CA3061443C - Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles - Google Patents

Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles Download PDF

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Publication number
CA3061443C
CA3061443C CA3061443A CA3061443A CA3061443C CA 3061443 C CA3061443 C CA 3061443C CA 3061443 A CA3061443 A CA 3061443A CA 3061443 A CA3061443 A CA 3061443A CA 3061443 C CA3061443 C CA 3061443C
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Prior art keywords
quantum dot
shell
anions
cations
quantum dots
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French (fr)
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CA3061443A1 (en
Inventor
Jiang Tang
Andras Pattantyus-Abraham
Illan Kramer
Aaron Barkhouse
Xihua Wang
Ratan Debnath
Edward H. Sargent
Konstantatos Gerasimos
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University of Toronto
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University of Toronto
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661—Chalcogenides
    • C09K11/662—Chalcogenides with zinc or cadmium
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/66—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/661—Chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/89—Deposition of materials, e.g. coating, cvd, or ald
    • Y10S977/892—Liquid phase deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
CA3061443A 2010-04-06 2011-03-25 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles Active CA3061443C (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US32145010P 2010-04-06 2010-04-06
US61/321,450 2010-04-06
US33465010P 2010-05-14 2010-05-14
US61/334,650 2010-05-14
US12/890,797 2010-09-27
US12/890,797 US9382474B2 (en) 2010-04-06 2010-09-27 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
CA2795719A CA2795719C (en) 2010-04-06 2011-03-25 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

Related Parent Applications (1)

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CA2795719A Division CA2795719C (en) 2010-04-06 2011-03-25 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

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CA3061443A1 CA3061443A1 (en) 2011-10-13
CA3061443C true CA3061443C (en) 2022-04-12

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CA3061443A Active CA3061443C (en) 2010-04-06 2011-03-25 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
CA2795719A Active CA2795719C (en) 2010-04-06 2011-03-25 Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

