TWI552196B - 消隱裝置，繪圖裝置，及製造物品的方法 - Google Patents
消隱裝置，繪圖裝置，及製造物品的方法 Download PDFInfo
- Publication number
- TWI552196B TWI552196B TW103119549A TW103119549A TWI552196B TW I552196 B TWI552196 B TW I552196B TW 103119549 A TW103119549 A TW 103119549A TW 103119549 A TW103119549 A TW 103119549A TW I552196 B TWI552196 B TW I552196B
- Authority
- TW
- Taiwan
- Prior art keywords
- charged particle
- beams
- blankers
- bit
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000000758 substrate Substances 0.000 claims description 75
- 238000012545 processing Methods 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 14
- 238000005286 illumination Methods 0.000 claims description 10
- 239000002245 particle Substances 0.000 description 189
- 238000012937 correction Methods 0.000 description 59
- 239000000463 material Substances 0.000 description 30
- 238000009877 rendering Methods 0.000 description 14
- 238000001514 detection method Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 210000001747 pupil Anatomy 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000002989 correction material Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3007—Electron or ion-optical systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013134212A JP6212299B2 (ja) | 2013-06-26 | 2013-06-26 | ブランキング装置、描画装置、および物品の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201503231A TW201503231A (zh) | 2015-01-16 |
| TWI552196B true TWI552196B (zh) | 2016-10-01 |
Family
ID=52114667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103119549A TWI552196B (zh) | 2013-06-26 | 2014-06-05 | 消隱裝置，繪圖裝置，及製造物品的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US9040935B2 (enExample) |
| JP (1) | JP6212299B2 (enExample) |
| KR (1) | KR101833094B1 (enExample) |
| CN (1) | CN104253025B (enExample) |
| TW (1) | TWI552196B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6289181B2 (ja) * | 2013-06-26 | 2018-03-07 | キヤノン株式会社 | 描画装置、及び、物品の製造方法 |
| JP2015070213A (ja) * | 2013-09-30 | 2015-04-13 | キヤノン株式会社 | 描画装置、および物品の製造方法 |
| KR102358009B1 (ko) | 2015-11-10 | 2022-02-04 | 삼성전자주식회사 | 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법 |
| JP6804389B2 (ja) * | 2017-05-30 | 2020-12-23 | 株式会社ニューフレアテクノロジー | 描画装置および描画方法 |
| JP6854215B2 (ja) * | 2017-08-02 | 2021-04-07 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897458B2 (en) * | 2002-10-30 | 2005-05-24 | Mapper Lithography Ip B.V. | Electron beam exposure system |
| US20100038554A1 (en) * | 2008-08-07 | 2010-02-18 | Ims Nanofabrication Ag | Compensation of dose inhomogeneity and image distortion |
| TW201239943A (en) * | 2011-03-25 | 2012-10-01 | Canon Kk | Drawing apparatus and method of manufacturing article |
| TW201248673A (en) * | 2011-05-16 | 2012-12-01 | Canon Kk | Drawing apparatus and method of manufacturing article |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4220209B2 (ja) * | 2002-09-27 | 2009-02-04 | 株式会社アドバンテスト | 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法 |
| GB2414111B (en) | 2004-04-30 | 2010-01-27 | Ims Nanofabrication Gmbh | Advanced pattern definition for particle-beam processing |
| US7816655B1 (en) | 2004-05-21 | 2010-10-19 | Kla-Tencor Technologies Corporation | Reflective electron patterning device and method of using same |
| JP2007019243A (ja) * | 2005-07-07 | 2007-01-25 | Canon Inc | 電子ビーム装置及びデバイス製造方法 |
| US8253923B1 (en) * | 2008-09-23 | 2012-08-28 | Pinebrook Imaging Technology, Ltd. | Optical imaging writer system |
| JP2013016744A (ja) * | 2011-07-06 | 2013-01-24 | Canon Inc | 描画装置及びデバイスの製造方法 |
| JP2013069813A (ja) * | 2011-09-21 | 2013-04-18 | Canon Inc | 描画装置、および、物品の製造方法 |
| JP2013074088A (ja) * | 2011-09-28 | 2013-04-22 | Canon Inc | 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法 |
-
2013
- 2013-06-26 JP JP2013134212A patent/JP6212299B2/ja active Active
-
2014
- 2014-06-05 TW TW103119549A patent/TWI552196B/zh active
- 2014-06-18 KR KR1020140074110A patent/KR101833094B1/ko active Active
- 2014-06-23 CN CN201410282732.4A patent/CN104253025B/zh active Active
- 2014-06-24 US US14/312,953 patent/US9040935B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6897458B2 (en) * | 2002-10-30 | 2005-05-24 | Mapper Lithography Ip B.V. | Electron beam exposure system |
| US20100038554A1 (en) * | 2008-08-07 | 2010-02-18 | Ims Nanofabrication Ag | Compensation of dose inhomogeneity and image distortion |
| TW201239943A (en) * | 2011-03-25 | 2012-10-01 | Canon Kk | Drawing apparatus and method of manufacturing article |
| TW201248673A (en) * | 2011-05-16 | 2012-12-01 | Canon Kk | Drawing apparatus and method of manufacturing article |
Also Published As
| Publication number | Publication date |
|---|---|
| US9040935B2 (en) | 2015-05-26 |
| TW201503231A (zh) | 2015-01-16 |
| JP6212299B2 (ja) | 2017-10-11 |
| KR101833094B1 (ko) | 2018-02-27 |
| US20150001417A1 (en) | 2015-01-01 |
| CN104253025A (zh) | 2014-12-31 |
| CN104253025B (zh) | 2017-07-07 |
| JP2015012036A (ja) | 2015-01-19 |
| KR20150001631A (ko) | 2015-01-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI492000B (zh) | Electron beam rendering device and electron beam rendering method | |
| TWI489222B (zh) | Electron beam rendering device and electron beam rendering method | |
| TWI552196B (zh) | 消隱裝置，繪圖裝置，及製造物品的方法 | |
| TWI572971B (zh) | 用於利用帶電粒子束在基板上執行繪畫的繪畫裝置和半導體裝置製造方法 | |
| TWI389161B (zh) | 微粒射束用之多射束調變器及多射束調變器在無遮罩式基板結構化上的應用 | |
| CN110794650B (zh) | 多带电粒子束描绘装置及多带电粒子束描绘方法 | |
| TWI603366B (zh) | Multiple charged particle beam tracing device and multiple charged particle beam tracing method | |
| TW201624524A (zh) | 多重帶電粒子束的射束位置測定方法及多重帶電粒子束描繪裝置 | |
| EP1943660B1 (en) | Charged particle beam exposure system | |
| JP2020072151A (ja) | マルチ荷電粒子ビーム描画装置およびマルチ荷電粒子ビーム描画方法 | |
| US11556061B2 (en) | Multiple charged particle beam writing apparatus and multiple charged particle beam writing method | |
| CN113341655A (zh) | 多带电粒子束描绘装置及多带电粒子束描绘方法 | |
| KR20140130029A (ko) | 묘화 장치 및 물품의 제조 방법 | |
| TWI516858B (zh) | 使用帶電粒子束在基板上實施繪圖的繪圖裝置及物件之製造方法 | |
| WO2021250965A1 (ja) | マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法 | |
| CN114637169A (zh) | 电子射束照射装置及电子射束照射方法 | |
| JP2015144269A (ja) | 描画装置、および物品の製造方法 | |
| JP2016171131A (ja) | ブランキング装置、リソグラフィ装置、および物品の製造方法 |