳米颗粒以及形成纳米颗粒的方法
CN201180017884.6A Expired - Fee Related CN102859710B (zh) 2010-04-06 2011-03-25 光电装置、纳米颗粒以及形成纳米颗粒的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201180017884.6A Expired - Fee Related CN102859710B (zh) 2010-04-06 2011-03-25 光电装置、纳米颗粒以及形成纳米颗粒的方法

Country Status (11)

Country Link
US (2) US9382474B2 (https=)
EP (1) EP2556131B1 (https=)
JP (2) JP6117693B2 (https=)
KR (1) KR101894408B1 (https=)
CN (2) CN106167704B (https=)
AU (1) AU2011238678A1 (https=)
BR (1) BR112012025386A2 (https=)
CA (2) CA3061443C (https=)
RU (1) RU2012131848A (https=)
SG (1) SG184407A1 (https=)
WO (1) WO2011126778A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
US9030189B2 (en) 2011-08-28 2015-05-12 Edward Hartley Sargent Quantum dot photo-field-effect transistor
US8962378B2 (en) * 2012-07-16 2015-02-24 The Boeing Company Photodiode and method for making the same
WO2014103609A1 (ja) * 2012-12-26 2014-07-03 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2014130868A1 (en) * 2013-02-21 2014-08-28 The Governing Council Of The University Of Toronto Photovoltaic devices with plasmonic nanoparticles
RU2532690C1 (ru) * 2013-04-19 2014-11-10 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" Способ создания фотовольтаических ячеек на основе гибридного нанокомпозитного материала
WO2015075564A2 (en) 2013-10-04 2015-05-28 King Abdullah University Of Science And Technology System and method for making quantum dots
ES2776161T3 (es) * 2013-12-17 2020-07-29 Univ Oxford Innovation Ltd Dispositivo fotovoltaico que comprende una perovskita de haluro metálico y un agente pasivante
US9099663B1 (en) * 2014-04-21 2015-08-04 Massachusetts Institute Of Technology Quantum dot solar cells with band alignment engineering
CA2948486A1 (en) * 2014-05-09 2015-11-12 Massachusetts Institute Of Technology Energy level modification of nanocrystals through ligand exchange
CN104393069B (zh) * 2014-10-24 2017-01-18 颜步一 二氧化钛纳米晶体颗粒及其制备方法以及在太阳能电池上的应用
ES2897928T3 (es) * 2015-07-10 2022-03-03 Fundacio Inst De Ciencies Fotòniques Material fotovoltaico y su uso en un dispositivo fotovoltaico
KR102446410B1 (ko) * 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
KR102608507B1 (ko) 2016-08-30 2023-12-01 삼성디스플레이 주식회사 표시장치 및 그 제조방법
CN106701060A (zh) * 2016-12-22 2017-05-24 Tcl集团股份有限公司 钝化量子点膜及其制备方法
WO2018152494A1 (en) 2017-02-17 2018-08-23 Nutech Ventures Passivation of defects in perovskite materials for improved solar cell efficiency and stability
CN109988573A (zh) * 2017-12-29 2019-07-09 Tcl集团股份有限公司 复合量子点、量子点固态膜及其应用
CN108893103A (zh) * 2018-07-11 2018-11-27 苏州星烁纳米科技有限公司 包覆量子点的方法及其制备的产品
US20200067002A1 (en) * 2018-08-23 2020-02-27 Nanoco 2D Materials Limited Photodetectors Based on Two-Dimensional Quantum Dots
WO2020054764A1 (ja) * 2018-09-12 2020-03-19 Nsマテリアルズ株式会社 赤外線センサ及びその製造方法
US11538948B2 (en) 2019-06-26 2022-12-27 University Of South Carolina Quantum dot photovoltaic junctions
CN110350045B (zh) * 2019-07-24 2024-05-07 中国科学院重庆绿色智能技术研究院 PbS量子点Si-APD红外探测器及其制备方法
KR20210048289A (ko) * 2019-10-23 2021-05-03 삼성전자주식회사 수광 소자
CN115477935A (zh) * 2021-05-31 2022-12-16 Tcl科技集团股份有限公司 一种量子点薄膜及其制备方法、量子点发光二极管与显示装置
FR3124799A1 (fr) * 2021-06-30 2023-01-06 Aledia Nanoparticule émettrice de lumière et protégée, son procédé de fabrication et son application pour les convertisseurs de rayonnement de dispositif optoélectronique
CN114108037B (zh) * 2021-11-22 2023-03-03 湖南大学 光电阴极及其制备方法、金属锂提取方法及提取装置
CN114188490B (zh) * 2021-12-10 2024-03-12 京东方科技集团股份有限公司 量子点-半导体复合膜层及其制备方法、量子点发光器件
CN115784630B (zh) * 2022-11-15 2024-03-29 湖北大学 一种异质结复合薄膜及其制备方法和应用、甲烷气体传感器
CN116814244A (zh) * 2023-06-28 2023-09-29 电子科技大学 一种铅族核壳结构量子点及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1176646A1 (en) * 2000-07-28 2002-01-30 Ecole Polytechnique Féderale de Lausanne (EPFL) Solid state heterojunction and solid state sensitized photovoltaic cell

