KR101852460B1 - 중합체, 유기막 조성물, 및 패턴형성방법 - Google Patents

중합체, 유기막 조성물, 및 패턴형성방법 Download PDF

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KR101852460B1
KR101852460B1 KR1020150180372A KR20150180372A KR101852460B1 KR 101852460 B1 KR101852460 B1 KR 101852460B1 KR 1020150180372 A KR1020150180372 A KR 1020150180372A KR 20150180372 A KR20150180372 A KR 20150180372A KR 101852460 B1 KR101852460 B1 KR 101852460B1
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South Korea
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group
substituted
independently
unsubstituted
hydrogen
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KR1020150180372A
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Korean (ko)
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KR20170072035A (ko
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남연희
김성환
김민수
박유정
정슬기
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삼성에스디아이 주식회사
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Priority to KR1020150180372A priority Critical patent/KR101852460B1/ko
Priority to US15/355,088 priority patent/US10353292B2/en
Priority to CN201611079474.5A priority patent/CN106883380B/zh
Priority to TW105140310A priority patent/TWI609030B/zh
Priority to JP2016244691A priority patent/JP6969868B2/ja
Publication of KR20170072035A publication Critical patent/KR20170072035A/ko
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    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
    • C08G2261/344—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing heteroatoms
    • C—CHEMISTRY; METALLURGY
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    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/50—Physical properties
    • C08G2261/59—Stability
    • C08G2261/592—Stability against heat
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    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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    • C08L2201/00—Properties
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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TW105140310A TWI609030B (zh) 2015-12-16 2016-12-07 聚合物、有機層組成物及形成圖案的方法
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