KR101846588B1 - 포토레지스트막, 및 연마 식각 및 절삭 방법 - Google Patents

포토레지스트막, 및 연마 식각 및 절삭 방법 Download PDF

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Publication number
KR101846588B1
KR101846588B1 KR1020127029459A KR20127029459A KR101846588B1 KR 101846588 B1 KR101846588 B1 KR 101846588B1 KR 1020127029459 A KR1020127029459 A KR 1020127029459A KR 20127029459 A KR20127029459 A KR 20127029459A KR 101846588 B1 KR101846588 B1 KR 101846588B1
Authority
KR
South Korea
Prior art keywords
photoresist
substrate
film
less
photoresist film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127029459A
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English (en)
Korean (ko)
Other versions
KR20130103316A (ko
Inventor
다니엘 비. 매노
빈센트 이. 리베리
Original Assignee
아이코닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아이코닉스 코포레이션 filed Critical 아이코닉스 코포레이션
Publication of KR20130103316A publication Critical patent/KR20130103316A/ko
Application granted granted Critical
Publication of KR101846588B1 publication Critical patent/KR101846588B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/04—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods for treating only selected parts of a surface, e.g. for carving stone or glass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
KR1020127029459A 2010-04-12 2011-04-12 포토레지스트막, 및 연마 식각 및 절삭 방법 Expired - Fee Related KR101846588B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US32319210P 2010-04-12 2010-04-12
US61/323,192 2010-04-12
PCT/US2011/032154 WO2011130300A1 (en) 2010-04-12 2011-04-12 Photoresist film and methods for abrasive etching and cutting

Publications (2)

Publication Number Publication Date
KR20130103316A KR20130103316A (ko) 2013-09-23
KR101846588B1 true KR101846588B1 (ko) 2018-04-06

Family

ID=44224319

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127029459A Expired - Fee Related KR101846588B1 (ko) 2010-04-12 2011-04-12 포토레지스트막, 및 연마 식각 및 절삭 방법

Country Status (5)

Country Link
EP (1) EP2558908B1 (enExample)
JP (1) JP5871904B2 (enExample)
KR (1) KR101846588B1 (enExample)
SG (1) SG184460A1 (enExample)
WO (1) WO2011130300A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103688343B (zh) 2011-03-07 2016-09-07 恩特格里公司 化学机械抛光垫修整器
CN106463379B (zh) 2014-03-21 2019-08-06 恩特格里斯公司 具有细长切割边缘的化学机械平坦化垫调节器
US11342256B2 (en) 2019-01-24 2022-05-24 Applied Materials, Inc. Method of fine redistribution interconnect formation for advanced packaging applications
IT201900006736A1 (it) 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di fabbricazione di package
IT201900006740A1 (it) * 2019-05-10 2020-11-10 Applied Materials Inc Procedimenti di strutturazione di substrati
US11931855B2 (en) 2019-06-17 2024-03-19 Applied Materials, Inc. Planarization methods for packaging substrates
US11862546B2 (en) 2019-11-27 2024-01-02 Applied Materials, Inc. Package core assembly and fabrication methods
US11257790B2 (en) 2020-03-10 2022-02-22 Applied Materials, Inc. High connectivity device stacking
US11454884B2 (en) 2020-04-15 2022-09-27 Applied Materials, Inc. Fluoropolymer stamp fabrication method
US11400545B2 (en) 2020-05-11 2022-08-02 Applied Materials, Inc. Laser ablation for package fabrication
US11232951B1 (en) 2020-07-14 2022-01-25 Applied Materials, Inc. Method and apparatus for laser drilling blind vias
US11676832B2 (en) 2020-07-24 2023-06-13 Applied Materials, Inc. Laser ablation system for package fabrication
US11521937B2 (en) 2020-11-16 2022-12-06 Applied Materials, Inc. Package structures with built-in EMI shielding
US11404318B2 (en) 2020-11-20 2022-08-02 Applied Materials, Inc. Methods of forming through-silicon vias in substrates for advanced packaging
US11705365B2 (en) 2021-05-18 2023-07-18 Applied Materials, Inc. Methods of micro-via formation for advanced packaging
US12183684B2 (en) 2021-10-26 2024-12-31 Applied Materials, Inc. Semiconductor device packaging methods

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2510511B2 (ja) * 1986-04-24 1996-06-26 工業技術院長 スクリ−ン印刷版用感光性樹脂組成物
JP2631495B2 (ja) * 1988-03-10 1997-07-16 工業技術院長 スクリーン印刷版の製造法
DE69033623T2 (de) * 1990-10-22 2001-05-23 Aicello Chemical Co. Ltd., Toyohashi Gravierverfahren mit bildmaske und lichtempfindlicher laminatfilm für besagte bildmaske
US5989689A (en) * 1991-12-11 1999-11-23 The Chromaline Corporation Sandblast mask laminate with blastable pressure sensitive adhesive
US5415971A (en) * 1993-04-02 1995-05-16 The Chromaline Corporation Photoresist laminate including photoimageable adhesive layer
US6140006A (en) * 1998-06-15 2000-10-31 The Chromaline Corporation Integral membrane layer formed from a photosensitive layer in an imageable photoresist laminate

Also Published As

Publication number Publication date
SG184460A1 (en) 2012-11-29
KR20130103316A (ko) 2013-09-23
JP5871904B2 (ja) 2016-03-01
EP2558908A1 (en) 2013-02-20
WO2011130300A1 (en) 2011-10-20
EP2558908B1 (en) 2015-06-03
JP2013523477A (ja) 2013-06-17

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