AU2003262550A1 - Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles - Google Patents

Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles

Info

Publication number
AU2003262550A1
AU2003262550A1 AU2003262550A AU2003262550A AU2003262550A1 AU 2003262550 A1 AU2003262550 A1 AU 2003262550A1 AU 2003262550 A AU2003262550 A AU 2003262550A AU 2003262550 A AU2003262550 A AU 2003262550A AU 2003262550 A1 AU2003262550 A1 AU 2003262550A1
Authority
AU
Australia
Prior art keywords
nano
particles
oxide semiconductor
spectrally sensitized
metal oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003262550A
Inventor
Hieronymus Andriessen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Agfa Gevaert AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV, Agfa Gevaert AG filed Critical Agfa Gevaert NV
Publication of AU2003262550A1 publication Critical patent/AU2003262550A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281Shape of the body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20Light-sensitive devices
    • H01G9/2027Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H01M14/005Photoelectrochemical storage cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/542Dye sensitized solar cells
AU2003262550A 2002-08-13 2003-07-29 Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles Abandoned AU2003262550A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP02102130 2002-08-13
EP02102130.8 2002-08-13
PCT/EP2003/050346 WO2004017427A1 (en) 2002-08-13 2003-07-29 Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles

Publications (1)

Publication Number Publication Date
AU2003262550A1 true AU2003262550A1 (en) 2004-03-03

Family

ID=31725483

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003262550A Abandoned AU2003262550A1 (en) 2002-08-13 2003-07-29 Nano-porous metal oxide semiconductor spectrally sensitized with metal chalcogenide nano-particles

Country Status (4)

Country Link
EP (1) EP1547160A1 (en)
JP (1) JP2006501640A (en)
AU (1) AU2003262550A1 (en)
WO (1) WO2004017427A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007098378A1 (en) * 2006-02-16 2007-08-30 Solexant Corp. Nanoparticle sensitized nanostructured solar cells
US9382474B2 (en) * 2010-04-06 2016-07-05 The Governing Council Of The University Of Toronto Photovoltaic devices with depleted heterojunctions and shell-passivated nanoparticles
KR101462020B1 (en) * 2013-11-29 2014-11-19 한국화학연구원 Fabrication Method of Efficient Inorganic/Organic Hybrid Solar Cells Based on Metal Chalcogenide as a Light Harvesters
FR3019540A1 (en) * 2014-04-04 2015-10-09 Rhodia Operations MIXED OXIDES AND SULFIDES OF BISMUTH AND SILVER FOR PHOTOVOLTAIC APPLICATION

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1176646A1 (en) * 2000-07-28 2002-01-30 Ecole Polytechnique Féderale de Lausanne (EPFL) Solid state heterojunction and solid state sensitized photovoltaic cell

Also Published As

Publication number Publication date
JP2006501640A (en) 2006-01-12
EP1547160A1 (en) 2005-06-29
WO2004017427A1 (en) 2004-02-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase