CN102969420A - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN102969420A
CN102969420A CN2012100281805A CN201210028180A CN102969420A CN 102969420 A CN102969420 A CN 102969420A CN 2012100281805 A CN2012100281805 A CN 2012100281805A CN 201210028180 A CN201210028180 A CN 201210028180A CN 102969420 A CN102969420 A CN 102969420A
Authority
CN
China
Prior art keywords
light
emitting device
semiconductor layer
type semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2012100281805A
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English (en)
Chinese (zh)
Inventor
沈希宰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102969420A publication Critical patent/CN102969420A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Luminescent Compositions (AREA)
CN2012100281805A 2011-08-31 2012-02-03 发光装置 Pending CN102969420A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2011-0087852 2011-08-31
KR1020110087852A KR101883840B1 (ko) 2011-08-31 2011-08-31 발광소자

Publications (1)

Publication Number Publication Date
CN102969420A true CN102969420A (zh) 2013-03-13

Family

ID=45528963

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2012100281805A Pending CN102969420A (zh) 2011-08-31 2012-02-03 发光装置

Country Status (6)

Country Link
US (1) US8729576B2 (https=)
EP (1) EP2565940B1 (https=)
JP (1) JP6005372B2 (https=)
KR (1) KR101883840B1 (https=)
CN (1) CN102969420A (https=)
TW (1) TWI539623B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017005188A1 (en) * 2015-07-06 2017-01-12 The Hong Kong University Of Science And Technology Semiconductor device and method of forming the same
CN109817775A (zh) * 2017-11-22 2019-05-28 晶元光电股份有限公司 半导体元件

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201408484TA (en) * 2012-06-18 2015-05-28 Government Of The U S A As Represented By The Secretary Of The Navy Plasma-assisted atomic layer epitaxy of cubic and hexagonal inn films and its alloys with ain at low temperatures
US10804426B2 (en) * 2014-10-31 2020-10-13 ehux, Inc. Planar surface mount micro-LED for fluidic assembly
JP6646934B2 (ja) * 2015-02-10 2020-02-14 アルパッド株式会社 半導体発光装置及び半導体発光装置の製造方法
CN111477726A (zh) * 2019-05-08 2020-07-31 伊乐视有限公司 用于流体组装的平面表面贴装微型led及其制备方法

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CN101355131A (zh) * 2007-07-27 2009-01-28 丰田合成株式会社 第ⅲ族氮化物基化合物半导体器件
JP2009120425A (ja) * 2007-11-13 2009-06-04 Furukawa Co Ltd ＧａＮ半導体基板の製造方法およびＧａＮ半導体基板
CN102067335A (zh) * 2008-08-22 2011-05-18 晶能光电（江西）有限公司 一种在复合衬底上制备InGaAlN发光器件的方法

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JP3779766B2 (ja) * 1996-02-29 2006-05-31 シャープ株式会社 Ｉｉｉ−ｖ族化合物半導体装置
JP2001294500A (ja) * 2000-02-07 2001-10-23 Japan Energy Corp 窒化ガリウム系化合物半導体結晶の成長方法
JP3963068B2 (ja) * 2000-07-19 2007-08-22 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
GB2398672A (en) * 2003-02-19 2004-08-25 Qinetiq Ltd Group IIIA nitride buffer layers
JP4277617B2 (ja) * 2003-08-08 2009-06-10 日立電線株式会社 半導体発光素子の製造方法
KR100718188B1 (ko) * 2004-05-07 2007-05-15 삼성코닝 주식회사 비극성 ａ면 질화물 반도체 단결정 기판 및 이의 제조방법
JP2006324465A (ja) * 2005-05-19 2006-11-30 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2007103774A (ja) * 2005-10-06 2007-04-19 Showa Denko Kk Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
EP1788619A3 (en) * 2005-11-18 2009-09-09 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
JP5113330B2 (ja) * 2005-11-30 2013-01-09 ローム株式会社 窒化ガリウム半導体発光素子
JP2007165613A (ja) * 2005-12-14 2007-06-28 Showa Denko Kk 窒化ガリウム系化合物半導体発光素子及びその製造方法
JP2007243006A (ja) * 2006-03-10 2007-09-20 Kyocera Corp 窒化物系半導体の気相成長方法、及び、エピタキシャル基板とそれを用いた半導体装置
JP4888857B2 (ja) * 2006-03-20 2012-02-29 国立大学法人徳島大学 Ｉｉｉ族窒化物半導体薄膜およびｉｉｉ族窒化物半導体発光素子
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101355131A (zh) * 2007-07-27 2009-01-28 丰田合成株式会社 第ⅲ族氮化物基化合物半导体器件
JP2009120425A (ja) * 2007-11-13 2009-06-04 Furukawa Co Ltd ＧａＮ半導体基板の製造方法およびＧａＮ半導体基板
CN102067335A (zh) * 2008-08-22 2011-05-18 晶能光电（江西）有限公司 一种在复合衬底上制备InGaAlN发光器件的方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
C.F. JOHNSTON, ET AL: "Assessment of defect reduction methods for nonpolar a-plane GaN grown on r-plane sapphire", 《JOURNAL OF CRYSTAL GROWTH》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017005188A1 (en) * 2015-07-06 2017-01-12 The Hong Kong University Of Science And Technology Semiconductor device and method of forming the same
CN109817775A (zh) * 2017-11-22 2019-05-28 晶元光电股份有限公司 半导体元件
CN109817775B (zh) * 2017-11-22 2022-11-08 晶元光电股份有限公司 半导体元件

Also Published As

Publication number Publication date
TW201310696A (zh) 2013-03-01
JP2013055319A (ja) 2013-03-21
KR20130024411A (ko) 2013-03-08
US20120138957A1 (en) 2012-06-07
JP6005372B2 (ja) 2016-10-12
EP2565940A3 (en) 2015-02-11
US8729576B2 (en) 2014-05-20
KR101883840B1 (ko) 2018-08-01
EP2565940A2 (en) 2013-03-06
TWI539623B (zh) 2016-06-21
EP2565940B1 (en) 2016-07-06

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Application publication date: 20130313

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