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US (2) US9382474B2 (https=)
EP (1) EP2556131B1 (https=)
JP (2) JP6117693B2 (https=)
KR (1) KR101894408B1 (https=)
CN (2) CN106167704B (https=)
AU (1) AU2011238678A1 (https=)
BR (1) BR112012025386A2 (https=)
CA (2) CA3061443C (https=)
RU (1) RU2012131848A (https=)
SG (1) SG184407A1 (https=)
WO (1) WO2011126778A1 (https=)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
US9030189B2 (en) 2011-08-28 2015-05-12 Edward Hartley Sargent Quantum dot photo-field-effect transistor
US8962378B2 (en) * 2012-07-16 2015-02-24 The Boeing Company Photodiode and method for making the same
WO2014103609A1 (ja) * 2012-12-26 2014-07-03 富士フイルム株式会社 半導体膜、半導体膜の製造方法、太陽電池、発光ダイオード、薄膜トランジスタ、および、電子デバイス
WO2014130868A1 (en) * 2013-02-21 2014-08-28 The Governing Council Of The University Of Toronto Photovoltaic devices with plasmonic nanoparticles
RU2532690C1 (ru) * 2013-04-19 2014-11-10 федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский национальный исследовательский университет информационных технологий, механики и оптики" Способ создания фотовольтаических ячеек на основе гибридного нанокомпозитного материала
WO2015075564A2 (en) 2013-10-04 2015-05-28 King Abdullah University Of Science And Technology System and method for making quantum dots
ES2776161T3 (es) * 2013-12-17 2020-07-29 Univ Oxford Innovation Ltd Dispositivo fotovoltaico que comprende una perovskita de haluro metálico y un agente pasivante
US9099663B1 (en) * 2014-04-21 2015-08-04 Massachusetts Institute Of Technology Quantum dot solar cells with band alignment engineering
CA2948486A1 (en) * 2014-05-09 2015-11-12 Massachusetts Institute Of Technology Energy level modification of nanocrystals through ligand exchange
CN104393069B (zh) * 2014-10-24 2017-01-18 颜步一 二氧化钛纳米晶体颗粒及其制备方法以及在太阳能电池上的应用
ES2897928T3 (es) * 2015-07-10 2022-03-03 Fundacio Inst De Ciencies Fotòniques Material fotovoltaico y su uso en un dispositivo fotovoltaico
KR102446410B1 (ko) * 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
KR102608507B1 (ko) 2016-08-30 2023-12-01 삼성디스플레이 주식회사 표시장치 및 그 제조방법
CN106701060A (zh) * 2016-12-22 2017-05-24 Tcl集团股份有限公司 钝化量子点膜及其制备方法
WO2018152494A1 (en) 2017-02-17 2018-08-23 Nutech Ventures Passivation of defects in perovskite materials for improved solar cell efficiency and stability
CN109988573A (zh) * 2017-12-29 2019-07-09 Tcl集团股份有限公司 复合量子点、量子点固态膜及其应用
CN108893103A (zh) * 2018-07-11 2018-11-27 苏州星烁纳米科技有限公司 包覆量子点的方法及其制备的产品
US20200067002A1 (en) * 2018-08-23 2020-02-27 Nanoco 2D Materials Limited Photodetectors Based on Two-Dimensional Quantum Dots
WO2020054764A1 (ja) * 2018-09-12 2020-03-19 Ｎｓマテリアルズ株式会社 赤外線センサ及びその製造方法
US11538948B2 (en) 2019-06-26 2022-12-27 University Of South Carolina Quantum dot photovoltaic junctions
CN110350045B (zh) * 2019-07-24 2024-05-07 中国科学院重庆绿色智能技术研究院 PbS量子点Si-APD红外探测器及其制备方法
KR20210048289A (ko) * 2019-10-23 2021-05-03 삼성전자주식회사 수광 소자
CN115477935A (zh) * 2021-05-31 2022-12-16 Tcl科技集团股份有限公司 一种量子点薄膜及其制备方法、量子点发光二极管与显示装置
FR3124799A1 (fr) * 2021-06-30 2023-01-06 Aledia Nanoparticule émettrice de lumière et protégée, son procédé de fabrication et son application pour les convertisseurs de rayonnement de dispositif optoélectronique
CN114108037B (zh) * 2021-11-22 2023-03-03 湖南大学 光电阴极及其制备方法、金属锂提取方法及提取装置
CN114188490B (zh) * 2021-12-10 2024-03-12 京东方科技集团股份有限公司 量子点-半导体复合膜层及其制备方法、量子点发光器件
CN115784630B (zh) * 2022-11-15 2024-03-29 湖北大学 一种异质结复合薄膜及其制备方法和应用、甲烷气体传感器
CN116814244A (zh) * 2023-06-28 2023-09-29 电子科技大学 一种铅族核壳结构量子点及其制备方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5653209A (en) 1979-10-01 1981-05-12 Kanebo Ltd Composite acrylic fiber having water absorption and its preparation
US6198092B1 (en) * 1998-08-19 2001-03-06 The Trustees Of Princeton University Stacked organic photosensitive optoelectronic devices with an electrically parallel configuration
EP1176646A1 (en) 2000-07-28 2002-01-30 Ecole Polytechnique Féderale de Lausanne (EPFL) Solid state heterojunction and solid state sensitized photovoltaic cell
AU2003262550A1 (en) 2002-08-13 2004-03-03 Agfa-Gevaert Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles
US20050126628A1 (en) 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
EP1590171B1 (en) * 2003-01-22 2011-06-08 The Board Of Trustees Of The University Of Arkansas Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
JP2005159168A (ja) 2003-11-27 2005-06-16 Kyocera Corp 光電変換装置およびその製造方法
AU2005205373B9 (en) * 2004-01-20 2010-06-03 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
GB0409877D0 (en) 2004-04-30 2004-06-09 Univ Manchester Preparation of nanoparticle materials
JP4639107B2 (ja) 2005-03-31 2011-02-23 富士通株式会社 半導体レーザ及びその製造方法
US7655860B2 (en) * 2005-04-01 2010-02-02 North Carolina State University Nano-structured photovoltaic solar cell and related methods
EP1891686B1 (en) * 2005-06-15 2011-08-10 Yissum Research Development Company Of The Hebrew University Of Jerusalem Iii-v semiconductor core-heteroshell nanocrystals, method for their manufacture and their applications
US7385231B2 (en) * 2005-08-31 2008-06-10 Fujifilmcorporation Porous thin-film-deposition substrate, electron emitting element, methods of producing them, and switching element and display element
TWI273719B (en) 2005-12-30 2007-02-11 Ind Tech Res Inst Nanocrystal and photovoltaics applying the same
CA2644629A1 (en) 2006-03-23 2008-05-08 Solexant Corporation Photovoltaic device containing nanoparticle sensitized carbon nanotubes
EP2020967B1 (en) 2006-05-12 2020-09-23 Cardinal Health Switzerland 515 GmbH Baloon expandable bioabsorbable drug eluting stent
CN101400512B (zh) 2006-05-15 2013-10-30 思阳公司 利用半导体材料的用于薄膜光生伏打材料的方法和结构
US9105776B2 (en) 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
US8866007B2 (en) * 2006-06-07 2014-10-21 California Institute Of Technology Plasmonic photovoltaics
US7968792B2 (en) 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
KR100841186B1 (ko) 2007-03-26 2008-06-24 삼성전자주식회사 다층 쉘 구조의 나노결정 및 그의 제조방법
WO2009026141A1 (en) * 2007-08-17 2009-02-26 University Of Florida Research Foundation, Inc. Supercrystalline colloidal particles and method of production
JP2011518421A (ja) 2007-12-13 2011-06-23 テクニオン・リサーチ・アンド・ディベロップメント・ファウンデーション・リミテッド Ｉｖ−ｖｉ族の半導体コア−シェルナノ結晶を備える光起電力セル
WO2010018490A2 (en) 2008-08-12 2010-02-18 Nxp B.V. A photovoltaic cell and a method of manufacturing the same
KR101060014B1 (ko) * 2008-08-28 2011-08-26 한국표준과학연구원 양자점 태양광 소자 및 그 제조방법
US9382474B2 (en) 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles

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