JP6212299B2 - ブランキング装置、描画装置、および物品の製造方法 - Google Patents

ブランキング装置、描画装置、および物品の製造方法 Download PDF

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Publication number
JP6212299B2
JP6212299B2 JP2013134212A JP2013134212A JP6212299B2 JP 6212299 B2 JP6212299 B2 JP 6212299B2 JP 2013134212 A JP2013134212 A JP 2013134212A JP 2013134212 A JP2013134212 A JP 2013134212A JP 6212299 B2 JP6212299 B2 JP 6212299B2
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JP
Japan
Prior art keywords
blankers
beams
charged particle
relationship
unit
Prior art date
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Active
Application number
JP2013134212A
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English (en)
Japanese (ja)
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JP2015012036A5 (enExample
JP2015012036A (ja
Inventor
森田　知之
知之 森田
村木　真人
真人 村木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2013134212A priority Critical patent/JP6212299B2/ja
Priority to TW103119549A priority patent/TWI552196B/zh
Priority to KR1020140074110A priority patent/KR101833094B1/ko
Priority to CN201410282732.4A priority patent/CN104253025B/zh
Priority to US14/312,953 priority patent/US9040935B2/en
Publication of JP2015012036A publication Critical patent/JP2015012036A/ja
Publication of JP2015012036A5 publication Critical patent/JP2015012036A5/ja
Application granted granted Critical
Publication of JP6212299B2 publication Critical patent/JP6212299B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
JP2013134212A 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法 Active JP6212299B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013134212A JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法
TW103119549A TWI552196B (zh) 2013-06-26 2014-06-05 消隱裝置，繪圖裝置，及製造物品的方法
KR1020140074110A KR101833094B1 (ko) 2013-06-26 2014-06-18 블랭킹 장치, 묘화 장치 및 물품의 제조 방법
CN201410282732.4A CN104253025B (zh) 2013-06-26 2014-06-23 消隐装置、绘制装置和物品的制造方法
US14/312,953 US9040935B2 (en) 2013-06-26 2014-06-24 Blanking apparatus, drawing apparatus, and method of manufacturing article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013134212A JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法

Publications (3)

Publication Number Publication Date
JP2015012036A JP2015012036A (ja) 2015-01-19
JP2015012036A5 JP2015012036A5 (enExample) 2016-07-21
JP6212299B2 true JP6212299B2 (ja) 2017-10-11

Family

ID=52114667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013134212A Active JP6212299B2 (ja) 2013-06-26 2013-06-26 ブランキング装置、描画装置、および物品の製造方法

Country Status (5)

Country Link
US (1) US9040935B2 (enExample)
JP (1) JP6212299B2 (enExample)
KR (1) KR101833094B1 (enExample)
CN (1) CN104253025B (enExample)
TW (1) TWI552196B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6289181B2 (ja) * 2013-06-26 2018-03-07 キヤノン株式会社 描画装置、及び、物品の製造方法
JP2015070213A (ja) * 2013-09-30 2015-04-13 キヤノン株式会社 描画装置、および物品の製造方法
KR102358009B1 (ko) 2015-11-10 2022-02-04 삼성전자주식회사 빔 투사 장치 및 빔 투사 장치를 이용하여 빔을 투사하는 방법
JP6804389B2 (ja) * 2017-05-30 2020-12-23 株式会社ニューフレアテクノロジー 描画装置および描画方法
JP6854215B2 (ja) * 2017-08-02 2021-04-07 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4220209B2 (ja) * 2002-09-27 2009-02-04 株式会社アドバンテスト 電子ビーム露光装置、偏向装置、及び電子ビーム露光方法
KR101077098B1 (ko) * 2002-10-30 2011-10-26 마퍼 리쏘그라피 아이피 비.브이. 전자 빔 노출 시스템
GB2414111B (en) 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
US7816655B1 (en) 2004-05-21 2010-10-19 Kla-Tencor Technologies Corporation Reflective electron patterning device and method of using same
JP2007019243A (ja) * 2005-07-07 2007-01-25 Canon Inc 電子ビーム装置及びデバイス製造方法
NL2003304C2 (en) * 2008-08-07 2010-09-14 Ims Nanofabrication Ag Compensation of dose inhomogeneity and image distortion.
US8253923B1 (en) * 2008-09-23 2012-08-28 Pinebrook Imaging Technology, Ltd. Optical imaging writer system
TW201239943A (en) * 2011-03-25 2012-10-01 Canon Kk Drawing apparatus and method of manufacturing article
JP5832141B2 (ja) * 2011-05-16 2015-12-16 キヤノン株式会社 描画装置、および、物品の製造方法
JP2013016744A (ja) * 2011-07-06 2013-01-24 Canon Inc 描画装置及びデバイスの製造方法
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法
JP2013074088A (ja) * 2011-09-28 2013-04-22 Canon Inc 荷電粒子線描画装置、描画データ生成方法、描画データ生成プログラム、それを用いた物品の製造方法

Also Published As

Publication number Publication date
TWI552196B (zh) 2016-10-01
US9040935B2 (en) 2015-05-26
TW201503231A (zh) 2015-01-16
KR101833094B1 (ko) 2018-02-27
US20150001417A1 (en) 2015-01-01
CN104253025A (zh) 2014-12-31
CN104253025B (zh) 2017-07-07
JP2015012036A (ja) 2015-01-19
KR20150001631A (ko) 2015-01-06

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