KR101862165B1 - 마스크 블랭크, 및 전사용 마스크의 제조방법 - Google Patents
마스크 블랭크, 및 전사용 마스크의 제조방법 Download PDFInfo
- Publication number
- KR101862165B1 KR101862165B1 KR1020147023809A KR20147023809A KR101862165B1 KR 101862165 B1 KR101862165 B1 KR 101862165B1 KR 1020147023809 A KR1020147023809 A KR 1020147023809A KR 20147023809 A KR20147023809 A KR 20147023809A KR 101862165 B1 KR101862165 B1 KR 101862165B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- mask blank
- mask
- etching
- tantalum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000013518 transcription Methods 0.000 title 1
- 230000035897 transcription Effects 0.000 title 1
- 239000010409 thin film Substances 0.000 claims abstract description 117
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 78
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 78
- 150000002500 ions Chemical class 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 claims abstract description 32
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- 238000005259 measurement Methods 0.000 claims abstract description 23
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910001425 magnesium ion Inorganic materials 0.000 claims abstract description 19
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- -1 aluminum ions Chemical class 0.000 claims abstract description 18
- 229910001424 calcium ion Inorganic materials 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 13
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000001133 acceleration Effects 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 7
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 6
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 6
- 239000010955 niobium Substances 0.000 claims abstract description 6
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 6
- 239000010936 titanium Substances 0.000 claims abstract description 6
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 6
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 6
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010937 tungsten Substances 0.000 claims abstract description 5
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims abstract 2
- 238000005530 etching Methods 0.000 claims description 99
- 239000010410 layer Substances 0.000 claims description 79
- 239000010408 film Substances 0.000 claims description 74
- 239000000463 material Substances 0.000 claims description 71
- 238000012546 transfer Methods 0.000 claims description 68
- 239000007789 gas Substances 0.000 claims description 63
- 238000001312 dry etching Methods 0.000 claims description 46
- 239000000460 chlorine Substances 0.000 claims description 45
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 36
- 239000001301 oxygen Substances 0.000 claims description 36
- 229910052760 oxygen Inorganic materials 0.000 claims description 36
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 35
- 229910052801 chlorine Inorganic materials 0.000 claims description 35
- 239000011737 fluorine Substances 0.000 claims description 26
- 229910052731 fluorine Inorganic materials 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 23
- 239000011521 glass Substances 0.000 claims description 9
- 239000002344 surface layer Substances 0.000 claims description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 230000007547 defect Effects 0.000 description 56
- 238000004140 cleaning Methods 0.000 description 50
- 239000000126 substance Substances 0.000 description 49
- 230000002401 inhibitory effect Effects 0.000 description 45
- 239000011575 calcium Substances 0.000 description 31
- 239000007788 liquid Substances 0.000 description 30
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 25
- 229910052791 calcium Inorganic materials 0.000 description 25
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 24
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 24
- 239000011651 chromium Substances 0.000 description 23
- 229910052804 chromium Inorganic materials 0.000 description 22
- 238000007689 inspection Methods 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 239000011777 magnesium Substances 0.000 description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 239000004094 surface-active agent Substances 0.000 description 8
- 238000009835 boiling Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004381 surface treatment Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000003112 inhibitor Substances 0.000 description 4
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 4
- 239000000347 magnesium hydroxide Substances 0.000 description 4
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000008033 biological extinction Effects 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 3
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical class [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 3
- 229910001634 calcium fluoride Inorganic materials 0.000 description 3
- 239000000920 calcium hydroxide Substances 0.000 description 3
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 3
