JP6043204B2 - マスクブランク、及び転写用マスクの製造方法 - Google Patents

マスクブランク、及び転写用マスクの製造方法 Download PDF

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Publication number
JP6043204B2
JP6043204B2 JP2013029740A JP2013029740A JP6043204B2 JP 6043204 B2 JP6043204 B2 JP 6043204B2 JP 2013029740 A JP2013029740 A JP 2013029740A JP 2013029740 A JP2013029740 A JP 2013029740A JP 6043204 B2 JP6043204 B2 JP 6043204B2
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Japan
Prior art keywords
mask blank
thin film
mask
etching
ions
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Japanese (ja)
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JP2013218301A5 (enExample
JP2013218301A (ja
Inventor
鈴木 寿幸
寿幸 鈴木
山田 剛之
剛之 山田
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Hoya Corp
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Hoya Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
JP2013029740A 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法 Active JP6043204B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013029740A JP6043204B2 (ja) 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012057489 2012-03-14
JP2012057489 2012-03-14
JP2013029740A JP6043204B2 (ja) 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法

Publications (3)

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JP2013218301A JP2013218301A (ja) 2013-10-24
JP2013218301A5 JP2013218301A5 (enExample) 2015-08-20
JP6043204B2 true JP6043204B2 (ja) 2016-12-14

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JP2013029740A Active JP6043204B2 (ja) 2012-03-14 2013-02-19 マスクブランク、及び転写用マスクの製造方法

Country Status (5)

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US (1) US20150079502A1 (enExample)
JP (1) JP6043204B2 (enExample)
KR (1) KR101862165B1 (enExample)
TW (1) TWI594068B (enExample)
WO (1) WO2013136881A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101862166B1 (ko) * 2012-03-14 2018-05-29 호야 가부시키가이샤 마스크 블랭크, 및 전사용 마스크의 제조방법
US10410855B2 (en) * 2015-03-19 2019-09-10 Sharp Kabushiki Kaisha Cleaning method, method for manufacturing semiconductor device, and plasma treatment device
JP6301383B2 (ja) * 2015-03-27 2018-03-28 Hoya株式会社 フォトマスクブランク及びこれを用いたフォトマスクの製造方法、並びに表示装置の製造方法
KR102313892B1 (ko) 2016-03-29 2021-10-15 호야 가부시키가이샤 마스크 블랭크, 마스크 블랭크의 제조 방법, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
WO2018074512A1 (ja) * 2016-10-21 2018-04-26 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
JP6900872B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
JP6900873B2 (ja) * 2016-12-26 2021-07-07 信越化学工業株式会社 フォトマスクブランク及びその製造方法
US11454876B2 (en) * 2020-12-14 2022-09-27 Applied Materials, Inc. EUV mask blank absorber defect reduction

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604292A (en) * 1985-04-26 1986-08-05 Spire Corporation X-ray mask blank process
JP2658966B2 (ja) * 1995-04-20 1997-09-30 日本電気株式会社 フォトマスク及びその製造方法
JP2003179034A (ja) * 2001-12-12 2003-06-27 Hitachi Ltd 半導体集積回路装置の製造方法
WO2003065433A1 (fr) * 2002-01-28 2003-08-07 Mitsubishi Chemical Corporation Detergent liquide pour substrat de dispositif semi-conducteur et procede de nettoyage
US20070093406A1 (en) * 2005-10-24 2007-04-26 Omoregie Henryson Novel cleaning process for masks and mask blanks
EP2056333B1 (de) * 2007-10-29 2016-08-24 ION-TOF Technologies GmbH Flüssigmetallionenquelle, Sekundärionenmassenspektrometer, sekundärionenmassenspektrometisches Analyseverfahren sowie deren Verwendungen
US20100294306A1 (en) * 2007-12-04 2010-11-25 Mitsubishi Chemical Corporation Method and solution for cleaning semiconductor device substrate
JP5638769B2 (ja) * 2009-02-04 2014-12-10 Hoya株式会社 反射型マスクブランクの製造方法及び反射型マスクの製造方法
EP2453464A1 (en) * 2009-07-08 2012-05-16 Asahi Glass Company, Limited Euv-lithography reflection-type mask blank
JP4797114B2 (ja) * 2009-10-12 2011-10-19 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP4739461B2 (ja) * 2009-10-12 2011-08-03 Hoya株式会社 転写用マスクの製造方法及び半導体デバイスの製造方法
JP2011204712A (ja) * 2010-03-24 2011-10-13 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
US8524421B2 (en) * 2010-03-30 2013-09-03 Hoya Corporation Mask blank, transfer mask, methods of manufacturing the same and method of manufacturing a semiconductor device
US8435704B2 (en) * 2010-03-30 2013-05-07 Hoya Corporation Mask blank, transfer mask, and methods of manufacturing the same
JP4688966B2 (ja) * 2010-07-06 2011-05-25 Hoya株式会社 マスクブランクスの製造方法及び転写マスクの製造方法
KR101913431B1 (ko) * 2011-04-06 2018-10-30 호야 가부시키가이샤 마스크 블랭크의 표면 처리 방법, 및 마스크 블랭크의 제조 방법과 마스크의 제조 방법
JP5925543B2 (ja) * 2011-04-06 2016-05-25 Hoya株式会社 マスクブランクの表面処理方法、マスクブランクの製造方法、およびマスクの製造方法
JP5939662B2 (ja) * 2011-09-21 2016-06-22 Hoya株式会社 マスクブランクの製造方法
KR101862166B1 (ko) * 2012-03-14 2018-05-29 호야 가부시키가이샤 마스크 블랭크, 및 전사용 마스크의 제조방법

Also Published As

Publication number Publication date
TWI594068B (zh) 2017-08-01
TW201348853A (zh) 2013-12-01
US20150079502A1 (en) 2015-03-19
KR20140141578A (ko) 2014-12-10
KR101862165B1 (ko) 2018-05-29
WO2013136881A1 (ja) 2013-09-19
JP2013218301A (ja) 2013-10-24

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