JP6043204B2 - マスクブランク、及び転写用マスクの製造方法 - Google Patents
マスクブランク、及び転写用マスクの製造方法 Download PDFInfo
- Publication number
- JP6043204B2 JP6043204B2 JP2013029740A JP2013029740A JP6043204B2 JP 6043204 B2 JP6043204 B2 JP 6043204B2 JP 2013029740 A JP2013029740 A JP 2013029740A JP 2013029740 A JP2013029740 A JP 2013029740A JP 6043204 B2 JP6043204 B2 JP 6043204B2
- Authority
- JP
- Japan
- Prior art keywords
- mask blank
- thin film
- mask
- etching
- ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013029740A JP6043204B2 (ja) | 2012-03-14 | 2013-02-19 | マスクブランク、及び転写用マスクの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012057489 | 2012-03-14 | ||
| JP2012057489 | 2012-03-14 | ||
| JP2013029740A JP6043204B2 (ja) | 2012-03-14 | 2013-02-19 | マスクブランク、及び転写用マスクの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013218301A JP2013218301A (ja) | 2013-10-24 |
| JP2013218301A5 JP2013218301A5 (enExample) | 2015-08-20 |
| JP6043204B2 true JP6043204B2 (ja) | 2016-12-14 |
Family
ID=49160800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013029740A Active JP6043204B2 (ja) | 2012-03-14 | 2013-02-19 | マスクブランク、及び転写用マスクの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20150079502A1 (enExample) |
| JP (1) | JP6043204B2 (enExample) |
| KR (1) | KR101862165B1 (enExample) |
| TW (1) | TWI594068B (enExample) |
| WO (1) | WO2013136881A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101862166B1 (ko) * | 2012-03-14 | 2018-05-29 | 호야 가부시키가이샤 | 마스크 블랭크, 및 전사용 마스크의 제조방법 |
| US10410855B2 (en) * | 2015-03-19 | 2019-09-10 | Sharp Kabushiki Kaisha | Cleaning method, method for manufacturing semiconductor device, and plasma treatment device |
| JP6301383B2 (ja) * | 2015-03-27 | 2018-03-28 | Hoya株式会社 | フォトマスクブランク及びこれを用いたフォトマスクの製造方法、並びに表示装置の製造方法 |
| KR102313892B1 (ko) | 2016-03-29 | 2021-10-15 | 호야 가부시키가이샤 | 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법 |
| WO2018074512A1 (ja) * | 2016-10-21 | 2018-04-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| JP6900872B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| JP6900873B2 (ja) * | 2016-12-26 | 2021-07-07 | 信越化学工業株式会社 | フォトマスクブランク及びその製造方法 |
| US11454876B2 (en) * | 2020-12-14 | 2022-09-27 | Applied Materials, Inc. | EUV mask blank absorber defect reduction |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4604292A (en) * | 1985-04-26 | 1986-08-05 | Spire Corporation | X-ray mask blank process |
| JP2658966B2 (ja) * | 1995-04-20 | 1997-09-30 | 日本電気株式会社 | フォトマスク及びその製造方法 |
| JP2003179034A (ja) * | 2001-12-12 | 2003-06-27 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
| WO2003065433A1 (fr) * | 2002-01-28 | 2003-08-07 | Mitsubishi Chemical Corporation | Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage |
| US20070093406A1 (en) * | 2005-10-24 | 2007-04-26 | Omoregie Henryson | Novel cleaning process for masks and mask blanks |
| EP2056333B1 (de) * | 2007-10-29 | 2016-08-24 | ION-TOF Technologies GmbH | Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen |
| US20100294306A1 (en) * | 2007-12-04 | 2010-11-25 | Mitsubishi Chemical Corporation | Method and solution for cleaning semiconductor device substrate |
| JP5638769B2 (ja) * | 2009-02-04 | 2014-12-10 | Hoya株式会社 | 反射型マスクブランクの製造方法及び反射型マスクの製造方法 |
| EP2453464A1 (en) * | 2009-07-08 | 2012-05-16 | Asahi Glass Company, Limited | Euv-lithography reflection-type mask blank |
| JP4797114B2 (ja) * | 2009-10-12 | 2011-10-19 | Hoya株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP4739461B2 (ja) * | 2009-10-12 | 2011-08-03 | Hoya株式会社 | 転写用マスクの製造方法及び半導体デバイスの製造方法 |
| JP2011204712A (ja) * | 2010-03-24 | 2011-10-13 | Dainippon Screen Mfg Co Ltd | 基板処理方法および基板処理装置 |
| US8524421B2 (en) * | 2010-03-30 | 2013-09-03 | Hoya Corporation | Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device |
| US8435704B2 (en) * | 2010-03-30 | 2013-05-07 | Hoya Corporation | Mask blank, transfer mask, and methods of manufacturing the same |
| JP4688966B2 (ja) * | 2010-07-06 | 2011-05-25 | Hoya株式会社 | マスクブランクスの製造方法及び転写マスクの製造方法 |
| KR101913431B1 (ko) * | 2011-04-06 | 2018-10-30 | 호야 가부시키가이샤 | 마스크 블랭크의 표면 처리 방법, 및 마스크 블랭크의 제조 방법과 마스크의 제조 방법 |
| JP5925543B2 (ja) * | 2011-04-06 | 2016-05-25 | Hoya株式会社 | マスクブランクの表面処理方法、マスクブランクの製造方法、およびマスクの製造方法 |
| JP5939662B2 (ja) * | 2011-09-21 | 2016-06-22 | Hoya株式会社 | マスクブランクの製造方法 |
| KR101862166B1 (ko) * | 2012-03-14 | 2018-05-29 | 호야 가부시키가이샤 | 마스크 블랭크, 및 전사용 마스크의 제조방법 |
-
2013
- 2013-02-02 US US14/384,953 patent/US20150079502A1/en not_active Abandoned
- 2013-02-07 WO PCT/JP2013/052801 patent/WO2013136881A1/ja not_active Ceased
- 2013-02-07 KR KR1020147023809A patent/KR101862165B1/ko active Active
- 2013-02-19 JP JP2013029740A patent/JP6043204B2/ja active Active
- 2013-02-21 TW TW102105935A patent/TWI594068B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TWI594068B (zh) | 2017-08-01 |
| TW201348853A (zh) | 2013-12-01 |
| US20150079502A1 (en) | 2015-03-19 |
| KR20140141578A (ko) | 2014-12-10 |
| KR101862165B1 (ko) | 2018-05-29 |
| WO2013136881A1 (ja) | 2013-09-19 |
| JP2013218301A (ja) | 2013-10-24 |
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