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5653209A (en) 1979-10-01 1981-05-12 Kanebo Ltd Composite acrylic fiber having water absorption and its preparation
US6198092B1 (en) * 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration
AU2003262550A1 (en) 2002-08-13 2004-03-03 Agfa-Gevaert Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles
US20050126628A1 (en) 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
EP1590171B1 (en) * 2003-01-22 2011-06-08 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
JP2005159168A (ja) 2003-11-27 2005-06-16 Kyocera Corp 光電変換装置およびその製造方法
AU2005205373B9 (en) * 2004-01-20 2010-06-03 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
JP4639107B2 (ja) 2005-03-31 2011-02-23 富士通株式会社 半導体レーザ及びその製造方法
US7655860B2 (en) * 2005-04-01 2010-02-02 North Carolina State University Nano-structured photovoltaic solar cell and related methods
EP1891686B1 (en) * 2005-06-15 2011-08-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Iii-v semiconductor core-heteroshell nanocrystals, method for their manufacture and their applications
US7385231B2 (en) * 2005-08-31 2008-06-10 Fujifilmcorporation Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
TWI273719B (en) 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
CA2644629A1 (en) 2006-03-23 2008-05-08 Solexant Corporation Photovoltaic device containing nanoparticle sensitized carbon nanotubes
EP2020967B1 (en) 2006-05-12 2020-09-23 Cardinal Health Switzerland 515 GmbH Baloon expandable bioabsorbable drug eluting stent
CN101400512B (zh) 2006-05-15 2013-10-30 思阳公司 利用半导体材料的用于薄膜光生伏打材料的方法和结构
US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8866007B2 (en) * 2006-06-07 2014-10-21 California Institute Of Technology Plasmonic photovoltaics
US7968792B2 (en) 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
KR100841186B1 (ko) 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
WO2009026141A1 (en) * 2007-08-17 2009-02-26 University Of Florida Research Foundation, Inc. Supercrystalline colloidal particles and method of production
JP2011518421A (ja) 2007-12-13 2011-06-23 テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド Iv−vi族の半導体コア−シェルナノ結晶を備える光起電力セル
WO2010018490A2 (en) 2008-08-12 2010-02-18 Nxp B.V. A photovoltaic cell and a method of manufacturing the same
KR101060014B1 (ko) * 2008-08-28 2011-08-26 한국표준과학연구원 양자점 태양광 소자 및 그 제조방법
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1176646A1 (en) * 2000-07-28 2002-01-30 Ecole Polytechnique Féderale de Lausanne (EPFL) Solid state heterojunction and solid state sensitized photovoltaic cell

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"Inorganic surface passivation of PbS nanocrystals resulting in strong photoluminescent emission";M. J. Fernée et al.;《Nanotechnology》;20030930;第14卷(第9期);第1-23页 *
M. J. Fernée et al.."Inorganic surface passivation of PbS nanocrystals resulting in strong photoluminescent emission".《Nanotechnology》.2003,第14卷(第9期),第1-23页. *

