KR101837247B1 - 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법 - Google Patents

포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법 Download PDF

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Publication number
KR101837247B1
KR101837247B1 KR1020150098602A KR20150098602A KR101837247B1 KR 101837247 B1 KR101837247 B1 KR 101837247B1 KR 1020150098602 A KR1020150098602 A KR 1020150098602A KR 20150098602 A KR20150098602 A KR 20150098602A KR 101837247 B1 KR101837247 B1 KR 101837247B1
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KR
South Korea
Prior art keywords
pattern
film
light
photomask
transmittance
Prior art date
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KR1020150098602A
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English (en)
Korean (ko)
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KR20160010322A (ko
Inventor
노부히사 이마시끼
유따까 요시까와
히로유끼 스가와라
Original Assignee
호야 가부시키가이샤
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Application filed by 호야 가부시키가이샤 filed Critical 호야 가부시키가이샤
Publication of KR20160010322A publication Critical patent/KR20160010322A/ko
Application granted granted Critical
Publication of KR101837247B1 publication Critical patent/KR101837247B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/56—Organic absorbers, e.g. of photo-resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020150098602A 2014-07-17 2015-07-10 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법 KR101837247B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-146847 2014-07-17
JP2014146847A JP6581759B2 (ja) 2014-07-17 2014-07-17 フォトマスク、フォトマスクの製造方法、フォトマスクブランク及び表示装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020170129263A Division KR102168149B1 (ko) 2014-07-17 2017-10-11 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20160010322A KR20160010322A (ko) 2016-01-27
KR101837247B1 true KR101837247B1 (ko) 2018-03-09

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020150098602A KR101837247B1 (ko) 2014-07-17 2015-07-10 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법
KR1020170129263A KR102168149B1 (ko) 2014-07-17 2017-10-11 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법
KR1020200132749A KR102195658B1 (ko) 2014-07-17 2020-10-14 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법

Family Applications After (2)

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KR1020170129263A KR102168149B1 (ko) 2014-07-17 2017-10-11 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법
KR1020200132749A KR102195658B1 (ko) 2014-07-17 2020-10-14 포토마스크, 포토마스크의 제조 방법, 포토마스크 블랭크 및 표시 장치의 제조 방법

Country Status (4)

Country Link
JP (1) JP6581759B2 (zh)
KR (3) KR101837247B1 (zh)
CN (2) CN105319831B (zh)
TW (3) TWI651585B (zh)

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* Cited by examiner, † Cited by third party
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JP6259509B1 (ja) * 2016-12-28 2018-01-10 株式会社エスケーエレクトロニクス ハーフトーンマスク、フォトマスクブランクス及びハーフトーンマスクの製造方法
JP6808665B2 (ja) * 2017-03-10 2021-01-06 Hoya株式会社 表示装置製造用フォトマスク、及び表示装置の製造方法
JP7080070B2 (ja) * 2017-03-24 2022-06-03 Hoya株式会社 フォトマスク、及び表示装置の製造方法
JP6964029B2 (ja) * 2017-06-06 2021-11-10 Hoya株式会社 フォトマスク、及び、表示装置の製造方法
TWI659262B (zh) * 2017-08-07 2019-05-11 日商Ｈｏｙａ股份有限公司 光罩之修正方法、光罩之製造方法、光罩及顯示裝置之製造方法
TWI742885B (zh) * 2017-09-12 2021-10-11 日商Ｈｏｙａ股份有限公司 光罩及顯示裝置之製造方法
JP7383490B2 (ja) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス フォトマスク

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JPH0315845A (ja) 1989-06-14 1991-01-24 Hitachi Ltd マスク及びマスク作製方法
JP3225535B2 (ja) * 1991-04-26 2001-11-05 ソニー株式会社 位相シフトマスク
JPH0683031A (ja) * 1992-08-31 1994-03-25 Sony Corp 露光マスク形成方法
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JPH0764274A (ja) * 1993-08-30 1995-03-10 Sony Corp 位相シフトマスク及びその製造方法
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JP2002323746A (ja) * 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd 位相シフトマスク及び、それを用いたホールパターン形成方法
US7147975B2 (en) * 2003-02-17 2006-12-12 Matsushita Electric Industrial Co., Ltd. Photomask
JP3746497B2 (ja) * 2003-06-24 2006-02-15 松下電器産業株式会社 フォトマスク
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JP2005150494A (ja) * 2003-11-18 2005-06-09 Sony Corp 半導体装置の製造方法
JP4645076B2 (ja) * 2004-06-28 2011-03-09 凸版印刷株式会社 位相シフトマスクおよびその製造方法およびパターン転写方法
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JP3971774B2 (ja) * 2005-10-17 2007-09-05 松下電器産業株式会社 パターン形成方法
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JP5611581B2 (ja) * 2009-12-21 2014-10-22 Hoya株式会社 マスクブランク及びその製造方法、並びに、転写マスク及びその製造方法
CN108267927B (zh) 2011-12-21 2021-08-24 大日本印刷株式会社 大型相移掩膜
JP6139826B2 (ja) * 2012-05-02 2017-05-31 Hoya株式会社 フォトマスク、パターン転写方法、及びフラットパネルディスプレイの製造方法
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JP5916680B2 (ja) * 2012-10-25 2016-05-11 Hoya株式会社 表示装置製造用フォトマスク、及びパターン転写方法
JP6322250B2 (ja) * 2016-10-05 2018-05-09 Hoya株式会社 フォトマスクブランク

Also Published As

Publication number Publication date
JP6581759B2 (ja) 2019-09-25
CN110673436B (zh) 2023-10-27
CN105319831A (zh) 2016-02-10
KR102195658B1 (ko) 2020-12-28
TW201921091A (zh) 2019-06-01
CN110673436A (zh) 2020-01-10
CN105319831B (zh) 2019-11-12
KR102168149B1 (ko) 2020-10-20
TWI621907B (zh) 2018-04-21
TWI651585B (zh) 2019-02-21
TW201604643A (zh) 2016-02-01
KR20170117987A (ko) 2017-10-24
TWI690770B (zh) 2020-04-11
KR20200120599A (ko) 2020-10-21
KR20160010322A (ko) 2016-01-27
TW201816503A (zh) 2018-05-01
JP2016024264A (ja) 2016-02-08

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