TWI552196B - 消隱裝置，繪圖裝置，及製造物品的方法 - Google Patents

消隱裝置，繪圖裝置，及製造物品的方法 Download PDF

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Publication number
TWI552196B
TWI552196B TW103119549A TW103119549A TWI552196B TW I552196 B TWI552196 B TW I552196B TW 103119549 A TW103119549 A TW 103119549A TW 103119549 A TW103119549 A TW 103119549A TW I552196 B TWI552196 B TW I552196B
Authority
TW
Taiwan
Prior art keywords
charged particle
beams
blankers
bit
substrate
Prior art date
Application number
TW103119549A
Other languages
English (en)
Chinese (zh)
Other versions
TW201503231A (zh
Inventor
森田知之
村木真人
Original Assignee
佳能股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 佳能股份有限公司 filed Critical 佳能股份有限公司
Publication of TW201503231A publication Critical patent/TW201503231A/zh
Application granted granted Critical
Publication of TWI552196B publication Critical patent/TWI552196B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
TW103119549A 2013-06-26 2014-06-05 消隱裝置，繪圖裝置，及製造物品的方法 TWI552196B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013134212A JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法

Publications (2)

Publication Number Publication Date
TW201503231A TW201503231A (zh) 2015-01-16
TWI552196B true TWI552196B (zh) 2016-10-01

Family

ID=52114667

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103119549A TWI552196B (zh) 2013-06-26 2014-06-05 消隱裝置，繪圖裝置，及製造物品的方法

Country Status (5)

Country Link
US (1) US9040935B2 (enExample)
JP (1) JP6212299B2 (enExample)
KR (1) KR101833094B1 (enExample)
CN (1) CN104253025B (enExample)
TW (1) TWI552196B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
JP2015070213A (ja) * 2013-09-30 2015-04-13 キヤノン株式会社 描画装置、および物品の製造方法
KR102358009B1 (ko) 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6804389B2 (ja) * 2017-05-30 2020-12-23 株式会社ニューフレアテクノロジー 描画装置および描画方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897458B2 (en) * 2002-10-30 2005-05-24 Mapper Lithography Ip B.V. Electron beam exposure system
US20100038554A1 (en) * 2008-08-07 2010-02-18 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion
TW201239943A (en) * 2011-03-25 2012-10-01 Canon Kk Drawing apparatus and method of manufacturing article
TW201248673A (en) * 2011-05-16 2012-12-01 Canon Kk Drawing apparatus and method of manufacturing article

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4220209B2 (ja) * 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7816655B1 (en) 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
JP2007019243A (ja) * 2005-07-07 2007-01-25 Canon Inc 電子ビーム装置及びデバイス製造方法
US8253923B1 (en) * 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
JP2013016744A (ja) * 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法
JP2013074088A (ja) * 2011-09-28 2013-04-22 Canon Inc 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6897458B2 (en) * 2002-10-30 2005-05-24 Mapper Lithography Ip B.V. Electron beam exposure system
US20100038554A1 (en) * 2008-08-07 2010-02-18 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion
TW201239943A (en) * 2011-03-25 2012-10-01 Canon Kk Drawing apparatus and method of manufacturing article
TW201248673A (en) * 2011-05-16 2012-12-01 Canon Kk Drawing apparatus and method of manufacturing article

Also Published As

Publication number Publication date
KR20150001631A (ko) 2015-01-06
JP6212299B2 (ja) 2017-10-11
US20150001417A1 (en) 2015-01-01
US9040935B2 (en) 2015-05-26
CN104253025B (zh) 2017-07-07
JP2015012036A (ja) 2015-01-19
CN104253025A (zh) 2014-12-31
KR101833094B1 (ko) 2018-02-27
TW201503231A (zh) 2015-01-16

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