KR101833094B1 - 블랭킹 장치, 묘화 장치 및 물품의 제조 방법 - Google Patents

블랭킹 장치, 묘화 장치 및 물품의 제조 방법 Download PDF

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Publication number
KR101833094B1
KR101833094B1 KR1020140074110A KR20140074110A KR101833094B1 KR 101833094 B1 KR101833094 B1 KR 101833094B1 KR 1020140074110 A KR1020140074110 A KR 1020140074110A KR 20140074110 A KR20140074110 A KR 20140074110A KR 101833094 B1 KR101833094 B1 KR 101833094B1
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South Korea
Prior art keywords
beams
blankers
charged particle
drive
combination
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KR1020140074110A
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English (en)
Korean (ko)
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KR20150001631A (ko
Inventor
도모유키 모리타
마사토 무라키
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캐논 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
KR1020140074110A 2013-06-26 2014-06-18 블랭킹 장치, 묘화 장치 및 물품의 제조 방법 Active KR101833094B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013134212A JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法
JPJP-P-2013-134212 2013-06-26

Publications (2)

Publication Number Publication Date
KR20150001631A KR20150001631A (ko) 2015-01-06
KR101833094B1 true KR101833094B1 (ko) 2018-02-27

Family

ID=52114667

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KR1020140074110A Active KR101833094B1 (ko) 2013-06-26 2014-06-18 블랭킹 장치, 묘화 장치 및 물품의 제조 방법

Country Status (5)

Country Link
US (1) US9040935B2 (enExample)
JP (1) JP6212299B2 (enExample)
KR (1) KR101833094B1 (enExample)
CN (1) CN104253025B (enExample)
TW (1) TWI552196B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
JP2015070213A (ja) * 2013-09-30 2015-04-13 キヤノン株式会社 描画装置、および物品の製造方法
KR102358009B1 (ko) 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6804389B2 (ja) * 2017-05-30 2020-12-23 株式会社ニューフレアテクノロジー 描画装置および描画方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119876A (ja) * 2002-09-27 2004-04-15 Advantest Corp 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
JP2010041055A (ja) 2008-08-07 2010-02-18 Ims Nanofabrication Ag 照射の不均等性および画像歪みの補償
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101077098B1 (ko) * 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7816655B1 (en) 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
JP2007019243A (ja) * 2005-07-07 2007-01-25 Canon Inc 電子ビーム装置及びデバイス製造方法
US8253923B1 (en) * 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
TW201239943A (en) * 2011-03-25 2012-10-01 Canon Kk Drawing apparatus and method of manufacturing article
JP5832141B2 (ja) * 2011-05-16 2015-12-16 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013016744A (ja) * 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP2013074088A (ja) * 2011-09-28 2013-04-22 Canon Inc 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119876A (ja) * 2002-09-27 2004-04-15 Advantest Corp 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
JP2010041055A (ja) 2008-08-07 2010-02-18 Ims Nanofabrication Ag 照射の不均等性および画像歪みの補償
US20100038554A1 (en) * 2008-08-07 2010-02-18 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法

Also Published As

Publication number Publication date
TWI552196B (zh) 2016-10-01
US9040935B2 (en) 2015-05-26
TW201503231A (zh) 2015-01-16
JP6212299B2 (ja) 2017-10-11
US20150001417A1 (en) 2015-01-01
CN104253025A (zh) 2014-12-31
CN104253025B (zh) 2017-07-07
JP2015012036A (ja) 2015-01-19
KR20150001631A (ko) 2015-01-06

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