KR101883840B1 - 발광소자 - Google Patents

발광소자 Download PDF

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Publication number
KR101883840B1
KR101883840B1 KR1020110087852A KR20110087852A KR101883840B1 KR 101883840 B1 KR101883840 B1 KR 101883840B1 KR 1020110087852 A KR1020110087852 A KR 1020110087852A KR 20110087852 A KR20110087852 A KR 20110087852A KR 101883840 B1 KR101883840 B1 KR 101883840B1
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KR
South Korea
Prior art keywords
plane
buffer layer
light emitting
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020110087852A
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English (en)
Korean (ko)
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KR20130024411A (ko
Inventor
심희재
Original Assignee
엘지이노텍 주식회사
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Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020110087852A priority Critical patent/KR101883840B1/ko
Priority to EP12151755.1A priority patent/EP2565940B1/en
Priority to US13/363,096 priority patent/US8729576B2/en
Priority to CN2012100281805A priority patent/CN102969420A/zh
Priority to TW101104335A priority patent/TWI539623B/zh
Priority to JP2012057736A priority patent/JP6005372B2/ja
Publication of KR20130024411A publication Critical patent/KR20130024411A/ko
Application granted granted Critical
Publication of KR101883840B1 publication Critical patent/KR101883840B1/ko
Assigned to 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 reassignment 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 권리의 전부이전등록 Assignors: 엘지이노텍 주식회사
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
KR1020110087852A 2011-08-31 2011-08-31 발광소자 Expired - Fee Related KR101883840B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자
EP12151755.1A EP2565940B1 (en) 2011-08-31 2012-01-19 Light emitting device
US13/363,096 US8729576B2 (en) 2011-08-31 2012-01-31 Light emitting device
CN2012100281805A CN102969420A (zh) 2011-08-31 2012-02-03 发光装置
TW101104335A TWI539623B (zh) 2011-08-31 2012-02-10 發光元件
JP2012057736A JP6005372B2 (ja) 2011-08-31 2012-03-14 発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Publications (2)

Publication Number Publication Date
KR20130024411A KR20130024411A (ko) 2013-03-08
KR101883840B1 true KR101883840B1 (ko) 2018-08-01

Family

ID=45528963

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110087852A Expired - Fee Related KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Country Status (6)

Country Link
US (1) US8729576B2 (https=)
EP (1) EP2565940B1 (https=)
JP (1) JP6005372B2 (https=)
KR (1) KR101883840B1 (https=)
CN (1) CN102969420A (https=)
TW (1) TWI539623B (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201408484TA (en) * 2012-06-18 2015-05-28 Government Of The U S A As Represented By The Secretary Of The Navy Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures
US10804426B2 (en) * 2014-10-31 2020-10-13 ehux, Inc. Planar surface mount micro-LED for fluidic assembly
JP6646934B2 (ja) * 2015-02-10 2020-02-14 アルパッド株式会社 半導体発光装置及び半導体発光装置の製造方法
US20180198015A1 (en) * 2015-07-06 2018-07-12 The Hong Kong University Of Science And Technology Semiconductor device and method of forming the same
US10665750B2 (en) * 2017-11-22 2020-05-26 Epistar Corporation Semiconductor device
CN111477726A (zh) * 2019-05-08 2020-07-31 伊乐视有限公司 用于流体组装的平面表面贴装微型led及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005064113A (ja) * 2003-08-08 2005-03-10 Hitachi Cable Ltd 半導体発光素子及びその製造方法

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
JP3779766B2 (ja) * 1996-02-29 2006-05-31 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体装置
JP2001294500A (ja) * 2000-02-07 2001-10-23 Japan Energy Corp 窒化ガリウム系化合物半導体結晶の成長方法
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007103774A (ja) * 2005-10-06 2007-04-19 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
EP1788619A3 (en) * 2005-11-18 2009-09-09 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007165613A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP4888857B2 (ja) * 2006-03-20 2012-02-29 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体薄膜およびｉｉｉ族窒化物半導体発光素子
JP2008042076A (ja) * 2006-08-09 2008-02-21 Matsushita Electric Ind Co Ltd 窒化物半導体発光素子及びその製造方法
JP4605193B2 (ja) * 2007-07-27 2011-01-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP4944738B2 (ja) * 2007-11-13 2012-06-06 古河機械金属株式会社 ＧａＮ半導体基板の製造方法
KR101405693B1 (ko) * 2007-11-26 2014-06-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US8435816B2 (en) * 2008-08-22 2013-05-07 Lattice Power (Jiangxi) Corporation Method for fabricating InGaAlN light emitting device on a combined substrate
JP2010238954A (ja) * 2009-03-31 2010-10-21 Nec Corp 半導体発光素子、光ピックアップ装置、光源装置および半導体発光素子の製造方法
JP5434573B2 (ja) * 2009-12-24 2014-03-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子

Patent Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2005064113A (ja) * 2003-08-08 2005-03-10 Hitachi Cable Ltd 半導体発光素子及びその製造方法

Also Published As

Publication number Publication date
TW201310696A (zh) 2013-03-01
JP2013055319A (ja) 2013-03-21
KR20130024411A (ko) 2013-03-08
US20120138957A1 (en) 2012-06-07
CN102969420A (zh) 2013-03-13
JP6005372B2 (ja) 2016-10-12
EP2565940A3 (en) 2015-02-11
US8729576B2 (en) 2014-05-20
EP2565940A2 (en) 2013-03-06
TWI539623B (zh) 2016-06-21
EP2565940B1 (en) 2016-07-06

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