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910019887 RuMo Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910004535 TaBN Inorganic materials 0.000 description 1
- 229910003071 TaON Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229940043430 calcium compound Drugs 0.000 description 1
- 150000001674 calcium compounds Chemical class 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910001437 manganese ion Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2012-057489 | 2012-03-14 | ||
| JP2012057489 | 2012-03-14 | ||
| PCT/JP2013/052801 WO2013136881A1 (ja) | 2012-03-14 | 2013-02-07 | マスクブランク、及び転写用マスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20140141578A KR20140141578A (ko) | 2014-12-10 |
| KR101862165B1 true KR101862165B1 (ko) | 2018-05-29 |
Family
ID=49160800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020147023809A Active KR101862165B1 (ko) | 2012-03-14 | 2013-02-07 | 마스크 블랭크, 및 전사용 마스크의 제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20150079502A1 (enExample) |
| JP (1) | JP6043204B2 (enExample) |
| KR (1) | KR101862165B1 (enExample) |
| TW (1) | TWI594068B (enExample) |
| WO (1) | WO2013136881A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101862166B1 (ko) * | 2012-03-14 | 2018-05-29 | 호야 가부시키가이샤 | 마스크 블랭크, 및 전사용 마스크의 제조방법 |
| US10410855B2 (en) * | 2015-03-19 | 2019-09-10 | Sharp Kabushiki Kaisha | Cleaning method, method for manufacturing semiconductor device, and plasma treatment device |
| JP6301383B2 (ja) * | 2015-03-27 | 2018-03-28 | Hoya株式会社 | フォトマスクブランク及びこれを用いたフォトマスクの製造方法、並びに表示装置の製造方法 |
| KR102313892B1 (ko) | 2016-03-29 | 2021-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| WO2018074512A1 (ja) * | 2016-10-21 | 2018-04-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| JP6900872B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| JP6900873B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| US11454876B2 (en) * | 2020-12-14 | 2022-09-27 | Applied Materials, Inc. | EUV mask blank absorber defect reduction |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100913557B1 (ko) | 2002-01-28 | 2009-08-21 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 디바이스용 기판의 세정액 및 세정방법 |
| JP2010206156A (ja) | 2009-02-04 | 2010-09-16 | Hoya Corp | 反射型マスクブランク及び反射型マスクの製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604292A (en) * | 1985-04-26 | 1986-08-05 | Spire Corporation | X-ray mask blank process |
| JP2658966B2 (ja) * | 1995-04-20 | 1997-09-30 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| JP2003179034A (ja) * | 2001-12-12 | 2003-06-27 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| US20070093406A1 (en) * | 2005-10-24 | 2007-04-26 | Omoregie Henryson | Novel cleaning process for masks and mask blanks |
| EP2056333B1 (de) * | 2007-10-29 | 2016-08-24 | ION-TOF Technologies GmbH | Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen |
| US20100294306A1 (en) * | 2007-12-04 | 2010-11-25 | Mitsubishi Chemical Corporation | Method and solution for cleaning semiconductor device substrate |
| EP2453464A1 (en) * | 2009-07-08 | 2012-05-16 | Asahi Glass Company, Limited | Euv-lithography reflection-type mask blank |
| JP4797114B2 (ja) * | 2009-10-12 | 2011-10-19 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP4739461B2 (ja) * | 2009-10-12 | 2011-08-03 | Ｈｏｙａ株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP2011204712A (ja) * | 2010-03-24 | 2011-10-13 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| US8524421B2 (en) * | 2010-03-30 | 2013-09-03 | Hoya Corporation | Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device |
| US8435704B2 (en) * | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
| JP4688966B2 (ja) * | 2010-07-06 | 2011-05-25 | Ｈｏｙａ株式会社 | マスクブランクスの製造方法及び転写マスクの製造方法 |
| KR101913431B1 (ko) * | 2011-04-06 | 2018-10-30 | 호야 가부시키가이샤 | 마스크 블랭크의 표면 처리 방법, 및 마스크 블랭크의 제조 방법과 마스크의 제조 방법 |
| JP5925543B2 (ja) * | 2011-04-06 | 2016-05-25 | Hoya株式会社 | マスクブランクの表面処理方法、マスクブランクの製造方法、およびマスクの製造方法 |
| JP5939662B2 (ja) * | 2011-09-21 | 2016-06-22 | Hoya株式会社 | マスクブランクの製造方法 |
| KR101862166B1 (ko) * | 2012-03-14 | 2018-05-29 | 호야 가부시키가이샤 | 마스크 블랭크, 및 전사용 마스크의 제조방법 |
-
2013
- 2013-02-02 US US14/384,953 patent/US20150079502A1/en not_active Abandoned
- 2013-02-07 WO PCT/JP2013/052801 patent/WO2013136881A1/ja not_active Ceased
- 2013-02-07 KR KR1020147023809A patent/KR101862165B1/ko active Active
- 2013-02-19 JP JP2013029740A patent/JP6043204B2/ja active Active
- 2013-02-21 TW TW102105935A patent/TWI594068B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100913557B1 (ko) | 2002-01-28 | 2009-08-21 | 미쓰비시 가가꾸 가부시키가이샤 | 반도체 디바이스용 기판의 세정액 및 세정방법 |
| JP2010206156A (ja) | 2009-02-04 | 2010-09-16 | Hoya Corp | 反射型マスクブランク及び反射型マスクの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI594068B (zh) | 2017-08-01 |
| TW201348853A (zh) | 2013-12-01 |
| US20150079502A1 (en) | 2015-03-19 |
| KR20140141578A (ko) | 2014-12-10 |
| JP6043204B2 (ja) | 2016-12-14 |
| WO2013136881A1 (ja) | 2013-09-19 |
| JP2013218301A (ja) | 2013-10-24 |
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