Also Published As

Publication number Publication date
SG184407A1 (en) 2012-11-29
EP2556131A1 (en) 2013-02-13
EP2556131B1 (en) 2016-10-12
US9382474B2 (en) 2016-07-05
CN102859710A (zh) 2013-01-02
JP2013524530A (ja) 2013-06-17
JP6117693B2 (ja) 2017-04-19
WO2011126778A1 (en) 2011-10-13
KR20130098146A (ko) 2013-09-04
US20110240106A1 (en) 2011-10-06
US20160372616A1 (en) 2016-12-22
CA3061443A1 (en) 2011-10-13
CA3061443C (en) 2022-04-12
KR101894408B1 (ko) 2018-09-03
CN102859710B (zh) 2016-10-19
JP2017085113A (ja) 2017-05-18
AU2011238678A1 (en) 2012-10-25
BR112012025386A2 (pt) 2016-06-28
CA2795719C (en) 2020-01-14
JP6360130B2 (ja) 2018-07-18
CN106167704A (zh) 2016-11-30
US10784388B2 (en) 2020-09-22
RU2012131848A (ru) 2014-01-27
CA2795719A1 (en) 2011-10-13

Similar Documents

Publication Publication Date Title
CN106167704B (zh) 光电装置、纳米颗粒以及形成纳米颗粒的方法
Huang et al. Facile fabrication of highly efficient ETL-free perovskite solar cells with 20% efficiency by defect passivation and interface engineering
Liu et al. Thermal evaporation and characterization of Sb2Se3 thin film for substrate Sb2Se3/CdS solar cells
Tsujimoto et al. TiO2 surface treatment effects by Mg2+, Ba2+, and Al3+ on Sb2S3 extremely thin absorber solar cells
Chang et al. Improved performance of CuInS2 quantum dot-sensitized solar cells based on a multilayered architecture
US7632701B2 (en) Thin film solar cells by selenization sulfurization using diethyl selenium as a selenium precursor
Seo et al. Enhancing the performance of sensitized solar cells with PbS/CH3NH3PbI3 core/shell quantum dots
JP5782117B2 (ja) 傾斜再結合層によって分離された多重接合を有する光起電デバイス
Eensalu et al. Semitransparent Sb2S3 thin film solar cells by ultrasonic spray pyrolysis for use in solar windows
Li et al. Defects passivation via potassium iodide post‐treatment for antimony selenosulfide solar cells with improved performance
Lee et al. Approach to transparent photovoltaics based on wide band gap Sb2S3 absorber layers and optics-based device optimization
Fan et al. Delayed annealing treatment for high-quality CuSCN: Exploring its impact on bifacial semitransparent nip planar perovskite solar cells
Chandrasekhar et al. Plasmonic silver nanowires for higher efficiency dye-sensitized solar cells
Jiang et al. Engineering the interfaces of ITO@ Cu2S nanowire arrays toward efficient and stable counter electrodes for quantum-dot-sensitized solar cells
Dou et al. Nearly monodisperse PbS quantum dots for highly efficient solar cells: An in situ seeded ion exchange approach
Ito Printable solar cells
Sie et al. Pb5Sb8S17 quantum dot‐sensitized solar cells with an efficiency of 6% under 0.05 sun: T heoretical and experimental studies
KR101628952B1 (ko) 탠덤 태양전지 및 그 제조방법
Lim et al. Enhancing the device performance of Sb 2 S 3-sensitized heterojunction solar cells by embedding Au nanoparticles in the hole-conducting polymer layer
Zhao et al. Improving the performance of Sb2Se3 sensitized solar cells with a versatile CdSe layer modification
HK1181784B (en) Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
KR20170114853A (ko) 태양전지용 광활성층, 이를 포함하는 태양전지, 및 이들의 제조방법
Grätzel et al. DYE-AND PEROVSKITE-SENSITISED MESOSCOPIC SOLAR CELLS
Loucif Narimane Study of perovskite based tandem solar cells
Chandrasekhar et al. Materials Today Energy

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20200904